2009:
“Lasing of whispering–gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots”, Y. Chu, A. M. Mintairov, Y. He, J. L. Merz, N. A. Kalyuzhnyy, V. M. Lantratov, S. A. Mintairov, Physics Letters A 373, 1185 (2009).
“Atomic arrangement and emission properties of GaAs(In,Sb)N quantum wells”, A.M. Mintairov, K. Sun, J.L. Merz, H. Yuen, S. Bank, M. Wistey, J.S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, Semiconductor Science and Technology,
24, 075013 (2009).
“Influence of N interstitials on the electronic properties of GaAsN alloys”, Y. Jin, R.M. Jock, H. Cheng, Y. He, A.M. Mintairov, Y. Wang, C. Kurdak, J.L. Merz, and R.S. Goldman, Appl. Phys. Letters
95, 062109 (14 August 2009).
“Influence of Si-N complexes on the electronic properties of GaAsN alloys”, Y. Jin, Y. He, H. Cheng, R.M. Jock, T. Dannecker, M. Reason, A.M. Mintairov, C. Kurdak, J.L. Merz, and R.S. Goldman, Appl. Phys. Letters
95, 092109 (3 Sept. 2009).
“Near-field scanning optical microscopy of colloidal CdSe nanowires”, Alexander M. Mintairov, Joseph Herzog, Masaru Kuno, and James L. Merz, Proc. 14th International Conference on II-VI Compounds, St. Petersburg, Russia; August 23-28 (2009); physica status solidi c, to be published.
2008:
“High spatial resolution photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots”, A.M. Mintairov, Y. Chu, Y. He, S. Blokhin, A. Nadtochy, M. Maximov, V. Tokranov, S. Oktyabrsky, and J.L. Merz, Physical Review
B 77, 195322 (2008)
2007:
“The Use of Near-Field Magneto-Luminescence to Study Phase Separation and Localization in Compound Semiconductors”, Alexander M. Mintairov and James L. Merz, Proc. IEEE Nanotechnology Materials and Devices Conference 2006, Gyeongju, Korea, Oct. 22-25 (2006), page 128-130.
Invited. IEEE NTC Review, to be published (October 2007).
“Infrared Reflectivity Spectroscopy of Optical Phonons in Short-period AlGaN/GaN Superlattices”, J. B. Herzog, A.M. Mintairov, K. Sun, Y. Cao, D. Jena, and J.L. Merz, Proc. SPIE, August 2007.
“High spatial resolution photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots”, A.M. Mintairov, Y. Chu, Y. He, S. Blokhin, A. Nadtochy, M. Maximov, V. Tokranov, S. Oktyabrsky, and J.L. Merz, manuscript in preparation.
2006:
“The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed”, Thomas E. Vandervelde, Kai Sun, James L. Merz, Alan Kubis, Robert Hull, Timothy L. Pernell, and John C. Bean, J. Appl. Physics
99, 124301 (15 June 2006).
“Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy”, Kejia (Albert) Wang, Yu Cao, John Simon, Jing Zhang, Alexander Mintairov, James Merz, Douglas Hall, Thomas Kosel, and Debdeep Jena, Appl. Physics Letters
99, 162110 (2006)
“Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance”, D.S. Sizov, V.S. Sizov, V.V. Lundin, E.E. Zavarin, A.F. Tsatsul’nikov, A.S. Vlasov, Yu.G. Musikhin, N.N. Ledentsov, A.M., Mintairov, K. Sun and J. Merz, phys. stat. sol. (c)
3, #6, 2043-2047 (2006).
“Single versus Ensemble Quantum Dot Emission in Near-field Spectra of InGaN QWs”, A.M., Mintairov, J. Merz, D.S. Sizov, V.S. Sizov, V.V. Lundin, E.E. Zavarin, A.F. Tsatsul’nikov, A.S. Vlasov, N.N. Ledentsov, Proc. 14th International Symp.
Nanostructures: Physics and Technology, St. Petersburg, Russia; June 26-30 (2006).
2005:
“Optical Study of InGaN/GaN and InGaN/InGaN QDs grown in a wide pressure range MOCVD reactor”, D.S. Sizov, V.S. Sizov, V.V. Lundin, E.E. Zavarin, A.F. Tsatsul’nikov, A.S. Vlasov, N.N. Ledentsov, A.M., Mintairov, K. Sun and J. Merz, Proc. 13th International Symp.
Nanostructures: Physics and Technology, St. Petersburg, Russia; June 20-25, (2005).
“Characterization of 2D-Photonic Crystal Nanocavities by Polarization-Dependent Photoluminescence”,Y. Tang, A. M. Mintairov, J. L. Merz, V. Tokranov and S. Oktyabrsky, 5th IEEE Conference on Nanotechnology, Nagoya, Japan, July 2005 (IEEE Press).
“Single dot near-field spectroscopy for photonic crystal microcavities”, Alexander Mintairov, Yan Tang, James Merz, Vadim Tokranov, and Serge Oktyabrsky, Proc. Conf. on Physics of Photon-Light Coupling in Nanostructures (PLMC), St. Petersburg, Russia, June 2004; phys. stat. sol. c 2, 845-849 2005.
2004:
"Nanoindentation and Near-Field Spectroscopy of Single Semiconductor Quantum Dots," A.M. Mintairov, K. Sun, J.L. Merz, C. Li, P.A. Blagnov, A.S. Vlasov, D.A Vinokurov, O.V. Kovalenkov, V. Tokranov, and S. Oktyabrsky, Physical Review B
69, 155306 (2004).
"Near-field Magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys", A.M. Mintairov, P.A. Blagnov, J.L. Merz, V.M. Ustinov, A.S. Vlasov, A.R. Kovsh, J.S. Wang, L. Wei, and J.Y. Chi, Physica E
21, 385-389 (2004);
Low-dimensional Systems and Nanostructures, Proc. 11th Int. Conf. on Modulated Semiconductor Structures, Nara, Japan, July 2003; edited by Y. Arakawa, H. Ohno, K. Hirakawa, and M. Tanaka (Elsevier 2004).
“Near-Field Magneto-Photoluminescence of Single Self-Organized Quantum Dots,” A.M. Mintairov, A.S. Vlasov, and J.L. Merz,
Progress in Compound Semiconductor Materials III – Electronic and Optoelectronic Applications, edited by D. Friedman, M.O. Manasreh, I. Buyanova, F.D. Auret, and A. Munkholm; Proceedings of the Fall Meeting of the Materials Research Society, Boston Mass, December 2003 (Mater. Res. Soc., Warrendale, PA; 2004);
Vol. 799, pg. 351-356 (2004).
“Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy”, T. Prutskij, P. Diaz-Arencibia,.Brito-Orta,-R.-A.;Mintairov,-A.; Kosel,-T.; Merz,-J.;
J.of Physics-D Applied-Physics. 37(11) 1563-8, (2004).
“Exciton Localization in InGaAsN and GaAsSbN Observed by Near-field Magnetoluminescence”, James L. Merz, Alexander M. Mintairov, Thomas Kosel, and Kai Sun, Proceedings of the Spring meeting of the European Marterials Research Society, Symposium M,
Invited Talk; IEE Proceedings Optoelectronics,
151, No. 5, 346-351 (October 2004).
“Near-field scanning optical microscopy of composition fluctuaions in diluted ntride alloys”, A.M. Mintairov, T. Kosel, J.L. Merz, K. Sun, P.A. Blagnov, A.E. Egorov, A.R. Kovsh, V.M. Ustinov, J.S. Wang, L. Wei, J.Y. Chi, and G.M. Peake; Proc. 12th International Symp.
Nanostructures: Physics and Technology, St. Petersburg, Russia; June 21-25 (2004).
2003:
"Effects of Bond Relaxation on the Martensitic Transition and Optical Phonons in Spontaneously Ordered GaInP2," A.M. Mintairov, J.L. Merz, and A.S. Vlasov, Phys. Rev.
B 67, 205211 (15 May 2003).
“Inherent Nature of Localized States in Highly-Planar Monolayer InAs/GaAsN Pseudo-Alloys,” I.L. Krestnikov, R. Heitz, N.N. Ledentsov, A. Hoffmann, A.M. Mintairov, T.H. Kosel, J.L. Merz, I.P. Soshnikov, and V.M. Ustinov, Appl. Phys. Lett.
83, 3728 (2003)
“Mechanical Interaction in Near-Field Spectroscopy of Single Semiconductor Quantum Dots”, A.M. Mintairov, P. A. Blagnov, O. V. Kovalenkov, C. Li, J. L. Merz, S.Oktyabrsky, V. Tokranov, A. S. Vlasov, D. A. Vinokurov,
Compound Semiconductors 2002, Proceedings of the 29th Int. Symposium, Lausanne, 7-10 October 2002; Institute of Physics Conference Series # 174, ed. M. Ilegems, G. Weimann, and J. Wagner (IOP Publishing Ltd., Briston, 2003); pages 137-140 (2003).
“Synthesis and Optical Properties of Photonic Crystals Based on Opal-GaP and Opal-GaPN Composites”, G. M. Gadzhiev, V. G. Golubev, M. V. Zamoryanskaya, D. A. Kurdyukov, A. V. Medvedev, J. Merz, A. Mintairov, A. B. Pevtsov, A. V. Sel'kin, V. V. Travnikov, and N. V. Sharenkova, Semiconductors 37 (No.12), 1400-1405 (December 2003).
“Some evidences of ordering in InGaP layers grown by liquid phase epitaxy”, Prutskij,-T.-A.; Diaz-Arencibia,-P.; Mintairov,-A.; Merz,-J.; Kosel,-T.,
Appl. Surf. Sci. 212-213, 230-4 (2003).
