University of Notre Dame College of Engineering

research

Our current group research can be loosely grouped into three areas: GaN electronics, tunnel FETs, THz technologies. The semiconductors we work closely with include GaN, convential III-Vs, Si, graphene and other 2D crystals with a non-zero bandgap.

1. Representative publications on GaN electronics

* Publications resulted from the DARPA-NEXT project: pdf

* Dr. Xing, invited talk at IWN 2012, Powerpoint Presentation: Can GaN HEMTs reach 1 THz? pdf

* Dr. Xing, invited talk at TWHM 2011 Abstract: pdf Powerpoint Presentation: pdf

* Jia Guo et al., the problem of ohmic contacts to GaN HEMTs has been solved using ohmic regrowth: pdf

* Yuanzheng Yue et al., record ft of GaN HEMTs: pdf

* Ronghua Wang et al., record ft/fmax of InAlGaN HEMTs: pdf

* Ronghua et al. ohmic contact alloying can lead to dispersion: pdf

2. Representative publications on tunnel FETs

* Guangle Zhou et al., Type-I band aligned III-V TFETs demonstrated (EDL): pdf

* Guangle Zhou et al., Type-II band aligned III-V TFETs deomstrated (DRC 2011): pdf

* Guangle Zhou et al., Type-III band aligned III-V TFETs demonstrated (IEDM 2012): pdf

3. THz Technologies

* Berardi Sensale-Rodriguez et al., first graphene THz modulator demonstrated: pdf

* Berardi Sensale-Rodriguez et al., RTD-gated plasma wave THz amplifiers proposed: pdf

* Rusen Yan et al., novel THz modulators proposed: pdf

 

Current Projects

  • National Science Foundation (NSF)
    "CAREER: Graphene and graphene nanoribbon optoelectronic properties and devices"
  • Defense Advanced Research Projects Agency (DARPA)
    "Ultrafast RF and mixed-signal electronics with ultra-scaled binary AlN/GaN HEMTs"
  • National Science Foundation (NSF)
    "A room temperature portable terahertz camera using zero bias Sb-based heterostructure backward diodes for imaging applications"
  • Defense Advanced Research Projects Agency (DARPA)
    "Microscale power conversion (MPC)"
  • Office of Naval Research (ONR)
    "MURI: GaN device and architecture for terahertz electronics (DATE)"
  • National Science Foundation (NSF)
    Graphene-based electrically reconfigurable THz aperture arrays for imaging applications
  • Air Force Office of Scientific Research (AFOSR)
    2D crystal semiconductors: new materials for GHz-THz devices
  • National Science Fundation (NSF)
    2D crystal semiconductors: electron transport and device applications
  • Semiconductor Research Corporation (SRC)
    LEAST Center

Past Projects

  • Nanoelectronic Research Initiative (NRI)
    "MIND: Midwest Institute of Nanoelectronics Discovery"
  • National Science Foundation (NSF)
    "CAREER: Graphene and graphene nanoribbon optoelectronic properties and devices"
  • Office of Naval Research (ONR)
    "THz power sources based on negative differential resistance in GaN"
  • National Science Foundation (NSF)
    "Nanoscale optoelectronics with polarization and bandgap engineered nitride nanowire/silicon heterostructures"
  • Defense Advanced Research Projects Agency (DARPA)
    "AlGaN MQW Mid UV LEDs over sapphire and bulk AlN"
  • National Science Foundation (NSF)
    "MRI: Acquisition of Ultrafast Spectroscopy Instrumentation for Material Research and Education"
  • Office of Naval Research (ONR)
    "Polarization-doped GaN HBTs"
  • Office of Naval Research/Defense Advanced Research Projects Agency (ONR/DARPA)
    "Ideal channel field effect transistors"
  • National Science Foundation (NSF)
    "Evaluation of nanoribbons for lateral bandgap engineering"
  • Office of Naval Research (ONR)
    "Engineering of oxide/nitride semiconductors (EONS)"
  • Air Force Office of Scientific Research (AFOSR)
    "YIP: Quantum limits of AlN/GaN RF HEMTs"
  • Air Force Office of Scientific Research (AFOSR)
    "Stacked quantum wire AlN/GaN HEMTs"
  • Office of Naval Research (ONR)
    "Nitride/oxide multifunction materials: bridging the gap between materials and devices"
  • University of Notre Dame (Faculty Research Program)
    "Graphene nanoribbon-based FETs and gated RTTs for integrated high-speed RF devices and circuits"
  • Air Force Office of Scientific Research (AFOSR)
    "DURIP: Transport characterization system for electronic, optical & multifunctional materials and devices"
  • Office of Naval Research/Defense Advanced Research Projects Agency (ONR/DARPA)
    "Ultrascaled AlN/GaN HEMT technology for mm-wave applications"
  • Office of Naval Research (ONR)
    "AlGaAs/GaAs/GaN HBTs by wafer fusions"
  • Nanoelectronic Research Initiative (NRI)
    "MIND: Midwest Institute of Nanoelectronics Discovery (Phase 1.0)
  • National Science Foundation (NSF)
    "Evaluation of nanoribbons for lateral badgap engineering"
  • Office of Naval Research (ONR)
    "Engineering of oxide/nitride semiconductors (EONS)
  • Inlustra Technologies, Inc.
    "Characterization of non-polar bulk GaN substrates (DoD STTR)"
  • Air Force Office of Scientific Research (AFOSR)
    "Stacked quantum wire AlN/GaN HEMTs"
  • Air Force Office of Scientific Research (AFOSR)
    "YIP: Quantum limits of AlN/GaN RF HEMTs"
  • Defense Advanced Research Projects Agency (DARPA)
    "AlGaN MQW Mid UV LEDs over sapphire and bulk AlN"

Collaborators:

Paul Bohn, University of Notre Dame, Department of Chemical and Biomolecular Engineering

Hsueh-Chia Chang, University of Notre Dame, Department of Chemical and Biomolecular Engineering

Patrick Fay, University of Notre Dame, Department of Electrical Engineering

Debdeep Jena, University of Notre Dame, Department of Electrical Engineering

Michelle Kelly, University of Notre Dame, Department of Electrical Engineering

Marya Lieberman, University of Notre Dame, Department of Chemistry & Biochemistry

Lei Liu, University of Notre Dame, Department of Electrical Engineering

Alan Seabaugh, University of Notre Dame, Department of Electrical Engineering

Greg Snider, University of Notre Dame, Department of Electrical Engineering

Mark Wistey, University of Notre Dame, Department of Electrical Engineering