University of Notre Dame College of Engineering

Publications

Patents:

  • Polarization-doped field effect transistors (POLFETs) and materials and methods for making the same.
    US Patent Application No. 11/241,804.
    Debdeep Jena, Siddarth Rajan, Huili Xing and Umesh Mishra
  • Heterostructure based low-leakage buffer technology for GaN transistors.
    Pending, US Patent Application No. 61/283,511, filed on 12/4/09.
    Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
  • Polarization-enhanced doping in graded layer wide bandgap devices.
    Pending, US Patent Application No., filed in 2009.
    John Simon, Huili Xing and Debdeep Jena
  • Threshold voltage control for using work function engineering.
    Pending, US Patent Application No., filed in 2010.
    Guowang Li, Yu Cao, Ronghua Wang, Tom Zimmermann, Huili Xing and Debdeep Jena
  • Growth interruption technology of obtaining high mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN barriers.
    Pending, US Patent Application No., filed in 2010.
    Guowang Li, Yu Cao, Huili Xing and Debdeep Jena
  • Method for fabrication of low subthreshold swing vertical tunnel field-effect transistors.
    Pending, US Patent Application No., filed on 8/10/2010.
    Alan Seabaugh, Patrick Fay, Huili Xing, Yeqing Lu, Guangle Zhou, Mark Wistey, and Siyuranga Koswatta
  • Terahertz wave amplitude modulators.
    Pending US Patent Application No., filed on - 2011.
    Berardi Sensale-Rodriguez, Rusen Yan, Tian Fang, Michelle Kelly, Debdeep Jena, Lei Liu and Huili (Grace) Xing
  • Nitride-on-insulator Quantum Well Devices with Regrown Contacts.
    Pending, US Patent Application No. , filed in 2012.
    Guowang Li, Huili (Grace) Xing and Debdeep Jena
  • Complementary Nitride-on-Insulator Field Effect Transistors by Polarization induced doping.
    Pending, US Patent Application No. , filed in 2012.
    Guowang Li, Huili (Grace) Xing and Debdeep Jena


Books and Monographs:

  1. Book chapter: III-V nitride heterojunction bipolar transistors.
    Huili (Grace) Xing, Chuanxin *Lian and John Simon**
    Advanced semiconductor materials and device research - SiC and III Nitrides,
    Edited by Ho-Young Cha, 2009.
    (*Lian, Ph.D. student of Xing's; and ** Simon, co-advised Ph.D. student of Xing's)
  2. Book chapter: Graphene transistors.
    Kristof Tahy, ** Tian Fang, ** Pei Zhao, Aniruddha Konar, Chuanxin Lian, Huili Xing,
    Michelle Kelly and Debdeep Jena
    Intechweb, 2010
  3. Book chapter: Polarization-effects in III-nitride light emitting diodes.
    Debdeep Jena, Jai Verma, Amit Verma, Huili Xing, and Vladimir Protasenko*
    Book on Light Emitting Diodes, Woodhead Publishers, 2012.
    (*Co-advisee of Xing's)


Journal Articles

2013

  1. Michael Schuette, Andrew Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao, Shiping Guo, Patrick Fay, Huili (Grace) Xing, and Paul Saunier.
    Gate-recessed integrated E/D GaN HEMT technology with fT/fmax > 300 GHz.
    Submitted, (2013).
  2. Yuanzheng Yue, Zongyang Hu, Yenchun Lee, Berardi Sensale-Rodriguez, Guowang Li, Faiza Faria, Kazuki Nomoto, Suresh Vishwanath, Michael Schuette, Edward Beam, Andrew Ketterson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Grace Xing.
    Nucleation and conductivity of Pt films by plasma and thermal atomic layer deposition.
    Submitted, (2013).
  3. Berardi Sensale-Rodriguez, Lei Liu, Patrick Fay, Debdeep Jena, Lei Liu, and Huili (Grace) Xing
    Power amplification at THz via plasma wave excitation in RTD-gated HEMTs.
    To appear in IEEE Trans. THz Sci. Tech. (2013).
  4. Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Jai Verma, Guowang Li, Tian Fang, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Xiang Gao, Shipping Guo, Patrick Fay, Debdeep Jena, Huili (Grace) Xing
    Delay analysis in Enhancement-mode InAlN/AlN/GaN HEMTs with ft/fmax of 191/240 GHz.
    To appear in Solid State Electron. (2013).

2012

  1. Wan Sik Hwang, Maja Remskar, Rusen Yan, Tom Kosel, Jong Kyung Park, Byung Jin Cho, Wilfried Haensch, Huili Grace Xing, Alan Seabaugh and Debdeep Jena
    Comparative study of chemically synthesized and exfoliated multilayer MoS2 field effect transistors.
    Submitted, (2012).
  2. Berardi Sensale-Rodriguez, Subrina Rafique, Vladimir Protasenko, Rusen Yan, Mingda Zhu, Debdeep Jena, Lei Liu and Huili Grace Xing.
    THz imaging employing graphene modulator arrays.
    Submitted, (2012).
  3. Berardi Sensale-Rodriguez, Mingda Zhu, Haijun Zhang, Rusen Yan, Debdeep Jena, Lei Liu and Huili Grace Xing.
    Patterned semiconductor structures for THz and far-infrared plasmonic devices.
    Submitted, (2012).
  4. Yuanzheng Yue, Zongyang Hu, Yenchun Lee, Berardi Sensale-Rodriguez, Guowang Li, Faiza Faria, Kazuki Nomoto, Suresh Vishwanath, Michael Schuette, Edward Beam, Andrew Ketterson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Grace Xing.
    Nucleation and conductivity of Pt films by plasma and thermal atomic layer deposition.
    Submitted, (2012).
  5. Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Grace Xing.
    Ultrascaled InAlN/GaN HEMTs with fT of 400 GHz.
    To appear in Japan. J. Appl. Phys., (2013).
  6. Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Huili (Grace) Xing, Alan Seabaugh, Kun Xu, O. A. Kirillov, David J. Gundlach, Curt A. Richter, and N. V. Nguyen
    A unique photoemission method to measure semiconductor heterojunction band offsets.
    Submitted, (2012).
  7. Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan Seabaugh, Huili Grace Xing, John S. Suehle, Curt A. Richter, David J. Gundlach and N. V. Nguyen
    Direct measurement of intrinsic Dirac point of graphene by cavity enhanced internal photoemission.
    Submitted, (2012).
  8. Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Jia Guo, Zongyang Hu, Yuanzheng Yue, Faiza Faria, Michael Schuette, Andrew Ketterson, Edward Beam, Paul Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    Effect of fringing capacitance on RF performance of gate-recessed E-mode InAlN HEMTs
    with fT/fmax of 225/250 GHz.
    Submitted, (2012).
  9. Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly, Amit Verma, Jia Guo, Thomas Kosel, Huili (Grace) Xing, Debdeep Jena
    Polarization-induced GaN-on-Insulator p-channel heterostructure FETs.
    Submitted, (2012).
  10. Ronghua Wang, Guowang Li, Jia Guo, Faiza Faria, Berardi Sensale-Rodriguez, Yuanzheng Yue, Zongyang Hu, Vladimir Protasenko, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax of 260/220 GHz.
    To appear in Appl. Phys. Exp. (2013).
  11. Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Debdeep Jena, Lei Liu and Huili Grace Xing.
    Efficient terahertz electro-absorption modulation employing graphene plasmonic structures.
    To appear in Appl. Phys. Lett., (2013).
  12. Hongyan Shi, Rusen Yan, Simon Bertolazzi, Jacopo Brivio, Bo Gao, Andras Kis, Debdeep Jena, Huili Grace Xing and Libai Huang.
    Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals
    Submitted, (2012)
  13. Nan Sun, Kristof Tahy, Huili Grace Xing, Debdeep Jena, Gerald Arnold and Steven T. Ruggiero.
    Electrical noise and transport properties of graphene
    Submitted, (2012).
  14. Ronghua Wang, Guowang Li, Golnaz Karbasian, Jai Verma, Bo Song, Jia Guo, Yuanzheng Yue, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    Quaternary barrier InAlGaN HEMTs with InGaN channel and fT/fmax of 230/300 GHz.
    To appear in IEEE Electron Dev. Lett. (2013).
  15. Rusen Yan, Tian Fang, Simone Bertolazzi, Jacopo Brivio, Aniruddha Konar, Michelle Kelly, Debdeep Jena, Andras Kis, and Huili (Grace) Xing
    Raman and photoluminescence study of dielectric and thermal effects on atomically thin MoS2.
    Submitted, (2012).
  16. Berardi Sensale-Rodriguez, Rusen Yan, Lei Liu, Debdeep Jena, and Huili (Grace) Xing
    Graphene reconfigurable THz optoelectronics.
    Submitted, (2012).
  17. Faiza Faria, Jia Guo, Pei Zhao, Guowang Li, Prem Kumar Kandaswamy, Mark Wistey, Huili (Grace) Xing, and Debdeep Jena
    Low resistance ohmic contacts to GaN with high Si doping concentrations grown by
    molecular beam epitaxy.
    Appl. Phys. Lett., 101, 032109, (2012).
  18. Wan-Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo Doo Chae, Pei Zhao, Aniruddha Konar, Huili (Grace) Xing, Alan C. Seabaugh, and Debdeep Jena
    Transistors with chemically synthesized layered semiconductor WS2 exhibiting 10^5 room
    temperature modulation and ambipolar behavior.
    Appl. Phys. Lett., 101, 013107, (2012).
  19. Wan-Sik Hwang, Kristof Tahy, Xuesong Li, Huili (Grace) Xing, Alan C. Seabaugh, Chun Yung Sung, and Debdeep Jena
    Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown
    wafer-scale graphene.
    Appl. Phys. Lett., 100, 203107, (2012).
  20. Tim Vasen, Qingmin Liu, M. Shahriar Rahman, Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Dana C. Wheeler, Chen Chen, Niti Goel, Chanro Park, Haijun Zhu, Jenn -Ming Kuo, Siyuranga O. Koswatta, Thomas Kosel, Mark Wistey, Patrick Fay, Huili (Grace) Xing, and Alan Seabaugh
    Self-aligned regrowth process for InGaAs tunnel field-effect transistors
    Submitted to IEEE TED, 2012.
  21. Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    InAlN/AlN/GaN HEMTs with regrown ohmics and ft of 370 GHz.
    IEEE Electron Dev. Lett., 33(7), 988, (2012).
  22. Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Jai Verma, Guowant Li, Tian Fang, Edward Beam, Andrew Ketterson, Michael Schuette, paul Saunier, Xiang Gao, Shipping Guo, Patrick Fay, Debddep Jena, Huili (Grace) Xing
    Enhancement-mode InAlN/AlN/GaN HEMTs with ft/fmax of 191/240 GHz.
    Submitted to IEEE Electron Dev. Lett, (2012).
  23. O. Laboutin, Y. Cao, R. Wang, G. Li, D. Jena, H. Xing, C.-F. Lo, L. Liu, S. J. Pearton, F. Ren, and
    W. Johnson.
    InGaN channel high electron mobility transistor structures grown by metal organic chemical
    vapor deposition
    Appl. Phys. Lett., 100, 121909, (2012).
  24. Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Jai Verma, Guowant Li, Tian Fang, Edward
    Beam, Andrew Ketterson, Michael Schuette, paul Saunier, Xiang Gao, Shipping Guo, Patrick Fay, Debddep Jena, Huili (Grace) Xing
    Enhancement-mode InAlN/AlN/GaN HEMTs with ft/fmax of 191/240 GHz.
    Submitted to IEEE Electron Dev. Lett, (2012).
  25. Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Leg A. Kirilov, Curt A. Richter, N. V. Nguyen
    Tunnel field-effect transistor heterojuction band alignment by internal photoemission spectroscopy
    Appl. Phys. Lett., 100, 102104-7, (2012).
  26. Wan-Sik Hwang, K. Tahy, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K. Gaskill, H. Xing, A.C. Seabaugh and D. Jena
    Fabrication of top-gated epitaxial graphene nano-ribbon FETs using hydrogen-silsesquioxane (HSQ).
    J. of Vac. Sci. and Technol. B (JVST-B), 30(3), 03D104, 2012.
  27. Berardi Sensale-Rodriguez, Rusen Yan, Michelle Kelly, Tian Fang, Kristof Tahy, Wan Sik Hwang, Debdeep Jena, Lei Liu and Huili (Grace) Xing
    Broadband graphene THz modulators enabled by intraband transitions.
    Nature Communications, 3, 780, (2012). doi:10.1038/ncomms1787
  28. T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena
    Effect of Optical Phonon Scattering on the Performance of GaN Transistors
    IEEE Electron Dev. Lett., 33(5), 709-711, (2012).
  29. Guowang Li, Ronghua Wang, Jia Guo, Jai Verma, Zongyang Hu, Yuanzheng Yue, Faiza Faria, Yu Cao, Michelle Kelly, Thomas Kosel, Huili (Grace) Xing, Debdeep Jena
    Ultra-thin body GaN-on-insulaor quantum well FETs with regrown ohmic contacts.
    IEEE Electron Dev. Lett., 33(5), 661-663, (2012).
  30. Y. Lu, Guangle Zhou, Rui Li, Wan Sik Hwang, Qin Zhang, Tim Vasen, Tom Kosel, Mark Wistey, Huili (Grace) Xing, Alan C. Seabaugh, Patrick Fay
    Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned
    IEEE Electron Dev. Lett., 33(5), 655-657, (2012).
  31. Berardi Sensale-Rodriguez, Rusen Yan, Michelle Kelly, Tian Fang, Kristof Tahy, Wan Sik Hwang, Debdeep Jena, Lei Liu and Huili (Grace) Xing
    Active tuning of THz beam transmission using graphene
    Submitted to Nano Letters, (2011).
  32. Jia Guo, Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang, Jai Verma, Xiang Gao, Shipping Guo, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena, Huili (Grace) Xing
    MBE regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 ohmmm
    IEEE Electron Dev. Lett., 33(4), 525-7, (2012).
  33. Guangle Zhou, Yeqing Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen, Chen Chen, H. Zhu, J. Kuo, Tom Kosel, Mark Wistey, Alan Seabaugh, and Huili (Grace) Xing
    InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and 10^6 on/off current ratio.
    IEEE Electron Dev. Lett., 33(6),782, (2012).
  34. Rui Li, Guangle Zhou, Qingmin Liu, Soo Doo Chae, Tim Vasen, Wan Sik Hwang, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing, Alan Seabaugh
    AlGaSb/InAs tunnel field-effect transistor with on-current of 78 uA/um at 0.5V
    IEEE Electron Dev. Lett., 33(3), 363-5, (2012).
  35. Rui Li, Yeqing Lu, Soo Doo Chae, Guangle Zhou, Qingmin Liu, Chen Chen, M. Shahriar Rahman, Tim Vasen, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing, Siyuranga Koswatta and Alan Seabaugh
    InAs/AlGaSb heterojunction tunnel field-effect transistor with tunneling in-line with gate field
    Physica Status Solidi (c), 9(2), 389-392, (2012). DOI 10.1002/pssc.201100241.
  36. Prasanna Sivasubramani, Tae Joo Park, Bran E. Coss, Antonio Lucero, Jie Huang, Barry Brennan, Yu Cao, Debdeep Jena, Huili (Grace) Xing, Robert M. Wallace, Jiyoung Kim
    In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates.
    Phys. Status Solidi RRL, 6(1), 22-24, (2012).

2011

  1. O. Laboutin, Y. Cao, Ronghua Wang, Guowang Li, Debdeep Jena, Huili Xing, C.-F. Lo, L. Liu, S. J. Pearton, F. Ren, And W. Johnsoin.
    The resurgence of III-N materials development AlInN HEMTs and GaN-on-Si
    ECS Transcations, 41(8), 301-311, 2011.
  2. Kevin Goodman, Vladimir Protasenko, Jai Verma, Tom Kosel, Grace Xing, Debdeep Jena
    Molecular beam epitaxial growth of gallium nitride nanowires on atomic-layer deposited aluminum oxide.
    J. Crystal Growth, 334(1), 113-117, 2011.
  3. Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing and Debdeep Jena
    Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
    Appl. Phys. Lett., 99(19), 193504, (2011).
  4. Jai Verma, John Simon, Vladamir Protasenko, Tom Kosel, Huili Xing and Debdeep Jena
    N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping
    Appl. Phys. Lett., 99(17), 171104 (2011).
  5. Berardi Sensale-Rodriguez, Tian Fang, Rusen Yan, Michelle M. Kelly, Debdeep Jena, Lei Liu and Huili (Grace) Xing
    Unique prospects for graphene-based THz modulators
    Appl. Phys. Lett., 99, 113104, (2011).
  6. Ronghua Wang, Guowang Li, Jai Verma, Tom Zimmermann, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili
    (Grace) Xing
    Si-containing recessed ohmic contacts and 210-GHz quaternary barrier InAlGaN HEMTs
    Appl. Phys. Express, 4, 096502, (2011). SPOTLIGHTS
  7. Rui Li, Yeqing Lu, Soo Doo Chae, Guangle Zhou, Qingmin Liu, Chen Chen, M. Shahriar Rahman, Tim Vasen, Qin Zhang, Patrick Fay Tom Kosel, Mark Wistey, Huili (Grace) Xing, Siyuranga Koswatta and Alan Seabaugh
    InAs/AlGaSb heterojunction tunnel field-effect transistor with tunneling in-line with gate field
    Physica Status Solidi C, 1-4, (2011).
  8. Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim Vasen, C. Chen, H. Zhu, J. Kuo, Siyuranga Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh, and Huili (Grace) Xing
    Vertical InGaAsInP tunnel FETs with tunneling normal to the gate
    IEEE Electronic Device Letters, 32, 11, 1516-1518, (2011).
  9. Bo Gao, Gregory Hartland, Tian Fang, Michelle Kelly, Debdeep Jena, Huili (Grace) Xing and Libai Huang
    Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscope.
    Nano Letters, 11(8), 3184-3189, (2011).
  10. Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
    HIgh field transport and current saturation in 2D graphene
    Phys. Rev. B, 84(12), 125450, (2011).
  11. Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Jerry Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    220 GHz quaternary barrier InAlGAN/AlN/GaN HEMTs
    IEEE Electron Dev. Lett., 32(9), 1215-1217, (2011).
  12. Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Jerry Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    210-GHz InAlN/GaN HEMTs with dielectric-free passivation
    IEEE Electron Dev. Lett. 32(7), 892-894, 2011.
  13. Lei Liu, Jeffrey L. Hesler, Robert M. Weikle, II, Tao Wang, Patrick Fay and Huili (Grace) Xing
    A 570-630 GHz frequency domain terahertz spectroscopy system based on a broadband quasi-optical zero bias Schottky diode detector.
    International Journal of High Speed Electronics and Systems 20(3), 629-638, (2011).
  14. Berardi Sensale-Rodriguez, Lei Liu, Ronghua Wang, Debdeep Jena and Huili (Grace) Xing
    FET THz detectors operating in the quantum capacitance limited region.
    International Journal of High Speed Electronics and Systems, 20(3), p. 597-609, (2011).
  15. Tom Zimmerman, Yu Cao, Guowang Li, Gregory Snider, Debdeep Jena and Huili (Grace) Xing
    Subcritical barrier AlN/GaN E/D-mode HFETs and inverters.
    Physica Status Solidi (a), 208(7), 1620-1622, (2011).
  16. Jia Guo, Yu Cao, Chuanxin Lian, Tom Zimmerman, Guowang Li, Jai Verma, Xiang Gao, Shiping Guo, Mark Wistey, Debdeep Jena and Huili (Grace) Xing
    Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy.
    Physica Status Solidi (a), 208(7), 1617-1619, (2011).
  17. Libai Huang, Bo Gao, Gregory Hartland, Michelle Kelly, Huili Xing
    Ultrafast relaxation of hot optical phonons in monolayer and multilayer grapheme on different substrates.
    Journal of Surface Science, 605(17-18), 1657-1661, 2011.
  18. Debdeep Jena, John Simon, Kejia Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly, Guowang Li, K. Karda, Vladimir Protasenko, C. Lian, Tom Kosel, Patrick Fay, and Huili Xing
    Polarization engineering in group-III nitride heterostructures: New opportunities for device design.
    Phys. Stat. Solidi., 208(7), 1511-1516, (2011).
  19. Kevin Goodman, Vladimir Protasenko, Jai Verma, Thomas H. Kosel, Huili G. Xing and Debdeep Jena
    Green luminescence of InGaN nanowires grown on silicon substrates by MBE.
    J. of Appl. Phys., 109(8), 084336 (2011).
  20. Yu Cao, Kejia Wang, Guowang Li, Tom Kosel, Huili Xing, and Debdeep Jena
    MBE growth of high conductivity single and multiple AlN/GaN heterojunctions.
    J.Cryst. Growth, 323(1), 529-533, (2011).
  21. Ronghua Wang, Paul Saunier, Yong Tang, Xiang Gao, Shipping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    Enhancement-mode InAlN/AlNGaN HEMTs with 10-12 A/mm leakage current and 1012 ON/OFF
    current ratio.

    IEEE Electron Dev. Lett., 32(3), 309, (2011).

2010

  1. Guowang Li, Yu Cao, Huili Xing, and Debdeep Jena
    High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers.
    Appl. Phys. Lett., 97, 222110 (2010).
  2. Yu Cao, Huili Xing, and Debdeep Jena
    Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors.
    Appl. Phys. Lett., 97, 222116 (2010).
  3. Ronghua Wang, Paul Saunier, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili Grace Xing
    Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9 A/mm output current and 800 mS/mm transconductance.
    IEEE Electron Dev. Lett., 31(12), 1383, (2010).
  4. Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Patrick Fay, Huili Grace Xing and Debdeep Jena
    Threshold voltage control in Al0.72Ga0.28N/AlN/GaN HEMTs by work function engineering.
    IEEE Electron Dev. Lett., 31(9), 954, (2010).
  5. Qin Zhang, Yeqing Lu, Huili Grace Xing, Steve J. Koester and Siyuranga O. Koswatta
    Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons.
    IEEE Electron Dev. Lett., 31(6), 531, (2010).
  6. Libai Huang, Gregory Hartland, Li-Qiang Chu, Luxmi, Randall Feenstra, Chaunxin Lian, Kristof Tahy, Debdeep Jena and Huili Grace Xing
    Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene.
    Nano Letter, 10 1308, (2010).
  7. Yu Cao, Tom Zimmermann, Huili Grace Xing and Debdeep Jena
    Polarization-engineered removal of buffer leakage for GaN HEMTs.
    Appl. Phys. Lett., 96(4), 042102 (2010).
  8. Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili Grace Xing and Debdeep Jena
    Quantum transport in graphene nanoribbons patterned by metal etching mask.
    Appl. Phys. Lett., 96(10), 103109, (2010).
  9. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.
    Science, 327, 60 (2010).

2009

  1. John Simon, Ze Zhang, Kevin Goodman, Huili Xing, Tom Kosel, Patrick Fay and Debdeep Jena
    Polarization induced Zener tunnel junctions in wide-band-gap heterostructures.
    Phys. Rev. Lett., 103(2), 026801 (2009).
  2. Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena, and Huili Grace Xing
    4-nm AlN barrier all binary HFET with SiNx gate dielectric.
    International Journal of HIgh Speed Electronics and Systems, 19, 153 (2009).

2008

  1. Debdeep Jena, Tian Fang, Qin Zhang and Huili Grace Xing
    Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions.
    Appl. Phys. Lett., 93(11), 112106 (2008).
  2. Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
    Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering.
    Physical Review B, 78(20), 205403 (2008).
  3. Qin Zhang, Tian Fang, Huili Xing, Alan Seabaugh and Debdeep Jena
    Graphene nanoribbon tunnel transistors.
    IEEE Electron Dev. Lett., 29(12), 1344 (2008).
  4. Chuanxin Lian, Huili Grace Xing, Yu-Chia Chang and Nick Fichtenbaum
    Electrical transport properties of wafer fused p-GaAs/n-GaN heterojunctions.
    Appl. Phys. Lett., 93(11), (2008).
  5. Yanghai Yu, Vladimir Protasenko, Debdeep Jena, Huili (Grace) Xing and Masaru Kuno
    Photocurrent polarization anisotropy of randomly oriented nanowire networks.
    Nano Letter, 8(5), 1352-1357 (2008).
  6. Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing and Debdeep Jena
    Very low sheet resistance and Shubnikov-de-Haas oscillations in two dimensional electron gases at ultrathin binary AlN/GaN heterojunctions.
    Appl. Phys. Lett., 92(15), 152112, (2008).
  7. David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena and Xuili Xing
    2.3nm barrier AlN/GaN HEMTs with insulated gates.
    Physica Status Solidi (C), 5(6), 2047, (2008).
  8. Tom Zimmermann, David Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena and Huili Xing
    AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance.
    IEEE Electron Device Lett., 29(7), 661, (2008).
  9. Chuanxin Lian, Huili Grace Xing, Yu-Chi Chang and Nick Fichtenbaum
    The role of doping type in setback layers on wafer fused AlGaAs/GaN HBTs.
    Physica Status Solidi (C), 5(9), 2960, (2008).
  10. Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing
    Formation of ohmic contacts to ultrathin AlN/GaN HEMTs.
    Physica Status Solidi (C), 5(6), 2030 (2008).
  11. Chuanxin Lian and Huili Grace Xing
    The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs.
    Physica Status Solidi (C), 5(6), 1989, (2008).

2007

  1. Amoll Singh, Xiangyang Li, Vladimir Protasenko, Gabor Galantai, Masuru Kuno, Huili (Grace) Xing and Debdeep Jena
    Polarization sensitive photodetectors based on solution-synthesized semiconductor nanowire based quantum-wire solids.
    Nano. Letters, 7(10), 2999, (2007).
  2. Huili Xing, David Deen, Yu Cao, Tom Zimmermann, Patrick Fay and Debdeep Jena
    MBE-grown ultra-shallow AlN/GaN HFET technology.
    ECS Transactions, Vol. 11(5), 233, (2007).
  3. Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
    Carrier statistics and quantum capacitance of graphene sheets and ribbons.
    Appl. Phys. Lett., 91(9), 092109, (2007).
  4. Chuanxin Lian, Huili Grace Xing, Chad S. Wang, David Brown and Lee McCarthy
    Gain degradation mechanism in wafer fused AlGaAs/GaAs/GaN heterojunction bipolar transistors.
    Appl. Phys. Lett., 91(6), 063502 (2007).
  5. Ronghui Zhou, Hsueh-Chia Chang, Vladimir Protasenko, Masaru Kuno, Amol Kumar Singh, Debdeep Jena and Huili Xing
    CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission.
    J.of Appl. Phys., 101(7), 073704 (2007).
  6. Chuanxin Lian, Huili (Grace) Xing, Chad S. Wang, Lee McCarthy and Dave Brown
    DC characteristics of AlGAAs/GaAs/GaAs/GaN HBTs formed by direct wafer fusion.
    IEEE Electron Device Lett., 28(1), 8 (2007).

2006

  1. J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing and D. Jena
    Hot phonons in Si-doped GaN.
    Appl. Phys. Lett., 89(20), 202117 (2006).
  2. John Simon, Albert Wang, Huili Xing, Debdeep Jena and Siddharth Rajan
    Polarization-induced 3-dimensional electron slabs in graded AlGaN layers.
    MRS Symposium Proceedings, 0892 (2006).
  3. Siddharth Rajan, Steven P. DenBaars, Umesh K. Mishra, Huili Xing and Debdeep Jena
    Electron mobility in graded AlGaN alloys.
    Appl. Phys. Lett. 88(4), 042103 (2006).
  4. John Simon, Albert (Kejia) Wang, Huili Xing, Siddharth Rajan and Debdeep Jena
    Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering of AlGaN.
    Appl. Phys. Lett., 88(4), 042109 (2006).
  5. Chuanxin Lian and Huili (Grace) Xing
    Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin
    probe microscopy.

    Appl. Phys. Lett., 88(2), 022112 (2006).

2005

  1. Huili Xing, Steven P. DenBaars and Umesh K. Mishra
    Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors.
    J.Appl. Phys. 97(11), 113703 (2005).

2004

  1. Huili (Grace) Xing and Umesh K. Mishra
    Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs.
    International Journal of High Speed Electronics, 14(3), 819-824 (2004).
  2. D. Buttari, A. Chini, A. Chakraborty, L. McCarthy, Huili Xing, T. Palacios, L. Shen, S. Keller and U. K. Mishra
    Selective dry etching of GaN over AlGAN in BC13/SF6 mixtures.
    International Journal of HIgh Speed Electronics, 14(3), 132-137 (2004).
  3. S. McCarthy, N. Q. Zhang, H. Xing, B. Moran, S. DenBaars and U. K. Mishra
    High Voltage AlGaN/GaN heterojunction transistors.
    International Journal of HIgh Speed Electronics and Systems, 14(1), 225-243 (2004).
  4. Haijiang Yu, L. McCarthy, Huili Xing, P. Waltereit, L. Shen, S. Keller, S. P. Denbaars, J. S. Speck and U. K. Mishra
    Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing.
    Appl. Phys. Lett., 85(22), 5254 (2004).
  5. Arpan Chakraborty, Huili Xing, M. D. Craven, S. Keller, T. Mates, J. S. Speck, S. P. DenBaars and U. K. Mishra
    Nonpolar a-plane p-type GaN and p-n junction diodes.
    J.Appl. Phys. 96(8), 4494-4499 (2004).
  6. Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra and Debdeep Jena
    AlGaN/GaN polarization-doped field-effect transistor for microwave power applications.
    Appl. Phys. Lett., 84(9), 1591-1593 (2004).
  7. Huili Xing, Y. Dora, A. Chini, S. Heikman, S. Keller and U. K. Mishra
    High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plates.
    IEEE Elec. Dev. Lett., 25(4), 161-163 (2004).

2003

  1. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, Huili Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller and U. K. Mishra
    Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures.
    Appl. Phys. Lett., 83(23), 4779-4781 (2003).
  2. Xing, P. Chavarkar, S. Keller, S. P. DenBaars and U. K. Mishra
    Very high voltage operation (> 330V) with high current gain of AlGaN/GaN HBTs.
    IEEE Electron Device Lett., 24(3), 141-143 (2003).
  3. Sarah Estrada, Andrew Huntington, Andreas Stonas, Huili Xing, Umesh Mishra, Steven DenBaars, Larry Coldren and Evelyn Hu
    n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750 C.
    Appl. Phys. Lett., 83(3), 560-562 (2003).
  4. Sarah Estrada, Huili Xing, Andreas Stonas, Andrew Huntington, Umesh Mishra, Steven DenBaars, Larry Coldren and Evelyn Hu
    Wafter-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor.
    Appl. Phys. Lett., 82(5), 820-822 (2003).
  5. Xing, D. Jena, M. J. W. Rodwell and U. K. Mishra
    Explanation of anomalously high current gain observed in GaN based bipolar transistors.
    IEEE Electron Device Lett., 24(1), 4-6 (2003).
  6. Huili Xing, Daniel S. Green, Haijiang Yu, Tom Mates, Peter Kozodoy, Stacia Keller, Steven P. DenBaars and Umesh K. Mishra
    Memory effect and redistribution of Mg in regrown GaN layers by metalorganic chemical
    vapor deposition.
    Jpn. J. of Appl. Phys., 42(1), 50-53, (2003).

2002

  1. Debdeep Jena, Sten Heikman, Daniel Green, Dario Buttari, Robert Coffie, Huili Xing, Stacia Keller, Steven DenBaars, James Speck, Umesh K. Mishra and Ioulia Smorchkova
    Realization of wide electron slabs by polarization bulk doping in graded III-V nitride
    semiconductor alloys.

    Appl. Phys. Lett., 81(23), 4395-4397, (2002).
  2. Kung-Hsuan Lin, Gia-Wei Chern, Shi-Wei Chu, Chi-Kuang Sun, Huili Xing, Yulia Smorchkova, Stacia Keller, Umesh Mishra and Steven P. DenBaars
    Ultrashort hole capture time in Mg-doped GaN thin films.
    Appl. Phys. Lett., 81(21), 3975-3977, (2002).
  3. Buttari, A. Chini, G. Meneghesso, E. Zanoni, P. Chavarkar, R. Coffie, N. Q. Zhang, S. Heikman, L. Shen, H. Xing, C. Zheng and U. K. Mishra
    Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs.
    IEEE Electron Device Lett., 23(3), 118-120 (2002).

2001

  1. Xing, S. Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars and U. K. Mishra
    Gallium nitride based transistors.
    Phys., Condens. Matter., 13(32), 7139-7157 (2001).
  2. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M J. W. Rodwell and U. K. Mishra
    Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors.
    Appl. Phys. Lett., 78(15), 2235-2237 (2001).
  3. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars and U. K. Mishra
    GaN HBT: toward an RF device.
    IEEE Trans. Electron Devices, 48(3), 543-551 (2001).

2000

  1. J. B. Limb, H. Xing, B. Moran, L. McCarthy, S. P. DenBaars and U. K. Mishra
    High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage.
    Appl. Phys. Lett., 76(17), 2457-2459 (2000).
  2. Peter Kozodoy, Huili Xing, Steven P. DenBaars, Umesh K. Mishra, A. Saxler, R. Perrin, S. Elhamri and W. C. Mitchell
    Heavy doping effects in Mg-doped GaN.
    J. Appl. Phys. 87(4), 1832-1835 (2000).

1999

  1. Peter Kozodoy, Yulia P. Smorchkova, Monica Hansen, Huili Xing, Steven P. DenBaars and Umesh K. Mishra
    Polarization-enhanced Mg doping of AlGaN/GaN superlattices.
    Appl. Phys. Lett., 75(16), 2444-2446 (1999).
  2. J. B. Limb, L. McCarthy, P. Kozodoy, Huili Xing, J. Ibbetson, Y. Smorchkova, S. P. DenBaars and U. K. Mishra
    AlGaN/GaN HBTs using regrown emitter.
    Electron Lett. 35(19), 1671-1673 (1999).
  3. L. Zeng, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, H. Xing and G. S. Cargill, III
    Defect reduction of ZnxCdyMg1-x-ySe based structures grown on InP by using Zn irradiation of the III-V surface
    J. Vac. Sci. Technol. B, 17(3), 1255 (1999).


Conference papers:

(47 total and 41 of which are on research after joining Notre Dame):
(Underlined personnel: advised at ND; personnel in italic: co-advised at ND)

2012

  1. Guangle Zhou, Rui Li, Tim Vasen, Meng Qi, SooDoo Chae, Yeqing Lu, Qin Zhang, H. Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Novel gate-recessed vertical InAs/GaAs TFETs with record high Ion of 180 uA/um at VDS = 0.5V.
    IEEE International Electron Device Meeting (IEDM), San Francisco, December, 2012.
  2. Berardi Sensale-Rodriguez, Yeqing Lu, L. Barboni, F. Silverira, Patrick Fay, Debdeep Jena, Alan Seabaugh, and Huili Grace Xing
    Perspectives of TFETs for low power analog ICs. IEEE Subthreshold Microelectronics Conference, Waltham, MA, October 2012.
  3. (invited) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Vladimir
    Protasenko, Debdeep Jena, Lei Liu, and Huili Grace Xing
    Exceptional tenability of THz reflection in graphene structures.
    The Best Student Presentation Award. IRMMW-THz, Wollongong, Australia, September 2012.
  4. Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Michael Schuette, Andrew
    Ketterson, Edward Beam, Paul Saunier, Shiping Guo, Xiang Gao. Patrick Fay, Debdeep
    Jena, and Huili Grace Xing.
    Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz.
    Device Research Conference, Penn State University, June 2012.
  5. Guowang Li, Ronghua Wang, Jai Verma, Huili Grace Xing, and Debdeep Jena.
    Ultra-thin body GaN-on-Insulator nFETs and pFETs: towards III-nitride complementary
    logic.

    Device Research Conference, Penn State University, June 2012.
  6. Jai Verma, Prem Kumar, Amit Verma, Vladimir Protasenko, Huili Grace Xing, and
    Debdeep Jena
    Tunnel injection GaN/AlN quantum dot UV LED.
    Device Research Conference, Penn State University, June 2012.
  7. Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo
    Doo Chae, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
    First demonstration of two-dimensional WS2 transistors exhibiting 10^5 room temperature
    modulation and ambipolar bahavior.

    Device Research Conference, Penn State University, June 2012.
  8. (Invited) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-
    Quen Tserng, Shiping Guo, Xiang Gao. Patrick Fay, Grace Xing, Paul Saunier.
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference
    (GOMACTech), 2012.

2011

  1. Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Oleg A. Kirillov, Curt A.
    Richter, Nhan V. Nguyen
    Band alignment of TFET heterojunctions and post deposition annealing effects by internal
    photoemission spectroscopy.

    ISDRS 2011, University of Maryland, College Park, MD, December 7-9, 2011
  2. Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Guowang Li, Tian Fang, Paul Saunier, Andrew Ketterson, Michael Schuette, Xiang Gao, Shiping Guo, Yu Cao, Oleg Laboutin, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili (Grace) Xing
    Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fr near 200 GHz.
    ISDRS 2011, University of Maryland, College Park, MD, December 7-9, 2011.
  3. Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
    Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  4. Ronghua Wang, Guowang Li, Tian Fang, Oleg Laboutin, Yu Cao, J. W. Johnson, Greg Snider,
    Patrick Fay, Debdeep Jena, Huili Xing
    Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  5. Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim Vasen, H. Zhu,
    J. Kuo, S. Koswatta,Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Self-aligned InAs/Al0.45 Ga0.55 Sb vertical tunnel FETs.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  6. Tian Fang, Ronghua Wang, Guowang Li, Huili Xing, S. Rajan, Debdeep Jena
    Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  7. Paul Saunier, Andrew Ketterson, Michael Schuette, Tso-Min Chou, Jose Jimenez, Hua-Quen Tserng, Grace Xing, Shiping Guo, Xiang Gao
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.
  8. (Invited) Debdeep Jena, Kristof Tahy, Tian Fang, Pei Zhao, Wan Sik Hwang, Michelle Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, Rui Li, Huili Xing and Alan Seabaugh
    Graphene transistors for digital applications.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.
  9. Guangle Zhou, Yeqing Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen, C. Chen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh and Huili (Grace) Xing
    Self-aligned In0.53 Ga0.47 As/InAs/InP vertical tunnel transistors.
    International Conference on Compound Semiconductor Manufacturing Technology (CSManTech), Palm Springs, April 2011.

2010

  1. Yong Tang, Paul Saunier, Ronghua Wang, Andrew Ketterson, Xiang Gao, Shiping Guo, Gregory Snider, Debdeep Jena, Huili (Grace) Xing and Patrick Fay
    High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications.
    IEEE International Electron Device Meeting, San Francisco, 2010.
  2. (Invited) Debdeep Jena, Kristof Tahy, David Shilling, Qin Zhang, Tom Zimmermann, Patrick Fay, Huili Xing, Alan Seabaugh, Luxmi, Randall Feenstra, Siyuranga Koswatta
    Graphene transistors.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), 2010.
  3. (Invited) L. Liu, T. Wang, A. Biswas, Z. Cai, F. Watanabe, A.S. Biris, Marya Lieberman, Huili Xing and Patrick Fay
    Narrow spectral features of cellulose nanocomposites characterized by a frequency domain terahertz spectroscopy.
    ICCE, 2010.
  4. L. Liu, Berardi Sensale-Rodriguez, Z. Zhang, Tom Zimmermann, Yu Cao, Debdeep Jena, Patrick Fay and Huili Xing
    Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility transistors.
    The 21st International Symposium on Space Terahertz Technology, Oxford, March 2010.
  5. Ronghua Wang, Xiu Xing, Tian Fang, Tom Zimmermann, Chuanxin Lian, Guowang Li, Paul Saunier, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena, Huili (Grace) Xing
    High performance E-mode InAlN/GaN HEMTs: interface states from subthreshold slopes.
    The 68th Device Research Conference, Notre Dame, June 2010.
  6. Q. Zhang, Y. Lu, G. H. Xing, C. A. Richter, S. J. Koester and S. O. Koswatta
    Device characteristics of single-layer graphene FETs grown on copper.
    The 68th Device Research Conference, Notre Dame, June 2010.
  7. Kristof Tahy, Margaret Jane Fleming, Barbara Raynal, Vladimir Protasenko, Siyuranga Koswatta, Debdeep Jena, Huili (Grace) Xing and Michelle Kelly
    Device characteristics of single-layer graphene FETs grown on copper.
    The 68th Device Research Conference, Notre Dame, June 2010.
  8. Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Patrick Fay, Huili Xing and Debdeep Jena
    Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs.
    The 68th Device Research Conference, Notre Dame, June 2010.
  9. Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep Jena and Huili Xing
    Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors.
    International Conference on Compound Semiconductor Manufacturing Technology (Portland), April 2010.

2009

  1. Jia Guo, Tom Zimmermann, Debdeep Jena and Huili (Grace) Xing
    Ultra-scaled AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  2. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  3. Guangle Zhou, Sajid Kabeer, Dana Wheeler, Patrick Fay, Alan Seabaugh and Huili (Grace) Xing
    Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  4. Dana Wheeler, Sajid Kabeer, Yeqing Lu, Tim Vasen, Qin Zhang, Guangle Zhou, Kevin Clark, Haijun Zhu, Yung-Chung Kao, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Fabrication approach for lateral InGaAs tunnel transistors.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  5. Sajid Kabeer, Tim Vasen, Dana Wheeler, Qin Zhang, Siyuranga Koswatta, Haijun Zhu, Kevin Clark,
    Jenn Ming Kuo, Yung-Chung Kao, Sean Corcoran, Brian Doyle, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Effect of dopant profile on current-voltage characteristics of p+n+ In0.53GaAs tunnel junctions.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  6. Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili (Grace) Xing and Debdeep Jena
    Quantum transport in patterned graphene nanoribbons.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  7. Kristof Tahy, Chuanxin Lian, Huili (Grace) Xing and Debdeep Jena
    Operation regimes of double gated graphene nanoribbon FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  8. Tom Zimmermann, Yu Cao, Jia Guo, Xiangning Luo, Debdeep Jena and Huili Xing
    Top-down AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
  9. Kristof Tahy, David Shilling, Tom Zimmermann, Huili Xing, Patrick Fay, Luxmi, Randall Freenstra and Debdeep Jena
    Gigahertz operation of epitaxial graphene transistors.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
  10. Kristof Tahy, Siyuranga Koswatta, Tian Fang, Qin Zhang, Huili Xing and Debdeep Jena
    High field transport properties of 2D and nanoribbon graphene FETs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

2008

  1. John Simon, Huili Xing and Debdeep Jena
    Ultrathin AlN/GaN superlattice p-n junctions by MBE.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.
  2. Xiangning Luo, YenChun Lee, Anirudda Konar, Tian Fang, Gregory Snider, Huili Xing and Debdeep Jena
    Current-carrying capacity of long & short channel 2D graphene transistors.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.
  3. Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and Huili Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and ft of ~ 2.6 GHz.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.
  4. Chuanxin Lian and Huili Grace Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain ~ 20 and VBR > 35 V.
    International Conference on Compound Semiconductor Manufacturing Technology, Chicago, (April 2008).
  5. (Invited) Huili Xing, Tom Zimmermann, David Deen, Yu Cao, David Jena and Patrick Fay
    Ultrathin AlN/GaN heterostructure based HEMTs.
    International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech), Chicago, (April 2008).

2007

  1. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    Ultrashallow MBE-grown AlN/GaN HEMTs with record high current densities.
    International Semiconductor Device Research Symposium (ISDRS), Washington D.C., (Dec. 2007).
    Nominated for the Best Student Paper Award

2006

  1. A. Singh, A. Khandelwal, X. Li, Huili Xing, M. Kuno, and Debdeep Jena
    Field-effect transistors and photodetectors based on solution-synthesized nanowires.
    Conference Digest of 64th Device Research Conference, Penn Sate University, June 2006.

2002

  1. D. Scott, H. Xing, S. Krishnan, M. Urgeaga, N. Parthasarathy, and M. Rodwell
    InAlAs/InGaAs/InP DHBTs with polycrystalline InAs extrinsic emitter regrowth.
    60th Device Research Conference, Santa Barbara, CA, USA, June 2002.

2001

  1. (Invited) H. Xing, D. S. Green, L. McCarthy, I. P. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. P. DenBaars, J. Speck, and U. K. Mishra
    Progress in gallium nitride-based bipolar transistors.
    BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, September 2001.

2000

  1. L. McCarthy, Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars and U. Mishra
    HBT on LEO GaN.
    Conference Digest of 58th Device Research Conference, Denver, CO, USA, June 2000.
  2. H. Xing, L. McCarthy, S. Keller, S. P. DenBaars and U. K. Mishra
    High current gain GaN homojunction bipolar transistors.
    27th Int. Symp. on Compound Semi., Monterey, CA, USA, October 2000.


Invited Talks

  1. Physics and Chemistry of Surfaces and Interfaces (PCSI), Hawaii, January 2013.
    Graphene THz devices: role of surfaces and interfaces.
  2. The 3rd International Workshop on Terahertz Nanoscience (TeraNano 3), Hawaii, December 2012.
    Graphene and semiconductor plasmonics for THz technologies
  3. American Vacuum Society (AVS) annual meeting, Tampa, FL, October 2012.
    Surfaces and interfaces in vertical tunnel FETs.
  4. IWN (International Workshop on Nitride Semiconductors), Hokkaido, October, 2012.
    High speed GaN transistors.
  5. Tohoku University, Japan, October 2012.
  6. [KEYNOTE] ESREF (European Symposium on Reliability of Electron Devices, Failure Physics and Analysis), Cagliari, Italy, October 2012.
    Ultra-scaled GaN HEMTs and their reliability challenges.
  7. IRMMW-THz, Wollongong, Australia, September 2012.
    Exceptional tunability of THz reflection in graphene structures.
  8. University of Western Australia, Perth, September 2012.
  9. University of Minnesota, Minneapolis, September 2012.
  10. Kopin, Massachusetts, August 2012.
  11. NIST, Gaithersburg, June 2012.
  12. Purdue University, May 2012.
  13. North Carolina State University, May 2012.
  14. University of California, Santa Barbara, April 2012.
  15. HRL (Huges Research Laboratory), April 2012.
    GaN, graphene and tunnel transistor
  16. Fudan University, Shanghai, March 2012.
    GaN: The 3rd electronic revolution?
  17. CSTIC (China Semiconductor Technology International Conference), Shanghai, March 2012.
    Tunnel field-effect transistors for low voltage electronics.
  18. American Vacuum Society (AVS) annual meeting, Tampa, FL, October 2012
    Gate oxides in vertical tunnel FETs.
  19. Nippon Telegraph and Telephone Corporation (NTT), R&D center, Atsugi, Japan, 2011
    GaN HEMT, TFETs and graphene THz modulators.
  20. The 9th Topical Workshop on Heterostructure Microelectronics (TWHM), Japan, Aug. 2011
    GaN HEMTs with ultra-thin AlN barriers.
  21. ECS annual meeting, Boston, October, 2011
    >GaN transistors for power management.
  22. The Swiss Federal Institute of Technology Zurich (ETH Zurich), June, 2011
    GaN: the 3rd electronic revolution?
  23. University of Michigan, May, 2011
    GaN transistors.
  24. WOCSEMMAND, Savannah, February, 2011
    Recent progresses on InAlN/AlN/GaN HEMTs at Notre Dame.
  25. Indian Institute of Technology, Madras, December 2010
    GaN transistors.
  26. Ohio State University, March, 2010
    AlN/GaN HEMTs.
  27. WOCSEMMAND, California, February, 2010
    Recent progresses on AlN/GaN HEMTs.
  28. The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, December, 2009
    Top-down AlN/GaN nanoribbon HFETs.
  29. Asia-Pacific Workshop on Widegap Semiconductors (APWS), ZhangJiaJie, China, May 2009
    AlN/GaN based HEMTs.
  30. WOCSEMMAND, Florida, 2009
    Ohmic contacts to AlN/GaN heterostructures.
  31. Advanced Heterostructure Workshop, Hawaii, 2008
    Ultrashallow AlN/GaN heterostructures for HEMTs.
  32. International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech), Chicago, April, 2008
    Ultrathin AlN/GaN heterostructure based HEMTs.
  33. WOCSEMMAND, Palm Spring, CA, 2008
    Current status of AlGaAs/GaAs/GaN HBTs by wafer fusion.
  34. Argonne National Laboratory, April, 2008
    Prospects of graphene based electronics.
  35. ECS annual meeting, Washington DC, October, 2007
    MBE grown ultrashallow AlN/GaN HEMT technology.
  36. ONR Electronic Materials Review, Troy, NY, August, 2007
    Polarization-doped GaN bipolar transistors.
  37. WOCSEMMAND, Savannah, GA, 2007
    AlGaAs/GaAs/GaN HBTs by wafer fusion.
  38. Advanced Heterostructure Workshop, Hawaii, 2006
    Ultrashallow AlN/GaN heterostructures for HEMTs.
  39. GE Global Research Center, Schenectady, NY, 2006
    The development of GaN-based bipolar transistors.
  40. Naval Research Laboratory, Washington DC, 2004
    AlGaN/GaN heterojunction bipolar transistors.
  41. University of New Mexico, Albuquerque, New Mexico, 2004
    GaN-based bipolar transistors.
  42.   Compound Semiconductor (CS) Outlook, Dallas, Texas, 2003
    The growth of III-V nitrides and its effects on devices.
  43. BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, Sept. 2001
    Progress in gallium nitride-based bipolar transistors.
  44. Nippon Telegraph and Telephone Corporation (NTT), R&D center, Atsugi, Japan, 2001
    AlGaN/GaN heterojunction bipolar transistors with regrown emitter.


Conference Presentations

(181 total till Dec. 2012 and 172 of which are on research after
joining Notre Dame)

Starting from Year 2013, no more conference presentations will be recorded. But my group
attends and presents regularly in international conferences and workshops as evidenced
by the past records, including IEDM, DRC, EMC, IWN, ISCS etc. For example, in
2012 we contributed 36 conference presentations, as listed below.


2012:

  1. Guangle Zhou, Rui Li, Tim Vasen, Meng Qi, SooDoo Chae, Yeqing Lu, Qin Zhang, H.
    Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Novel gate-recessed vertical InAs/GaAs TFETs with record high Ion of 180 uA/um at VDS =
    0.5V.
    IEEE International Electron Device Meeting (IEDM), San Francisco, December, 2012.
  2. Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James Basham, Xuelei Liang, Debdeep
    Jena, Curt A. Richter, Alan Seabaugh, David J. Gundlach, Huili G. Xing and N. V. Nguyen.
    Graphene as an electrode for directly observing hole injection from silicon to oxide.
    Semiconductor Interface Specialist Conference, San Diego, Dec. 2012.
  3. Qin Zhang, Rusen Yan, Oleg A. Kirillov, Kun Xu, Curt A. Richter, Thomas Kosel, Huili
    G. Xing, Alan Seabaugh, Curt A. Richter, David J. Gundlach and N. V. Nguyen.
    Band offsets of Al2O3 on an InAs/AlGaSb heterojunction measured by internal
    photoemission.
    Semiconductor Interface Specialist Conference, San Diego, Dec. 2012.
  4. [Invited, keynote] Huili (Grace) Xing, Debdeep Jena
    Ultra-scaled GaN HEMTs and their reliability challenges.
    ESREF (European Symposium on Reliability of Electron Devices, Failure Physics and
    Analysis), Cagliari, Italy, October 2012.
  5. Berardi Sensale-Rodriguez, Yeqing Lu, L. Barboni, F. Silverira, Patrick Fay, Debdeep
    Jena, Alan Seabaugh, and Huili Grace Xing
    IEEE Subthreshold Microelectronics Conference, Waltham, MA, October 2012.
    Perspectives of TFETs for low power analog ICs.
  6. (Invited) Huili (Grace) Xing, Debdeep Jena
    High speed GaN transistors.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
  7. Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili (Grace) Xing and Debdeep
    Jena
    Reverse leakage in InAlN/AlN/GaN HEMTs: role of built-in polarization field.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
  8. Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
    Ronghua Wang, Faiza Faria, Bo Song, Xiang Gao, Shipping Guo, Thomas Kosel, Gregory
    Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    Ultrascaled InAlN/GaN HEMTs with ft of 400 GHz.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
  9. Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Yuanzheng Yue, Zongyang
    Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena
    and Huili (Grace) Xing
    Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
    Best Paper Award
  10. (Invited) Huili (Grace) Xing, Guangle Zhou, Soo Doo Chae, Y. Lu, Rui Li, Tim Vasen,
    Q. Zhang, J.-M. Kuo, H. Zhu, Patrick Fay, Tom Kosel, Alan Seabaugh, Mark Wistey
    Surfaces and interfaces in vertical tunnel FETs,"
    AVS annual meeting, Tampa FL, October 2012.
  11. (invited) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Vladimir
    Protasenko, Debdeep Jena, Lei Liu, and Huili Grace Xing
    IRMMW-THz, Wollongong, Australia, September 2012.
    Exceptional tenability of THz reflection in graphene structures.
    Best Student Presentation Award
  12. Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace
    Xing, and Debdeep Jena
    GaN/AlN quantum dot UV LEDs utilizing tunnel transport by plasma-assisted molecular
    beam epitaxy.
    The 17th International Conference on MBEs, Nara, Japan, September 2012.
  13. Berardi Sensale-Rodriguez, Patrick Fay, Lei Liu, Debdeep Jena, and Huili Grace Xing
    Enhanced terahertz detection in resonant tunnel diode-gated HEMTs.
    The 27th Symposium on Microelectronics Technology and Devices, Brasilia, Brazil, August
    2012.
  14. Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt Richard, Angela R. Hight-
    Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, and Huili Grace Xing, David
    Gundlach, and Nhan Van Nguyen
    Investigation of graphene-oxide-semiconductor band alignment by internal photoemission
    spectroscopy.
    International Symposium on Compound Semiconductors, UCSB, August 2012.
  15. Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Subrina Rafique, Suresh
    Vishwanath, Wan Sik Hwang, Kristof Tahy, Vladimir Protasenko, Michelle Kelly, Lei Liu,
    Debdeep Jena, and Huili Grace Xing
    THz reconfigurable optoelectronic devices employing graphene.
    International Symposium on Compound Semiconductors, UCSB, August 2012.
  16. Wan Sik Hwang, Pei Zhao, Kristof Tahy, Xuesong Li, Chun-Yung Sung, Huili Grace
    Xing, Alan C. Seabaugh, and Debdeep Jena
    Ultrathin grapheme nanoribbon transistors on wafer-scale chemical-vapor-deposited
    graphene.
    International Symposium on Compound Semiconductors, UCSB, August 2012.
  17. Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace
    Xing, and Debdeep Jena
    GaN/AlN quantum dot UV LEDs utilizing tunnel transport by plasma-assisted molecular
    beam epitaxy.
    International Symposium on Semiconductor LEDs, Berlin, Germany, July 2012.
  18. Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Michelle Kelly, Lei Liu,
    Debdeep Jena, and Huili Grace Xing
    Active THz metamaterials based on self-gated 2DEGs.
    Lester Eastman Conference, Brown University, August 2012.
  19. Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Edward Beam, Michael Schuette,
    Andrew Ketterson, Paul Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, and
    Huili Grace Xing
    Gate-recessed E-mode InAlN/AlN/GaN HEMTs with ft/fmax of 225/250 GHz.
    Lester Eastman Conference, Brown University, August 2012.
  20. Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
    Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Gregory
    Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    InAlN/AlN/GaN HEMTs with regrown ohmics and ft of 370 GHz.
    Electronic Materials Conference, Penn State University, June 2012.
  21. Vladimir Protasenko, Jai Verma, Huili Grace Xing, and Debdeep Jena
    Excitonic and free carrier recombination in high indium content InGaN layers grown by
    MBE for photovoltaics.
    Electronic Materials Conference, Penn State University, June 2012.
  22. Faiza Faria, Jia Guo, Pei Zhao, Guowang Li, Prem Kandaswamy, Huili Grace Xing, and
    Debdeep Jena
    Study on alloyed ohmic contacts to MBE grown n+GaN with various Si doping
    concentrations.
    Electronic Materials Conference, Penn State University, June 2012.
  23. Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Michael Schuette, Andrew
    Ketterson, Edward Beam, Paul Saunier, Shiping Guo, Xiang Gao. Patrick Fay, Debdeep
    Jena, and Huili Grace Xing.
    Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz.
    Device Research Conference, Penn State University, June 2012.
  24. Guowang Li, Ronghua Wang, Jai Verma, Huili Grace Xing, and Debdeep Jena.
    Ultra-thin body GaN-on-Insulator nFETs and pFETs: towards III-nitride complementary
    logic.
    Device Research Conference, Penn State University, June 2012.
  25. Jai Verma, Prem Kumar, Amit Verma, Vladimir Protasenko, Huili Grace Xing, and
    Debdeep Jena
    Tunnel injection GaN/AlN quantum dot UV LED.
    Device Research Conference, Penn State University, June 2012.
  26. Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo
    Doo Chae, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
    First demonstration of two-dimensional WS2 transistors exhibiting 10^5 room temperature
    modulation and ambipolar bahavior.
    Device Research Conference, Penn State University, June 2012.
  27. (invited) Wan Sik Hwang, Kristof Tahy, Pei Zhao, R. Myers-Ward, P. Campbell, C.
    Eddy Jr., K. Gaskill, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
    Wafer-scale grapheme nanoribbon transistor technology.
    The 221st ECS Meeting, Seattle, May 2012.
  28. Syed M. Rahman, Yi Xie, Zhenguo Jiang, Huili Xing, Patrick Fay and Lei Liu
    The development of terahertz focal-plane array elements using Sb-based heterostructure
    backward diode.
    The 23rd International Symposium on Space Terahertz Technology, Tokyo, April 2012.
  29. Nan Sun, Gerald Arnold, Kristof Tahy, Jianchun Zeng, Huili Xing, Debdeep Jena and
    Steven Ruggiero
    Low-frequency noise in graphene FETs
    APS Marching Meeting, March 2012
  30. Golnaz Karbasian, Alexei O. Orlov, Patrick J. Fay, Huili Xing, Debdeep Jena and
    Gregory L. Snider
    High aspect ratio features in PMGI using electron beam lithography and solvent developers
    International Conference on electron, ion and photon beam technology and nanofabrication
  31. (Invited) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-
    Quen Tserng, Shiping Guo, Xiang Gao. Patrick Fay, Grace Xing, Paul Saunier.
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference
    (GOMACTech), 2012.
  32. (Invited) Huili (Grace) Xing, Guangle Zhou, Soo Doo Chae, Y. Lu, Rui Li, Tim Vasen, Q. Zhang, J. -M Kuo, H. Zhu, Patrick Fay, Tom Kosel, Alan Seabaugh, Mark Wistey
    Gate oxides in vertical tunnel FETs,"
    AVS annual meeting, Tampa, FL, October 2012
  33. (Invited) Huili (Grace) Xing
    GaN: The 3rd electronic revolution?
    CSTIC (China Semiconductor Technology International Conference), Shanghai, March 2012.
  34. (Invited) Huili (Grace) Xing
    Tunnel field-effect transistors for low voltage electronics.
    CSTIC (China Semiconductor Technology International Conference) Shanghai, March 2012.
  35. (Invited) Huili (Grace) Xing
    Graphene THz modulators.
    WOCSEMMAND (Workshop on Compound Semiconductor Materials and Devices), Nappa Valley, February 2012.
  36. Wan-Sik Hwang, Kristof Tahy, Pei Zhao, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K. GAskill, Huili Xing, Alan C. Seabaugh and Debdeep Jena
    Wafer-scale graphene nanoribbons for tunnel FET applications.
    The 19th Korean Conference on Semiconductors (KCS), Korea, February 2012.

2011:

  1. Soo Doo Chae, Guangle Zhou, Irere Kwihangana, Rui Li, Yeqing Lu, Qingmin Liu, Tim Vasen, Qin Zhang, Wan-Sik Hwang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing and Alan Seabaugh
    Characterization of Interface Traps in Metal-High k-InAs/GaAs TFTETs.
    IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA 2011.
  2. Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Oleg A. Kirilov, Curt A. Richter, and Nhan V. Nguyen
    Band Alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy.
    ISDRS 2011, College Station, MD, December 2011.
  3. Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Guowang Li, Tian Fang, Paul Saunier, Andrew Ketterson, Michael Schuette, Xiang Gao, Shiping Guo, Yu Cao, Oleg Laboutin, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fr near 200 GHz.
    ISDRS 2011, College Station, MD, December 2011.
  4. (Invited) Huili (Grace) Xing, Ronghua Wang, Jia Guo, Guowang Li, Zongyang Hu, Jai Verma, Tom Zimmermann, Tom Kosel, Mark Wistey, Gregory Snider, Patrick Fay, and Debdeep Jena
    TWHM2011-Xing.
    The 9th Topical Workshop on Heterostructure Microelectronics (TWHM), Japan, August 2011.
  5. (Invited) Huili (Grace) Xing, Ronghua Wang, Jia Guo, Guowang Li, Zongyang, Hu, Jai Verma, Tom Zimmermann, Tom Kosel, Mark Wistey, Gregory Snider, Patrick Fay, and Debdeep Jena
    GaN transistors for power managment.
    ECS Annual Meeting, Boston, October 2011.
  6. (Invited) Oleg Laboutin, Y. Cao, Ronghua Wang, Guowang Li, Debdeep Jena, Huili Xing, C.-F. Lo, L.
    Liu, S. J. Pearton, F. Ren, and W. Johnson
    The resurgence of III-N-materials development: AlInN HEMTs and GaN-on-Si
    ECS Annual Meeting, Boston, October 2011.
  7. (Invited) Alan Seabaugh, Soo Doo Chae, Patrick Fay, Wan Sik Hwang, Tom Kosel, Rui Li, Qingmin Liu, Yeqing Lu, Tim Vasen, Mark Wistey, Huili Xing, Guangle Zhou, Qin Zhang
    III-V Tunnel FETs.
    ECS Annual Meeting, Boston, October 2011.
  8. (Invited) Alan Seabaugh, Soo Doo Chae, Patrick Fay, Wan Sik Hwang, Tom Kosel, Rui Li, Qingmin Liu, Yeqing Lu, Tim Vasen, Mark Wistey, Huili Xing, Guangle Zhou, Qin Zhang, Robert M. Wallace
    Interface traps and low subthreshold swing in III-V tunnel FETS.
    AVS Annual Meeting, 2011.
  9. Jia Guo, Yu Cao, Jai Verma, Xiang Gao, Shiping Guo, Ed Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena and Huili Xing
    MBE regrown non-alloyed ohmics with a regrowth interface contact resistance of 0.05 ohm-mm in InAlN/AlN/GaN high electron mobility transistor.
    9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10-15, 2011.
  10. Jai Verma, Guowang Li, Vladimir Protasenko, Prem Kumar Kandaswamy, Huili Xing, and Debdeep Jena
    Pseudomorphic AlN and high composition AlGaN growth by MBE.
    9th International Conference on Nitride Semiconductors, SEC,Glasgow, July 10-15, 2011.
  11. Kevin Goodman, Vladimir Protasenko, Tom Kosel, Grace Xing, Debdeep Jena
    MBE-grown gallium nitride nanowires on atomic layer deposited aluminum oxide.
    9th International Conference on Nitride Semiconductors, SEC, Glasgow, July 10-15, 2011.
  12. Ronghua Wang, Guowang Li, Jai Verma, Xiang Gao, Shiping Guo, Oleg Labooutin, Yu Cao, J. Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili Xing
    Alloyed ohmic contacts with Si interlayer on AlN-bearing HEMTs and 220-GHz GaN HEMTs.
    9th International Conference on Nitride Semiconductors, SEC, Glasgow, July 10-15, 2011.
  13. Wan Sik Hwang, Kristof Tahy, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, Huili Xing, Alan C. Seabaugh, Debdeep Jena
    Fabrication of top-gated sub-10 nm epitaxial graphene nanoribbon FETs using hydrogen silsesquioxan (HSQ).
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.
  14. Vladimir Protasenko, Jai Verma, Guowang Li, Huili (Grace) Xing, Debdeep Jena
    Optical properties of molecular beam epitaxy grown high in content (~20%) InGaN film emitting in green (540 nm).
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.
  15. Satyaki Ganguly, Jai Verma, Guowang Li, Huili Xing, Debdeep Jena
    ALD Al2O3 thickness-dependent study of AlN/GaN MOS-HEMTs.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.
  16. Jia Guo, Jai Verma, Yu Cao, Xiang Gao, Shiping Guo, Ed Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena, Huili (Grace) Xing.
    MBE regrown ohmic contacts with Rc of 0.15 ohm-mm in InAlN/GaN high electron mobility transistor.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.
  17. Ramya Yeluri, Jing Lu, Xiang Liu, Brian Swenson, Umesh Mishra, Guangle Zhou, Huili Xing
    Interface state density for positive band offset dielectrics (Al2O3, SiO2) on GaN.
    53rd Electronic Materials Conference and Exhibition, University of California-Santa Barbara, June 22-24, 2011.
  18. Guangle Zhou, Yeqing Lu, Rui Li, Tim Vasen, Qingmin Liu, Wan Sik Hwang, Qin Zhang, Haijun Zhu, Jenn Ming Kuo, Siyuranga Koswatta, Mark Wistey, Tom Kosel, Patrick Fay, Alan Seabaugh, Huili Xing.
    Passivation effects of ALD oxides on self-aligned In0.53 Ga0.47 As/InAsInP vertical tunnel FETs.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.
  19. Berardi Sensale-Rodriguez, Rusen Yan, Michelle Kelly, Tian Fang, Kristof Tahy, Debdeep Jena, Lei Liu, Huili Grace Xing
    Frequency domain THz characterization of graphene.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA June 22-24, 2011.
  20. Bo Gao, Libai Huang, Gregory Hartland, Michelle Kelly, Huili Xing, Debdeep Jena
    Charge carrier dynamics in graphene: Suspended vs. supported.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24 2011.
  21. Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
    Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  22. Ronghua Wang, Guowang Li, Tian Fang, Oleg Laboutin, Yu Cao, J. W Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili Xing
    Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  23. Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim Vasen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Self-aligned InAs/Al0.45 Ga0.55 Sb vertical tunnel FETs.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  24. Tian Fang, Ronghua Wang, Guowang Li, Huili Xing, S. Rajan, Debdeep Jena
    Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
  25. Kristof Tahy,Wan Sik Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, Huili Xing, Alan C. Seabaugh, Debdeep Jena
    Control of the unintentional doping in epitaxial grapheme FETs.
    Graphene Conference, Bilbao, Spain, 2011.
  26. Nan Sun, Owen Zeng, Kristof Tahy, Wan Sik Hwang, Huili Xing, Debdeep Jena, Gerald Arnold, and Steven T. Ruggiero
    Electrical noise in graphene.
    APS March Meeting, 2011.
  27. (Invited) Paul Saunier, Andrew Ketterson, Michael Schuette, Tso-Min Chou, Jose Jimenez, Hua-Quen Tserng, Grace Xing, Shiping Guo, Xiang Gao
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.
  28. (Invited) Debdeep Jena, Kristof Tahy, Tian Fang, Pei Zhao, Wan Sik Hwang, Michelle Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, Rui Li, Huili Xing, and Alan Seabaugh
    Graphene transistors for digital applications.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.
  29. Guangle Zhou, Y. Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen, C. Chen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh, and Huili (Grace) Xing
    Self-aligned In0.53 Ga0.47As/InAs/InP vertical tunnel transistors.
    (CSManTech), Palm Springs, April 2011.
  30. (Invited) Huili (Grace) Xing, Ronghua Wang, Jia Guo, Guowang Li, Jai Verma, Tom Zimmermann, Yu Cao, Tom Kosel, Mark Wistey, Gregory Snider, Patrick Fay, Debdeep Jena
    Recent progresses on InAlN/AlN/GaN HEMTs at Notre Dame.
    WOCSEMMAND, Savannah, February, 2011.

2010:

  1. Yong Tang, Paul Saunier, Ronghua Wang, Andrew Ketterson, Xiang Gao, Shipping Guo, Gregory Snider, Debdeep Jena, Huili (Grace) Xing and Patrick Fay
    High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications.
    IEEE International Electron Device Meeting, San Francisco, 2010.
  2. Prasana Sivasubramani, TaeJoo Park, Brian E. Coss, Stephen McDonnell, Robert M. Wallace, Jiyoung Kim, Yu Cao, Debdeep Jena, Huili (Grace) Xing
    In-situ XPS and half-cycle studies of atomic layer deposited Al2O3 on group-III nitride substrate for MOS HEMT applications.
    American Vacuum Society 57th International Symposium and Exhibition, Albuquerque, 2010.
  3. Yu Cao, Chuanxin Lian, Guowang Li, Jia Guo, Ronghua Wang, Guangle Zhou, Mark Wistey, Pauy Saunier, Shipping Guo, Huili (Grace) Xing and Debdeep Jena
    MBE-regrown ohmics for metal-polar InAlN/GaN HEMTs.
    International Workshop on Nitride Semiconductors, Tempa, 2010.
  4. Tom Zimmermann, Vladimir Protasenko, Yu Cao, Guowang Li, Huili (Grace) Xing and Debdeep Jena
    Hot electron transport and delay time analysis in isotope mixture 15N/14N AlGaN/GaN HEMT structures.
    International Workshop on Nitride Semiconductors, Tempa, 2010.
  5. Ronghua Wang, Paul Saunier, Yong Tang, Xiang Gao, Shipping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    E-mode InAlN HEMTs with 10-12 A/mm leakage current and 1012 on/off current ratio.
    International Workshop on Nitride Semiconductors, Tempa, 2010.
  6. Huili (Grace) Xing, Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Ronghua Wang, Gregory Snider, Patrick Fay, Debdeep Jena
    MBE grown ultra-thin barrier (AlGa)N/AlN/GaN HEMTs.
    The 16th International Conference on Molecular Beam Epitaxy, Berlin, 2010.
  7. Kristof Tahy, Huili Xing and Debdeep Jena
    Graphene nanoribbon p-n junction channel FETs: Experiment and modeling.
    IEEE Lester Eastman Conference, Troy, NY 2010.
  8. Huili (Grace) Xing, Chuanxin Lian, Zongyang Hu, Shalini Lal, Eric Snow and Umesh K. Mishra
    Wafer fusion enabled heterojunction transistors (WAFEHT).
    IEEE Lester Eastman Conference, Troy, NY 2010.
  9. Berardi Sensale-Rodriguez, Lei Liu, Ronghua Wang, Debdeep Jena and Huili (Grace) Xing
    FET THz detectors operating in the quantum capacitance limited region.
    IEEE Lester Eastman Conference, Tory, NY 2010.
  10. Lei Liu, Jeffrey L. Hesler, Robert M. Weikle, II, Tao Wang, Patrick Fay, Huili (Grace) Xing
    A 570-630 GHz frequency domain terahertz spectroscopy system based on a broadband quasi-optical zero bias Schottky diode detector.
    IEEE Lester Eastman Conference, Troy, NY 2010.
  11. (Invited) L. Liu, T. Wang, A. Biswas Z. Cai, F. Watanabe, A. S. Biris, M. Lieberman, H. Xing and P. Fay
    Narrow spectral features of cellulose nanocomposites characterized by a frequency domain terahertz spectroscopy.
    ICCE, 2010.
  12. L. Liu, B. Sensale-Rodriguez, Z. Zhang, T. Zimmermann, Y. Cao, D. Jena, P. Fay and H. Xing
    Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility transistors.
    The 21st International Symposium on Space Terahertz Technology, Oxford, March 2010.
  13. Zongyang Hu, Chuanxin Lian, Zhen Chen, Yu-Chia Chang and Huili (Grace) Xing
    AlGaAs/GaAs/GaN wafer fused HBTs with Ar implanted extrinsic collectors.
    Electronic Materials Conference (EMC) 2010, University of Notre Dame, June 2010.
  14. Yu Cao, Guowang Li, Ronghua Wang, Tom Zimmermann, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization-engineered low-leakage buffers for nitride HEMTs grown by MBE.
    Electronic Materials Conference (EMC) 2010, University of Notre Dame, June 2010.
  15. Yeqing Lu, Alan Seabaugh, Huili Xing, Tom Kosel, Siyuranga Koswatta, Haijun Zhu, Kevin Clark, Jenn Ming Kuo, Yung-Chung Kao and Patrick Fay
    High temperature transport properties of GaN HEMTs with various heterostructures designs.
    Electronic Materials Conference (EMC) 2010, University of Notre Dame, June 2010.
  16. Vladimir Protasenko, Kevin Goodman, Thomas Kosel, Huili Xing and Debdeep Jena
    Photoluminescence of In-graded InGaN wires grown by molecular beam epitaxy.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  17. Tom Zimmermann, Yu Cao, Guowang Li, Patrick Fay, Gregory Snider, Debdeep Jena and Huili
    Grace Xing
    PECVD-SiN, Si or Si/Al2O3-capped ed-mode AlN/GaN inverters.
    Electronic Materials Conference (EMC), University of Notre Dame, 2010.
  18. Ronghua Wang, Yu Cao, Guowang Li, Tom Zimmermann, Chuanxin Lian, Xiang Gao, Shipping Guo, Debdeep Jena and Huili Grace Xing
    High temperature transport properties of GaN HEMTs with various heterostructures designs.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  19. Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep Jena and Huili Grace Xing
    Source-drain regrowth by MBE in metal-face AlN/GaN HEMTs.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  20. Michelle Kelly, Kristof Tahy, M. Jane Fleming, Barbara Raynal, Vladimir Protasenko, Debdeep Jena and Grace Xing.
    Fabrication and characterization of graphene materials via CVD on copper based substrates.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  21. Libai Huang, Gregory Hartland, Liqiang Chu, Chuanxin Lian, Kristof Tahy, Debdeep Jena and Huili (Grace) Xing.
    Ultrafast transient absorption studies of carrier dynamics in epitaxial graphenen.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  22. Guowang Li, Yu Cao, Huili Grace Xing and Debdeep Jena
    High Al composition Al0.72 Ga0.28N/AlN/GaN heterostructures with high mobility two-dimensional electron gas.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  23. Guangle Zhou, Haijun Zhu, Paul Pinsukanjana, Yung-Chung Kao, Tom Kosel, Patrick Fay, Mark Wistey, Alan Seabaugh and Huili (Grace) Xing
    Regrown InGaAs tunnel junctions for TFETs.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.
  24. Berardi Sensale-Rodriguez, L. Liu, Z. Zhang, Patrick Fay and Huili Xing
    Initial study of microwave and terahertz detectors using AlN/GaN HEMTs.
    Electronic Materials Conference (EMC), University of Notre Dame, 2010.
  25. Ronghua Wang, Xiu Xing, Tian Fang, Tom Zimmermann, Chuanxin Lian, Guowang Li, Paul Saunier, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    High performance E-mode InAlN/GaN HEMTs: interface states from subthreshold slopes.
    The 68th Device Research Conference, Notre Dame, June 2010.
  26. Qin Zhang, Y. Lu, Grace H. Xing, C. A. Richter, S. J. Koester and Siyuiranga O. Koswatta
    Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities.
    The 68th Device Research Conference, Notre Dame, June 2010.
  27. Kristof Tahy, Margaret Jane Fleming, Barbara Raynal, Vladimir Protasenko, Siyuranga Koswatta, Debdeep Jena, Huili (Grace) Xing and Michelle Kelly
    Device characteristics of single-layer graphene FETs grown on copper.
    The 68th Device Research Conference, Notre Dame, June 2010.
  28. Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Patrick Fay, Huili Xing and Debdeep Jena
    Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs.
    The 68th Device Research Conference, Notre Dame, June 2010.
  29. (Invited) Debdeep Jena, Kristof Tahy, David Shiling, Qin Zhang, Tom Zimmermann, Patrick Fay, Huili Xing, Alan Seabaugh, Luxmi, Randall Feenstra and Siyu Koswatta
    Graphene transistors.
    Government Microcircuit Applications and Critical Technology Conference (GOMACTech), California, March 2010.
  30. Nan Sun, Kristof Tahy, Debdeep Jena, Huili Xing and Steven Ruggiero
    Au/Graphene/Nb tunnel structures.
    APS March Meeting, Colorado, March 2010.
  31. Huili Grace Xing, Chuanxin Lian and Zongyang Hu
    AlGaAs/GaAs/GaN heterojunction bipolar transistors by wafer fusion.
    IEEE UGIM Symposium, West Lafayette, June 2010.
  32. Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep Jena and Huili Xing
    Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors.
    International Conference on Compound Semiconductor Manufacturing Technology (Portland), April 2010.
  33. Lei Liu, Berardi SensaleRodriguez, Ze Zhang, Tom Zimmermann, Yu Cao, Debdeep Jena, Patrick Fay and Huili Grace Xing
    Development of microwave and THz detectors utilizing AlN/GaN HEMTs.
    International Symposium on Space Terahertz Technology (ISSTT), UK, March 2010.
  34. (Invited) Huili Grace Xing
    Recent progresses on AlN/GaN HEMTs.
    WOCSEMMAND, California, February 2010.


2009:

  1. Debdeep Jena, Kristof Tahy, Xiangning Luo, Qin Zhang, Luxmi, Siyuranga Koswatta, Tom Zimmermann, Randall Freenstra, Patrick Fay, Huili Grace Xing and Alan Seabaugh
    Graphene physics and device applications.
    The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, December 2009.
  2. Huili Grace Xing, Tom Zimmermann, Yu Cao, Jia Guo and Debdeep Jena
    Top-down AlN/GaN nanoribbon HFETs.
    The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, December 2009.
  3. Jia Guo, Tom Zimmermann, Debdeep Jena and Huili (Grace) Xing
    Ultra-scaled AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  4. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  5. Guangle Zhou, Sajid Kabeer, Dana Wheeler, Alan Seabaugh and Huili (Grace) Xing
    Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  6. Dana Wheeler, Sajid Kabeer, Yeqing Lu, Tim Vasen, Qin Zhang, Guangle Zhou, Kevin Clark, Haijun Zhu, Yung-Chung Kao, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Fabrication approach for lateral InGaAs tunnel transistors.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  7. Sajid Kabeer, Tim Vasen, Dana Wheeler, Qin Zhang, Siyuranga Koswatta, Haijun Zhu, Kevin Clark, Jenn Ming Kuo, Yung-Chung Kao, Sean Corcoran, Brian Doyle, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Effect of dopant profile on current-voltage characteristics of p+n+ In0.53GaAs tunnel junctions.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  8. Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili (Grace) Xing and Debdeep Jena
    Quantum transport in patterned graphene nanoribbons.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  9. Kristof Tahy, Chuanxin Lian, Huili (Grace) Xing and Debdeep Jena
    Operation regimes of double gated graphene nanoribbon FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
  10. Debdeep Jena, Kristof Tahy, Xiangning Luo, Qin Zhang, Luxmi, Siyuranga Koswatta, Tom Zimmermann, Randall Freenstra, Patrick Fay, Huili Xing and Alan Seabaugh
    Graphene transistors.
    Topical Workshop on Heterostructure Microelectronics, Nagano, Japan, August 2009.
  11. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    Study of the buffer leakage in the MBE-grown AlN/GaN HEMT structures on GaN template.
    International Conference on Nitride Semiconductors, Korea, October 2009.
  12. Tom Zimmermann, Yu Cao, Debdeep Jena and Huili (Grace) Xing
    Subcritical barrier enhancement-mode AlN/GaN HEMTs.
    International Conference on Nitride Semiconductors, Korea, October 2009.
  13. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization enhanced p-type conductivity in graded N-face AlGaN slabs.
    International Conference on Nitride Semiconductors, Korea, October 2009.
  14. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization enhanced p-type conductivity in graded N-face AlGaN slabs.
    International Symposium of Compound Semiconductors, Santa Barbara, August 2009.
  15. (Invited) Alan Seabaugh, Debdeep Jena, Tian Fang, Patrick Fay, S. Kabeer, Tom Kosel, Y. Lu, S. Koswatta, Kristof Tahy, Tim Vasen, Dane Wheeler, Huili Xing, Q. Zhang. Guangle Zhou, J. - M. Kuo, P. Pinsukanjana, H. Zhu, and Y. -C. Kao
    Low-subthreshold-swing tunnel transistors
    Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2009.
  16. Tom Zimmermann, Yu Cao, Xiangning Luo, Guangle Zhou, Tom Kosel, Debdeep Jena and Huili Xing
    Nanoribbon AlN/GaN HFETs: Toward enhancement mode devices.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  17. Kristof Tahy, Huili Xing and Debdeep Jena
    Discrepancies in calculating mobility in 2D graphene and graphene nanoribbon FETs.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  18. David Shilling, Kristof Tahy, Xiangning Luo, Luxmi, Randall Freenstra, Huili Xing and Debdeep Jena
    High-field characteristics of top-gated epitaxial grapheme field effect transistors.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  19. Tian Fang, Aniruddha Konar, Kristof Tahy, Xiangning Luo, Huili Xing and Debdeep Jena
    Current saturation and high-field transport in graphene.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  20. Amol Singh, Rachel Thompson, Vladimir Protasenko, Ken Kuno, Huili Xing and Debdeep Jena
    Polarization-sensitive two-color detectors and photovoltaic devices by solution-synthesized quantum-wire.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  21. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization enhanced p-type conductivity in graded N-face AlGaN slabs.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  22. Qingling Hang, Yu Cao, Tom Zimmermann, Debdeep Jena and Huili Xing
    Plasma surface cleaning of ultrathin barrier AlN/GaN heterostructures for device fabrication.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  23. Chuanxin Lian and Huili Xing
    The dominant gain limiting mechanism in wafer-fused AlGaAs/GaAs/GaN HBTs.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  24. Yu Cao, Huili Xing and Debdeep Jena
    Low-sheet-resistance multiple AlN/GaN heterojunctions grown by MBE.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  25. Vladimir Protasenko, Kevin Goodman, Huili Grace Xing and Debdeep Jena
    High efficiency green emission from InGaN wires measured in 4K – 300K range.
    Electronic Materials Conference (EMC), Penn State University, June 2009.
  26. Tom Zimmermann, Yu Cao, Jia Guo, Xiangning Luo, Debdeep Jena and Huili Xing
    Top-down AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
  27. Kristof Tahy, David Shilling, Tom Zimmermann, Huili Xing, Patrick Fay, Luxmi, Randall Freenstra and Debdeep Jena
    Gigahertz operation of epitaxial grapheme transistors.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
  28. Kristof Tahy, Siyuiranga Koswatta, Tian Fang, Qin Zhang, Huili Xing and Debdeep Jena
    High field transport properties of 2D and nanoribbon graphene FETs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
  29. (Invited) Huili Grace Xing, Tom Zimmermann, Yu Cao, Debdeep Jena and Ronghua Wang
    Ohmic contacts to AlN/GaN heterostructures.
    WOCSEMMAND, Florida, 2009.

2008:

  1. Huili Grace Xing, Tom Zimmermann, Yu Cao and Debdeep Jena
    Ultrashallow AlN/GaN heterostructures for HEMTs.
    Advanced Heterostructure Workshop, Hawaii, 2008.
  2. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    Current density limits in nitride HEMTs: Phonon model vs. velocity saturation model.
    International Workshop on Nitride Semiconductors (IWN), Montreux, October 2008.
  3. Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena and Huili Grace Xing
    AlN barrier all binary GaN HFETs.
    International Workshop on Nitride Semiconductors (IWN), Montreux, October 2008.
  4. Chuanxin Lian and Huili Grace Xing
    Temperature dependence of current gain in wafer-fused AlGaAs/GaAs/GaN HBTs.
    International Workshop on Nitride Semiconductors, Montreux, October 2008.
  5. Luo, Kristof Tahy, Gregory Snider, Huili Xing and Debdeep Jena
    High field characteristics of 2D graphene FETs.
    IEEE Lester Eastman Conference, Delaware, August 2008.
  6. Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena and Huili Grace Xing
    4 nm-AlN-barrier all binary HFET with SiNx gate dielectric.
    IEEE Lester Eastman Conference, Delaware, August 2008.
  7. Chuanxin Lian and Huili Grace Xing
    Optimization of fusion conditions for wafer-fused AlGaAs/GaAs/GaN HBTs.
    Electronic Materials Conference (EMC), UCSB, June 2008.
  8. Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Xing
    How to contact an ultra-shallow 2DEG-channel underneath a few nanometer thin AlN barrier.
    Electronic Materials Conference (EMC), UCSB, June 2008.
  9. John Simon, Huili Xing and Debdeep Jena
    Ultrathin AlN/GaN superlattice p-n junctions by MBE.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.
  10. Xiangning Luo, YenChun Lee, Anirudda Konar, Tian Fang, Gregory Snider, Huili Xing and Debdeep Jena
    Current-carrying capacity of long and short channel 2D grapheme transistors.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.
  11. Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and Huili Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and ft of ~ 2.6 GHz.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.
  12. Chuanxin Lian and Huili Grace Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain ~ 20 and VBR > 35 V.
    International Conference on Compound Semiconductor Manufacturing Technology, Chicago, April 2008.
  13. Huili Grace Xing, Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Patrick Fay
    Ultrathin AlN/GaN heterostructure based HEMTs.
    International Conference on Compound Semiconductor Manufacturing Technology, Chicago, April 2008.
  14. (Invited) Huili Grace Xing and Chuanxin Lian
    Current status of AlGaAs/GaAs/GaN HBTs by wafer fusion.
    WOCSEMMAND, Palm Spring, CA, 2008.


2007:

  1. Yu Cao, Tom Zimmermann, David Deen, John Simon, Jeff Bean, Ning Su, Jing Zhang, Patrick Fay, Huili Grace Xing and Debdeep Jena
    Ultrashallow MBE-grown AlN/GaN HEMTs with record high current densities.
    International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 2007 –
    Nominated for the Best Student Paper Award.
  2. Chuanxin Lian and Huili Xing
    Characteristics of AlGaAs/GaAs/GaAs-setback/GaN HBTs by wafer fusion.
    MRS Fall Meeting, Boston, MA, USA, Nov. 2007.
  3. Huili Grace Xing, Yu Cao, David Deen, Tom Zimmermann and Debdeep Jena
    MBE grown ultrashallow AlN/GaN HEMT technology.
    212th ECS (The Electrochemical Society) Meeting, Washington DC, Oct. 2007.
  4. Huili Grace Xing and Chuanxin Lian
    AlGaAs/GaAs/GaN heterojunction bipolar transistors formed b wafer fusion.
    International Symposium of Compound Semiconductors (ISCS), Kyoto, Oct. 2007.
  5. Debdeep Jena, Yu Cao, David Deen, Tom Zimmermann and Huili Grace Xing
    Ultrashallow all binary AlN/GaN heterostructures for ultrafast HEMTs.
    International Symposium of Compound Semiconductors (ISCS), Kyoto, Oct. 2007.
  6. Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing
    MBE grown AlInN and AlInN/GaN FETs.
    International Conference of Nitride Semiconductors (ICNS), Las Vegas, Sept. 2007.
  7. David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena and Huili Grace Xing
    Ultra-shallow channel AlN/GaN FETs for future high-speed and high transconductance applications.
    International Conference of Nitride Semiconductors (ICNS), Las Vegas, Sept. 2007.
  8. Chuanxin Lian and Huili Xing
    The role of setback layers in wafer fused AlGaAs/GaAs /GaN HBTs.
    International Conference of Nitride Semiconductors (ICNS), Las Vegas, Sept. 2007.
  9. Chuanxin Lian and Huili Xing
    Comparative study of as-grown AlGaAs/GaAs HBTs and wafer-fused AlGaAs/GaAs /GaN HBTs.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.
  10. Rachel Thompson, Amol Singh, James Puthussery, Aidong Lan, Vladimir Protasenko, Masaru Kuno, Debdeep Jena and Huili Grace Xing
    Solution-liquid-solid synthesized CdS nanowires aligned by dielectrophoresis for polarization-sensitive photodetection.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.
  11. Amol Singh, Masaru Kuno, Huili Xing and Debdeep Jena
    Transport properties and applications of quantum-wire solids.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.
  12. Rachel Thompson, Huili Grace Xing, Gabor Galanti, Vladimir Protasenko, Masaru Kuno, Ronghui Zhou, Chia Chang, Amol Singh and Debdeep Jena
    Tunability of dielectrophoretic mobility of semiconductor nanowires and its implications in device design.
    Materials Research Society (MRS) Spring Meeting, San Francisco, USA April 2007.
  13. Huili Grace Xing, David Deen, C. Yu, J. Simon, Debdeep Jena and Patrick Fay
    Ultra-shallow channel AlN/GaN heterojunction FETs.
    Materials Research Society (MRS) Spring Meeting, San Francisco, USA April 2007.
  14. Debdeep Jena, Amol Singh, Vladimir Protasenko, Huili Xing and Masuro Kuno
    Electron transport properties of solution-synthesized semiconducting quantum-wire solids.
    Materials Research Society (MRS) Spring Meeting, San Francisco, April 2007.
  15. Amol Singh, Debdeep Jena, Vladimir Protasenko, Masuro Kuno and Huili Xing
    Polarization-sensitive photodetectors based on solution-synthesized CdSe and CdTe quantum-wire solids.
    Materials Research Society (MRS) Spring Meeting, San Francisco, April 2007.
  16. Chuanxin Lian and Huili Grace Xing
    AlGaAs/GaAs/GaN HBTs by wafer fusion.
    Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) Savannah, GA, USA Feb 2007.
  17. Debdeep Jena, Yu Cao, David Deen and Huili Xing
    Phonon-engineering in III-V nitride HEMTs.
    Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) Savannah, GA, USA, Feb 2007.

2006:

  1. Huili Grace Xing
    Ultra-shallow channel AlN/GaN HEMTs.
    Advanced Heterojunction Workshop, Hawaii, USA, Dec. 2006.
  2. John Simon, Huili Xing and Debdeep Jena
    Polarization-induced p-doping in N-face graded AlGaN/GaN p-n junctions.
    Materials Research Society (MRS) Fall Meeting, Boston, USA, Nov-Dec 2006.
  3. Chuanxin Lian and Huili Xing
    DC characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs /GaN HBTs by wafer fusion.
    MRS Fall Meeting, Boston, MA, USA, Nov. 2006.
  4. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno, and D. Jena
    Polarization-sensitive photodetectors based on electric-field aligned nanowires.
    Lester Eastman Conference (LEC) 2006, Cornell University, USA, August 2006.
  5. Huili Xing and Chuanxin Lian
    DC characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs /GaN HBTs by wafer fusion.
    Lester Eastman Conference, Ithaca, NY, USA, August 2006.
  6. A. Singh, X. Li, V. Protasenko, M. Kuno, H. Xing and D. Jena
    Transport properties of solution grown thin film nanowire solids.
    48th Electronic Materials Conference, Pennsylvania State University, PA, USA, June 2006.
  7. Huili Xing, X. Li, A. Singh, M. Kuno and D. Jena
    Photocurrent spectroscopy of solution-synthesized nanowire-based photodetectors.
    48th Electronic Materials Conference, Pennsylvania State University, PA, USA, June 2006.
  8. A Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno and D. Jena
    Field-effect transistors and photodetectors based on solution-synthesized nanowires.
    64th Device Research Conference, Pennsylvania State University, PA, USA, June 2006.

2005:

  1. John Simon, Siddharth Rajan, Kejia Wang, Huili Xing and Debdeep Jena
    Polarization-induced 3-dimensional electron slabs in graded AlGaN layers.
    Material Research Society Fall Meeting, Boston, USA, Nov. 2005.
  2. Huili Xing and Chuanxin Lian
    AlGaAs/GaAs/GaN heterojunction bipolar transistors by wafer fusion.
    ONR/MURI (reviews - once every six months since), Santa Barbara, CA, USA, June 2005.
  3. Chuanxin Lian and Huili Xing
    Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy.
    47th Electronic Materials Conference, Santa Barbara, CA, USA, June 2005.
  4. D. Jena, H. Xing, S. Rajan, J. Speck, U. Mishra, A. Link and O. Ambacher
    Polarization-induced electron gases at abrupt and graded III-V nitride heterointerfaces.
    Physics and Chemistry of Surfaces and Interfaces (PCSI-32), Bozeman, January 2005.

2004:

  1. J. Simon, D. Jena, A. Chakraborty, H. Xing and U. K. Mishra
    Non-Polar GaN: p-type doping and Ohmic contact technology.
    46th Electronic Materials Conference (EMC), Notre Dame, June 2004.
  2. H. Xing and U. K. Mishra
    Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs.
    Lester Eastman Conference, Troy, NY, USA, August 2004.

2003:

  1. J. Xing and U. K. Mishra
    Comprehensive characterization of GaN-based bipolar transistors.
    International Conference on Nitride Semiconductors, Nara, Japan, 2003.
  2. H. Xing and U. K. Mishra
    Comprehensive characterization of GaN-based bipolar transistors.
    APS March Meeting, Austin, USA, March 2003.

2002:

  1. H. Xing, P. Chavarkar, D. S. Green, D. Jena, S. Keller, S. P. DenBaars and U. K. Mishra
    High voltage operation (>470 V) of AlGaN/GaN heterojunction bipolar transistors.
    International Workshop on Nitride Semiconductors, Aachen, Germany, July 2002.

2001:

  1. H. Xing, P. Chavarkar, S. Keller, S. P. DenBaars and U. K. Mishra
    High breakdown (>300V) AlGaN/ GaN bipolar transistors.
    28th International Symposium on Compound Semiconductor, Tokyo, Japan, October 2001.
  2. H. Xing, D. S. Green, L. McCarthy, I. P. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. P. DenBaars, O.Speck and U. K. Mishra
    Progress in gallium nitride-based bipolar transistors.
    BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, September 2001.
  3. H. Xing, I. P. Smorchkova, T. Mates, S. Keller, S. P. DenBaars and U. K. Mishra
    Redistribution of Mg into sequentially regrown GaN layers by metalorganic chemical vapor deposition.
    43rd Electronic Material Conference, Notre Dame, IN, USA, June 2001.

2000:

  1. H. Xing, L. McCarthy, S. Keller, S. P. DenBaars and U. K. Mishra
    High current gain GaN homojunction bipolar transistors.
    27th International Symposium on Compound Semiconductor, Monterey, CA, USA, October 2000.