Selected publications are listed below, with links to online abstracts as available. A complete listing of Dr. Seabaugh's publications is on his CV.

2013 | 2012 | 2011

2010 | 2009 | 2008 | 2007| 2006| 2005 | 2004 | 2003 | 2002| 2001

2000 | 1999 | 1998 | 1997| 1996| 1995 | 1994 | 1993 | 1992| 1991

1990 | 1989 | 1988 | 1986 | 1984 | 1983 | 1980| 1979 | Theses | Patents

 

Google Scholar publications

Web of Science publications

 

2013

Journal

A. Seabaugh, “The tunneling transistor,” IEEE Spectrum, vol. 50, pp. 35–62 (2013).

W. S. Hwang, A. Seabaugh, D. Jena, et al. “High-voltage field effect transistors with wide-bandgap β-Ga2O3, Nanomembranes, http://arxiv.org/abs/1310.6824, submitted (2013).

W. S. Hwang, K. Tahy, P. Zhao, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena “Transport properties of top-gated epi-graphene nanoribbon field-effect transistors on SiC wafer,” accepted J. Vac. Sci. Technol. B (2013).

H. Lu, J. W. Kim, D. Esseni, and A. Seabaugh,, “Continuous semiemperical model for current-voltage characteristics of tunnel FETs,” submitted IEEE Trans. Electron Dev., November 2013.

W. S. Hwang, P. Zhao, K. Tahy, L. Nyakiti, V. Wheeler, R. Myers-Ward, C. Eddy, K. Gaskill, J. Robinson, W. Haensch, H. Xing, A. Seabaugh, and D. Jena, “Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates,” submitted Phys. Rev. X, 2013.

Q. Zhang, Y. Lu, C. A. Richter, D. Jena, and A. Seabaugh, “Optimum band gap and supply voltage in tunnel FETs,” submitted IEEE Trans. Electron Dev., July 2013.

W. S. Hwang, M. Remskar, R. Yan, T. Kosel, J. K. Park, B. J. Cho, W. Haensch, H. G. Xing, A. Seabaugh, and D. Jena, “Comparative study of chemically synthesized and exfoliated multilayer MoS2 field effect transistors,” Appl. Phys. Lett. 102, 043116 (2013).

Q. Zhang, R. Li, R. Yan, T. Kosel, H. G. Xing, A. Seabaugh, K. Xu, O. A. Kirillov, D. J. Gundlach, C. A. Richter, and N. V. Nguyen, “A unique photoemission method to measure semiconductor heterojunction band offsets,” Appl. Phys. Lett. 102, 012101 (2013).

K. Xu, C. Zeng, Q. Zhang, R. Yan, P. Ye, K. Wang, A. Seabaugh, H. Xing, J. Suehle, C. Richter, D. Gundlach, and N. Nguyen, “Direct measurement of Dirac point energy at the graphene/oxide interface,” Nano Lett. 13, 131-136 (2013).

R. Yan, Q. Zhang, O. Kirillov, W. Li, J. Basham, A. Boosalis, X. Liang, D. Jena, C. Richter, A. Seabaugh, D. Gundlach, H. Xing, and N. Nguyen, “Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide,” Appl. Phys. Lett. 102, 123106 (2013).

Conference

W. Wang, C. Gong, W. Wang, S. Fullerton, A. Seabaugh, and K. Cho, “First principles study on crown ether and crown ether-Li complex interactions with graphene,” 2014 Mat. Res. Soc. Meeting submitted 1 November 2013.

H. G. Xing, G. Zhou, M. Li, Y. Lu, R. Li, M. Wistey, P. Fay, D. Jena, and A. Seabaugh, “Tunnel FETs with tunneling normal to the gate,” 2013 Berkeley Symp. Energy Efficient Electronic Systems (E3S), pp. 1–1.

P. Fay, Y. Lu, G. Zhou, Y. Xie, M. I. B. Shams, Z. Zhang, H. Xing, and A. Seabaugh, “Interband tunneling in InAs/AlGaSb heterostructures: devices for low-power logic and THz applications,” 2013 Int. Semicond. Dev. Res. Symp. (ISDRS), pp.

P. Zhao, W. S., Hwang, E. S Kim, R. Feenstra, G. Gu, J. Kang, K. Banerjee, A. Seabaugh, G. Xing, and D. Jena, “Novel logic devices based on 2D crystal semiconductors: opportunities and challenges,” 2013 Int. Electron Dev. Meeting, pp.

W. S. Hwang, P. Zhao, S. Rouvimov, H. Xing, A. Seabaugh, W. Haensch, and D. Jena, “Field-effect transistors based on two dimensional crystal materials,” 2013 Energy Materials Nanotechnology (EMN), Technical Digest, Orlando, April 8-11.

W. S. Hwang, A. Verma, V. Protasenko, S. Rouvimov, H. G. Xing, A. Seabaugh, W. Haensch, C. Van de Walle, Z. Galazka, M. Albrecht, R. Forrnari, and D. Jena, “Nanomembrane β-Ga2O3 high-voltage field effect transistors,” 2013 Dev. Res. Conf. (DRC), pp. 207–208.

S. Fathipour, W. S. Hwang, T. Kosel, H. G. Xing, W. Haensch, D. Jena, and A. Seabaugh, “Exfoliated MoTe2 field-effect transistor,” 2013 Dev. Res. Conf. (DRC), pp. 115–116.

P. Fay, G. Zhou, Y. Lu, R. Li, T. Vasen, A. Seabaugh, and H. Xing, “III-V tunnel FETs for energy efficient logic,” Workshop on Compound Semiconductor Devices and Integrated Circuits – Europe, Warnemunde, Germany, May 2013.

A. Seabaugh, “Benchmarking low-voltage steep devices, circuits, and systems,” invited, SRC Nanoelectronics Research Initiative Benchmarking Workshop, Rockville, MD, 23 October 2013.

A. Seabaugh, “The best tunnel diode and tunnel transistor circuits,” invited, TxACE Analog Symp., University of Texas at Dallas, Richardson, TX, 21 October 2013.

A. Seabaugh, “Low-voltage, steep-subthreshold, beyond-CMOS technology,” invited, IEEE SOI-3D-Subthres-hold Microelectronics Technology Unified Conf., Monterey, CA, 8 October 2013.

A. Seabaugh, “Steep subthreshold swing transistors," invited, Yonsei University, 6 September 2013.

A. Seabaugh, “Steep subthreshold swing transistors," invited, SKKU Graphene Center, 6 September 2013.

A. Seabaugh, “III-V tunnel field-effect transistors and beyond,” invited, Samsung Electronics, Seoul, Korea, 5 September 2013.

A. Seabaugh, “Recent progress in III-V tunnel FETs,” invited, Topical Workshop on Heterostructure Microelectronics, Hakodate, Japan, 2 September 2013.

A. Seabaugh, “DARPA/SRC Center for Low Energy Systems Technology," invited, University of Californias, Berkeley NSF Center for Energy Efficient Electronics Science Seminar, 11 July 2013.

A. Seabaugh, “The transistor has changed the world. What next?” invited, Dev. Res. Conf. rump session, Notre Dame, 25 June 2013.

A. Seabaugh, “Steep subthreshold swing transistors,” invited, Int. Symp. on Extremely Low Voltage VLSI Devices and Circuits, Kyoto, Japan, 15 June 2013.

A. Seabaugh, “Beyond CMOS transistors,” invited, TechConnect World, National Harbour, Maryland, 14 May, 2013.

A. Seabaugh, “Steep subthreshold swing transistors for low voltage computing,” invited, 2013 SEMINATEC, May 3, University of Campinas, Campinas, Brazil.

A. Seabaugh, “Steep subthreshold swing transistors,” invited, University of California, Los Angeles, 2 April 2013, UCLA, California.

 

2012

Journal

K. Karda, S. Sutar, J. Nahas, J. Brockman, and A. Seabaugh, “Bistable-body tunnel SRAM,” IEEE Trans. Nanotechnology 11, 1067-1071 (2012).

Q. Liu, L. Dong, Y. Liu, R. Gordon, P. D. Ye, P. Fay, and A. Seabaugh, “Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors,” Solid-State Electronics 76, 1-4 (2012).

N. S. Do, D. Schaetzl, B. Dey, A. Seabaugh, and S. Fullerton-Shirey, “Influence of Fe2O3 nanofiller shape on the conductivity and thermal properties of solid polymer electrolytes: Nanorods versus nanospheres,” J. Phys. Chem. C, 116, 21216 (2012).

W. S. Hwang, K. Tahy, P. Zhao, S. D. Chae, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy Jr., D. Kurt Gaskill, H. Xing, A. Seabaugh, and D. Jena, “Top-gated epi-graphene nanoribbon field-effect transistors with 10 A/mm current density,” submitted, IEEE Electron Dev. Lett.

R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. Richter, A. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. Xing, D. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett., 101, 022105 (2012).

W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett., 101, 013107 (2012).

W. S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena, “Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene,” Appl. Phys. Lett., 100, 203107 (2012).

Y. Lu, G. Zhou, R. Li, Q. Liu, Q. Zhang, T. Vasen, S. D. Chae, T. Kosel, M. Wistey, H. Xing, A. Seabaugh, and P. Fay, “Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned,” IEEE Electron Device Lett., 33, 5, pp. 655-57 (2012).

Q. Zhang, G. Zhou, H. Xing, A. Seabaugh, K. Xu, S. Hong, O. Kirillov, C. Richter, and N. Nguyen, “Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett., 100, 102104 (2012).

W. S. Hwang, K. Tahy, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Fabrication of top-gated epitaxial graphene nano-ribbon FETs using hydrogen-silsesquioxane,” J. Vac. Sci. Technol. B 30, 03D104 (2012).

G. Zhou, Y. Lu, R. Li, Q. Zhang, Q. Liu, T. Vasen, H. Zhu, J.-M. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and ION/IOFF ratio near 106,” IEEE Electron Dev. Lett., 33, 6, pp. 782-84, 2012.

R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, and A. Seabaugh, “AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V,” IEEE Electron Dev. Lett., 33, pp. 363-365 (2012).

R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, S. Koswatta, and A. Seabaugh, “InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field,” Physica Status Solidi C, 9, no. 2, 389-392 (2012).

Conference

P. Fay, Y. Lu, H. Xing, and A. Seabaugh, “Design considerations in III-V tunnel FETs,” Workshop Comp. Semiconductor Materials and Devices, Napa, CA, 2012.

R. Yan, Q. Zhang, O. A. Kirillov, W. Li, J. Basham, X. Liang, D. Jena, C. A. Richter, A. Seabaugh, D. J. Gundlach, H. Xing, and N. V. Nguyen, “Graphene as an electrode for directly observing hole injection from silicon to oxide,” 2012 IEEE Semicon. Interface Specialists Conf. (SISC), San Diego.

Q Zhang, R. Li, T. Kosel, H. Xing, A. Seabaugh, K. Xu, O. A. Kirillov, C. A. Richter, D. J. Gundlach, and N. V. Nguyen, “Band offsets of Al2O3 on InAs/AlGaSb heterojunction measured by internal photoemission,” 2012 IEEE Semicon. Interface Specialists Conf. (SISC), San Diego, CA.

W. S. Hwang, P. Zhao, K. Tahy, J. Verma, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, J. A. Robinson, H. Xing, A. Seabaugh, and D. Jena, “Wafer-scale graphene nanoribbon field-effect transistors with record on-current of 10 mA/µm on SiC,” submitted, International Electron Devices Meeting, Dec. 2012, San Francisco, CA.

G. Zhou, R. Li, T. Vasen, M. Qi, S. Chae, Y. Lu, Q. Zhang, H. Zhu, J.-M. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 µA/µm at VDS=0.5 V,” International Electron Devices Meeting, Dec. 2012, San Francisco, CA.

B. Sensale-Rodriguez, Y. Lu, L. Barboni, F. Silveira, P. Fay, D. Jena, A. Seabaugh, and H. Xing, “Perspectives of TFETs for low power analog ICs,” 2012 IEEE Subthreshold Microelectronics Conf. (SubVT), Waltham, MA.

A. Seabaugh, “Fundamentals and current status of steep-slope tunnel field-effect transistors,” 2011 Proc. European Dev. Res. Conf. (ESSCIRC), pp. 59-60 and 2011 Proc. European Solid-State Circuits Research Conf. (ESSDERC), pp. 34-35.

Z. Jiang, Y. Lu, Y. Tan, Y. He, M. Povoloskyi, T. Kubis, G. Klimeck, A. Seabaugh, and P. Fay, “Atomistic simulation of GaSb/InAs tunneling field effect transistor,” TECHCON, Sept. 2012, Austin, TX.

R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. Richter, A. Hight-Walker, X. Liang, A. Seabaugh, H. Xing, D. Gundlach, and N. Nguyen, “Investigation of graphene-oxide-semiconductor band alignment by internal photoemission spectroscopy,” 2012 Int. Symp. on Comp. Semicon. (ISCS), Santa Barbara.

W. S. Hwang, P. Zhao, K. Tahy, X. Li, C.-Y. Sung, H. Xing, A. Seabaugh, and D. Jena, “Ultrathin graphene nanoribbon transistors on wafer-scale chemical-vapor-deposited graphene,” poster, 39th International Symposium on Compound Semiconductors (ISCS), August 2012, Santa Barbara, CA.

W. S. Hwang, K. Tahy, P. Zhao, S. D. Chae, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena, “Top-gated epigraphene nanoribbon field-effect transistors withoutput current of 10 mA/µm,” 39th International Symposium on Compound Semiconductors (ISCS), August 2012, Santa Barbara, CA.

W. S. Hwang, P. Zhao, K. Tahy, J. Verma, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, J. A. Robinson, H. Xing, A. Seabaugh, and D. Jena, “Transport properties of graphene nanoribbon FETs on wafer-size epitaxial graphene on SiC,” poster, International Conference on the Physics of Semiconductors (ICPS), Late News, July 2012, Zurich, Switzerland.

Q. Zhang, Y. Lu, C. A. Richter, D. Jena, and A. Seabaugh, “Analytic determination of the optimum bandgap for a tunnel FET,” Dev. Res. Conf. Late News, June 2012, State College, PA.

W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, H. Xing, A. Seabaugh, and D. Jena, “First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior,” Dev. Res. Conf., June 2012, University Park, PA.

D. Jena, W. S. Hwang, K. Tahy, P. Zhao, R. Myers-Ward, P. Campbell, C. Eddy, Jr., D. Gaskill, H. Xing, and A. Seabaugh, “Wafer-scale graphene nanoribbon transistor technology,” 221st ECS Meeting, May 2012, Seattle, WA.

T. Vasen, G. Zhou, R. Li, Y. Lu, S. D. Chae, M. Qi, Q. Liu, Q. Zhang, T. Kosel, M. Wistey, H. Xing, P. Fay, and A. Seabaugh, “AlGaSb/InAs tunnel field-effect transistors,” poster, 8th International Nanotechnology Conference on Communication and Cooperation (INC8), May 2012, Tsukuba, Japan.

W. S. Hwang, K. Tahy, P. Zhao, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Wafer-scale graphene nanoribbons for tunnel FET applications,” 19th Korean Conference on Semiconductors, Feb. 2012, Seoul, Korea.

A. Seabaugh, “Nanoelectronics Devices and Circuits,” Pontificia Universidad Católica de Chile (PUC), 11 October 2012, Santiago, Chile.

A. Seabaugh, “Tunnel field-effect transistor perspective,” invited, Int. Symp. on Comp. Semicon. (ISCS), 18 August 2012, Santa Barbara, CA.

A. Seabaugh, “Low-voltage tunnel transistors: Benchmarking and circuits,” invited, Int. Conf. on IC Design and Technology (ICICDT), 30 May 2012, Austin, TX.

A. Seabaugh, “Post CMOS devices and architectures,” invited, 2012 Gov. Microcircuits Applications and Critical Technology Conf. (GOMAC), Las Vegas, NV.

A. Seabaugh, S. Chae, P. Fay, T. Kosel, R. Li, Y. Lu, M. Qi, T. Vasen, M. Wistey, H. Xing, Q. Zhang, and G. Zhou, “Comp. semiconductor tunnel transistors,” invited, NNIN Symp. on Frontiers in Nanoscale Transistors and Electronics, 6 February 2012, Santa Barbara, CA.

A. Seabaugh, “Tunnel field-effect transistors,” invited, Intel, Hillsboro, OR, 3 February 2012.

 

2011

Journal

G. Zhou, Y. Lu, R. Li, Q. Zhang, W. S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate,” IEEE Electron Dev. Lett. 32, pp. 1516-1518 (2011).

Conference

Q. Zhang, G. Zhou, H. Xing, A. Seabaugh, K. Xu, O. Kirillov, C. Richter, and N. Nguyen, “Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy,” International Semiconductor Device Research Symposium (ISDRS), Dec. 2011, College Park, MD.

A. Seabaugh, “Tunnel field-effect transistor - Engineering a better switch,” short course, Int. Electron Dev. Meeting, December 4, 2011, Washington, DC.

A. Seabaugh, “Fulfilling digital logic requirements by tunnel transistors,” invited, 2nd Berkeley Symposium on Energy Efficient Electronic Systems, Nov. 3, 2011, Berkeley, CA.

S. D. Chae, G. Zhou, I. Kwihangana, R. Li, Y. Lu, Q. Liu, T. Vasen, Q. Zhang, W.-S. Hwang, P. Fay, T. Kosel, M. Wistey, H. Xing, and A. Seabaugh, “Characterization of interface traps in metal-highk-InAs/GaSb TFETs,” IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2011, Arlington, VA.

A. Seabaugh, S. D. Chae, P. Fay, W. S. Hwang, T. Kosel, R. Li, Q. Liu, Y. Lu, T. Vasen, M. Wistey, H. Xing, G. Zhou, Q. Zhang, and R. Wallace, “Interface traps and low subthreshold swing in III-V tunnel FETs,” invited, AVS 58th Annual International Symposium and Exhibition, October 30, 2011, Nashville, TN.

A. Seabaugh, S. D. Chae, P. Fay, W. S. Hwang, T. Kosel, R. Li, Q. Liu, Y. Lu, T. Vasen, M. Wistey, H. Xing, G. Zhou, and Q. Zhang, “III-V tunnel field-effect transistors,” invited, 220th ECS Meeting and Electrochemical Energy Summit, October 9, 2011, Boston, MA.

S. Fullerton-Shirey, B. Dey, and A. Seabaugh, “Improving conductivity in solid polymer electrolytes using oxide nanorods,” 220th ECS Meeting and Electrochemical Energy Summit, Oct. 2011, Boston, MA.

A. Seabaugh, “Fundamentals and current status of steep-slope tunnel field-effect transistors,” invited, 41st European Solid-State Device Research Conference (ESSDERC), September 2011, Helsinki, Finland.

K. Tahy, W. S. Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Large scale fabrication of sub-10 nm graphene nanoribbon field effect transistors,” SRC TECHCON, Sept. 2011, Austin, TX.

T. Vasen, Q. Liu, M. S. Rahman, G. Zhou, Y. Lu, R. Li, C. Chen, Q. Zhang, N. Goel, C. Park, J.-M. Kuo, H. Zhu, S. Koswatta, D. Wheeler, P. Fay, H. Xing, T. Kosel, M. Wistey, and A. Seabaugh, “Lateral In0.53Ga0.47As tunneling field-effect transistor with regrown, self-aligned tunnel junction by molecular beam epitaxy,” SRC TECHCON, Sept. 2011, Austin, TX.

G. Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs,” Device Research Conf., pp. 205-206, June 2011, Santa Barbara, CA.

K. Tahy, W. S. Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. eddy, D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena, “Sub-10 nm epitaxial graphne nanoribbon FETs,” Device Research Conf., pp. 39-40, June 2011, Santa Barbara, CA.

G. Zhou, Y. Lu, R. Li, W. Hwang, Q. Zhang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing,, “Passivation effects of ALD oxides on self-aligned In0.53Ga0.47As/InAs/InP vertical tunnel FETs,” Electronic Materials Conf., June 2011, Santa Barbara, CA.

W. S. Hwang, K. Tahy, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Fabrication of top-gated sub-10 nm epitaxial graphene nanoribbon FETs using hydrogen silsesquioxane (HSQ),” Electronic Mat. Conf., June 2011, Santa Barbara, CA.

A. Seabaugh, “Recent progress in the development of III-V and graphene tunnel field-effect transistors,” invited, 7th International Nanotechnology Conference on Communication and Cooperation, May 16, 2011, Albany, NY.

R. Li, Y. Lu, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, S. Koswatta, and A. Seabaugh, “InAs/AlGaSb heterojunction tunnel FET with InAs airbridge drain,” International Symposium on Compound Semiconductors (ISCS2011), pp. 189-190, May 2011, Berlin, Germany.

G. Zhou, Y. Lu, R. Li, Q. Liu, P. Pinsukanjana, G. Wang, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing, “Self-aligned In0.53Ga0.47As/InP vertical tunnel FET,” CS ManTech, May 2011, Palm Springs, CA.

K. Tahy, W. S. Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Control of the unintentional doping in epitaxial graphene FETs,” Graphene 2011, April 2011, Bilbao, Spain.

D. Jena, K. Tahy, T. Fang, P. Zhao, W. S. Hwang, M. Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, R. Li, H. Xing, and A. Seabaugh, “Graphene transistors for digital applications,” The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), March 2011, Orlando, FL.

A. Seabaugh, “III-V tunnel transistors,” invited, Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD), February 21-23, 2011, Savannah, GA.

2010

Journal

M. Remskar, Ales Mrzel, M. Virsek, M. Godec, A. Singh, and A. Seabaugh, “The MoS2 nanotubes with defect-controlled electric properties,” Nanoscale Research Lett. 1-7 (2010).

A. Seabaugh and Q. Zhang, “Low voltage tunnel transistors for beyond-CMOS logic,” Proc. IEEE 98, 2095-2110 (2010).

K. Bernstein, R. Cavin, W. Porod, A. Seabaugh, and J. Welser, ”Device and architecture outlook for beyond CMOS switches,” Proc. IEEE 98, 2169-2184 (2010).

K. Karda, S. Sutar, J. Nahas, J. Brockman, and A. Seabaugh, “Bistable-body tunnel SRAM,” IEEE Trans. Nanotechnology (2010).

S. Sutar, Q. Zhang, and A. Seabaugh, “InAlAs/InGaAs interband tunnel diodes for SRAM,” IEEE Trans. Electron Dev. 57, 2587-2593 (2010).

Conference

A. Seabaugh, “Tunnel FET gate-stack characterization,” Int. Symp. Adv. Gate Stack Technology, invited, Troy, NY, October 1, 2010.

A. Seabaugh, “Narrow bandgap tunnel field-effect transistors for logic,” Proc. Int. Comp. Semicond. Symp. 2010, June 4, Takamatsu, Japan.

D. Jena, K. Tahy, D. Shilling, Q. Zhang, T. Zimmermann, P. Fay, H. Xing, A. Seabaugh, R. Feenstra, and S. Koswatta, “Graphene Transistors,” GOMAC (2010) pp. 1-4.

A. Seabaugh, “Tunnel field-effect transistors – status and prospects,” invited, 2010 Dev. Res. Conf. Dig. 2010, pp. 11-14, June 22, Notre Dame.

Y. Lu, A. Seabaugh, P. Fay, S. J. Koester, S. E. Laux, W. Haensch, and S. O. Koswatta, “Geometry dependent tunnel FET performance – dilemma of electrostatics vs. quantum confinement,” Dev. Res. Conf. 2010, pp. 17-18.

Y. Lu, A. Seabaugh, H. Xing, T. Kosel, S. Koswatta, H. Zhu, K. Clark, P. Pinsukanjana, J.-M. Kuo, Y.-C. Kao, and P. Fay, “Effect of Al composition on current-voltage characteristics of AlGaSb/InAs tunnel junction,” EMC 2010.

G. Zhou, H. Zhu, P. Pinsukanjana, T. Kosel, P. Fay, M. Wistey, A. Seabaugh, and H. Xing, “Regrown InGaAs tunnel junctions for TFETs,” EMC 2010.

A. Seabaugh, “Emerging energy-efficient device technologies vs. ultimate CMOS,” invited, University Governent Industry Micro-Nano Symp, UGIM 2010, June 29, West Lafayette, IN.

2009

Journal

D. Wheeler, L.-E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K.-J. Weststrate, A. Sonnet, E. M. Vogel, A. Seabaugh, “Deposition of HfO2 on InAs by atomic-layer deposition,” Microelec. Eng. 86, 1561-1563 (2009).

Q. Zhang, S. Sutar, T. Kosel, and A. Seabaugh, “Fully-depleted Ge interband tunnel transistor: modeling and junction formation,” Solid-State Electronics 53, 30-35 (2009).

Conference

D. Jena, K. Tahy, A. Konar, T. Fang, Q. Zhang, S. Koswatta, H. Xing, and A. Seabaugh, “Graphene based transistors,” 18th European Workshop on Heterostructure Technology (HETECH), November 2009.

D. Jena, K. Tahy, A. Konar, T. Fang, Q. Zhang, S. Koswatta, H. Xing, and A. Seabaugh, “Graphene electronics,” 8th Topical Workshop on Heterostructure Microelectronics (TWHM), August 2009.

A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J.-M. Kuo, P. Pinsukanjana, H. Zhu, and Y.-C. Kao, “Low-subthreshold-swing tunnel transistors,” Proc. Si Nanoelectronics Workshop 2009.

S. Kabeer, T. Vasen, D. Wheeler, Q. Zhang, S. Koswatta, H. Zhu, K. P. Clark, J. Kuo, Y.-C. Kao, S. Corcoran, B. Doyle, P. Fay, T. Kosel, H. Xing, and A. Seabaugh, “Effect of dopant profile on the current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions,” Int. Semicon. Dev. Res. Symp. (2009).

D. Wheeler, D. Kabeer, Y. Lu, T. Vasen, Q. Zhang, G. Zhou, K. P. Clark, H. Zhu, P. Fay, T. Kosel, H. Xing, and A. Seabaugh, “Fabrication approach for lateral InGaAs tunnel transistors,” Int. Semicon. Dev. Res. Symp. (2009).

G. Zhou, S. Kabeer, D. Wheeler, A. Seabaugh, and H. Xing, “Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs,” Int. Semicon. Dev. Res. Symp. (2009).

K. Karda, S. Sutar, J. Nahas, J. Brockman, and A. Seabaugh, “One-transistor bistable-body tunnel SRAM,” Proc. 2009 IEEE Int. Conf. Integrated Circ. Des. Technol.” May 18-20, Austin, TX, pp. 233-236.

D. Wheeler, L.-E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K.-J. Weststrate, A. Sonnet, E. M. Vogel, A. Seabaugh, “Deposition of HfO2 on InAs by atomic-layer deposition,” INFOS 2009, June 29 – July 1, 2009, Cambridge, UK.

A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J.-M. Kuo, P. Pinsukanjana, H. Zhu, and Y.-C. Kao, “Low-subthreshold-swing tunnel transistors,” Proc. Si Nanoelectronics Workshop 2009, Kyoto, June 13-14, 2009.

2008

Journal

Q. Zhang, T. Fang, H. Xing, A. Seabaugh, and D. Jena, “Graphene nanoribbon tunnel transistors,” IEEE Electron Dev. Lett. 29, 1344-1346 (2008).

S. Jha, X. Song, S. E. Babcock, T. F. Kuech, D. Wheeler, B. Wu, P. Fay, and A. Seabaugh, “Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy,” J. Crys. Gr. 310, 4772-4775 (2008).

Conference

D. Wheeler, T. Kosel, A. Seabaugh, L. Fröberg, A. Mikkelsen, C. Thelander, K.-J. Weststrate, and L.-E. Wernersson, “High-κ-InAs MOS capacitors formed by atomic-layer deposition,” D. Wheeler, and T. Kosel, SRC TECHCON 2008, Nov. 3, 2008, Austin, TX.

Q. Zhang and A. Seabaugh, “Can the interband tunnel FET outperform Si CMOS?” 2008 Device Research Conf. Tech. Dig., pp. 73-74.

S. Sutar, Q. Zhang, and A. Seabaugh, “Structural sensitivity of interband tunnel diodes for SRAM,” 2008 Device Research Conf. Tech. Dig., pp. 65-66.

S. L. Rommel, D. Pawlik, P. Thomas, M. Barth, K. Johnson, S. K. Kurinec, A. Seabaugh, Z. Cheng, J. Z. Li, J. S. Park, J. M. Hydrick, J. Bai, M. Carroll, J. G. Fiorenza, and A. Lochtefeld, “Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping, ” Int. Electron Dev. Meeting, pp. 1-4, Dec. 2008.

2007

Journal

I. Yoon, C. Yi, T. Kim, A. S. Brown, A. Seabaugh, “Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO2 substrates,” J. Vac. Sci. & Technol. B (Microelectronics and Nanometer Structures) 25, p. 945-947 (2007).

M. Remskar, J. Kovac, M. Virsek, M. Mrak, A. Jesih, and A. Seabaugh, “W5O14 nanowires,” Advanced Functional Materials, 17, 1974-1978 (2007).

Z. Racz and A. C. Seabaugh, “Characterization and control of unconfined lateral diffusion under stencil masks,” J. Vac. Sci. Technol. B, 25, 857-861 (2007).

J. Zhao, A. C. Seabaugh, and T. H. Kosel, “Rapid melt growth of germanium tunnel junctions,” J. Electrochem. Soc. 154, H536-539 (2007).

Conference

D. Wheeler, A. Seabaugh, L. Fröberg, C. Thelander, L.-E. Wernersson, “Electrical properties of HfO2/InAs MOS capacitors,” Int. Semicon. Dev. Res. Symp., 2007, p. 391-2, University of Maryland.

B. Wu, D. Wheeler, C. Yi, I. Yoon, S. Jha, A. Brown, T. Kuech, P. Fay, A. Seabaugh, “InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs,” Int. Semicon. Dev. Res. Symp., 2007, p. 371-2, University of Maryland.

Q. Zhang S. Sutar, T. Kosel, and A. Seabaugh, “Rapid melt growth of Ge tunnel junctions for interband tunnel transistors,” Int. Semicon. Dev. Res. Symp., 2007, p. 485-6, University of Maryland.

D. Wheeler, B. Wu, P. Fay, A. Seabaugh, C. Yi, I. Yoon, A. Brown, and T. Kuech, “InAs-on-Silicon-on-insulator (SOI) Composite-Channel MOSFETs,” Semiconductor Research Corporation (SRC) Techcon 2007, September 10-12, 2007, Austin, Texas. 

P. Caroff, M. Jeppsson, D. Wheeler, M. Keplinger, B. Mandl, J. Stangl, A. Seabaugh, G. Bauer, and L.-E. Wernersson, “InAs film grown on Si(111) by metalorganic vapor phase epitaxy,” Int. Conf. Nano Sci. and Technol. (ICN+T 2007), Stockholm, Sweden.

A. Seabaugh, “Tunneling-based nanoelectronics for power reduction,” 7th Topical Workshop on Heterostructure Microelectronics, Kazusa Arc (Kazusa Akademia Center), Kisarazu, Chiba, Japan, August 21–24, 2007.

2006

Journal

Q. Zhang, W. Zhao, and A. Seabaugh, “Low subthreshold tunnel swing transistors,” IEEE Electron Dev. Lett. 27, 297-300 (2006).

W. Zhao, A. Seabaugh, B. Winstead, D. Jovanovich, and V. Adams, “Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators,” IEEE Electron Dev. Lett. 27, 52-54 (2006).

Conference

A. Seabaugh, “Complementary low-subthreshold-swing tunnel transistors,” invited, DARPA Defense Sciences Research Council Workshop on Emerging Technologies for Ultra-Low Power Dissipation Circuits, Arlington, VA, June 2, 2006.

B. Wu, D. Wheeler, Q. Zhang, P. Fay, A. Seabaugh, C. Yi, I. Yoon, A. Brown, and T. Kuech, “Current-voltage measurements and photoconductance spectroscopy of ultrathin InAs grown on (211) Si,” Mat. Res. Soc. (2006).

2005

Journal

W. Zhao, A. Seabaugh, V. Adams, D. Jovanovic, and B. Winstead, “Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain,” IEEE Electron Device Lett. 26, 410-412 (2005).

Q. Liu and A. Seabaugh, “Design approach using tunnel diodes for lowering power in differential amplifiers,” IEEE Trans. Circ. Sys. – II: Express Briefs, 52, 572-575 (2005).

L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. Seabaugh, “A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation,” IEEE Trans. Nanotechnology 4, 594-598 (2005).

Conference

W. Zhao, A. Seabaugh, B. Winstead, D. Jovanovic, and V. Adams, “Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric,” 2005 Device Research Conference, pp. 199-200.

Q. Zhang, W. Zhao, and A. Seabaugh, “Analytic expression and approach for low- subthreshold-swing tunnel transistors,” 2005 Device Research Conference, pp. 161-2.

A. C. Seabaugh, Q. Liu, S. Sutar, Q. Zhang, W. Zhao, J. Zhao, Y. Yan, B. Wu, S. Kabeer, D. Wheeler, Z. Racz, and P. Fay, “High speed, low power, and mixed signal tunneling device technology,” invited, Int. COE Workshop on Nano Processes and Devices, and their Applications, Nagoya, Japan, December 15-16, pp. 37-38, (2005).

2004

Journal

W. Zhao, J. He, R. Belford, L-E Wernersson, and A. Seabaugh, “Partially-depleted SOI MOSFETs under uniaxial tensile strain,” IEEE Trans. Electron Dev. 51, 317-323 (2004).

L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. Seabaugh, “SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion,” Electronics Lett. 40, 83-85 (2004).

Q. Liu, A. Seabaugh, P. Chahal, and F. Morris, “Unified AC model for the resonant tunneling diode,” IEEE Trans. Electron Dev. 51, 653-657 (2004).

Z. Racz, J. He, S. Srinivasan, W. Zhao, A. Seabaugh, K. Han, P. Ruchhoeft, and J. Wolfe, “Nanofabrication using nanotranslated stencil masks and lift off,” J. Vac. Sci. Technol. B 22, 74-76 (2004).

Conference

Y. Yan, J. Zhao, Q. Liu, W. Zhao, and A. Seabaugh, “Vertical tunnel diodes on high resistivity silicon,” 2004 Dev. Res. Conf. Digest, pp. 27-28.

Q. Liu, S. Sutar, and A. Seabaugh, “Tunnel diode/transistor differential comparator,” IEEE Lester Eastman Conference on High Perf. Devices Proceedings (2004).

A. Seabaugh, “Nanoelectronics - Evolutionary,” invited, National Nanotechnology Workshop on Grand Challenges in Nano-electronics, -Photonics, and -Magnetics in Arlington, VA on February 11, 2004.

A. Seabaugh, “Nanoelectronics in Autonomous Low-Power CMOS Systems,” invited, DARPA Workshop on the Integration of Scalable CMOS Systems with Novel Nanostructures in McLean, VA on January 12, 2004.

2003

Journal

J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, “Silicon tunnel diodes formed by proximity rapid thermal diffusion,” IEEE Electron Device Lett. 24, 93-95 (2003).

Conference

L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhao, Y. Yan, W. Seifert, and A. Seabaugh, “A combined UHV-CVD and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation,” Int. Semicond. Dev. Res. Conf. Proc. (2003) pp. 164-165.

Q. Liu and A. Seabaugh, “Unified physics-based ac model for the resonant tunneling diode,” 61st Device Research Conference Late News (2003).

Z. Racz, J. He, S. Srinivasan, W. Zhao, and A. Seabaugh, “Nanofabrication using nanotranslated stencil masks and lift-off,” 47th Int. Conf. on Electron, Ion, and Photon Beam Technology and Nanofabrication, pp. 175-176 (2003).

A. Seabaugh, “Emerging Technologies for Ambient Intelligence,” invited, Fifth International Workshop on Future Information Processing Technologies in Miyazaki, Japan on November 10, 2003.

2002

Conference

 J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, “Silicon tunnel diodes formed by proximity rapid thermal diffusion,” Proc. IEEE Lester Eastman Conference on High Performance Devices, pp. 393-401 (2002).

R. E. Belford, W. Zhao, J. Potashnik, Q. Liu, and A. Seabaugh, “Performance-augmented CMOS using back-end uniaxial strain,” 60th Device Research Conference Digest, IEEE catalog number 02TH8606, 41-42 (2002).

A. C. Seabaugh, “Multi-valued logic and the Esaki tunnel diode,” at the 11th Intenational Workshop on Post Binary Ultra Large Scale Integration (ULSI), University of Massachusetts, Boston, May 15, 2002.

2001

Journal

E. M. Jackson, B. D. Weaver, S. Shojah-Ardalan, R. Wilkins, A. C. Seabaugh, and B. Brar, “Irradiation effects in InGaAs/InAlAs high electron mobility transistors,” Appl. Phys. Lett. 79, 2279-2281 (2001)

Conference

B. D. Weaver, R. Magno, E. M. Jackson, R. Wilkins, S. Shojah-Ardalan, A. C. Seabaugh, B. Brar, M. O. Manasreh and Y. Berhane, “Disorder effects in reduced dimensional and quantum electronics,” Space Technology Applications Int. Forum Proceedings (Albuquerque, NM, 11-14 Feb. 2001) p. 1210.

A. Seabaugh, “Tunnel diodes for RF and digital applications” IEEE International Symposium Workshop on RF and and High Speed Applications of Tunnel Devices, Phoenix, Arizona, May 20, 2001.

A. Seabaugh, “Tunnel diodes for RF and digital applications” invited, IEEE International Symposium Workshop on RF and and High Speed Applications of Tunnel Devices, Phoenix, Arizona, May 20, 2001.

A. C. Seabaugh and C. S. Lent “Fundamentals of nanotechnology and nanocomputing” in Nanocomputing - Technology Trends, ed. by K. S. Lakshminarayanan, U. Devi, R. B. Shankar, and T.V. Gopal, Allied Publishers Limited, Chennai, India (2001).

C. S. Lent, M. Lieberman, and A. C. Seabaugh, “Integrated molecular electronics” in Nanocomputing - Technology Trends, ed. by K. S. Lakshminarayanan, U. Devi, R. B. Shankar, and T.V. Gopal, Allied Publishers Limited, Chennai, India (2001).

2000

Journal

B. D. Weaver, E. M. Jackson, G. P. Summers, and A. C. Seabaugh, “Disorder-effects in reduced dimension: InP resonant tunneling diodes,” J. Appl. Phys. 88, 6951 (2000).

B. D. Weaver, E. M. Jackson, A. C. Seabaugh, and P. van der Wagt, “MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes,” Appl. Phys. Lett. 76 2562-2564 (2000).

M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J. Kolodzey, A. C. Seabaugh, and R. Lake, “Current voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing,” IEEE Trans. Electron Dev. 47 1707-1714 (2000).

P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi and D. S. Simons, “Epitaxial Si-Based Tunnel Diodes,” Thin Solid Films, 380, pp. 145-150, (2000).

Conference

A. C. Seabaugh, “Tunnel diode integrated circuits,” invited, IEEE Int. Symp. Circ. Sys. Geneva, Switzerland, May 29-31, 2000, Proc. IEEE Int. Symp. Circ. Sys. (2000).

P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi, and D. S. Simons, “Epitaxial Si-based tunnel diodes,” invited presentation at European Materials Research Symposium Spring Meeting in Strasbourg, France, May 2000.

A. C. Seabaugh, Z. Hu, Q. Liu, D. Rink, and J. Wang, “Silicon-based tunnel diodes and integrated circuits,” 4th International Workshop on Quantum Functional Devices, Kanazawa, Japan, November 15, 2000. pp. 5-8.

A. C. Seabaugh, “Tunnel diode integrated circuits,” IEEE Int. Symp. Circ. Sys. Geneva, Switzerland, May 29-31, 2000, Proc. IEEE Int. Symp. Circ. Sys. (2000).

A. C. Seabaugh, “Resonant tunneling transistors,” Minneapolis, MN, March 20-24, 2000, Bul. Amer. Phys. Soc.

1999

Journal

A. Seabaugh, B. Brar, T. Broekaert, F. Morris, and G. Frazier, “Resonant tunneling mixed signal circuit technology,” Solid-State Electronics 43 1355-1365 (1999).

P. E. Thompson, K. D. Hobart, M. Twigg, G. Jernigan, T. E. Dillon, S. L. Rommel, P. R. Berger, D. S. Simons, P. H. Chi, R. Lake, and A. C. Seabaugh, “Si resonant interband tunnel diodes grown by low temperature molecular beam epitaxy,” Appl. Phys. Lett. 75 1308-1310 (1999).

R. Wilkins, S. Shojah.-Ardalan, W. P. Kirk, G. F. Spencer, R. T. Bate, A. C. Seabaugh, R. Lake, P. Stelmaszyk, A. D. Wieck, and T. N. Fogarty, “Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two dimensional electron gas transistors,” IEEE Trans. on Nuclear Science, 46, pp. 1702-1707 (1999).

E. M. Jackson, B. D. Weaver, A. C. Seabaugh, J. P. A. van der Wagt, and E. Beam III, “Proton-induced disorder in InP-based resonant tunneling diodes,” Appl. Phys. Lett. 75 280-282 (1999).

J. P. A. van der Wagt, H. Tang, T. P. E. Broekaert, A. C. Seabaugh, and Y.-C. Kao, “Multibit resonant tunneling diode SRAM cell based on slew-rate addressing,” IEEE Trans. Electron Dev. 46, pp. 55-62 (1999).

S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, “Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities,” Electron Dev. Lett. 20, pp. 329-331 (1999).

A. C. Seabaugh and P. Mazumder, “Scanning the issue on quantum devices and their applications,” Proc. IEEE, April 1999.

Conference

R. Wilkins, S. Shojah.-Ardalan, W. P. Kirk, G. F. Spencer, R. T. Bate, A. C. Seabaugh, R. Lake, P. Stelmaszyk, A. D. Wieck, and T. N. Fogarty, “Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two dimensional electron gas transistors,” Proc. NSREC (1999).

B. D. Weaver, E. M. Jackson, and A. C. Seabaugh, “H+ and He+ irradiation effects in InP-based resonant tunneling diodes,” Government Microcircuit Applications 1999 Digest of Papers, pp. 349-351.

P. Enquist, A. Seabaugh, D. H. Chow, Q.-Y. Tong, M. Simons, T. Broekaert, F. E. Reed, G. G. Fountain, M. Hamlett, E. Tangen, B. Brar, and F. Morris, “Symmetric intrinsic HBT/RTD technology for functionally dense, LSI 100 GHz circuits,” Government Microcircuit Applications 1999 Digest of Papers, pp. 210-213.

T. P. E. Broekaert, B. Brar, F. Morris, A. C. Seabaugh, and G. Frazier, “Resonant tunneling technology for mixed signal and digital circuits in the 10-100 GHz domain,” Proc. Ninth Great Lakes Symp. on VLSI, (1999).

A. C. Seabaugh, “Integrated quantum devices:  why bother?” Proc. 43rd Int. Conf. on Electron, Ion and Photon Beam Technology and Nanofabrication, San Marco Island, FL, June 2, 1999.

A. C. Seabaugh, “Tunneling-effect nanoelectronics,” 82nd Canadian Society for Chemistry Conf., Toronto, Canada, June 1, 1999.

1998

Journal

T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam III, and G. A. Frazier, “A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter,” IEEE J. Solid State Circ. 33, 1342-1349 (1998).

S. L. Rommel, T. E. Dillon III, M. W. Dashiell, H. Feng, J. Kolodzey, P. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck, and D. K. Blanks, “Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes,” Appl. Phys. Lett. 73, 2191-2193 (1998).

J. P. A. van der Wagt, A. Seabaugh, and E. Beam, III, “RTD/HFET low standby power memory cell,” IEEE Electron Dev. Lett. 19, 7-9 (1998).

A. Seabaugh and R. Lake, “Tunnel diodes,” Encyl. Appl. Phys. (1998) vol. 22, pp. 335-359.

Conference

S. L. Rommel, T. E. Dillon, P. R. Berger, R. Lake, P. E. Thompson, K. D. Hobart, A. C. Seabaugh, and D. Simons, “Si-based interband tunneling devices for high-speed logic and low power memory applications,” Int. Electron Dev. Mtg Technical Digest, pp. 1035-1037 (1998).

B. Weaver, E. M. Jackson, and A. C. Seabaugh, “High radiation tolerance of InP-based resonant tunneling diodes,” Proceedings of Int. Conf. on Integrated Micro/Nanotech. for Space Applications, IAIR Publications (Nanospace ’98 Conference Proceedings, Nov. 1-6, 1998, Houston, TX).

W. P. Kirk, G. F. Spencer, R. T. Bate, R. Wilkins, S. Ardalan, T. Fogarty, A. C. Seabaugh, and A. D. Wieck, “Studies of radiation effects in quantum devices,” Int. Conf. on Integrated. Nano/Microtech. for Space Appl. (1998).

B. Brar, G. D. Wilk, and A. C. Seabaugh, “Electronic properties of an epitaxial SiOx/Si heterojunction,” IEEE Silicon Nanoelectronics Workshop Abstracts, pp. 47-48 1998.

B. Brar, T. Broekaert, G. Frazier, F. Morris, A. Seabaugh, P. van der Wagt, and E. Beam III, “Resonant tunneling technology for ultra-high-speed circuits,” Government Microcircuit Applications 1998 Digest of Papers, pp. 222-225.

B. Brar, T. Broekaert, G. Frazier, F. Morris, A. Seabaugh, P. van der Wagt, and E. Beam III, “High speed analog-to-digital converters based on resonant tunneling technology,” Government Microcircuit Applications 1998 Digest of Papers, pp. 230-233.

J. P. A. van der Wagt, A. C. Seabaugh, B. Brar, T. P. E. Broekaert, and E. A. Beam III, “Tunneling-based static random access memory,” Government Microcircuit Appl. 1998 Digest of Papers, pp. 238-241.

B. Brar, P. van der Wagt, T. Broekaert, A. Seabaugh, G. Frazier, and E. Beam III, “Resonant tunneling diode circuits using epitaxial liftoff,” Government Microcircuit Applications 1998 Digest of Papers, pp. 381-384.

T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam III, and G. A. Frazier, “A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter,” GaAs IC Symposium Technical Digest 1997, pp. 187-190.

B. Brar, R. Steinhoff, A. Seabaugh, X. Zhou, S. Jiang, and W. P. Kirk, “Band offset measurement of the ZnS/Si (001) heterojunction,” 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 167-170 (1998).

J. P. A. van der Wagt, A. C. Seabaugh, G. Klimeck, E. A. Beam III, T. B. Boykin, R. C. Bowen, and R. Lake, “Ultralow current density RTDs for tunneling-based SRAM,” 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 601-604 (1998).

A. Seabaugh, B. Brar, T. Broekaert, F. Morris, G. Frazier, X. Deng, and T. Blake “Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory,” San Francisco, Int. Electron Dev. Mtg., Dec. 6, 1998, pp. 429-432 (1998).

A. C. Seabaugh, B. Brar, T. Broekaert, F. Morris, and G. Frazier, “Resonant tunneling analog/mixed signal circuit technology,” Top. Workshop on Heterostructure Microelectronics for Information Systems Applications, Hayamachi, Japan, Aug. 20, 1998, pp. 14-15 (1998).

A. C. Seabaugh, R. Lake, B. Brar, R. Wallace, and G. Wilk, “Silicon-based quantum MOS technology,” Government Microcircuit Applications 1998 Digest of Papers, pp. 377-380.

1997

Journal

Y. Wei, R. M. Wallace, and A. C. Seabaugh, “Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes,” J. Appl. Phys. 81, 6415-6424 (1997).

K. P. Clark, W. P. Kirk, and A. C. Seabaugh “Nonparabolicity effects in the bipolar quantum well resonant tunneling transistor,” Phys. Rev. B. 55, 7068-7072 (1997).

Conference

G. Klimeck, D. Blanks, C. Bowen, B. Brar, T. Broekaert, G. Frazier, D. Jovanovic, R. Lake, T. Moise, A. Seabaugh, G. Wilk, and P. van der Wagt, “Design and implementation of resonant tunneling devices into circuits and applications,” Proceedings of PHASDOM 97, (1997).

R. Lake, B. Brar, G. D. Wilk, A. C. Seabaugh, and G. Klimeck, “Resonant tunneling in disordered systems such as SiO2/Si/SiO2,” 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 617-620 (1998).

B. Brar, T. P. E. Broekaert, P. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam III, and G. A. Frazier, “3 GHz resonant tunneling clocked comparator,” 1997 Proc. IEEE/Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., pp. 28-34.

A. C. Seabaugh, “Beyond-the-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices,” Mat. Res. Soc. 486, Materials and Devices for Silicon-Based Optoelectronics, ed. by. A. Polman, S. Coffa, and R. Soref, pp. 67-78 (1998), Mat. Res. Soc. Symp. Boston, Dec. 2, 1997.

A. C. Seabaugh, “Quantum meets LSI,” 3rd Int. Workshop on Quantum Functional Devices,” Gaithersburg, Maryland, Nov. 5, 1997.

A. C. Seabaugh, B. Brar, T. Broekaert, G. Frazier, and P. van der Wagt, “Resonant tunneling circuit technology: has it arrived?” invited, GaAs IC Symposium, Anaheim, California, Oct. 14, 1997, GaAs IC Symposium Technical Digest 1997, pp. 119-122.

P. van der Wagt, A. Seabaugh, and E. Beam, III, “RTD/HFET low standby power memory cell,” 1996 Tech. Dig. IEDM, pp. 425-428.

T. P. E. Broekaert, J. N. Randall, E. A. Beam III, G. A. Frazier, D. Jovanovic, A. C. Seabaugh, and B. D. Smith, “Fabrication issues of lateral heterostructure resonant tunneling devices,” Conf. Proc. (1997).

1996

Journal

 T. P. E. Broekaert, J. N. Randall, E. A. Beam III, D. Jovanovic, A. C. Seabaugh, and B. D. Smith, “Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth,” Appl. Phys. Lett. 69, 1918-1920 (1996).

J. N. Randall, T. P. E. Broekaert, B. D. Smith, E. A. Beam III, A. C. Seabaugh, and D. Jovanovic, “Fabrication of lateral resonant tunneling devices with heterostructure barriers,” J. Vac. Sci. Technol. B 14, 4038-4041 (1996).

B. Brar, G. D. Wilk, A. C. Seabaugh, “Direct extraction of the electron tunneling effective mass in ultrathin SiO2,” Appl. Phys. Lett. 69, 2728-2730 (1996).

Y. Wei, R. M. Wallace, and A. Seabaugh, “Void formation on ultrathin thermal silicon oxide films on the Si (100) surface,” Appl. Phys. Lett. 69, 1270-1272 (1996).

[30]     K. P. Clark, W. P. Kirk, A. C. Seabaugh, and Y.-C. Kao, “Minority carrier magneto-oscillations in the bipolar quantum well resonant tunneling transistor,” J. Appl. Phys. 79, 2732-2737 (1996).

Conference

Y. C. Kao, F. G. Celii, T. S. Moise, and A. C. Seabaugh, “Sensor-based MBE for strained AlAs/InGaAs/InAs multiple-RTD growth,” State-of-the-Art Program on Compound Semicon. XXIV Symp. (1996).

Y. Wei, R. M. Wallace, and A. Seabaugh, “Evolution of Si(100) surface morphology during thermal oxidation and post-oxidation annealing,” Bul. Amer. Phys. Soc. 41, No. 1, 186 (1996).

S. Tang, R. M. Wallace, A. Seabaugh, and D King-Smith, “Electronic structure of the ultrathin SiO2/Si(100) interface: a first-principles study,” Bul. Amer. Phys. Soc. 41, No. 1, 206 (1996).

E. A. Beam, III, A. C. Seabaugh, H. F. Chau, W. Liu, and T. P. E. Broekaert, “Gas source molecular beam epitaxy of electronic devices,” Materials Research Society Proceedings (1996).

1995

Journal

M. D. Taylor, G. C. Wetsel, Jr., S. E. McBride, R. C. Bowen, W. R. Frensley, A. C. Seabaugh, Y.-C. Kao, and E. A. Beam, “Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures,” Appl. Phys. Lett. 66 3621-3623 (1995).

S. L. Skala, W. Wu, J. R. Tucker, J. W. Lyding, A. Seabaugh, E. A. Beam, and D. Jovanovic, “Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,” J. Vac. Sci. Technol. B, 13, 660-663 (1995).

W. Wu, S. L. Skala, J. R. Tucker, J. W. Lyding, A. Seabaugh, E. A. Beam III, and D. Jovanovic, “Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,” J. Vac. Sci. Technol. A, 13, 602-606 (1995).

Conference

J. L. Huber, T. A. Kramer, M. A. Reed, T. S. Moise, Y.-C. Kao, A. C. Seabaugh, C. L. Fernando, and W. R. Frensley, “Resonant tunneling through a confined state in a tunneling hot electron transfer amplifier,” Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

K. P. Clark, R. T. Bate, W. P. Kirk, A. C. Seabaugh, and Y.-C. Kao, “Magneto-oscillations in the bipolar quantum-well resonant tunneling transistor,” Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

T. P. E. Broekaert, A. C. Seabaugh, J. Hellums, A. Taddiken, H. Tang, J. Teng, and P. van der Wagt, “Resonant tunneling analog-to-digital converter,” Proc. Int. Conf. on Integrated Micro/Nanotechnol. For Space App. (1995).

G. C. Wetsel, M. D. Taylor, S. E. McBride, and A. C. Seabaugh, “Nano-probe induced electrostatic lateral quantization in near-surface double-barrier heterostructures,” Bul. Amer. Phys. Soc., vol. 40, no. 1, 22 (1995).

K. P. Clark, W. P. Kirk, and A. C. Seabaugh, “Nonparabolicity effects on resonant tunneling involving triangular quantum-well quasi-bound states,” Bul. Amer. Phys. Soc., vol. 40, no. 1, 21 (1995).

T. A. Kramer, J. L. Huber, M. A. Reed, T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Injection of ballistic electrons into virtual base states in a tunneling hot electron transfer amplifier,” Bul. Amer. Phys. Soc., vol. 40, no. 1, 254 (1995).

W. Wu, S. L. Skala, J. R. Tucker, and J. W. Lyding, “Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,” Proc. Amer. Vac. Soc. (1995)

A. C. Seabaugh, T. P. E. Broekaert, and A. H. Taddiken, “Resonant tunneling and quantum integrated circuits (Invited),” 22nd Int. Symp. on Comp. Semicond., Cheju Island, Korea, Aug. 28-Sept. 2, 1995.

A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” invited, IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., Ithaca, Aug. 7-9, 1995.

A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, “Silicon-based resonant tunneling, ” invited, 1995 Quantum Functional Devices Workshop, Matsue, Japan, May 22-25, 1995.

Y. C. Kao, and A. C. Seabaugh, “Artificially structured materials, riding electron waves,” invited, TI Technical J. (1995).

A. C. Seabaugh, T. P. E. Broekaert, and A. H.. Taddiken, “Resonant tunneling and quantum integrated circuits,” invited, 22nd Int. Symp. on Comp. Semicond., Cheju Korea, 1995.

A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” invited, Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, “Silicon-based resonant tunneling,” invited, Future Electron Devices J., (R&D Assoc. Future Electron Dev., Tokyo 1996) vol. 6, no. 3 pp. 34-36, in Japanese (1995).

R. M. Wallace, Y. Wei, S. Tang, and A. C. Seabaugh, “How much do we know about the Si/SiO2 interface?” invited, Proc. Texas Instruments 1995 Corporate R&D Technical Conference, (1995).

1994

Journal

T. S. Moise, Y.-C. Kao, A. C. Seabaugh, and A. H. Taddiken, “Integration of resonant-tunneling and hot-electron transistors,” IEEE Electron Dev. Lett. 15, 254-256 (1994).

T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Improved turn-on characteristics of a hot-electron transistor at 300 K,” IEEE Electron Dev. Lett. 15, 409-411 (1994).

T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Room temperature operation of a tunneling hot electron transfer amplifier,” Appl. Phys. Lett., 64, 1138-1140 (1994).

E. A. Beam III, H. F. Chau, T. S. Henderson, W. Liu, and A. C. Seabaugh, “The use of organometallic group-V sources for the MOMBE of InGaP/GaAs and InGaAs/InP heterojunction bipolar device structures,” J. Crys. Gr. 136, 1-10 (1994).

C. H. Mikkelson, A. C. Seabaugh, E. A. Beam, J. H. Luscombe, and G. A. Frazier, “Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/ memory applications,” IEEE Trans. Electron Dev. 41, 132-137 (1994).

Conference

K. P. Clark, W. P. Kirk, and A. C. Seabaugh, “Magneto-oscillations from a two-dimensional emitter in the bipolar quantum well resonant-tunneling transistor (BiQuaRTT),” Symp. Compound Semiconductors (1994).

K. P. Clark, W. P. Kirk, A. C. Seabaugh, “Magnetotransport characterization of the bipolar quantum resonant tunneling transistor,” Bul. Amer. Phys. Soc. (1994).

M. D. Taylor, S. E. McBride, G. C. Wetsel, and A. C. Seabaugh, “Scanned nanoprobe measurements of differential conductance oscillations in near-surface heterostructures,” Bul. Amer. Phys. Soc. (1994).

T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Co-integration of resonant-tunneling and single-barrier hot-electron transistors operating at 300 K,” InP and Related Compounds (1994).

T. S. Moise, A. C. Seabaugh, A. H. Taddiken, J. H. Luscombe, Y. C. Kao, E. A. Beam III, and G. A. Frazier, “Resonant-tunneling transistors and circuits,” 1994 Gov. Microcirc. Appl. Conf., 19th Dig. of Tech. Papers.

A. C. Seabaugh, “Resonant tunneling quantum devices and circuits,” Workshop on Physics and Computation, Dallas, TX, Nov. 17-20, 1994.

A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” Eighth Int.Conf. on Molecular Beam Epitaxy, Osaka, Japan, Aug. 30, 1994.

1993

Journal

A. C. Seabaugh, A. H. Taddiken, E. A. Beam III, J. N. Randall, Y.-C. Kao, and B. Newell, “Room temperature resonant tunneling bipolar transistor XNOR and XOR integrated circuits,” Electron. Lett. 29, 1802-1803 (1993).

A. C. Seabaugh, E. A. Beam III, A. H. Taddiken, J. N. Randall, and Y.-C. Kao, “Co-integration of resonant tunneling and heterojunction bipolar transistors on InP,” IEEE Electron Dev. Lett. 14, 472-474 (1993).

T. S. Moise, A. C. Seabaugh, E. A. Beam III, and J. N. Randall, “Room temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit,” IEEE Electron Dev. Lett. 14, 441-443 (1993).

T. S. Moise, A. C. Seabaugh, E. A. Beam III, Y.-C. Kao, and J. N. Randall, “Room temperature operation of InGaAs-based hot-electron transistors,” IEEE Trans. Electron Dev. 40, p. 2134 (1993).

W. Liu, A. C. Seabaugh, A. Yuksel, T. Henderson, S.-K. Fan, and E. A. Beam III, “Observation of resonant tunneling in GaInP/GaAs/GaInP double heterojunction bipolar transistor at room temperature,” IEEE Trans. Electron Dev. 40, 1384-1389 (1993).

A. C. Seabaugh, J. H. Luscombe, J. N. Randall, P. C. Colter, A. Dip, G. M. Eldallal, and S. M. Bedair, “Atomic layer epitaxy of quantum-well devices,” J. Thin Sol. Films 225, 99-104 (1993).

A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, "Quantum functional devices: Present status and future prospects," Fut. Electron Dev. J. (1993) vol. 3 (1) pp. 9-20.

A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Quantum functional devices: present status and future prospects,” FED J. 3, no. 1, (R&D Assoc. Future Electron Dev., Tokyo 1993) pp. 1629, in Japanese.

Conference

A. C. Seabaugh, A. H. Taddiken, E. A. Beam III, J. N. Randall, Y.-C. Kao, and B. Newell, “Co-integrated resonant tunneling and heterojunction bipolar transistor full adder,” Int. Electron Dev. Meeting Tech. Dig. 419-422 (1993).

T. S. Moise, A. C. Seabaugh, E. A. Beam III, Y.-C. Kao, and J. N. Randall, “Room temperature operation of InGaAs-based hot-electron transistors,” 51st Dev. Res. Conf. Abst., pp. 128-129, 1993.

L. J. Micheel, A. H. Taddiken, and A. C. Seabaugh, “Multiple-valued logic computation circuits using micro- and nanoelectronic devices,” 23rd Int. Symp. on Mult. Val. Logic (IEEE Comp. Soc. Press, Los Alamitos, CA 1993) pp. 164-169.

G. C. Wetsel, Jr., S. E. McBride, M. J. Taylor, H. Marchman, A. C. Seabaugh, L. A. Files, Y.-C. Kao, J. N. Randall, and G. A. Frazier, “Observation of periodic conductance oscillations in the dI/dV characteristics of near-surface resonant tunneling nanostructures using a scanning nanoprobe instrument,” Bul. Amer. Phys. Soc. (1993).

A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Quantum functional devices: present status and future prospects,” FED J. 3, suppl. 1, (R&D Assoc. Future Electron Dev., Tokyo 1993) pp. 920.

A. C. Seabaugh, “Resonant tunneling transistors,” Ultrafast Electronics and Optoelectronics Meeting, San Francisco, CA, January 25-27, 1993, OSA Ultrafast Electron. and Optoelec. 14., (Opt. Soc. Amer., Wash. DC 1993) pp. 65-70.

G. Frazier, A. Taddiken, A. Seabaugh, and J. Randall, “Nanoelectronic circuits using resonant tunneling transistors and diodes,” Dig. Tech. Papers Sol.-St. Circ. Conf. (IEEE no. 93CH3272-2 1993) pp. 174-175.

A. C. Seabaugh, “Nanoelectronics,” 1993 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, Oct. 4-5, 1993.

1992

Journal

A. Raychaudhuri, Z. X. Yan, M. J. Deen, and A. C. Seabaugh, “Hysteresis in resonant-tunneling-diode-based multiple-peak driver device for multivalued SRAM cells: analysis, simulation, and experimental results,” Can. J. Phys. 70, 993-1000 (1992).

J. N. Randall, A. C. Seabaugh, and J. H. Luscombe, “Fabrication of lateral resonant tunneling devices,” J. Vac. Sci. Technol. B 10, 2941-2944 (1992).

A. C. Seabaugh, Y. C. Kao, and H. T. Yuan, “Nine-state resonant tunneling diode memory,” IEEE Electron Dev. Lett. 13, 479-481 (1992).

E. A. Beam III, T. S. Henderson, A. C. Seabaugh, and J. Y. Yang, “The use of tertiarybutylphosphine and tertiarybutylarsine for metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs Materials Systems,” J. Crys. Gr. 116, 436-446 (1992).

Conference

A. H. Taddiken, A. C. Seabaugh, G. A. Frazier, and J. N. Randall, “Application of resonant tunneling devices in future electronic circuits,” 1992 Gov. Microcirc. Appl. Conf., 18th Dig. of Tech. Papers, pp. 13-16.

A. Seabaugh, J. Luscombe, J. Randall, and G. Frazier, “Quantum functional devices based on resonant tunneling,” Abst. 1st Int. Workshop Quan. Func. Dev., (R&D Assoc. Future Electron Dev., Tokyo 1992) p. 70.

Y.-C. Kao, A. C. Seabaugh, and H.T. Yuan, “Vertical integration of structured resonant tunneling diodes on InP for multi-state memory applications,” 4th Int. Conf. Proc. InP and Rel. Mat. (IEEE catalog no. #92CH3104-7, 1992) pp. 489-492.

E. A. Beam III and A. C. Seabaugh, “The use of tertiarybutylphosphine and tertiaybutylarsine for metalorganic molecular beam epitaxy of resonant tunneling devices,” Mat. Res. Soc. Proc. (Mat. Res. Soc., Pittsburg, PA 1992) pp. 33-38.

A. M. Bouchard, J. H. Luscombe, A. C. Seabaugh, and J. N. Randall, “Lateral resonant tunneling transistors: simulation, design, and experiment,” Nanostructures and Mesoscopic Systems, eds. W. P. Kirk and M. A. Reed, (Academic Press, NY 1992) pp. 393-401.

A. Seabaugh, J. Luscombe, J. Randall, Y.-C. Kao, S. Bedair, P. Colter, “Atomic layer epitaxy of quantum-well devices,” 2nd Int. Symp. on Atomic Layer Epitaxy, Raleigh, NC, June 3-5, 1992.

1991

Journal

A. C. Seabaugh, J. N. Randall, Y.-C. Kao, J. H. Luscombe, and A. M. Bouchard, “In0.52Al0.48As/ In0.53Ga0.47As lateral resonant tunneling transistor,” Electron. Lett. 27, 1832-1834 (1991).

J. N. Randall, A. C. Seabaugh, Y.-C. Kao, J. H. Luscombe, and B. L. Newell, “Electric field coupling to quantum dot diodes,” J. Vac. Sci. Technol. B 9, 2893-2897 (1991).

A. C. Seabaugh, Y.-C. Kao, W. R. Frensley, J. N. Randall, and M. A. Reed, “Resonant-transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor,” Appl. Phys. Lett. 59, 3413-3415 (1991).

A. C. Seabaugh, Y.-C. Kao, H.-Y. Yiu, J. H. Luscombe, H.-L. Tsai, M. A. Reed, and W. R. Frensley, “Formation of rotation-induced superlattices and their observation by tunneling spectroscopy,” Appl. Phys. Lett. 59, 570-572 (1991).

A. Seabaugh, Y.-C. Kao, J. Randall, W. Frensley, and A. Khatibzadeh, “Room temperature hot electron transistors with InAs-notched resonant-tunneling-diode injector,” Jpn. J. Appl. Phys. 30, 921-925 (1991).

Conference

A. C. Seabaugh, Y.-C. Kao, and J. N. Randall, “Bipolar quantum-well resonant-tunneling transistors with room temperature multiple negative differential resistance characteristic,” Proc. 1991 Int. Semicon. Dev. Res. Symp., Charlottesville, Va., pp. 65-68.

A. C. Seabaugh, “Physics of the bipolar quantum-well resonant-tunneling transistor,” Texas Sec. Amer. Phys. Soc., Univ. North Texas, Denton, Bul. Amer. Phys. Soc. (1991).

M. J. Deen, A. Ng, Y. Zhu, A. C. Seabaugh, and O. Berolo, “Low frequency noise in double barrier resonant tunneling diodes,” 1991 Int. Conf. Noise in Phys. Sys. and 1/f Fluctuations (IOS Press, Amsterdam, Netherlands 1992) pp. 195-198.

1990

Conference

A. C. Seabaugh, Y.-C. Kao, J. N. Randall, W. R. Frensley, and A. Khatibzadeh, “Resonant ionization in the base/collector junction of a bipolar tunneling transistor,” 48th Dev. Res. Conf. Abst., Santa Barbara (1990).

A. C. Seabaugh, Y.-C. Kao, J. N. Randall, W. R. Frensley, and A. Khatibzadeh, “Room temperature resonant-tunneling hot electron transistors with dc and microwave gain,” Ext. Abstr. 22nd Int. Conf. on Sol. St. Dev. and Mat., Part I, Sendai, 15-18 (1990).

A. C. Seabaugh, Y.-C. Kao, H.-Y. Liu, J. H. Luscombe, H.-L. Tsai, M. A. Reed, B. E. Gnade, and W. R. Frensley, “Characterization of unintentionally-ordered superlattice resonant-tunneling diodes,” Conf. Proc. 2nd Int. Conf. on InP and Rel. Mat., IEEE Catalog 90CH2859-7, 416-423 (1990).

M. A. Reed, A. C. Seabaugh, Y.-C. Kao, J. N. Randall, W. R. Frensley, and J. H. Luscombe, “Semiconductor resonant tunneling device physics and applications,” Mat. Res. Soc. Symp. Proc., 198, 309 (1990).

J. N. Randall,, M. A. Reed, J. H. Luscombe, G. F. Frazier, W. R. Frensley, A. C. Seabaugh, Y.C. Kao, T. M. Moore, and R. J. Matyi, “Advances in the processing of quantum coupled devices,” SPIE 1284, Nanostructures and Microstructures Correlation with Physical Properties of Semiconductors, 6674 (1990).

A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Resonant-tunneling transistor logic,” Government Microcircuits Applications Conference, Technology Strategies of the 90s, Las Vegas, Nevada, November 6, 1990, 1990 Gov. Microcirc. Appl. Conf., 16th Dig. Tech. Papers, 11-14 (1990).

A. C. Seabaugh, “The quantum transistor: realizing useful devices near the dimensional limit,” MIDCON Electronic Show and Convention, Dallas, TX, September 13, 1990, Proc. MIDCON/90 Electronics Conf., 396-399 (1990).

1989

Journal

A. C. Seabaugh, W. R. Frensley, J. N. Randall, M. A. Reed, D. L. Farrington, and R. J. Matyi, “Pseudomorphic bipolar quantum resonant-tunneling transistor,” IEEE Trans. Electron Dev. 36, 2328-2334 (1989).

A. C. Seabaugh, W. R. Frensley, R. J. Matyi, and G. E. Cabaniss, “Electrochemical CV profiling of heterojunction device structures,” IEEE Trans. Electron Dev. 36, 309-313 (1989).

M. A. Reed, W. R. Frensley, R. J. Matyi, J. N. Randall, and A. C. Seabaugh, “Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor (BiQuaRTT),” Appl. Phys. Lett. 54, 1034-1036 (1989).

M. A. Reed, W. M. Duncan, W. R. Frensley, R. J. Matyi, A. C. Seabaugh, and H. L. Tsai, “Quantitative resonant tunneling spectroscopy: current-voltage characteristics of precisely characterized RTDs,” Appl. Phys. Lett. 54 1256-1258 (1989).

Conference

 A. C. Seabaugh, W. R. Frensley, Y.-C. Kao, J. N. Randall, and M. A. Reed, “Quantum-well resonant-tunneling transistors,” Proc. IEEE/Cornell Conf. Adv. Concepts High Speed Semicon. Dev. and Circ. (IEEE cat. no. 89CH2790-4, 1989) pp. 255-264.

A. C. Seabaugh, W. R. Frensley, M. A. Reed, J. N. Randall, and R. J. Matyi, “Experimental investigation of the bipolar resonant tunneling transistor,” Bul. Amer. Phys. Soc., vol. 34, no. 6, 1522 (1989).

Y. C. Kao, A. C. Seabaugh, H. Y. Liu, T. S. Kim, and M. A. Reed, “Improved MBE growth of InGaAs-InAlAs heterostructures for high performance device applications,” SPIE, 1144, InP and Rel. Mat. for Adv. Electron. and Optoelec. Dev., 30-38 (1989).

1988

Journal

A. C. Seabaugh, “Selective etching of GaAs on AlGaAs using CCl2F2 and He,” J. Vac. Sci. Tech. B 6, 77-81 (1988).

Conference

A. C. Seabaugh, M. A. Reed, W. R. Frensley, J. N. Randall, and R. J. Matyi, “Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors,” Tech. Dig. Int. Electron Dev. Meeting, San Francisco, pp. 900- 902 (1988).

M. A. Reed, W. M. Duncan, W. R. Frensley, R. J. Matyi, A. C. Seabaugh, and H. L. Tsai, “Quantitative resonant tunneling spectroscopy: current-voltage characteristics of precisely characterized RTDs,” Inst. Phys. Conf. Ser. No. 96, Int. Symp. GaAs Rel. Comp., Atlanta, Georgia, pp. 587-592 (1988).

1986

Conference

P. Pollak-Dingles, G. Burdge, C. H. Lee, A. C. Seabaugh, R. Brundage, and M. I. Bell, “Investigation of photoconductive picosecond microstripline switches on self-implanted SOS,” Proc. SPIE, Reno (1986).

1984

Journal

K. P. Pande and A. C. Seabaugh, “Low temperature plasma-enhanced epitaxy of GaAs,” J. Electrochem. Soc. 131, 1357-1359 (1984).

Conference

A. C. Seabaugh, M. I. Bell, R. D. Larrabee, and J. D. Oliver, Jr., “High-frequency transient resistance spectroscopy of deep levels in semi-insulating GaAs,” Semi-Insulating III-V Mat., Kah-nee-ta, eds. D. C. Look and J.S. Blakemore (Shiva Pub. Ltd., Cheshire, UK 1984) pp. 437-445.

1983

Conference

K. P. Pande and A. C. Seabaugh, “Preparation of device quality GaAs using plasma-enhanced MOCVD technique,” Proc. III-V Opto-Electron. Epi. & Dev. Rel. Proc. Symp. (Electrochem. Soc. Press 1983) pp. 201-210.

1980

Journal

A. C. Seabaugh and R. J. Mattauch, “Removal of the high resistivity layer at the n on n+ liquid phase epitaxial layer-substrate interface by controlled in situ etchback,” J. Appl. Phys. 51, 6435-6437 (1980).

1979

Conference

A. C. Seabaugh and R. J. Mattauch, “Controlled in situ etchback for LPE GaAs,” IEEE Proc. Southeastcon ’79, 287-291 (1979).

Theses

A. C. Seabaugh, “Transient photoresistance spectroscopy of deep levels in semiconductors,” Ph.D. Thesis, Univ. of Va., Charlottesville, (Univ. Microfilms, Ann Arbor, MI 1985).

A. C. Seabaugh, “Liquid phase epitaxy for millimeter wave mixer diodes,” M. S. Thesis, Univ. of Va., Charlottesville, 1979

A. C. Seabaugh, “The Experimistor,” B. S. Thesis, Univ. of Va., Charlottesville, 1977.

Theses Advised - University of Notre Dame

Masters

Kamal Karda, "Low power bistable-body tunnel SRAM," December 2009. (co-advisor) [pdf]

Subhash S. Pidaparthi, "Low current density silicon tunnel diodes," April 2003. [pdf]

Surajit K. Sutar, "Processing issues in the development of indium-arsenide-base heterojunction bipolar transistors," April 2003. [pdf]

Bin Wu, "Sb-based high electron mobility transistors: Processing and device characterization," April 2003. [pdf]

Sajid Kabeer, "Silicon/silicon-germanium heterostructure tunnel diodes," April 2003. [pdf]

Doctor of Philosophy

Tim Vasen, "Investigation of III-V tunneling field-effect transistors," April 2014. [pdf]

Bin Wu, "InAs-on-SOI MOSFETs with extreme lattice mismatch," December 2009. [pdf]

Sajid Kabeer, "Indium-gallium-arsenide and germanium tunnel junctions," April 2009. [pdf]

Dana C. Wheeler, "High-k-InAs metal-oxide-semiconductor capacitors formed by atomic-layer deposition," April 2009. [pdf]

Qin Zhang, "Interband tunnel transistors," April 2009. [pdf]

Surajit Sutar, "Tunneling-based memory and advances in InP-based processing," March 2009. [pdf]

Yan Yan, "Silicon-based tunnel diode technology," July 2008. [pdf]

Zoltán Rácz, "Piezoflexure-enabled nanofabrication using translated stencil masks," April 2007. [pdf]

Jialin Zhao, "Engineering of silicon and germanium tunnel diodes for integrated circuit application," April 2007. [pdf]

Wei Zhao, "Impact of uniaxial strain on the electrical characteristics of MOSFETs and Esaki tunnel diodes," April 2006. [pdf]

Qingmin Liu, "Tunnel diode/transistor integrated circuits," April 2006. [pdf]

 

U.S. Patents

G. A. Frazier and A. C. Seabaugh, “Nanomechanical switches and circuits,” U. S. pat. number 6,548,841, 15 April 2003.

G. A. Frazier and A. C. Seabaugh, “Nanomechanical switches and circuits,” U. S. pat. number 6,534,839, 18 March 2003.

G. A. Frazier and A. C. Seabaugh, “Nanomechanical switches and circuits,” U. S. pat. number 6,495,905, 17 December 2002.

A. C. Seabaugh, “Hot carrier transistors utilizing quantum well injector for high current gain,” U. S. pat. number 6,201,258 B1, 13 March 2001.

A. C. Seabaugh, Y.-C. Kao, A. J. Purdes, and J. N. Randall, “Method of forming lateral resonant tunneling devices,” U. S. pat. number 6,139,483, 31 October 2000.

H.-T. Yuan and A. C. Seabaugh, “Multiple peak resonant tunneling diode,” U. S. pat. number 5,981,969, 9 November 1999.

A. C. Seabaugh, “Silicon resonant tunneling,” U. S. pat. number 5,796,119, 18 August 1998.

A. C. Seabaugh, “Bipolar resonant tunneling transistor frequency multiplier,” U. S. pat. number 5,767,526, 16 June 1998.

A. C. Seabaugh and C.-C. Cho, “Mixed barrier resonant tunneling,” U. S. pat. number 5,723,872, 3 March 1998.

A. C. Seabaugh and G. A. Frazier, “Magnetic field sensor using heterojunction bipolar transistors,” U. S. pat. number 5,680,280, 21 October 1997.

R. M. Wallace and A. C. Seabaugh, “Silicon oxide resonant tunneling diode structure,” U. S. pat. number 5,606,177, 25 February 1997.

G. A. Frazier and A. C. Seabaugh, “Multi-function resonant tunneling logic gate and method of performing binary and multi-valued logic,” U. S. pat. number 5,563,530, 8 October 1996.

A. C. Seabaugh, “Resonant tunneling transistor noise generator,” U. S. pat. number 5,554,860, 10 September 1996.

E. A. Beam III and A. C. Seabaugh, “Integrated field effect transistor and resonant-tunneling-diode,” U. S. pat. number 5,534,714, 9 July 1996.

A. C. Seabaugh, C. H. Mikkelson, and G. A. Frazier, “Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications,” U. S. pat. number 5,512,764, 30 April 1996.

A. C. Seabaugh and H. H. Hosack, “Method of forming implanted silicon resonant tunneling barriers,” U. S. pat. number 5,422,305, 6 June 1995.

E. A. Beam III and A. C. Seabaugh, “Method of making an integrated field effect transistor and resonant-tunneling-diode,” U. S. pat. number 5,416,040, 16 May 1995.

Y.-C. Kao, A. C. Seabaugh, H.-Y. Liu, and J. H. Luscombe, “Rotation induced superlattice,” U. S. pat. number 5,415,128, 16 May 1995.

A. C. Seabaugh, “Lateral resonant tunneling transistor with heterojunction barriers,” U. S. pat. number 5,408,106, 18 April 1995.

A. C. Seabaugh, “Method for fabricating lateral resonant tunneling transistor with heterojunction barriers,” U. S. pat. number 5,234,848, 10 August 1993.

A. C. Seabaugh, “Integration of lateral and vertical quantum-well transistors in the same epitaxial stack,” U. S. pat. number 5,179,037, 12 January 1993.

A. C. Seabaugh and R. J. Mattauch, “Controlled in situ etchback,” U. S. pat. number 4,373,989, 15 February 1983.

Foreign Patents

I. Obeid, A. C. Seabaugh, A. H. Taddiken, “Improvements in or relating to electrical circuits” European appl.. number 96116660.0-2214 [TI-21425] 8/24/95.

A. C. Seabaugh, “Silicon-based resonant tunneling diode implantation fabrication method,” Japanese pat. number 8,046,222, 16 February 1996.

A. C. Seabaugh, “Silicon -based resonant tunneling diode,” Japanese pat. number 8,018,029, 19 January 1996.

T. P. E. Broekaert, A. C. Seabaugh, and C.-C. Cho, “Resonant tunneling devices having tunnel barriers made of two different materials e.g. CaF2 and silica,” European pat. number 697,741, [TI 19628,19629] 21 February 1996.

A. C. Seabaugh and H. H. Hosack, “Silicon-based resonant tunneling diode,” European pat. number 651,447, [TI 18681] 3 May 1995.

G. A. Frazier and A. C. Seabaugh, “Multi-function resonant tunneling logic for arithmetic calculations,” Japanese pat. number 7,007,416 [TI-16931] 10 January 1995.

G. A. Frazier and A. C. Seabaugh, “Multi-function resonant tunneling logic for arithmetic calculations,” European pat. number 596,691 [TI-16931] 11 May 1994.

A. C. Seabaugh, “Lateral resonant tunneling transistor with heterojunction barriers,” Japanese pat. number. 5251713, 28 September 1993.

Y.-C. Kao, A. C. Seabaugh, H.-Y. Liu, and J. H. Luscombe, “Rotation-induced superlattice,” Japanese pat. number 5,114,768 [TI-15221] 7 May 1993.

Y.-C. Kao, A. C. Seabaugh, H.-Y. Liu, and J. H. Luscombe, “Method of forming a rotation-induced superlattice structure and superlattice structure,” European pat. number 508,463 [TI-15221] 14 October 1992.

Provisional Patent Filings

K. Karda, J. Brockman, A. Seabaugh, “Bistable-body tunnel SRAM,” (2009).

A. C. Seabaugh, P. Fay, H. Xing, Y. Lu, G. Zhou, M. Wistey, S. Koswatta, “Method for fabrication of low subthreshold swing vertical tunnel field-effect transistors,” Docket 11-005, provisional sent August 9, 2010.

A. Seabaugh, S. Fullerton, “Single transistor random access memory using ion storage in 2D crystals,” provisional sent September 20, 2012.

 

 

02.05.14