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Research LaboratoriesThe Optoelectronics Laboratory
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The Cryogenic Characterization Laboratory
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The Nano-Optics Laboratory
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The High-Speed Circuits and Devices Laboratory
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The Device Simulation LaboratoryThis laboratory has a state-of-the-art cluster of Workstations, with graphics capability and ready access to supercomputers. (Lent and Porod) |
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Here
you will find extensive equipment dedicated to compound semiconductor
processing and optoelectronic materials and device characterization,
including a variable angle spectroscopic ellipsometer, 10-watt
Argonion laser, cw Titanium Sapphire laser, diode lasers, related
detector and optical systems for photoluminescence and waveguide
analysis, an optical spectrum analyzer, and an optical fiber
fusion splicer. (Hall)
In
this laboratory, electrical measurements of devices can be performed
anywhere between room temperature and 10 mK, and in magnetic
fields up to 11T. Several cryogenic systems are available, including
two 300 mK Helium cryostats and a dilution refrigerator. This
facility specializes in low noise, and high speed measurements,
especially useful for the department's nanoelectronics effort.
(Snider and Orlov)
The
Nano-Optics Laboratory provides unique capabilities for ultra
high spatial, temporal, and spectral resolution measurements.
Equipment includes a picosecond streak camera, two Argon ion lasers, two solid state lasers, a tunable, mode-locked
titanium-sapphire laser delivering femtosecond pulses, a helium-cadmium
laser, dye lasers, two near-field scanning optical microscopes
(NSOM), a Fourier transform infra-red spectrometer (FTIR), a
Digital Instruments atomic force microscope (AFM), a 12 Tesla
magnet, and several helium cryostats and spectrometers. One of
the NSOM systems allows near-field optical measurements at cryogenic
temperatures and magnetic fields up to 12 T. (Merz)
The
High-Speed Circuits laboratory houses a state-of-the-art MMIC
design and characterization facility that includes three Cascade
microwave probe stations, four vector network analyzers covering the frequency range from 3 kHz to 110 GHz, on-wafer
noise analysis to 26 GHz, an ultrawideband signal analysis system,
spectral response characterization for millimeter-wave detection to 330 GHz, digital storage oscilloscopes with bandwidths of over 75 GHz for mixed-signal
analysis, and digital circuit testing to 40 Gb/s. The lab offers
the capability for optoelectronic characterization of high-speed
detector and photoreceiver subsystems to 50 GHz. (Fay) 