Publications

Research

Conferences

InsideND

WebMail

Home

 

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: science_cover.gif    Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: prl  Description: Description: Description: Description: Description: Description: Description: Description: Description: apl  Description: Description: Description: Description: Description: Description: Description: Description: Description: jap  Description: Description: Description: Description: Description: Description: Description: Description: Description: edl  Description: Description: Description: Description: Description: Description: Description: Description: Description: prb  Description: Description: Description: Description: Description: Description: Description: Description: Description: pss  Description: Description: Description: Description: Description: Description: Description: Description: Description: nanolett

Publications

 

Books

 

2007

Description: Description: Description: Description: Description: Description: Description: Description: Description: book_pic

Polarization Effects in Semiconductors: From Ab-Initio Theory to Device Applications

Springer, Dec 2007, ISBN 0387368310, edited by Colin Wood and Debdeep Jena. (Available from Amazon).

 

 

Journal Papers:

 

We have published our research work in: Science, Nature Comm., Physical Review Letters, IEEE Electron Device Letters, Applied Physics Letters, Nano Letters, IEEE IEDM Tech. Digest, and IEEE DRC Tech digest, among others.

 

Get the preprints of selected papers from the arXivs.

 

2014

 

      153) Intimate Contacts (News & Views)

            (D. Jena, K. Banerjee, H. Xing

            Nature Materials, to appear, 2014)

      152) Exfoliated MoTe2 Field-Effect Transistors

            (S. Fathipour et al,

            Appl. Phys. Lett., 105, 192101, 2014)

      151) Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation

            (A. Verma, S. Raghavan, S. Stemmer, and D. Jena,

            Appl. Phys. Lett., 105, 113512, 2014)

      150) Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride

            (A. Ritchie et al.,

            Appl. Surf. Sci., 316, 232, 2014)

      149) Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing

            (Y. Yue, X. Yan, W. Li, H. G. Xing, D. Jena, and P .Fay,

            J. Vac. Sci. Tech. B, 32, 061201, 2014)

      148) High-performance photocurrent generation from 2D WS2 FETs

            (S. H. Lee, D. Lee, W.-S. Hwang, E. Hwang, D. Jena, and W. J. Yoo,

            Appl. Phys. Lett., 104, 193113, 2014)

      147) First-principles study of high-field related electronic behavior of group-III nitrides

            (Q. Yan, E. Kioupakis, D. Jena, C. van de Walle,

            Phys. Rev. B, 90, 121201(R), 2014)

      146) Plasma-MBE growth conditions of AlGaN/GaN HEMTs on Silicon and their device characteristics with epitaxially regrown ohmic contacts

            (S. Ganguly, J. Verma, H. G. Xing, and D. Jena,

            Appl. Phys. Exp, 7, 105501, 2014)

      145) Optimum band gap and supply voltage in tunnel FETs

            (Q. Zhang et al.,

            IEEE Trans. Electron Dev., 61, 2719, 2014)

      144) Intrinsic Mobility Limiting Mechanisms in Strontium Titanate

            (A. Verma, A. Kadjos, T. Cain, S. Stemmer, and D. Jena,

            Phys. Rev. Lett., 112, 216601, 2014)

      143) Charge Scattering and Mobility in Atomically Thin Semiconductors

            (N. Ma and D. Jena,

            Phys. Rev. X, 4, 011043 2014)

      142) High-Voltage Field-Effect Transistors with Wide-Bandgap Ga2O3 Nanomembranes

            (Wan Sik Hwang et al.,

            Appl. Phys. Lett., 104, 203111, 2014)

      141) A Computational Study of Metal-Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

            (J. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee,

            Phys. Rev. X, 4, 031005, 2014)

      140) GaN Heterostructure Barrier Diodes (HBD) exploiting Polarization-induced Delta-doping

            (P. Zhao et al.,

            IEEE Electron Dev. Lett., 35, 615, 2014)

      139) Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructures FETs on AlN

            (G. Li et al.,

            Appl. Phys. Lett. 104, 193506, 2014)

      138) Two-dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells

            (Cheng-Ying Huang, J. Law, H. Lu, D. Jena, M. J. W. Rodwell, and A. C. Gossard,

            J. Appl. Phys. 115, 123711 2014)

      137) Single particle transport in two-dimensional heterojunction interlayer tunneling field-effect transistor (THIN-TFET)

            (M. Li et al.,

            J. Appl. Phys. 115, 074508 2014)

      136) Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

            (Z. Hu et al.,

            Appl. Phys. Exp, 7, 031002 2014)

      135) Tunnel-Injection Quantum Dot deep-UV LEDs with Polarization-Induced Doping in III-Nitride Heterostructures

            (J. Verma et al.,

            Appl. Phys. Lett., 104, 021105 2014)

      134) AlGaN/GaN HEMTs on Silicon by MBE with regrown contacts and fT=153 GHz

            (S. Ganguly et al.,

            Phys. Stat. Sol. (c), 11, 887, 2014)

      133) Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

            (S. Ganguly et al.,

            Appl. Phys. Exp, 7, 034102 2014)

      132) Effect of Fringing Capacitances on the RF Performance of GaN HEMTs with T-Gates

            (B. Song et al.,

            IEEE Trans. Electron Devices, 61, 747, 2014)

      131) Electronic transport properties of top-gated epitaxial graphene nanoribbon field-effect transistors on SiC wafers

            (Wan Sik Hwang et al.,

            J. Vac. Sci. Technol (b), 32, 012202 2014)

 

2013

 

      130) On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

            (R. Jana et al.,

            Phys. Stat. Sol. (c), 10, 1469 2013)

      129) Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

            (J. A. Ferrer-Perez et al.,

            J. Electronic Materials, Nov 2013)

      128) Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

            (G. Li et al.,

            IEEE Electron Dev. Lett., 34, 852, 2013)

      127) High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

            (H-Y. Chang, et al.,

            ACS Nano, 7, 5446, 2013)

      126) Tunneling Transistors based on Graphene and 2D Crystals

            (D. Jena,

            Proceedings of the IEEE, 101, 1585, 2013)

      125) Graphene reconfigurable THz optoelectronics

            (B. Sensale-Rodriguez, et al.,

            Proceedings of the IEEE, 101, 1705, 2013)

      124) Interband tunneling in 2D crystal semiconductors

            (N. Ma and D. Jena,

            Appl. Phys. Lett., 102, 132102, 2013)

      123) Role of metal contacts in designing high-performance n-type WSe2 FETs

            (W. Liu, et al.,

            Nano Lett., 13, 1983, 2013)

      122) Ultrascaled InAlN/GaN HEMTs with fT of 400 GHz

            (Y. Yue, et al.,

            Jpn. J. Appl. Phys, 52, 08JN14, 2013)

      121) Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

            (R. Yan et al.,

            Appl. Phys. Lett., 102, 123106 2013)

      120) Electrical noise and transport properties of graphene

            (N. Sun, et al.,

            J. Low. Temp. Phys, 172, 202 2013)

      119) Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals

            (H. Shi, et al.,

            ACS Nano, 7, 1072, 2013)

      118) Power amplification at THz via plasma wave excitation in RTD-gated HEMTs

            (B. Sensale-Rodriguez, et al.,

            IEEE Trans. THz. Sci. Tech., 3, 200, 2013)

      117) InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax or 260/220 GHz

            (R. Wang, et al.,

            Appl. Phys. Express, 6, 016503, 2013)

      116) SymFET: A proposed symmetric graphene tunneling field-effect transistor

            (P. Zhao et al.,

            IEEE Trans. Electron Dev., 60, 951, 2013)

      115) Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

            (Wan-Sik Hwang et al.,

            Appl. Phys. Lett., 102, 043116, 2013)

      114) Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz

            (R. Wang et al.,

            IEEE Electron Dev. Lett., 34, 378 2013)

      113) Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes

            (J. Verma et al.,

            Appl. Phys. Lett., 101, 032109 2013)

      112) Terahertz imaging employing graphene modulator arrays

            (B. Sensale-Rodriguez, et al.,

            Opt. Exp., 21, 2324, 2013)

      111) Time-delay analysis in high-speed gate-recessed E-Mode InAlN HEMTs

            (B. Sensale-Rodriguez, et al.,

            Solid State Electron., 80, 67, 2013)

2012

      110) High-Mobility, Low-Power Thin-Film Transistors based on multilayer MoS2 crystals

            (S. Kim et al.,

            Nature Comm., 3, 1011, 2012)

      109) Broadband Graphene Terahertz Modulators enabled by Intraband Transitions

            (B. Sensale-Rodriguez, R. Yan, M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. Xing,

            Nature Comm., 3, 780, 2012)

      108) Polarization effects on gate leakage in InAlN/AlN/GaN HEMTs

            (S. Ganguly et al.,

            Appl. Phys. Lett., 101, 253519 2012)

      107) Efficient THz electro-absorption modulation employing graphene plasmonic structures

            (B. Sensale-Rodriguez et al.,

            Appl. Phys. Lett., 101, 261115 2012)

      106) Graphene nanoribbon FETs for digital electronics: experiment and modeling

            (K. Tahy et al.,

            Int. J. of Circuit Theory, 41, 603, 2012)

      105) High aspect ratio features in poly(methylglutarimide) using EBL and solvent developers

            (G. Karbasian et al.,

            J. Vac. Sc. Tech. B, 30, 06FI01 2012)

      104) High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from UV to IR 

            (W. Choi et al.,

            Adv. Mat., 24, 5832 2012)

      103) Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements

            (C. Pietzka, G. Li, M. Alomari, H. Xing, D. Jena, and E. Kohn,

            J. Appl. Phys., 112, 074508, 2012)

      102) Extraordinary control of THz beam reflectance in Graphene electro-absorption modulators

            (B. Sensale-Rodriguez et al.,

            Nano Lett., 12, 4518, 2012)

      101) Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

            (R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. Richter, A. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. Xing, D. Gundalch, and N. Nguyen

            Appl. Phys. Lett., 101, 022105 2012)

      100) Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

            (F. Faria, J. Guo, P. Zhao, G. Li, P. Kandaswamy, M. Wistey, H. Xing, and D. Jena,

            Appl. Phys. Lett., 101, 032109 2012)

      99) Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

            (W.-S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. Xing, A. Seabaugh, and D. Jena,

            Appl. Phys. Lett., 101, 013107 2012)

      98) Enhanced THz detection in Resonant Tunnel Diode-Gated HEMTs

            (B. Sensale-Rodriguez et al.,

            ECS Trans., 49, 93, 2012)

      97) Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

            (W.-S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena,

            Appl. Phys. Lett., 100, 203107, 2012)

      96) InAlN/AlN/GaN HEMTs with MBE-regrown contacts and fT=370 GHz

            (Y. Zhang, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, X. Gao, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. Xing,

            IEEE Electron Device Lett., accepted, to appear, 2012)

      95) InGaN Channel High Electron Mobility Transistor Structures Grown by Metal Organic Chemical Vapor Deposition

            (O. Laboutin, Y. Cao, W. Johnson, R. Wang, G. Li, D. Jena, and H. Xing,

            Appl. Phys. Lett., 100, 121909, 2012)

      94) Effect of Optical Phonon Scattering on the Performance of GaN Transistors

            (T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena,

            IEEE Electron Device Lett., 33, 709, 2012)

      93) Ultra thin GaN-on-Insulator Quantum Well FETs with Regrown MBE Contacts  

(G. Li, R. Wang, J. Guo, J. Verma, Z. Hu, Y. Yue, F. Faria, Y. Cao, M. Kelly, T. Kosel, H. Xing, and D. Jena,

            IEEE Electron Device Lett., 33, 661, 2012)

      92) MBE regrown ohmics in In0.17AlN HEMTs with regrowth interface resistance of 0.05 ohm-mm

            (J. Guo, G. Li, F. Faria, Y. Cao, R. Wang, J. Verma, X. Gao, S. Guo, E. Beam, A. Ketterson, M. Schuette, P. Saunier, M Wistey, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 33, 525, 2012)

      91) Fabrication of Top-Gated Epitaxial Graphene Nano-Ribbon FETs using Hydrogen-silsesquioxane (HSQ)

            (W.-S. Hwang, K. Tahy, L. Nyakiti, V. Wheeler, R. Myers-Ward, C. Eddy, D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena,

            J. Vac. Sci. Tech (B), 30(3), 03D14, 2012)

      90) Graphene

            (D. Jena,

            Springer Encyclopedia (review article), accepted, to appear, 2012)

      89) Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

            (R. Feenstra, D. Jena, and G. Gu

            J. Appl. Phys., 111, 043711, 2012)

      88) Charge transport in non-polar and semi-polar III-V nitride heterostructures

            (A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

            Semicond. Sci. Technol., 27, 024018, 2012)

      87) Metal-Face InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy

            (J. Guo, Y. Cao, C. Lian, T. Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing

            Phys. Stat. Solidi.(a), 208, 1617 2011)

      86) In-situ X-Ray photoelectron spectroscopy of trimethly aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates       

(P. Sivasubramani et al.,

            Phys. Stat. Solidi.(RRL), 6(1), 22 2012)

2011

      85) FET THz detectors operating in the quantum capacitance limited region

            (B. Sensale-Rodriguez, L. Liu, R. Wang, D. Jena, and H. Xing,

            Int. Journal of High Speed Electronics and Systems, 20(3), 597, 2011)

      84) The resurgence of III-Nitride materials development: AlInN HEMTs and GaN-on-Si

            (O. Laboutin et al.,

            ECS Transactions, 41(8), 301, 2011)

      83) Molecular Beam Epitaxial growth of Gallium Nitride Nanowires on Atomic-Layer Deposited Aluminum Oxide

            (K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

            J. Crystal Growth, 334, 113, 2011)

      82) Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

            (S. Ganguly, J. Verma, G. Li, T. Zimmermann, H. Xing, and D. Jena,

            Appl. Phys. Lett., 99, 193504, 2011)

      81) N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping

            (J. Verma, J. Simon, V. Protasenko, T. Kosel, H. Xing, and D. Jena,

            Appl. Phys. Lett., 99, 171104, 2011)

      80) High-field transport in two-dimensional graphene

            (T. Fang, A. Konar, H. Xing, and D. Jena,

            Phys. Rev. B, 84, 125450, 2011)

      79) Unique prospects of graphene-based THz modulators

            (S. Sensale-Rodriguez, T. Fang, R. Yan, M. Kelly, D. Jena, L. Liu, and H. Xing,

            Appl. Phys. Lett., 99, 113104, 2011)

      78) Si-containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

            (R. Wang, et al.,

            Appl. Phys. Express, 4, 096502, 2011)

      77) Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

            (A. Konar, T. Fang, and D. Jena,

            Phys. Rev. B, 84, 085422, 2011)

      76) Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy

            (B. Gao, G. Hartland, T. Fang, M. Kelly, D. Jena, H. Xing, and L. Huang,

            Nano Lett., 11 3184, 2011)

      75) Thermally-limited current carrying ability of graphene nanoribbons

            (A. Liao, J. Wu, X. Wang, K. Tahy, D. Jena, H. Dai, and E. Pop,

            Phys. Rev. Lett., 106, 256801 2011)

      74) Stark-Effect Scattering in Rough Quantum Wells

            (R. Jana, and D. Jena

            Appl. Phys. Lett., 99, 012104 2011)

      73) 220 GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

            (R. Wang, G. Li, J. Verma, B. Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 32(9), 1215 2011)

      72) Influence of Metal-Graphene Contacts on the Operation and Scalability of Graphene Field-Effect Transistors

            (P. Zhao, Q. Zhang, D. Jena, and S. Koswatta,

            IEEE Trans. Electron Devices, 58(9), 3170 2011)

      71) 210 GHz InAlN HEMTs with dielectric-free passivation

            (R. Wang, G. Li, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 32(7), 892 2011)

      70) Subcritical Barrier AlN/GaN E/D-Mode HFETs and Inverters

            (T. Zimmermann et al.,

            Phys. Stat. Solidi.(a), 208, 1620 2011)

      69) Metal-Face InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy

            (J. Guo, Y. Cao, C. Lian, T. Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing

            Phys. Stat. Solidi.(a), 208, 1617 2011)

      68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

            (D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

            Phys. Stat. Solidi.(a), 208, 1511 2011)

      67) MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

            (Y. Cao, K. Wang, G. Li, T. Kosel, H. Xing, and D. Jena

            J. Cryst. Growth, 323, 529 2011)

      66) Green luminescence of InGaN nanowires grown on Silicon substrates by MBE

            (K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

            J. Appl. Phy., 109, 084336 2011)

      65) Enhancement-Mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 1012 on/off current ratio

            (R. Wang, P. Saunier, Y. Tang, T. Fang, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

            IEEE Electron Device Lett., 32 (3), 309 2011)

      64) Charged basal stacking fault scattering in nitride semiconductors

            (A. Konar, T. Fang, N. Sun, and D. Jena

            Appl. Phys. Lett., 98, 022109 2011)

2010

      63) High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

            (G. Li, Y. Cao, H. Xing, and D. Jena

            Appl. Phys. Lett., 97, 222110 2010)

      62) Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

            (Y. Cao, H. Xing, and D. Jena

            Appl. Phys. Lett., 97, 222116 2010)

      61) Anisotropic charge transport in nonpolar GaN quantum wells: Polarization-induced line charge and interface roughness scattering

            (A. Konar, T. Fang, N. Sun, and D. Jena

            Phys. Rev. B, 82, 193301 2010)

      60) Gate-recessed Enhancement-Mode InAlN/AlN/GaN HEMTs with 1.9 A/mm Drain Current Density and 800 mS/mm Transconductance

            (R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

            IEEE Electron Device Lett., 31(12), 1383 2010)

      59) Effect of high-K dielectrics on charge transport in graphene-based field-effect transistors

            (A. Konar, T. Fang, & D. Jena

            Phys. Rev. B, 82, 115452, 2010)

      58) Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering

            (G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena,

            IEEE Electron Device Lett., 31 (9), 954 2010)

      57) Short-period AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions

            (J. Simon, H. Xing, and D. Jena,

            Phys. Stat. Solidi (C), 7 (10), 2386 2010)

      56) Temperature-dependence of hydrodynamic instabilities in 1-dimensional electron flow in semiconductors

            (W. R. C-Munoz, D. Jena, & M. Sen

            J. Appl. Phys., 107, 074504 2010)

      55) Quantum Transport in Graphene Nanoribbons patterned by Metal Masks

            (C. Lian, K. Tahy, T. Fang, G. Li, H. Xing, and D. Jena

            Appl. Phys. Lett., 96, 101309, 2010)

      54) Polarization-engineered removal of buffer leakage for GaN Transistors

            (Y. Cao, T. Zimmermann, H. Xing & D. Jena

            Appl. Phys. Lett., 96, 042102 2010)

      53) Polarization Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures

            (J. Simon, V. Protasenko, C. Lian, H. Xing & D. Jena

            Science, 327, 60, 2010)  Press: MIT Tech Review

2009

      52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

            (J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

            Phys. Rev. Lett., 103, 026801, 2009)

      51) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

            (W. R. C-Munoz, D. Jena, & M. Sen

            J. Appl. Phys., 106, 014506, 2009)

      50) Investigations of hot electrons and hot phonons generated in an AlN/GaN High-Electron Mobility Transistor

            (G. Xu, S. K. Tripathy, X. Mu, Y. J. Ding, K. Wang, Y. Cao, D. Jena, &  J. B. Khurgin

            Laser Physics, 19, 745, 2009)

      49) 4 nm AlN Barrier all-binary HFETs with SiNx Gate Dielectric

            (T. Zimermann, Y. Cao, D. Jena, P. Saunier, H. Xing

            Int. J. Jigh Speed Electronics & Systems., 19, 153, 2009)

      48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors

            (D. Jena

            J. Appl. Phys., 105, 123701, 2009)

      47) Heat Transport Mechanisms in Superlattices

            (Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

            Adv. Funct. Materials, 19, 610, 2009)

2008

      46) Graphene Nanoribbon Tunnel Transistors

            (Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

            IEEE Electron Device Lett., 29 (12), 1344, 2008)

      45) Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

            (T. Fang, A. Konar, H. Xing, & D. Jena

            Phys. Rev. B, 78, 205403, 2008)

      44) GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

            (K. Goodman, K. Wang, X. Luo, J. Simon, T. Kosel, & D. Jena

            Mater. Res. Soc. Symp. Proc. Vol. 1080, 1080-O08-04, 2008)

      43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

            (D. Jena, T. Fang, Q. Zhang, & H. Xing

            Appl. Phys. Lett., 93, 112106, 2008)

      42) Stokes and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures

            (G. Xu, S. Tripathy, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena & J. Khurgin

            Appl. Phys. Lett., 93, 051912, 2008)

      41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors

            (J. Khurgin, D. Jena & Y. Ding

            Appl. Phys. Lett., 93, 032110, 2008)

      40) AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance

            (T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, & H. Xing

            IEEE Electron Device Lett., 29 (7) 661, 2008)

      39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

            (J. Simon & D. Jena

            Phys. Stat. Sol. A, 205 1074 2008)

      38) Structural and transport properties of InN grown on GaN by MBE

            (K. Wang, T. Kosel & D. Jena

            Phys. Stat. Sol. C, 5 1811, 2008)

      37) 2.3 nm barrier AlN/GaN HEMTs with insulated gates

            (D. Deen, T. Zimmermann, Y. Cao, D. Jena, & H. Xing

            Phys. Stat. Sol. C, 5 2047, 2008)

      36) Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

            (Y. Cao, K. Wang & D. Jena

Phys. Stat. Sol. C, 5 1873, 2008)

      35) Formation of Ohmic contacts to ultrathin AlN/GaN HEMTs

            (T. Zimmermann, D. Deen, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2030, 2008)

      34) Very Low Sheet Resistance and Shubnikov de-Haas Oscillations in Two-Dimensional Electron Gases at Ultrathin Binary AlN/GaN Heterojunctions

            (Y. Cao, K. Wang, A. Orlov, H. Xing & D. Jena

            Appl. Phys. Lett., 92, 152112, 2008)

      33) Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks

            (Y. Lu, V. Protasenko, D. Jena, H. Xing, & M. Kuno

            Nano. Lett., 8, 1352, 2008)

      32) Evidence of hot electrons generated from an AlN/GaN HEMT

            (S. Tripathy, G. Xu, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena, & J. Khurgin

            Appl. Phys. Lett., 92, 013513, 2008)

 

2007

      31) Hot phonon effect on electron velocity saturation in GaN: A second look

            (J. Khurgin, Y. Ding, & D. Jena

            Appl. Phys. Lett., 91, 252104, 2007)

      30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

            (A. Konar & D. Jena

            J. Appl. Phys., 102, 123705, 2007)

      29) Conduction band offset at the InN/GaN heterojunction

            (K. Wang, C. Lian, N. Su, D. Jena, & J. Timler

            Appl. Phys. Lett., 91, 232117, 2007)

      28) MBE-grown Ultra-Shallow AlN/GaN HFET Technology

            (H. Xing, D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D. Jena

            ECS Transactions, 11, 233, 2007)

      27) Polarization-sensitive photodetectors based on solution-synthesized semiconductor nanowire-based quantum-wire solids

            (A. Singh, X. Li, G. Galantai, V. Protasenko, M. Kuno, H. Xing, & D. Jena

            Nano Lett., 7 (10), 2999, 2007)

      26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

            (T. Fang, A. Konar, H. Xing & D. Jena

            Appl. Phys. Lett., 91, 092109, 2007)

      25) Hydrodynamic instability of one-dimensional electron flow in semiconductors

            (W. R. C-Munoz, M. Sen & D. Jena

            J. Appl. Phys., 102, 023703, 2007)

      24) A High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN Heterojunctions

            (Y. Cao & D. Jena

            Appl. Phys. Lett., 90, 182112, 2007)

      23) Resonant Terahertz generation from InN thin films

            (X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova

            Opt. Lett., 32, 1432, 2007)

      22) Polarization anisotropy, frequency dependent emission, and transport properties of dielectrophoretically aligned CdSe nanowire arrays

            (R. Zhou, H.-C. Chang, V. Protasenko, M. Kuno, A. Singh, D. Jena, & H. Xing

            J. Appl. Phys., 101, 073704, 2007)

      21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

            (D. Jena & A. Konar

            Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

 

2006

      20) Compositional modulation and optical emission in AlGaN epitaxial films

            (M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson

            J. Appl. Phys., 100, 103512, 2006)

      19) Hot Phonons in Si-Doped GaN

(J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, & D. Jena,

            Appl. Phys. Lett., 89, 202117, 2006)

      18) Effect of dislocation scattering on the transport properties of InN grown on GaN substrate by Molecular Beam Epitaxy

            (K. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D. Hall, T. Kosel, & D. Jena,

            Appl. Phys. Lett., 89, 162110, 2006)

      17) Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect

            (K. Wang, J. Simon, N. Goel & D. Jena,

            Appl. Phys. Lett., 88, 022103, 2006)

      16) Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering

            (J. Simon, K. Wang, H. Xing, D. Jena & S. Rajan,

            Appl. Phys. Lett., 88, 042109, 2006)

      15) Electron mobility in graded AlGaN alloys

            (S. Rajan, S. DenBaars, U. Mishra, H. Xing. & D. Jena,

            Appl. Phys. Lett., 88, 042103, 2006)

      14) Ultrathin CdSe Nanowire FETs and their Optical Properties

            (A. Khandelwal, D. Jena, J. Grebinski, K. Richter, and M. Kuno,

            J. Electron. Mat., 35, 170, 2006)

 

2004

      13) Spin scattering by dislocations in III-V Semiconductors

            (D. Jena,

            Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]

      12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

11) AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

(Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, and D. Jena,

Appl. Phys. Lett., 84, 1591, 2004)

 

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

 

2003

10) Magnetotransport properties of a polarization-doped three-dimensional electron slab

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Rev. B 67 153306, 2003)

9)   Explanation of anomalously high b in GaN-based bipolar transistors

(H. Xing, D. Jena, M. J. W. Rodwell, and U. K. Mishra,

IEEE Elect. Dev. Lett. 24 4, 2003)

8)   Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

 Phys. Stat. Sol. C, 0 2339, 2003)

 

2002

7)   Quantum and classical scattering times due to charged dislocations in an impure electron gas

(D. Jena and U. K. Mishra,

Phys. Rev. B 66 241307, 2002)

6)   Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,

Appl. Phys. Lett., 81 4395, 2002)

5)   Effect of p-doped overlayer thickness on RF-dispersion in GaN JFETs

(A.Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U.K. Mishra,

IEEE Elec. Device Letters, 23 306, 2002

4)   Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs  

(D. Jena and U. K. Mishra,

Appl. Phys. Lett., 80 64, 2002 )

 

2001

3)   Electron transport in III-V nitride 2DEGs

(D. Jena, I. Smorchkova, A. Gossard, U. K. Mishra,

Phys. Stat. Sol. B, 228 617, 2001)

 

2000

2)   Dipole scattering in polarization induced two-dimensional electron gases  

(D. Jena, A. C. Gossard, U. K. Mishra,

J. Appl. Phys., 88 4734, 2000)

1)   Dislocation scattering in a two-dimensional electron gas 

(D. Jena, A. C. Gossard, U. K. Mishra,

Appl. Phys. Lett., 76 1707, 2000)

 

 

 

Research Links


Journals, Library & ProxyLinks:

APL    JAP     XXX

PRL     RMP   PRB

Science            Nature             NatNano         NatMat           NatPhy           NatPho            NatComm       NatSReps

XPlore EDL    TED    Nano   JQE (Selected Topics)    Main           Submit

NanoLetters    APEX JJAP   JCG     SSE      SST

PSS      A         B         C         RRL

ILL      Renewal          Semiconductor Today Compound Semiconductor

 

Publications

Research

Conferences

InsideND

WebMail

Home