Publications
Patents:
(9):
P-1: Polarization-doped field effect transistors (POLFETs) and materials and methods for
making the same.
US Patent Application No. 11/241,804, filed in 2003.
Debdeep Jena, Siddarth Rajan, Huili Xing and Umesh Mishra
P-2: Polarization-enhanced doping in graded layer wide bandgap devices.
US Patent Application No. 12/967,892, filed in 2009.
John Simon, Huili Xing and Debdeep Jena
P-3: Method for fabrication of low subthreshold swing vertical tunnel field-effect
transistors.
US Patent Application No. 13/206,187, filed in 8/2010.
Alan Seabaugh, Patrick Fay, Huili Xing, Yeqing Lu, Guangle Zhou, Mark Wistey and
Siyuranga Koswatta
P-4: Terahertz wave amplitude modulators.
US Patent Application No. 13/529,934, filed in 6/2011.
Berardi Sensale-Rodriguez, Rusen Yan, Tian Fang, Michelle Kelly, Debdeep Jena, Lei
Liu and Huili (Grace) Xing
P-5: Heterostructure based low-leakage buffer technology for GaN transistors.
Pending, US Patent Application No. 61/283,511, filed in 12/09.
Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
P-6: Threshold voltage control in wide-bandgap transistors by work function engineering.
Pending, US Patent Application No., filed in 2010.
Guowang Li, Yu Cao, Ronghua Wang, Tom Zimmermann, Huili Xing and Debdeep Jena
P-7: Growth interruption technology of obtaining high mobility two-dimensional electron
gases in nitride heterostructures with high Al composition AlGaN barriers.
Pending, US Patent Application No. , filed in 2010.
Guowang Li, Yu Cao, Huili Xing and Debdeep Jena
P-8: Nitride-on-insulator Quantum Well Devices with Regrown Contacts.
Pending, US Patent Application No. , filed in 2012.
Guowang Li, Huili (Grace) Xing and Debdeep Jena
P-9: Complementary Nitride-on-Insulator Field Effect Transistors by Polarizationinduced
doping.
Pending, US Patent Application No. , filed in 2012.
Guowang Li, Huili (Grace) Xing and Debdeep Jena
Books and Monographs (2):
Book chapter: III-V nitride heterojunction bipolar transistors.
Huili (Grace) Xing, Chuanxin Lian* and John Simon**
Advanced semiconductor materials and device research - SiC and III-Nitrides,
Edited by Ho-Young Cha, 2010.
(*Lian, Ph.D student of Xing's; and **Simon, co-advised Ph.D student of Xing's)
Book chapter: Graphene transistors.
Kristof Tahy,** Tian Fang,** Pei Zhao, Aniruddha Konar, Chuanxin Lian, Huili
Xing, Michelle Kelly and Debdeep Jena
Intechweb, 2010.
Journal Articles
(118 total and 94 of which are on research after joining Notre Dame):
2013:
[J-118] Wan Sik Hwang, Maja Remskar, Rusen Yan, Tom Kosel, Jong Kyung Park, Byung Jin
Cho, Wilfried Haensch, Huili Grace Xing, Alan Seabaugh and Debdeep Jena
Comparative study of chemically synthesized and exfoliated multilayer MoS2 field effect
transistors.
Submitted, (2012).
[J-117] Berardi Sensale-Rodriguez, Subrina Rafique, Vladimir Protasenko, Rusen Yan, Mingda
Zhu, Debdeep Jena, Lei Liu and Huili Grace Xing.
THz imaging employing graphene modulator arrays.
Submitted, (2012).
[J-116] Berardi Sensale-Rodriguez, Mingda Zhu, Haijun Zhang, Rusen Yan, Debdeep Jena, Lei
Liu and Huili Grace Xing.
Patterned semiconductor structures for THz and far-infrared plasmonic devices.
Submitted, (2012).
[J-115] Yuanzheng Yue, Zongyang Hu, Yenchun Lee, Berardi Sensale-Rodriguez, Guowang Li,
Faiza Faria, Kazuki Nomoto, Suresh Vishwanath, Michael Schuette, Edward Beam, Andrew
Ketterson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Grace Xing.
Nucleation and conductivity of Pt films by plasma and thermal atomic layer deposition.
Submitted, (2012).
[J-114] Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
Ronghua Wang, Faiza Faria, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory
Snider, Patrick Fay, Debdeep Jena, and Huili Grace Xing.
Ultrascaled InAlN/GaN HEMTs with fT of 400 GHz.
To appear in Japan. J. Appl. Phys., (2013).
[J-113] Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Huili (Grace) Xing, Alan Seabaugh, Kun
Xu, O. A. Kirillov, David J. Gundlach, Curt A. Richter, and N. V. Nguyen
A unique photoemission method to measure semiconductor heterojunction band offsets.
Submitted, (2012).
[J-112] Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan Seabaugh,
Huili Grace Xing, John S. Suehle, Curt A. Richter, David J. Gundlach and N. V. Nguyen
Direct measurement of intrinsic Dirac point of graphene by cavity enhanced internal
photoemission.
Submitted, (2012).
[J-111] Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Jia Guo, Zongyang Hu,
Yuanzheng Yue, Faiza Faria, Michael Schuette, Andrew Ketterson, Edward Beam, Paul
Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
Effect of fringing capacitance on RF performance of gate-recessed E-mode InAlN HEMTs
with fT/fmax of 225/250 GHz.
Submitted, (2012).
[J-110] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly, Amit Verma, Jia
Guo, Thomas Kosel, Huili (Grace) Xing, Debdeep Jena
Polarization-induced GaN-on-Insulator p-channel heterostructure FETs.
Submitted, (2012).
[J-109] Ronghua Wang, Guowang Li, Jia Guo, Faiza Faria, Berardi Sensale-Rodriguez,
Yuanzheng Yue, Zongyang Hu, Vladimir Protasenko, Oleg Laboutin, Yu Cao, Wayne
Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax of
260/220 GHz.
To appear in Appl. Phys. Exp. (2013).
[J-108] Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Debdeep Jena, Lei Liu and Huili
Grace Xing.
Efficient terahertz electro-absorption modulation employing graphene plasmonic structures.
To appear in Appl. Phys. Lett., (2013).
[J-107] Hongyan Shi, Rusen Yan, Simon Bertolazzi, Jacopo Brivio, Bo Gao, Andras Kis,
Debdeep Jena, Huili Grace Xing and Libai Huang.
Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals
Submitted, (2012)
[J-106] Nan Sun, Kristof Tahy, Huili Grace Xing, Debdeep Jena, Gerald Arnold and Steven T.
Ruggiero.
Electrical noise and transport properties of graphene
Submitted, (2012).
[J-105] Ronghua Wang, Guowang Li, Golnaz Karbasian, Jai Verma, Bo Song, Jia Guo,
Yuanzheng Yue, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider,
Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
Quaternary barrier InAlGaN HEMTs with InGaN channel and fT/fmax of 230/300 GHz.
To appear in IEEE Electron Dev. Lett. (2013).
[J-104] Rusen Yan, Tian Fang, Simone Bertolazzi, Jacopo Brivio, Aniruddha Konar, Michelle
Kelly, Debdeep Jena, Andras Kis, and Huili (Grace) Xing
Raman and photoluminescence study of dielectric and thermal effects on atomically thin
MoS2.
Submitted, (2012).
[J-103] Berardi Sensale-Rodriguez, Rusen Yan, Lei Liu, Debdeep Jena, and Huili (Grace) Xing
Graphene reconfigurable THz optoelectronics.
Submitted, (2012).
[J-102] Berardi Sensale-Rodriguez, Lei Liu, Patrick Fay, Debdeep Jena, Lei Liu, and Huili
(Grace) Xing
Power amplification at THz via plasma wave excitation in RTD-gated HEMTs.
To appear in IEEE Trans. THz Sci. Tech. (2013).
[J-101] Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Jai Verma, Guowang Li, Tian
Fang, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Xiang Gao,
Shipping Guo, Patrick Fay, Debdeep Jena, Huili (Grace) Xing
Delay analysis in Enhancement-mode InAlN/AlN/GaN HEMTs with ft/fmax of 191/240 GHz.
To appear in Solid State Electron. (2013).
2012:
[J-100] Rusen Yan, Berardi Sensale-Rodriguez, Lei Liu, Debdeep Jena, and Huili (Grace) Xing
A new class of electrically tunable metamaterial terahertz modulators.
Optical Express, 20(27), pp. 28664-71, (2012).
[J-99] Carsten Pietzka, Guowang Li, M. Alomari, Huili Xing, Debdeep Jena and Erhard Kohn.
Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitancevoltage
measurements.
J. Appl. Phys. 112, 074508 (2012).
[J-98] Golnaz Karbasian, Patrick Fay, Huili (Grace) Xing, Debdeep Jena, Alexei Orlov, and
Gregory Snider
High aspect ratio features in PMGI using electron beam lithography and solvent developers.
J. Vac. Sci. Technol. B, 30, 06FI01(2012).
[J-97] Berardi Sensale-Rodriguez, Patrick Fay, Lei Liu, Debdeep Jena, Lei Liu, and Huili (Grace)
Xing
Enhanced terahertz detection in resonant tunnel diode-gated HEMTs.
ECS Transactions, 49, 93-102(2012).
[J-96] Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Wei Li, Xuelei
Liang, David Gundlach, Vladimir Protasenko, Debdeep Jena, Lei Liu, and Huili (Grace)
Xing
Extraordinary control of terahertz beam reflectance in graphene electro-absorption
modulators.
Nano Letters, 12, 4518 (2012).
[J-95] Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt Richter, Angela R. Hight-
Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, Huili (Grace) Xing, David J.
Gundlach and N. V. Nguyen
Determination of grapheme work function and graphene-insulator-graphene band alignment
by internal photoemission spectroscopy.
Appl. Phys. Lett., 101, 022105, (2012).
[J-94] Faiza Faria, Jia Guo, Pei Zhao, Guowang Li, Prem Kumar Kandaswamy, Mark Wistey,
Huili (Grace) Xing, and Debdeep Jena,
Low resistance ohmic contacts to GaN with high Si doping concentrations grown by
molecular beam epitaxy.
Appl. Phys. Lett., 101, 032109, (2012).
[J-93] Wan-Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo
Doo Chae, Pei Zhao, Aniruddha Konar, Huili (Grace) Xing, Alan C. Seabaugh, and
Debdeep Jena
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 10^5 room
temperature modulation and ambipolar behavior.
Appl. Phys. Lett., 101, 013107, (2012).
[J-92] Wan-Sik Hwang, Kristof Tahy, Xuesong Li, Huili (Grace) Xing, Alan C. Seabaugh, Chun
Yung Sung, and Debdeep Jena
Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition
grown wafer-scale graphene.
Appl. Phys. Lett., 100, 203107, (2012).
[J-91] Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Gregory
Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
InAlN/AlN/GaN HEMTs with regrown ohmics and ft of 370 GHz.
IEEE Electron Dev. Lett., 33(7), 988, (2012).
[J-90] O. Laboutin, Y. Cao, R. Wang, G. Li, D. Jena, H. Xing, C.-F. Lo, L. Liu, S. J. Pearton, F.
Ren, and W. Johnson.
InGaN channel high electron mobility transistor structures grown by metal organic
chemical vapor deposition
Appl. Phys. Lett., 100, 121909, (2012).
[J-89] Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Leg A.
Kirilov, Curt A. Richter, N. V. Nguyen
Tunnel field-effect transistor heterojuction band alignment by internal photoemission
spectroscopy
Appl. Phys. Lett., 100, 102104-7, (2012).
[J-88] Wan-Sik Hwang, K. Tahy, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K.
Gaskill, H. Xing, A.C. Seabaugh and D. Jena
Fabrication of top-gated epitaxial graphene nano-ribbon FETs using hydrogensilsesquioxane
(HSQ).
J. of Vac. Sci. and Technol. B (JVST-B), 30(3), 03D104, 2012.
[J-87] Berardi Sensale-Rodriguez, Rusen Yan, Michelle Kelly, Tian Fang, Kristof Tahy, Wan Sik
Hwang, Debdeep Jena, Lei Liu and Huili (Grace) Xing
Broadband graphene THz modulators enabled by intraband transitions.
Nature Communications, 3, 780, (2012). doi:10.1038/ncomms1787
[J-86] T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena,
Effect of Optical Phonon Scattering on the Performance of GaN Transistors
IEEE Electron Dev. Lett., 33(5), 709-711, (2012).
[J-85] Guowang Li, Ronghua Wang, Jia Guo, Jai Verma, Zongyang Hu, Yuanzheng Yue, Faiza
Faria, Yu Cao, Michelle Kelly, Thomas Kosel, Huili (Grace) Xing, Debdeep Jena
Ultra-thin body GaN-on-insulaor quantum well FETs with regrown ohmic contacts.
IEEE Electron Dev. Lett., 33(5), 661-663, (2012).
[J-84] Y. Lu, Guangle Zhou, Rui Li, Wan Sik Hwang, Qin Zhang, Tim Vasen, Tom Kosel, Mark
Wistey, Huili (Grace) Xing, Alan C. Seabaugh, Patrick Fay
Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned
IEEE Electron Dev. Lett., 33(5), 655-657, (2012).
[J-83] Jia Guo, Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang, Jai Verma, Xiang Gao,
Shipping Guo, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark
Wistey, Debdeep Jena, Huili (Grace) Xing
MBE regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 ohmmm
IEEE Electron Dev. Lett., 33(4), 525-7, (2012).
[J-82] Guangle Zhou, Yeqing Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen,
Chen Chen, H. Zhu, J. Kuo, Tom Kosel, Mark Wistey, Alan Seabaugh, and Huili (Grace)
Xing
InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and 10^6 on/off current
ratio.
IEEE Electron Dev. Lett., 33(6),782, (2012).
[J-81] Rui Li, Guangle Zhou, Qingmin Liu, Soo Doo Chae, Tim Vasen, Wan Sik Hwang, Qin
Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing, Alan Seabaugh
AlGaSb/InAs tunnel field-effect transistor with on-current of 78 uA/um at 0.5V
IEEE Electron Dev. Lett., 33(3), 363-5, (2012).
[J-80] Rui Li, Yeqing Lu, Soo Doo Chae, Guangle Zhou, Qingmin Liu, Chen Chen, M. Shahriar
Rahman, Tim Vasen, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace)
Xing, Siyuranga Koswatta and Alan Seabaugh
InAs/AlGaSb heterojunction tunnel field-effect transistor with tunneling in-line with gate field
Physica Status Solidi (c), 9(2), 389-392, (2012). DOI 10.1002/pssc.201100241.
[J-79] Prasanna Sivasubramani, Tae Joo Park, Bran E. Coss, Antonio Lucero, Jie Huang, Barry
Brennan, Yu Cao, Debdeep Jena, Huili (Grace) Xing, Robert M. Wallace, Jiyoung Kim
In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle
treatments on HF-treated and O3-oxidized GaN substrates
Phys. Status Solidi RRL, 6(1), 22-24, (2012).
2011:
[J-78] O. Laboutin, Y. Cao, R. Wang, G. Li, D. Jena, H. Xing, C.-F. Lo, L. Liu, S. J. Pearton, F.
Ren, and W. Johnson.
The resurgence of III-N materials development: AlInN HEMTs and GaN-on-Si
ECS Transactions, 41(8), 301-311, (2011).
[J-77] Kevin Goodman, Vladimir Protasenko, Jai Verma, Tom Kosel, Grace Xing, Debdeep Jena
Molecular beam epitaxial growth of gallium nitride nanowires on atomic-layer deposited
aluminum oxide.
J. Crystal Growth, 334(1), 113-117, 2011.
[J-76] Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride
heterojunctions
Appl. Phys. Lett., 99, 193504, 2011.
[J-75] Jai Verma, John Simon, Vladamir Protasenko, Tom Kosel, Huili Xing and Debdeep Jena
N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping
Appl. Phys. Lett., 99, 171104, 2011.
[J-74] Berardi Sensale-Rodriguez, Tian Fang, Rusen Yan, Michelle M. Kelly, Debdeep Jena, Lei
Liu, and Huili (Grace) Xing
Unique prospects for graphene-based THz modulators
Appl. Phys. Lett., 99, 113104, (2011).
Most Downloaded of the Month
Special Edition (the 50th Anniversary) of Appl. Phys. Lett. - Editor' Picks, 2012
[J-73] Ronghua Wang, Guowang Li, Jai Verma, Tom Zimmermann, Zongyang Hu, Oleg
Laboutin, Yu Cao, Wayne Johnson, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay,
Debdeep Jena and Huili (Grace) Xing
Si-containing recessed ohmic contacts and 210-GHz quaternary barrier InAlGaN HEMTs
Appl. Phys. Express, 4, 096502, (2011).
Elevated to Open Access, nominated for the Outstanding Paper Award of JSAP 2012
(Japan Society of Applied Physics).
[J-72] Guangle Zhou, Yeqing Lu, Rui Li Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen,
C. Chen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh and Huili
(Grace) Xing
Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate.
IEEE Electronic Device Letters, 32(11), 1516-1518, (2011).
[J-71] Bo Gao, Gregory Hartland, Tian Fang, Michelle Kelly, Debdeep Jena, Huili (Grace) Xing
and Libai Huang
Studies of intrinsic hot phonon dynamics in suspended grapheme by transient absorption
microscope.
Nano Letters, 11(8), 3184-3189, (2011).
[J-70] Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
High field transport and current saturation in 2D graphene.
Phys. Rev. B, 84(12), 125450, (2011).
[J-69] Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Jerry Wayne Johnson, Gregory
Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
220 GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs.
IEEE Electron Dev. Lett., 32(9), 1215-1217, (2011).
[J-68] Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Jerry Wayne Johnson, Gregory
Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
210 GHz InAlN barrier HEMTs with dielectric-free passivation.
IEEE Electron Dev. Lett., 32(7), 892-894, (2011). DOI 10.1109/LED.2011.2147753
[J-67] Lei Liu, Jeffrey L. Hesler, Robert M. Weikle, II, Tao Wang, Patrick Fay and Huili (Grace)
Xing
A 570-630 GHz frequency domain terahertz spectroscopy system based on a broadband
quasi-optical zero bias Schottky diode detector.
International Journal of High Speed Electronics and Systems, 20(3), 629-638, (2011).
[J-66] Berardi Sensale-Rodriguez, Lei Liu, Ronghua Wang, Patrick Fay, Debdeep Jena and Huili
(Grace) Xing.
FET THz detectors operating in the quantum capacitance limited region.
International Journal of High Speed Electronics and Systems, 20(3), 597-609, (2011).
[J-65] Tom Zimmermann, Yu Cao, Guowang Li, Gregory Snider, Debdeep Jena and Huili
(Grace) Xing
Subcritical barrier AlN/GaN E/D-mode HFETs and inverters.
Physica Status Solidi.(a), 208(7), 1620-1622, (2011).
[J-64] Jia Guo, Yu Cao, Chuanxin Lian, Tom Zimmermann, Guowang Li, Jai Verma, Xiang Gao,
Shiping Guo, Mark Wistey, Debdeep Jena and Huili (Grace) Xing
Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts
by molecular beam epitaxy.
Physica Status Solidi (a), 208(7), 1617-1619, (2011).
[J-63] Libai Huang, Bo Gao, Gregory Hartland, Michelle Kelly, Huili Xing
Ultrafast relaxation of hot optical phonons in monolayer and multilayer grapheme on
different substrates.
Journal of Surface Science, 605(17-18), 1657-1661, 2011.
[J-62] Debdeep Jena, John Simon, Kejia Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki
Ganguly, Guowang Li, K. Karda, Vladimir Protasenko, C. Lian, Tom Kosel, Patrick Fay,
and Huili Xing
Polarization engineering in group-III nitride heterostructures: New opportunities for device
design.
Phys. Stat. Solidi., 208(7), 1511-1516, (2011).
[J-61] Kevin Goodman, Vladimir Protasenko, Jai Verma, Thomas H. Kosel, Huili G. Xing and
Debdeep Jena
Green luminescence of InGaN nanowires grown on silicon substrates by MBE.
J. of Appl. Phys., 109(8), 084336, (2011).
[J-60] Yu Cao, Kejia Wang, Guowang Li, Tom Kosel, Huili Xing, and Debdeep Jena
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions.
J. Cryst. Growth, 323(1), 529-533, (2011).
[J-59] Ronghua Wang, Paul Saunier, Yong Tang, Xiang Gao, Shipping Guo, Gregory Snider,
Patrick Fay, Debdeep Jena and Huili (Grace) Xing
Enhancement-mode InAlN/AlN/GaN HEMTs with 10-12 A/mm leakage current and 1012 ON/
OFF current ratio.
IEEE Electron Dev. Lett., 32(3), 309 (2011).
2010:
[J-58] Guowang Li, Yu Cao, Huili Xing, and Debdeep Jena
High mobility two-dimensional electron gases in nitride heterostructures with high Al
composition AlGaN alloy barriers.
Appl. Phys. Lett., 97, 222110 (2010).
[J-57] Yu Cao, Huili Xing, and Debdeep Jena
Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN highelectron
mobility transistors.
Appl. Phys. Lett., 97, 222116 (2010).
[J-56] Ronghua Wang, Paul Saunier, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo,
Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9 A/mm output current
and 800 mS/mm transconductance.
IEEE Electron Dev. Lett., 31(12), 1383, (2010).
[J-55] Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang,
Patrick Fay, Huili (Grace) Xing and Debdeep Jena
Threshold voltage control in Al0.72Ga0.28N/AlN/GaN HEMTs by work function engineering.
IEEE Electron Dev. Lett., 31(9), 954, (2010).
[J-54] Qin Zhang, Yeqing Lu, Huili Grace Xing, Steve J. Koester and Siyuranga O. Koswatta
Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons.
IEEE Electron Dev. Lett., 31(6), 531, (2010).
[J-53] Libai Huang, Gregory Hartland, Li-Qiang Chu, Luxmi, Randall Feenstra, Chuanxin Lian,
Kristof Tahy, and Huili Grace Xing
Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene.
Nano Letter, 10, 1308, (2010).
[J-52] Yu Cao, Tom Zimmermann, Huili Grace Xing and Debdeep Jena
Polarization-engineered removal of buffer leakage for GaN HEMTs.
Appl. Phys. Lett., 96(4), 042102 (2010).
[J-51] Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili Grace Xing and Debdeep
Jena
Quantum transport in graphene nanoribbons patterned by metal etching mask.
Appl. Phys. Lett., 96(10), 103109, (2010).
[J-50] John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
Polarization-induced hole doping in wide-band-gap uniaxial semiconductor
heterostructures.
Science, 327, 60 (2010).
2009:
[J-49] John Simon, Ze Zhang, Kevin Goodman, Huili Xing, Tom Kosel, Patrick Fay and
Debdeep Jena
Polarization induced Zener tunnel junctions in wide-band-gap heterostructures.
Phys. Rev. Lett., 103(2), 026801 (2009).
[J-48] Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena and Huili Grace Xing
4-nm AlN barrier all binary HFET with SiNx gate dielectric.
International Journal of High Speed Electronics and Systems, 19, 153 (2009).
2008:
[J-47] Debdeep Jena, Tian Fang, Qin Zhang and Huili Grace Xing
Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions.
Appl. Phys. Lett., 93(11), 112106 (2008).
[J-46] Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness
scattering.
Physical Review B, 78(20), 205403 (2008).
[J-45] Qin Zhang, Tian Fang, Huili Xing, Alan Seabaugh and Debdeep Jena
Graphene nanoribbon tunnel transistors.
IEEE Electron Dev. Lett., 29(12), 1344 (2008). DOI:10.1109/LED.2008.2005650.
[J-44] Chuanxin Lian, Huili Grace Xing, Yu-Chia Chang and Nick Fichtenbaum
Electrical transport properties of wafer fused p-GaAs/n-GaN heterojunctions.
Appl. Phys. Lett., 91(11), (2008).
[J-43] Yanghai Yu, Vladimir Protasenko, Debdeep Jena, Huili (Grace) Xing and Masaru Kuno
Photocurrent polarization anisotropy of randomly oriented nanowire networks.
Nano Lett., 8(5), 1352-1357 (2008).
[J-42] Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing and Debdeep Jena
Very low sheet resistance and Shubnikov-de-Haas oscillations in two dimensional electron
gases at ultrathin binary AlN/GaN heterojunctions.
Appl. Phys. Lett., 92(15), 152112, (2008).
[J-41] David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena and Huili Xing
2.3nm barrier AlN/GaN HEMTs with insulated gates.
Physica Status Solidi (c), 5(6), 2047 (2008).
[J-40] Tom Zimmermann, David Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena and
Huili Xing
AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm
transconductance.
IEEE Electron Device Lett., 29(7), 661, (2008).
[J-39] Chuanxin Lian, Huili Grace Xing, Yu-Chia Chang and Nick Fichtenbaum
The role of doping type in setback layers on wafer fused AlGaAs/GaAs/GaN HBTs.
Physica Status Solidi (c), 5(9) 2960, (2008).
[J-38] Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing
Formation of ohmic contacts to ultrathin AlN/GaN HEMTs.
Physica Status Solidi (c), 5(6), 2030 (2008).
[J-37] Chuanxin Lian and Huili Grace Xing
The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs.
Physica Status Solidi (c), 5(6), 1989 (2008).
2007:
[J-36] Amol Singh, Xiangyang Li, Vladimir Protasenko, Gabor Galantai, Masaru Kuno, Huili
(Grace) Xing and Debdeep Jena
Polarization sensitive photodetectors based on solution-synthesized semiconductor nanowire
based quantum-wire solids.
Nano. Lett., 7(10), 2999, (2007).
[J-35] Huili Xing, David Deen, Yu Cao, Tom Zimmermann, Patrick Fay and Debdeep Jena
MBE-grown ultra-shallow AlN/GaN HFET technology.
ECS Transactions, Vol. 11(5), 233, (2007).
[J-34] Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
Carrier statistics and quantum capacitance of graphene sheets and ribbons.
Appl. Phys. Lett., 91(9), 092109, (2007).
[J-33] Chuanxin Lian, Huili Grace Xing, Chad S. Wang, David Brown and Lee McCarthy
Gain degradation mechanism in wafer fused AlGaAs/GaAs/GaN heterojunction bipolar
transistors.
Appl. Phys. Lett., 91(6), 063502 (2007).
[J-32] Ronghui Zhou, Hsueh-Chia Chang, Vladimir Protasenko, Masaru Kuno, Amol Kumar
Singh, Debdeep Jena and Huili Xing
CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic
assembly, and field-sensitive emission.
J. of Appl. Phys., 101(7), 073704 (2007).
[J-31] Chuanxin Lian, Huili (Grace) Xing, Chad S. Wang, Lee McCarthy and Dave Brown
DC characteristics of AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion.
IEEE Electron Device Lett., 28(1), 8 (2007).
2006:
[J-30] J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H.
Xing and D. Jena
Hot phonons in Si-doped GaN.
Appl. Phys. Lett., 89(20), 202117 (2006).
[J-29] Johm Simon, Albert Wang, Huili Xing, Debdeep Jena and Siddharth Rajan
Polarization-induced 3-dimensional electron slabs in graded AlGaN layers.
MRS Symposium Proceedings, 0892 (2006).
[J-28] Siddharth Rajan, Steven DenBaars, Umesh K. Mishra, Huili Xing and Debdeep Jena
Electron mobility in graded AlGaN alloys.
Appl. Phys. Lett., 88(4), 042103 (2006).
[J-27] John Simon, Albert (Kejia) Wang, Huili Xing, Siddharth Rajan and Debdeep Jena
Carrier transport and confinement in polarization-induced three-dimensional electron slabs:
Importance of alloy scattering of AlGaN.
Appl. Phys. Lett., 88(4), 042109 (2006).
[J-26] Chuanxin Lian and Huili Grace Xing
Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning
Kelvin probe microscopy.
Appl. Phys. Lett., 88(2), 022112 (2006).
2005:
[J-25] Huili Xing, Steven P. DenBaars and Umesh K. Mishra
Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metalorganic
chemical-vapor deposition and its application to GaN-based bipolar transistors.
J. Appl. Phys. 97(11), 113703 (2005).
2004:
[J-24] Huili (Grace) Xing and Umesh K. Mishra
Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs.
International Journal of High Speed Electronics, 14 (3), 819-824 (2004).
[J-23] D. Buttari, A. Chini, A. Chakraborty, L. McCarthy, H. Xing, T. Palacios, L. Shen, S.
Keller and U.K. Mishra
Selective dry etching of GaN over AlGaN in BCl3/SF6 mixtures.
International Journal of High Speed Electronics, 14(3), 132-137 (2004).
[J-22] L. S McCarthy, N. Q. Zhang, H. Xing, B. Moran, S. DenBaars and U. K. Mishra
High voltage AlGaN/GaN heterojunction transistors.
International Journal of High Speed Electronics and Systems, 14(1), 225-243 (2004).
[J-21] Haijiang Yu, L. McCarthy, H. Xing P. Waltereit, L. Shen, S. Keller, S. P. Denbaars, J. S.
Speck and U. K. Mishra
Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using
pressurized rapid thermal annealing.
Appl. Phys. Lett., 85(22), 5254 (2004).
[J-20] Arpan Chakraborty, H. Xing, M. D. Craven, S. Keller, T. Mates, J. S. Speck, S. P.
DenBaars and U. K. Mishra
Nonpolar a-plane p-type GaN and p-n junction diodes.
J. Appl. Phys., 96(8), 4494-4499 (2004).
[J-19] Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, and Debdeep Jena
AlGaN/GaN polarization-doped field-effect transistor for microwave power applications.
Appl. Phys. Lett., 84(9), 1591-1593 (2004).
[J-18] Huili Xing, Y. Dora, A. Chini, S. Heikman, S. Keller and U.K. Mishra
High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plates.
IEEE Elect. Dev. Lett., 25(4), 161-163 (2004).
2003:
[J-17] D. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, H. Xing, S. Heikman, L. McCarthy,
A. Chakraborty, S. Keller and U. K. Mishra
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures.
Appl. Phys. Lett., 83(23), 4779-4781 (2003).
[J-16] H. Xing, P. Chavarkar, S. Keller, S. P. DenBaars and U. K. Mishra
Very high voltage operation (> 330V) with high current gain of AlGaN/GaN HBTs.
IEEE Electron Device Lett., 24(3), 141-143 (2003).
[J-15] Sarah Estrada, Andrew Huntington, Andreas Stonas, Huili Xing, Umesh Mishra, Steven
DenBaars, Larry Coldren and Evelyn Hu
n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750 C.
Appl. Phys. Lett., 83(3), 560-562 (2003).
[J-14] Sarah Estrada, Huili Xing, Andreas Stonas, Andrew Huntington, Umesh Mishra, Steven
DenBaars, Larry Coldren and Evelyn Hu
Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor.
Appl. Phys. Lett., 82(5), 820-822 (2003).
[J-13] H. Xing, D. Jena, M. J. W Rodwell and U. K. Mishra
Explanation of anomalously high current gain observed in GaN based bipolar transistors.
IEEE Electron Device Lett., 24(1), 4-6 (2003).
[J-12] Huili Xing, Daniel S. Green, Haijiang J. Yu, Tom Mates, Peter Kozodoy, Stacia Keller,
Steven P. DenBaars and Umesh K. Mishra
Memory effect and redistribution of Mg in regrown GaN layers by metalorganic chemical
vapor deposition.
Jpn. J. of Appl. Phys., 42(1), 50-53 (2003).
2002:
[J-11] Debdeep Jena, Sten Heikman, Daniel Green, Dario Buttari, Robert Coffie, Huili Xing,
Stacia Keller, Steven DenBaars, James S. Speck, Umesh K. Mishra and Ioulia Smorchkova
Realization of wide electron slabs by polarization bulk doping in graded III-V nitride
semiconductor alloys.
Appl. Phys. Lett., 81(23), 4395-4397, (2002).
[J-10] Kung-Hsuan Lin, Gia-Wei Chern, Shi-Wei Chu, Chi-Kuang Sun, Huili Xing, Yulia
Smorchkova, Stacia Keller, Umesh Mishra and Steven DenBaars
Ultrashort hole capture time in Mg-doped GaN thin films.
Appl. Phys. Lett., 81(21), 3975-3977 (2002).
[J-9] D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, P. Chavarkar, R. Coffie, N.Q. Zhang, S.
Heikman, L. Shen, H. Xing, C. Zheng and U. K. Mishra
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN
HEMTs.
IEEE Electron Device Lett., 23(3), 118-120 (2002).
2001:
[J-8] H. Xing, S. Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S.
Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars and
U. K. Mishra
Gallium nitride based transistors.
J. Phys., Condens. Matter., 13(32), 7139-7157 (2001).
[J-7] L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J.
W. Rodwell and U. K. Mishra
Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors.
Appl. Phys. Lett., 78(15), 2235-2237 (2001).
[J-6] L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J.
S. Speck, M. J. W. Rodwell, S. P. DenBaars and U. K. Mishra
GaN HBT: toward an RF device,
IEEE Trans. Electron Devices, 48(3), 543-551 (2001).
2000:
[J-5] J. B. Limb, H. Xing, B. Moran, L. McCarthy, S. P. DenBaars and U. K. Mishra
High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage.
Appl. Phys. Lett., 76(17), 2457-2459 (2000).
[J-4] Peter Kozodoy, Huili Xing, Steven P. DenBaars, Umesh K. Mishra, A. Saxler, R. Perrin, S.
Elhamri and W. C. Mitchel
Heavy doping effects in Mg-doped GaN.
J. Appl. Phys., 87(4), 1832-1835 (2000).
1999:
[J-3] Peter Kozodoy, Yulia P. Smorchkova, Monica Hansen, Huili Xing, Steven P. DenBaars
and Umesh K. Mishra
Polarization-enhanced Mg doping of AlGaN/GaN superlattices.
Appl. Phys. Lett., 75(16), 2444-2446 (1999).
[J-2] J. B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S. P.
DenBaars and U. K. Mishra
AlGaN/GaN HBTs using regrown emitter.
Electron. Lett., 35(19), 1671-1673 (1999).
[J-1] L. Zeng, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, H. Xing and G. S Cargill III,
Defect reduction of ZnxCdyMg1-x-ySe based structures grown on InP by using Zn irradiation
of the III-V surface,
J. Vac. Sci. Technol. B, 17(3), 1255 (1999).
Conference papers:
(47 total and 41 of which are on research after joining Notre Dame):
(Underlined personnel: advised at ND; personnel in italic: co-advised at ND)
2012:
[CP-47] Guangle Zhou, Rui Li, Tim Vasen, Meng Qi, SooDoo Chae, Yeqing Lu, Qin Zhang, H.
Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
Novel gate-recessed vertical InAs/GaAs TFETs with record high Ion of 180 uA/um at VDS =
0.5V.
IEEE International Electron Device Meeting (IEDM), San Francisco, December, 2012.
[CP-46] Berardi Sensale-Rodriguez, Yeqing Lu, L. Barboni, F. Silverira, Patrick Fay, Debdeep
Jena, Alan Seabaugh, and Huili Grace Xing
IEEE Subthreshold Microelectronics Conference, Waltham, MA, October 2012.
Perspectives of TFETs for low power analog ICs.
[CP-45] (invited) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Vladimir
Protasenko, Debdeep Jena, Lei Liu, and Huili Grace Xing
IRMMW-THz, Wollongong, Australia, September 2012.
Exceptional tenability of THz reflection in graphene structures.
The Best Student Presentation Award.
[CP-44] Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Michael Schuette, Andrew
Ketterson, Edward Beam, Paul Saunier, Shiping Guo, Xiang Gao. Patrick Fay, Debdeep
Jena, and Huili Grace Xing.
Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz.
Device Research Conference, Penn State University, June 2012.
[CP-43] Guowang Li, Ronghua Wang, Jai Verma, Huili Grace Xing, and Debdeep Jena.
Ultra-thin body GaN-on-Insulator nFETs and pFETs: towards III-nitride complementary
logic.
Device Research Conference, Penn State University, June 2012.
[CP-42] Jai Verma, Prem Kumar, Amit Verma, Vladimir Protasenko, Huili Grace Xing, and
Debdeep Jena
Tunnel injection GaN/AlN quantum dot UV LED.
Device Research Conference, Penn State University, June 2012.
[CP-41] Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo
Doo Chae, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
First demonstration of two-dimensional WS2 transistors exhibiting 10^5 room temperature
modulation and ambipolar bahavior.
Device Research Conference, Penn State Univeristy, June 2012.
[CP-40] (Invited) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-
Quen Tserng, Shiping Guo, Xiang Gao. Patrick Fay, Grace Xing, Paul Saunier.
State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
The Government Microcircuit Applications and Critical Technology Conference
(GOMACTech), 2012.
2011:
[CP-39] Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Oleg A. Kirillov,
Curt A. Richter, Nhan V. Nguyen
Band alignment of TFET heterojunctions and post deposition annealing effects by internal
photoemission spectroscopy.
ISDRS 2011, University of Maryland, College Park, MD, December 7-9, 2011.
[CP-38] Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Guowang Li, Tian Fang, Paul
Saunier, Andrew Ketterson, Michael Schuette, Xiang Gao, Shiping Guo, Yu Cao, Oleg
Laboutin, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace)
Xing
Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz
ISDRS 2011, University of Maryland, College Park, MD, December 7-9, 2011.
[CP-37] Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep
Jena
Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs.
Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
[CP-36] Ronghua Wang, Guowang Li, Tian Fang, Oleg Laboutin, Yu Cao, J. W. Johnson, Greg
Snider, Patrick Fay, Debdeep Jena, Huili Xing
Improvement of fT in InAl(Ga)N Barrier HEMTs by Plasma Treatments.
Device Research Conference, University of California, Santa Barbara, CA, June 20 2011.
[CP-35] Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim
Vasen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh,
Huili (Grace) Xing
Self-aligned InAs/Al0.45 Ga0.55 Sb vertical tunnel FETs.
Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
[CP-34] Tian Fang, Ronghua Wang, Guowang Li, Huili Xing, S. Rajan, Debdeep Jena
Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors.
Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.
[CP-33] (Invited) Paul Saunier, Andrew Ketterson, Michael Schuette, Tso-Min Chou, Jose
Jimenez, Hua-Quen Tserng, Grace Xing, Shiping Guo, Xiang Gao.
State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
The Government Microcircuit Applications and Critical Technology Conference
(GOMACTech), Orlando, 2011.
[CP-32] (Invited) Debdeep Jena, Kristof Tahy, Tian Fang, Pei Zhao, Wan Sik Hwang, Michelle
Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, Rui Li, Huili Xing
and Alan Seabaugh
Graphene transistors for digital applications.
The Government Microcircuit Applications and Critical Technology Conference
(GOMACTech), Orlando, 2011.
[CP-31] Guangle Zhou, Yeqing Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim
Vasen, C. Chen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh,
and Huili (Grace) Xing
Self-aligned In0.53 Ga0.47 As/InAs/InP vertical tunnel transistors.
International Conference on Compound Semiconductor Manufacturing Technology
(CSManTech), Palm Springs, April 2011.
2010:
[CP-30] Yong Tang, Paul Saunier, Ronghua Wang, Andrew Ketterson, Xiang Gao, Shiping Guo,
Gregory Snider, Debdeep Jena, Huili (Grace) Xing and Patrick Fay
High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixedsignal
applications.
IEEE International Electron Device Meeting, San Francisco, 2010.
[CP-29] (Invited) Debdeep Jena, Kristof Tahy, David Shilling, Qin Zhang, Tom Zimmermann,
Patrick Fay, Huili Xing, Alan Seabaugh, Luxmi, Randall Feenstra, Siyuranga Koswatta.
Graphene transistors.
The Government Microcircuit Applications and Critical Technology Conference
(GOMACTech), 2010.
[CP-28] (Invited) L. Liu, T. Wang, A. Biswas, Z. Cai, F. Watanabe, A. S. Biris, M. Lieberman,
H. Xing and P. Fay
Narrow spectral features of cellulose nanocomposites characterized by a frequency domain
terahertz spectroscopy.
ICCE, 2010.
[CP-27] L. Liu, B. Sensale-Rodriguez, Z. Zhang, T. Zimmermann, Y. Cao, D. Jena, P. Fay and H.
Xing
Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility
transistors.
The 21st International Symposium on Space Terahertz Technology, Oxford, March 2010.
[CP-26] Ronghua Wang, Xiu Xing, Tian Fang, Tom Zimmermann, Chuanxin Lian, Guowang Li,
Paul Saunier, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and
Huili (Grace) Xing
High performance E-mode InAlN/GaN HEMTs: interface states from subthreshold slopes.
The 68th Device Research Conference, Notre Dame, June 2010.
[CP-25] Q. Zhang, Y. Lu, G. H. Xing, C. A. Richter, S. J. Koester and S. O. Koswatta
Device characteristics of single-layer graphene FETs grown on copper.
The 68th Device Research Conference, Notre Dame, June 2010.
[CP-24] Kristof Tahy, Margaret Jane Fleming, Barbara Raynal, Vladimir Protasenko, Siyuranga
Koswatta, Debdeep Jena, Huili (Grace) Xing and Michelle Kelly
Device characteristics of single-layer graphene FETs grown on copper.
The 68th Device Research Conference, Notre Dame, June 2010.
[CP-23] Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang,
Patrick Fay, Huili Xing and Debdeep Jena
Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs.
The 68th Device Research Conference, Notre Dame, June 2010.
[CP-22] Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep
Jena and Huili Xing
Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors.
International Conference on Compound Semiconductor Manufacturing Technology
(Portland), April 2010.
2009:
[CP-21] Jia Guo, Tom Zimmermann, Debdeep Jena and Huili (Grace) Xing
Ultra-scaled AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-20] Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-19] Guangle Zhou, Sajid Kabeer, Dana Wheeler, Patrick Fay, Alan Seabaugh and Huili
(Grace) Xing
Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-18] Dana Wheeler, Sajid Kabeer, Yeqing Lu, Tim Vasen, Qin Zhang, Guangle Zhou, Kevin
Clark, Haijun Zhu, Yung-Chung Kao, Patrick Fay, Tom Kosel, Huili Xing and Alan
Seabaugh.
Fabrication approach for lateral InGaAs tunnel transistors.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-17] Sajid Kabeer, Tim Vasen, Dana Wheeler, Qin Zhang, Siyuranga Koswatta, Haijun Zhu,
Kevin Clark, Jenn-Ming Kuo, Yung-Chung Kao, Sean Corcoran, Brian Doyle, Patrick Fay,
Tom Kosel, Huili Xing and Alan Seabaugh
Effect of dopant profile on current-voltage characteristics of p+n+ In0.53GaAs tunnel
junctions.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-16] Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili (Grace) Xing and Debdeep
Jena
Quantum transport in patterned graphene nanoribbons.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-15] Kristof Tahy, Chuanxin Lian, Huili (Grace) Xing and Debdeep Jena
Operation regimes of double gated graphene nanoribbon FETs.
International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.
[CP-14] Tom Zimmermann, Yu Cao, Jia Guo, Xiangning Luo, Debdeep Jena and Huili Xing
Top-down AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
Conference digest of 67th Device Research Conference, Penn State University, June 2009.
[CP-13] Kristof Tahy, David Shilling, Tom Zimmermann, Huili Xing, Patrick Fay, Luxmi,
Randall Freenstra and Debdeep Jena
Gigahertz operation of epitaxial graphene transistors.
Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
[CP-12] Kristof Tahy, Siyuranga Koswatta, Tian Fang, Qin Zhang, Huili Xing and Debdeep Jena
High field transport properties of 2D and nanoribbon Graphene FETs.
Conference Digest of 67th Device Research Conference, Penn State University, June 2009.
2008:
[CP-11] John Simon, Huili Xing and Debdeep Jena
Ultrathin AlN/GaN superlattice p-n junctions by MBE.
Conference Digest of 66th Device Research Conference, UCSB, June 2008.
[CP-10] Xiangning Luo, YenChun Lee, Anirudda Konar, Tian Fang, Gregory Snider, Huili Xing
and Debdeep Jena
Current-carrying capacity of long & short channel 2D graphene transistors.
Conference Digest of 66th Device Research Conference, UCSB, June 2008.
[CP-9] Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and Huili Xing
Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and ft of ~ 2.6 GHz.
Conference Digest of 66th Device Research Conference, UCSB, June 2008.
[CP-8] Chuanxin Lian and Huili Grace Xing
Wafer fused AlGaAs/GaAs/GaN HBTs with current gain ~ 20 and VBR > 35 V.
International Conference on Compound Semiconductor Manufacturing Technology, Chicago,
(April 2008).
[CP-7] (Invited) Huili Xing, Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Patrick
Fay
Ultrathin AlN/GaN heterostructure based HEMTs.
International Conference on Compound Semiconductor Manufacturing Technology (CS
ManTech), Chicago, (April 2008).
2007:
[CP-6] Yu Cao, Tom Zimmermann, Huili (Grace) Xing and Debdeep Jena
Ultrashallow MBE-grown AlN/GaN HEMTs with record high current densities.
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., (Dec.
2007) Nominated for the Best Student Paper Award.
2006:
[CP-5] A. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno and D. Jena
Field-effect transistors and photodetectors based on solution-synthesized nanowires.
Conference Digest of 64th Device Research Conference, Penn Sate University, June 2006.
2002:
[CP-4] D. Scott, H. Xing, S. Krishnan, M. Urgeaga, N. Parthasarathy and M. Rodwell
InAlAs/InGaAs/InP DHBTs with polycrystalline InAs extrinsic emitter regrowth.
60th Device Research Conference, Santa Barbara, CA, USA, June 2002.
2001:
[CP-3] (Invited) H. Xing, D. S. Green, L. McCarthy, I. P. Smorchkova, P. Chavarkar, T. Mates,
S. Keller, S. P. DenBaars, J. Speck and U. K. Mishra
Progress in gallium nitride-based bipolar transistors.
BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, September
2001.
2000:
[CP-2] L. McCarthy, Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars and
U. Mishra
HBT on LEO GaN.
Conference Digest of 58th Device Research Conference, Denver, CO, USA, June 2000.
[CP-1] H. Xing, L. McCarthy, S. Keller, S. P. DenBaars and U. K. Mishra
High current gain GaN homojunction bipolar transistors.
27th Int. Symp. on Compound Semi., Monterey, CA, USA, October 2000.
Invited Talks
[I-38] Physics and Chemistry of Surfaces and Interfaces (PCSI), Hawaii, January 2013.
Graphene THz devices: role of surfaces and interfaces.
[I-37] The 3rd International Workshop on Terahertz Nanoscience (TeraNano 3), Hawaii,
December 2012.
Graphene and semiconductor plasmonics for THz technologies
[I-36] American Vacuum Society (AVS) annual meeting, Tampa, FL, October 2012.
Surfaces and interfaces in vertical tunnel FETs.
[I-35]IWN (International Workshop on Nitride Semiconductors), Hokkaido, October, 2012.
High speed GaN transistors.
[I-34]Tohoku University, Japan, October 2012.
[I-33] [KEYNOTE] ESREF (European Symposium on Reliability of Electron Devices, Failure
Physics and Analysis), Cagliari, Italy, October 2012.
Ultra-scaled GaN HEMTs and their reliability challenges.
[I-32] IRMMW-THz, Wollongong, Australia, September 2012.
Exceptional tunability of THz reflection in graphene structures.
[I-31]University of Western Australia, Perth, September 2012.
[I-30]University of Minnesota, Minneapolis, September 2012.
[I-29]Kopin, Massachusetts, August 2012.
[I-28]NIST, Gaithersburg, June 2012.
[I-27]Purdue University, May 2012.
[I-26]North Carolina State University, May 2012.
[I-25]University of California, Santa Barbara, April 2012.
[I-24]HRL (Huges Research Laboratory), April 2012.GaN, graphene and tunnel transistor
[I-23]Fudan University, Shanghai, March 2012.GaN: The 3rd electronic revolution?
[I-22]CSTIC,(China Semiconductor Technology International Conference), Shanghai, March
2012.
GaN: The 3rd electronic revolution?
[I-21]CSTIC (China Semiconductor Technology International Conference), Shanghai, March
2012.
Tunnel field-effect transistors for low voltage electronics.
[I-20] Nippon Telegraph and Telephone Corporation (NTT), R&D center, Atsugi, Japan, 2011
GaN HEMT, TFETs and graphene THz modulators.
[I-19] The 9th Topical Workshop on Heterostructure Microelectronics (TWHM), Japan, Aug.
2011
GaN HEMTs with ultra-thin AlN barriers.
[I-18] ECS annual meeting, Boston, October, 2011
GaN transistors for power management.
[I-17] The Swiss Federal Institute of Technology Zurich (ETH Zurich), June, 2011
GaN: the 3rd electronic revolution?
[I-16] University of Michigan, May, 2011
GaN transistors.
[I-15] Indian Institute of Technology, Madras, December 2010
GaN transistors.
[I-14] Ohio State University, March, 2010
AlN/GaN HEMTs.
[I-13] The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD),
New Delhi, India, December, 2009
Top-down AlN/GaN nanoribbon HFETs.
[I-12] Asia-Pacific Workshop on Widegap Semiconductors (APWS), ZhangJiaJie, China, May
2009
AlN/GaN based HEMTs.
[I-11] Advanced Heterostructure Workshop, Hawaii, 2008
Ultrashallow AlN/GaN heterostructures for HEMTs.
[I-10] International Conference on Compound Semiconductor Manufacturing Technology (CS
ManTech), Chicago, April, 2008
Ultrathin AlN/GaN heterostructure based HEMTs.
[I-9] Argonne National Laboratory, April, 2008
Prospects of graphene based electronics.
[I-8] ECS annual meeting, Washington DC, October, 2007
MBE grown ultrashallow AlN/GaN HEMT technology.
[I-7] Advanced Heterostructure Workshop, Hawaii, 2006
Ultrashallow AlN/GaN heterostructures for HEMTs.
[I-6] GE Global Research Center, Schenectady, NY, 2006
The development of GaN-based bipolar transistors.
[I-5] Naval Research Laboratory, Washington DC, 2004
AlGaN/GaN heterojunction bipolar transistors.
[I-4] University of New Mexico, Albuquerque, New Mexico, 2004
GaN-based bipolar transistors.
[I-3] Compound Semiconductor (CS) Outlook, Dallas, Texas, 2003
The growth of III-V nitrides and its effects on devices.
[I-2] BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, Sept.
2001
Progress in gallium nitride-based bipolar transistors.
[I-1] Nippon Telegraph and Telephone Corporation (NTT), R&D center, Atsugi, Japan, 2001
AlGaN/GaN heterojunction bipolar transistors with regrown emitter.
Conference Presentations
(180 total till Dec. 2012 and 172 of which are on research after
joining Notre Dame)
Starting from Year 2013, no more conference presentations will be recorded. But my group
attends and presents regularly in international conferences and workshops as evidenced
by the past records, including IEDM, DRC, EMC, IWN, ISCS etc. For example, in
2012 we contributed 35 conference presentations, as listed below.
2012:
[C-180] Guangle Zhou, Rui Li, Tim Vasen, Meng Qi, SooDoo Chae, Yeqing Lu, Qin Zhang, H.
Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
Novel gate-recessed vertical InAs/GaAs TFETs with record high Ion of 180 uA/um at VDS =
0.5V.
IEEE International Electron Device Meeting (IEDM), San Francisco, December, 2012.
[C-179] Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James Basham, Xuelei Liang, Debdeep
Jena, Curt A. Richter, Alan Seabaugh, David J. Gundlach, Huili G. Xing and N. V. Nguyen.
Graphene as an electrode for directly observing hole injection from silicon to oxide.
Semiconductor Interface Specialist Conference, San Diego, Dec. 2012.
[C-178] Qin Zhang, Rusen Yan, Oleg A. Kirillov, Kun Xu, Curt A. Richter, Thomas Kosel, Huili
G. Xing, Alan Seabaugh, Curt A. Richter, David J. Gundlach and N. V. Nguyen.
Band offsets of Al2O3 on an InAs/AlGaSb heterojunction measured by internal
photoemission.
Semiconductor Interface Specialist Conference, San Diego, Dec. 2012.
[C-177] [Invited, keynote] Huili (Grace) Xing, Debdeep Jena
Ultra-scaled GaN HEMTs and their reliability challenges.
ESREF (European Symposium on Reliability of Electron Devices, Failure Physics and
Analysis), Cagliari, Italy, October 2012.
[C-176] Berardi Sensale-Rodriguez, Yeqing Lu, L. Barboni, F. Silverira, Patrick Fay, Debdeep
Jena, Alan Seabaugh, and Huili Grace Xing
IEEE Subthreshold Microelectronics Conference, Waltham, MA, October 2012.
Perspectives of TFETs for low power analog ICs.
[C-175] (Invited) Huili (Grace) Xing, Debdeep Jena
High speed GaN transistors.
IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
[C-174] Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili (Grace) Xing and Debdeep
Jena
Reverse leakage in InAlN/AlN/GaN HEMTs: role of built-in polarization field.
IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
[C-173] Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
Ronghua Wang, Faiza Faria, Bo Song, Xiang Gao, Shipping Guo, Thomas Kosel, Gregory
Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
Ultrascaled InAlN/GaN HEMTs with ft of 400 GHz.
IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
[C-172] Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Yuanzheng Yue, Zongyang
Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena
and Huili (Grace) Xing
Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz.
IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
Best Paper Award
[C-171] (Invited) Huili (Grace) Xing, Guangle Zhou, Soo Doo Chae, Y. Lu, Rui Li, Tim Vasen,
Q. Zhang, J.-M. Kuo, H. Zhu, Patrick Fay, Tom Kosel, Alan Seabaugh, Mark Wistey
Surfaces and interfaces in vertical tunnel FETs,"
AVS annual meeting, Tampa FL, October 2012.
[C-170] (invited) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Vladimir
Protasenko, Debdeep Jena, Lei Liu, and Huili Grace Xing
IRMMW-THz, Wollongong, Australia, September 2012.
Exceptional tenability of THz reflection in graphene structures.
Best Student Presentation Award
[C-169] Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace
Xing, and Debdeep Jena
GaN/AlN quantum dot UV LEDs utilizing tunnel transport by plasma-assisted molecular
beam epitaxy.
The 17th International Conference on MBEs, Nara, Japan, September 2012.
[C-168] Berardi Sensale-Rodriguez, Patrick Fay, Lei Liu, Debdeep Jena, and Huili Grace Xing
Enhanced terahertz detection in resonant tunnel diode-gated HEMTs.
The 27th Symposium on Microelectronics Technology and Devices, Brasilia, Brazil, August
2012.
[C-167] Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt Richard, Angela R. Hight-
Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, and Huili Grace Xing, David
Gundlach, and Nhan Van Nguyen
Investigation of graphene-oxide-semiconductor band alignment by internal photoemission
spectroscopy.
International Symposium on Compound Semiconductors, UCSB, August 2012.
[C-166] Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Subrina Rafique, Suresh
Vishwanath, Wan Sik Hwang, Kristof Tahy, Vladimir Protasenko, Michelle Kelly, Lei Liu,
Debdeep Jena, and Huili Grace Xing
THz reconfigurable optoelectronic devices employing graphene.
International Symposium on Compound Semiconductors, UCSB, August 2012.
[C-165] Wan Sik Hwang, Pei Zhao, Kristof Tahy, Xuesong Li, Chun-Yung Sung, Huili Grace
Xing, Alan C. Seabaugh, and Debdeep Jena
Ultrathin grapheme nanoribbon transistors on wafer-scale chemical-vapor-deposited
graphene.
International Symposium on Compound Semiconductors, UCSB, August 2012.
[C-164] Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace
Xing, and Debdeep Jena
GaN/AlN quantum dot UV LEDs utilizing tunnel transport by plasma-assisted molecular
beam epitaxy.
International Symposium on Semiconductor LEDs, Berlin, Germany, July 2012.
[C-163] Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Michelle Kelly, Lei Liu,
Debdeep Jena, and Huili Grace Xing
Active THz metamaterials based on self-gated 2DEGs.
Lester Eastman Conference, Brown University, August 2012.
[C-162] Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Edward Beam, Michael Schuette,
Andrew Ketterson, Paul Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, and
Huili Grace Xing
Gate-recessed E-mode InAlN/AlN/GaN HEMTs with ft/fmax of 225/250 GHz.
Lester Eastman Conference, Brown University, August 2012.
[C-161] Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Gregory
Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
InAlN/AlN/GaN HEMTs with regrown ohmics and ft of 370 GHz.
Electronic Materials Conference, Penn State University, June 2012.
[C-160] Vladimir Protasenko, Jai Verma, Huili Grace Xing, and Debdeep Jena
Excitonic and free carrier recombination in high indium content InGaN layers grown by
MBE for photovoltaics.
Electronic Materials Conference, Penn State University, June 2012.
[C-159] Faiza Faria, Jia Guo, Pei Zhao, Guowang Li, Prem Kandaswamy, Huili Grace Xing, and
Debdeep Jena
Study on alloyed ohmic contacts to MBE grown n+GaN with various Si doping
concentrations.
Electronic Materials Conference, Penn State University, June 2012.
[C-158] Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Michael Schuette, Andrew
Ketterson, Edward Beam, Paul Saunier, Shiping Guo, Xiang Gao. Patrick Fay, Debdeep
Jena, and Huili Grace Xing.
Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz.
Device Research Conference, Penn State University, June 2012.
[C-157] Guowang Li, Ronghua Wang, Jai Verma, Huili Grace Xing, and Debdeep Jena.
Ultra-thin body GaN-on-Insulator nFETs and pFETs: towards III-nitride complementary
logic.
Device Research Conference, Penn State University, June 2012.
[C-156] Jai Verma, Prem Kumar, Amit Verma, Vladimir Protasenko, Huili Grace Xing, and
Debdeep Jena
Tunnel injection GaN/AlN quantum dot UV LED.
Device Research Conference, Penn State University, June 2012.
[C-155] Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo
Doo Chae, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
First demonstration of two-dimensional WS2 transistors exhibiting 10^5 room temperature
modulation and ambipolar bahavior.
Device Research Conference, Penn State University, June 2012.
[C-154] (invited) Wan Sik Hwang, Kristof Tahy, Pei Zhao, R. Myers-Ward, P. Campbell, C.
Eddy Jr., K. Gaskill, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
Wafer-scale grapheme nanoribbon transistor technology.
The 221st ECS Meeting, Seattle, May 2012.
[C-153] Syed M. Rahman, Yi Xie, Zhenguo Jiang, Huili Xing, Patrick Fay and Lei Liu
The development of terahertz focal-plane array elements using Sb-based heterostructure
backward diode.
The 23rd International Symposium on Space Terahertz Technology, Tokyo, April 2012.
[C-152] Nan Sun, Gerald Arnold, Kristof Tahy, Jianchun Zeng, Huili Xing, Debdeep Jena and
Steven Ruggiero
Low-frequency noise in graphene FETs
APS Marching Meeting, March 2012
[C-151] Golnaz Karbasian, Alexei O. Orlov, Patrick J. Fay, Huili Xing, Debdeep Jena and
Gregory L. Snider
High aspect ratio features in PMGI using electron beam lithography and solvent developers
International Conference on electron, ion and photon beam technology and nanofabrication
[C-150] (Invited) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-
Quen Tserng, Shiping Guo, Xiang Gao. Patrick Fay, Grace Xing, Paul Saunier.
State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
The Government Microcircuit Applications and Critical Technology Conference
(GOMACTech), 2012.
[C-149] (Invited) Huili (Grace) Xing
GaN: The 3rd electronic revolution?
CSTIC,(China Semiconductor Technology International Conference), Shanghai, March
2012.
[C-148] (Invited) Huili (Grace) Xing, Alan Seabaugh
Tunnel field-effect transistors for low voltage electronics.
CSTIC (China Semiconductor Technology International Conference), Shanghai, March
2012.
[C-147] (Invited) Huili (Grace) Xing
Graphene THz modulators.
WOCSEMMAND (Workshop on Compound Seminconductor Materials and Devices),
Nappa Valley, February 2012.
[C-146] Wan-Sik Hwang, K. Tahy, P. Zhao, R.L. Myers-Ward, P.M. Campbell, C.R. Eddy, Jr.,
D. K. Gaskill, H. Xing, A.C. Seabaugh and D. Jena
Wafer-scale graphene nanoribbons for tunnel FET applications.
The 19th Korean Conference on Semiconductors (KCS), Korea, February 2012.
