Survival kit:

Publications

Books

2007

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Polarization Effects in Semiconductors: From Ab-Initio Theory to Device Applications

Springer, Dec 2007, ISBN 0387368310, edited by Colin Wood and Debdeep Jena. (Available from Amazon).

Journal Papers:

We have published our research work in: Science, Nature Comm., Physical Review Letters, IEEE Electron Device Letters, Applied Physics Letters, Nano Letters, IEEE IEDM Tech. Digest, and IEEE DRC Tech digest, among others.

Get the preprints of selected papers from the arXivs.

2013

125) Tunneling Transistors based on Graphene and 2D Crystals

(D. Jena,

Proceedings of the IEEE, to appear, 2013)

124) Graphene reconfigurable THz optoelectronics

(B. Sensale-Rodriguez, et al.,

Proceedings of the IEEE, to appear, 2013)

123) Interband tunneling in 2D crystal semiconductors

(N. Ma and D. Jena,

Appl. Phys. Lett., to appear, 2013)

122) Role of metal contacts in designing high-performance n-type WSe₂ FETs

(W. Liu, et al.,

Nano Lett., to appear, 2013)

121) Ultrascaled InAlN/GaN HEMTs with f_T of 400 GHz

(Y. Yue, et al.,

Jpn. J. Appl. Phys, to appear, 2013)

120) Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

(R. Yan et al.,

Appl. Phys. Lett., 102, 123106 2013)

119) Electrical noise and transport properties of graphene

(N. Sun, et al.,

J. Low. Temp. Phys, Feb 2013)

118) Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

(H. Shi, et al.,

ACS Nano, 7, 1072, 2013)

117) Power amplification at THz via plasma wave excitation in RTD-gated HEMTs

(B. Sensale-Rodriguez, et al.,

IEEE Trans. THz. Sci. Tech., 3, 200, 2013)

116) InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax or 260/220 GHz

(R. Wang, et al.,

Appl. Phys. Express, 6, 016503, 2013)

115) SymFET: A proposed symmetric graphene tunneling field-effect transistor

(P. Zhao et al.,

IEEE Trans. Electron Dev., 60, 951, 2013)

114) Comparative study of chemically synthesized and exfoliated multilayer MoS₂ field-effect transistors

(Wan-Sik Hwang et al.,

Appl. Phys. Lett., 102, 043116, 2013)

113) Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz

(R. Wang et al.,

IEEE Electron Dev. Lett., 34, 378 2013)

112) Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes

(J. Verma et al.,

Appl. Phys. Lett., 101, 032109 2013)

111) Terahertz imaging employing graphene modulator arrays

(B. Sensale-Rodriguez, et al.,

Opt. Exp., 21, 2324, 2013)

110) Time-delay analysis in high-speed gate-recessed E-Mode InAlN HEMTs

(B. Sensale-Rodriguez, et al.,

Solid State Electron., 80, 67, 2013)

2012

109) High-Mobility, Low-Power Thin-Film Transistors based on multilayer MoS₂ crystals

(S. Kim et al.,

Nature Comm., 3, 1011, 2012)

108) Broadband Graphene Terahertz Modulators enabled by Intraband Transitions

(B. Sensale-Rodriguez, R. Yan, M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. Xing,

Nature Comm., 3, 780, 2012)

107) Polarization effects on gate leakage in InAlN/AlN/GaN HEMTs

(S. Ganguly et al.,

Appl. Phys. Lett., 101, 253519 2012)

106) Efficeint THz electro-absorption modulation employing graphene plasmonic structures

(B. Sensale-Rodriguez et al.,

Appl. Phys. Lett., 101, 261115 2012)

105) High aspect ratio features in poly(methylglutarimide) using EBL and solvent developers

(G. Karbasian et al.,

J. Vac. Sc. Tech. B, 30, 06FI01 2012)

104) High-Detectivity Multilayer MoS₂ Phototransistors with Spectral Response from UV to IR

(W. Choi et al.,

Adv. Mat., 24, 5832 2012)

103) Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements

(C. Pietzka, G. Li, M. Alomari, H. Xing, D. Jena, and E. Kohn,

J. Appl. Phys., 112, 074508, 2012)

102) Extraordinary control of THz beam reflectance in Graphene electro-absorption modulators

(B. Sensale-Rodriguez et al.,

Nano Lett., 12, 4518, 2012)

101) Determination of graphene work function and grapehen-insulator-semiconductor band alignment by internal photoemission spectroscopy

(R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. Richter, A. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. Xing, D. Gundalch, and N. Nguyen

Appl. Phys. Lett., 101, 022105 2012)

100) Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

(F. Faria, J. Guo, P. Zhao, G. Li, P. Kandaswamy, M. Wistey, H. Xing, and D. Jena,

Appl. Phys. Lett., 101, 032109 2012)

99) Transistors with chemically synthesized layered semiconductor WS₂ exhibiting 10⁵ room temperature modulation and ambipolar behavior

(W.-S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. Xing, A. Seabaugh, and D. Jena,

Appl. Phys. Lett., 101, 013107 2012)

98) Enhanced THz detection in Resonant Tunnel Diode-Gated HEMTs

(B. Sensale-Rodriguez et al.,

ECS Trans., 49, 93, 2012)

97) Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

(W.-S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena,

Appl. Phys. Lett., 100, 203107, 2012)

96) InAlN/AlN/GaN HEMTs with MBE-regrown contacts and f_T=370 GHz

(Y. Zhang, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, X. Gao, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. Xing,

IEEE Electron Device Lett., accepted, to appear, 2012)

95) InGaN Channel High Electron Mobility Transistor Structures Grown by Metal Organic Chemical Vapor Deposition

(O. Laboutin, Y. Cao, W. Johnson, R. Wang, G. Li, D. Jena, and H. Xing,

Appl. Phys. Lett., 100, 121909, 2012)

94) Effect of Optical Phonon Scattering on the Performance of GaN Transistors

(T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena,

IEEE Electron Device Lett., 33, 709, 2012)

93) Ultra thin GaN-on-Insulator Quantum Well FETs with Regrown MBE Contacts

(G. Li, R. Wang, J. Guo, J. Verma, Z. Hu, Y. Yue, F. Faria, Y. Cao, M. Kelly, T. Kosel, H. Xing, and D. Jena,

IEEE Electron Device Lett., 33, 661, 2012)

92) MBE regrown ohmics in In_0.17AlN HEMTs with regrowth interface resistance of 0.05 ohm-mm

(J. Guo, G. Li, F. Faria, Y. Cao, R. Wang, J. Verma, X. Gao, S. Guo, E. Beam, A. Ketterson, M. Schuette, P. Saunier, M Wistey, D. Jena, and H. Xing,

IEEE Electron Device Lett., 33, 525, 2012)

91) Fabrication of Top-Gated Epitaxial Graphene Nano-Ribbon FETs using Hydrogen-silsesquioxane (HSQ)

(W.-S. Hwang, K. Tahy, L. Nyakiti, V. Wheeler, R. Myers-Ward, C. Eddy, D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena,

J. Vac. Sci. Tech (B), 30(3), 03D14, 2012)

90) Graphene

(D. Jena,

Springer Encyclopedia (review article), accepted, to appear, 2012)

89) Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

(R. Feenstra, D. Jena, and G. Gu

J. Appl. Phys., 111, 043711, 2012)

88) Charge transport in non-polar and semi-polar III-V nitride heterostructures

(A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

Semicond. Sci. Technol., 27, 024018, 2012)

87) Metal-Face InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy

(J. Guo, Y. Cao, C. Lian, T. Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing

Phys. Stat. Solidi.(a), 208, 1617 2011)

86) In-situ X-Ray photoelectron spectroscopy of trimethly aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(P. Sivasubramani et al.,

Phys. Stat. Solidi.(RRL), 6(1), 22 2012)

2011

85) FET THz detectors operating in the quantum capacitance limited region

(B. Sensale-Rodriguez, L. Liu, R. Wang, D. Jena, and H. Xing,

Int. Journal of High Speed Electronics and Systems, 20(3), 597, 2011)

84) The resurgence of III-Nitride materials development: AlInN HEMTs and GaN-on-Si

(O. Laboutin et al.,

ECS Transactions, 41(8), 301, 2011)

83) Molecular Beam Epitaxial growth of Gallium Nitride Nanowires on Atomic-Layer Deposited Aluminum Oxide

(K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

J. Crystal Growth, 334, 113, 2011)

82) Presence and origin of interface charges at atomic-layer deposited Al₂O₃/III-nitride heterojunctions

(S. Ganguly, J. Verma, G. Li, T. Zimmermann, H. Xing, and D. Jena,

Appl. Phys. Lett., 99, 193504, 2011)

81) N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping

(J. Verma, J. Simon, V. Protasenko, T. Kosel, H. Xing, and D. Jena,

Appl. Phys. Lett., 99, 171104, 2011)

80) High-field transport in two-dimensional graphene

(T. Fang, A. Konar, H. Xing, and D. Jena,

Phys. Rev. B, 84, 125450, 2011)

79) Unique prospects of graphene-based THz modulators

(S. Sensale-Rodriguez, T. Fang, R. Yan, M. Kelly, D. Jena, L. Liu, and H. Xing,

Appl. Phys. Lett., 99, 113104, 2011)

78) Si-containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

(R. Wang, et al.,

Appl. Phys. Express, 4, 096502, 2011)

77) Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

(A. Konar, T. Fang, and D. Jena,

Phys. Rev. B, 84, 085422, 2011)

76) Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy

(B. Gao, G. Hartland, T. Fang, M. Kelly, D. Jena, H. Xing, and L. Huang,

Nano Lett., 11 3184, 2011)

75) Thermally-limited current carrying ability of graphene nanoribbons

(A. Liao, J. Wu, X. Wang, K. Tahy, D. Jena, H. Dai, and E. Pop,

Phys. Rev. Lett., 106, 256801 2011)

74) Stark-Effect Scattering in Rough Quantum Wells

(R. Jana, and D. Jena

Appl. Phys. Lett., 99, 012104 2011)

73) 220 GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

(R. Wang, G. Li, J. Verma, B. Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

IEEE Electron Device Lett., 32(9), 1215 2011)

72) Influence of Metal-Graphene Contacts on the Operation and Scalability of Graphene Field-Effect Transistors

(P. Zhao, Q. Zhang, D. Jena, and S. Koswatta,

IEEE Trans. Electron Devices, 58(9), 3170 2011)

71) 210 GHz InAlN HEMTs with dielectric-free passivation

(R. Wang, G. Li, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

IEEE Electron Device Lett., 32(7), 892 2011)

70) Subcritical Barrier AlN/GaN E/D-Mode HFETs and Inverters

(T. Zimmermann et al.,

Phys. Stat. Solidi.(a), 208, 1620 2011)

69) Metal-Face InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy

(J. Guo, Y. Cao, C. Lian, T. Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing

Phys. Stat. Solidi.(a), 208, 1617 2011)

68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

(D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

Phys. Stat. Solidi.(a), 208, 1511 2011)

67) MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(Y. Cao, K. Wang, G. Li, T. Kosel, H. Xing, and D. Jena

J. Cryst. Growth, 323, 529 2011)

66) Green luminescence of InGaN nanowires grown on Silicon substrates by MBE

(K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

J. Appl. Phy., 109, 084336 2011)

65) Enhancement-Mode InAlN/AlN/GaN HEMTs with 10^-12A/mm leakage current and 10¹² on/off current ratio

(R. Wang, P. Saunier, Y. Tang, T. Fang, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

IEEE Electron Device Lett., 32 (3), 309 2011)

64) Charged basal stacking fault scattering in nitride semiconductors

(A. Konar, T. Fang, N. Sun, and D. Jena

Appl. Phys. Lett., 98, 022109 2011)

2010

63) High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

(G. Li, Y. Cao, H. Xing, and D. Jena

Appl. Phys. Lett., 97, 222110 2010)

62) Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

(Y. Cao, H. Xing, and D. Jena

Appl. Phys. Lett., 97, 222116 2010)

61) Anisotropic charge transport in nonpolar GaN quantum wells: Polarization-induced line charge and interface roughness scattering

(A. Konar, T. Fang, N. Sun, and D. Jena

Phys. Rev. B, 82, 193301 2010)

60) Gate-recessed Enhancement-Mode InAlN/AlN/GaN HEMTs with 1.9 A/mm Drain Current Density and 800 mS/mm Transconductance

(R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

IEEE Electron Device Lett., 31(12), 1383 2010)

59) Effect of high-K dielectrics on charge transport in graphene-based field-effect transistors

(A. Konar, T. Fang, & D. Jena

Phys. Rev. B, 82, 115452, 2010)

58) Threshold Voltage Control in Al_0.72Ga_0.28N/AlN/GaN HEMTs by Work-Function Engineering

(G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena,

IEEE Electron Device Lett., 31 (9), 954 2010)

57) Short-period AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions

(J. Simon, H. Xing, and D. Jena,

Phys. Stat. Solidi (C), 7 (10), 2386 2010)

56) Temperature-dependence of hydrodynamic instabilities in 1-dimensional electron flow in semiconductors

(W. R. C-Munoz, D. Jena, & M. Sen

J. Appl. Phys., 107, 074504 2010)

55) Quantum Transport in Graphene Nanoribbons patterned by Metal Masks

(C. Lian, K. Tahy, T. Fang, G. Li, H. Xing, and D. Jena

Appl. Phys. Lett., 96, 101309, 2010)

54) Polarization-engineered removal of buffer leakage for GaN Transistors

(Y. Cao, T. Zimmermann, H. Xing & D. Jena

Appl. Phys. Lett., 96, 042102 2010)

53) Polarization Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures

(J. Simon, V. Protasenko, C. Lian, H. Xing & D. Jena

Science, 327, 60, 2010) Press: MIT Tech Review

2009

52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

(J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

Phys. Rev. Lett., 103, 026801, 2009)

51) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

(W. R. C-Munoz, D. Jena, & M. Sen

J. Appl. Phys., 106, 014506, 2009)

50) Investigations of hot electrons and hot phonons generated in an AlN/GaN High-Electron Mobility Transistor

(G. Xu, S. K. Tripathy, X. Mu, Y. J. Ding, K. Wang, Y. Cao, D. Jena, & J. B. Khurgin

Laser Physics, 19, 745, 2009)

49) 4 nm AlN Barrier all-binary HFETs with SiN_x Gate Dielectric

(T. Zimermann, Y. Cao, D. Jena, P. Saunier, H. Xing

Int. J. Jigh Speed Electronics & Systems., 19, 153, 2009)

48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors

(D. Jena

J. Appl. Phys., 105, 123701, 2009)

47) Heat Transport Mechanisms in Superlattices

(Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

Adv. Funct. Materials, 19, 610, 2009)

2008

46) Graphene Nanoribbon Tunnel Transistors

(Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

IEEE Electron Device Lett., 29 (12), 1344, 2008)

45) Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

(T. Fang, A. Konar, H. Xing, & D. Jena

Phys. Rev. B, 78, 205403, 2008)

44) GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

(K. Goodman, K. Wang, X. Luo, J. Simon, T. Kosel, & D. Jena

Mater. Res. Soc. Symp. Proc. Vol. 1080, 1080-O08-04, 2008)

43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

(D. Jena, T. Fang, Q. Zhang, & H. Xing

Appl. Phys. Lett., 93, 112106, 2008)

42) Stokes and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures

(G. Xu, S. Tripathy, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena & J. Khurgin

Appl. Phys. Lett., 93, 051912, 2008)

41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors

(J. Khurgin, D. Jena & Y. Ding

Appl. Phys. Lett., 93, 032110, 2008)

40) AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance

(T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, & H. Xing

IEEE Electron Device Lett., 29 (7) 661, 2008)

39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

(J. Simon & D. Jena

Phys. Stat. Sol. A, 205 1074 2008)

38) Structural and transport properties of InN grown on GaN by MBE

(K. Wang, T. Kosel & D. Jena

Phys. Stat. Sol. C, 5 1811, 2008)

37) 2.3 nm barrier AlN/GaN HEMTs with insulated gates

(D. Deen, T. Zimmermann, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2047, 2008)

36) Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

(Y. Cao, K. Wang & D. Jena

Phys. Stat. Sol. C, 5 1873, 2008)

35) Formation of Ohmic contacts to ultrathin AlN/GaN HEMTs

(T. Zimmermann, D. Deen, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2030, 2008)

34) Very Low Sheet Resistance and Shubnikov de-Haas Oscillations in Two-Dimensional Electron Gases at Ultrathin Binary AlN/GaN Heterojunctions

(Y. Cao, K. Wang, A. Orlov, H. Xing & D. Jena

Appl. Phys. Lett., 92, 152112, 2008)

33) Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks

(Y. Lu, V. Protasenko, D. Jena, H. Xing, & M. Kuno

Nano. Lett., 8, 1352, 2008)

32) Evidence of hot electrons generated from an AlN/GaN HEMT

(S. Tripathy, G. Xu, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena, & J. Khurgin

Appl. Phys. Lett., 92, 013513, 2008)

2007

31) Hot phonon effect on electron velocity saturation in GaN: A second look

(J. Khurgin, Y. Ding, & D. Jena

Appl. Phys. Lett., 91, 252104, 2007)

30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

(A. Konar & D. Jena

J. Appl. Phys., 102, 123705, 2007)

29) Conduction band offset at the InN/GaN heterojunction

(K. Wang, C. Lian, N. Su, D. Jena, & J. Timler

Appl. Phys. Lett., 91, 232117, 2007)

28) MBE-grown Ultra-Shallow AlN/GaN HFET Technology

(H. Xing, D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D. Jena

ECS Transactions, 11, 233, 2007)

27) Polarization-sensitive photodetectors based on solution-synthesized semiconductor nanowire-based quantum-wire solids

(A. Singh, X. Li, G. Galantai, V. Protasenko, M. Kuno, H. Xing, & D. Jena

Nano Lett., 7 (10), 2999, 2007)

26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

(T. Fang, A. Konar, H. Xing & D. Jena

Appl. Phys. Lett., 91, 092109, 2007)

25) Hydrodynamic instability of one-dimensional electron flow in semiconductors

(W. R. C-Munoz, M. Sen & D. Jena

J. Appl. Phys., 102, 023703, 2007)

24) A High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN Heterojunctions

(Y. Cao & D. Jena

Appl. Phys. Lett., 90, 182112, 2007)

23) Resonant Terahertz generation from InN thin films

(X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova

Opt. Lett., 32, 1432, 2007)

22) Polarization anisotropy, frequency dependent emission, and transport properties of dielectrophoretically aligned CdSe nanowire arrays

(R. Zhou, H.-C. Chang, V. Protasenko, M. Kuno, A. Singh, D. Jena, & H. Xing

J. Appl. Phys., 101, 073704, 2007)

21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

(D. Jena & A. Konar

Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

2006

20) Compositional modulation and optical emission in AlGaN epitaxial films

(M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson

J. Appl. Phys., 100, 103512, 2006)

19) Hot Phonons in Si-Doped GaN

(J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, & D. Jena,

Appl. Phys. Lett., 89, 202117, 2006)

18) Effect of dislocation scattering on the transport properties of InN grown on GaN substrate by Molecular Beam Epitaxy

(K. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D. Hall, T. Kosel, & D. Jena,

Appl. Phys. Lett., 89, 162110, 2006)

17) Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect

(K. Wang, J. Simon, N. Goel & D. Jena,

Appl. Phys. Lett., 88, 022103, 2006)

16) Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering

(J. Simon, K. Wang, H. Xing, D. Jena & S. Rajan,

Appl. Phys. Lett., 88, 042109, 2006)

15) Electron mobility in graded AlGaN alloys

(S. Rajan, S. DenBaars, U. Mishra, H. Xing. & D. Jena,

Appl. Phys. Lett., 88, 042103, 2006)

14) Ultrathin CdSe Nanowire FETs and their Optical Properties

(A. Khandelwal, D. Jena, J. Grebinski, K. Richter, and M. Kuno,

J. Electron. Mat., 35, 170, 2006)

2004

13) Spin scattering by dislocations in III-V Semiconductors

(D. Jena,

Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]

12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

11) AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

(Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, and D. Jena,

Appl. Phys. Lett., 84, 1591, 2004)

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

10) Magnetotransport properties of a polarization-doped three-dimensional electron slab

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Rev. B 67 153306, 2003)

9) Explanation of anomalously high b in GaN-based bipolar transistors

(H. Xing, D. Jena, M. J. W. Rodwell, and U. K. Mishra,

IEEE Elect. Dev. Lett. 24 4, 2003)

8) Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Stat. Sol. C, 0 2339, 2003)

2002

7) Quantum and classical scattering times due to charged dislocations in an impure electron gas

(D. Jena and U. K. Mishra,

Phys. Rev. B 66 241307, 2002)

6) Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,

Appl. Phys. Lett., 81 4395, 2002)

5) Effect of p-doped overlayer thickness on RF-dispersion in GaN JFETs

(A.Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U.K. Mishra,

IEEE Elec. Device Letters, 23 306, 2002

4) Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs

(D. Jena and U. K. Mishra,

Appl. Phys. Lett., 80 64, 2002 )

2001

3) Electron transport in III-V nitride 2DEGs

(D. Jena, I. Smorchkova, A. Gossard, U. K. Mishra,

Phys. Stat. Sol. B, 228 617, 2001)

2000

2) Dipole scattering in polarization induced two-dimensional electron gases

(D. Jena, A. C. Gossard, U. K. Mishra,

J. Appl. Phys., 88 4734, 2000)

1) Dislocation scattering in a two-dimensional electron gas

(D. Jena, A. C. Gossard, U. K. Mishra,

Appl. Phys. Lett., 76 1707, 2000)

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