Optoelectronics Research Group - Publications - Journal Articles

Journal Articles

+ J48 to J31 (2002 - Present)

J48.	C.S. Seibert and D.C. Hall, “High-index-contrast ridge waveguide laser with thermally oxidised etched facet and metal reflector,” Electronics Letters, vol. 46, no. 15, p. 1077-8 (2010). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2010 Institution of Electrical Engineers (IEE). Available from IET Digital Library. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.
J47.	C.S. Seibert, D.C. Hall, D. Liang, and Z. A. Shellenbarger “Reduction of AlGaAs heterostructure high-index-contrast ridge waveguide scattering loss by sidewall smoothing through oxygen-enhanced wet thermal oxidation,” IEEE Photonics Technology Letters, vol. 22, no. 1, p. 18-20 (2010). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2010 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J46.	Y. Lou, D.C. Hall, “Low-loss nonselectively oxidized Al_xGa_1-xAs heterostructure waveguides,” Applied Physics Letters, vol. 93, no. 26, p. 261111 (2008). + More Information / Get the Article The above article may be found at Scitation. Copyright 2008 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J45.	D. Liang, D.C. Hall, J.Y.-T. Huang, G. Tsvid, L.J. Mawst, “Native-oxide-confined high-index-contrast λ=1.15 µm strain-compensated InGaAs single quantum well ridge waveguide lasers,” Applied Physics Letters, vol. 93, no. 16, p. 161108 (2008). + More Information / Get the Article The above article may be found at Scitation. Copyright 2008 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J44.	Jing Zhang, Thomas H. Kosel, Douglas C. Hall, and Patrick Fay, “Fabrication and Performance of 0.25 μm Gate Length Depletion-Mode GaAs-channel MOSFETs with Self-Aligned InAlP Native Oxide Gate Dielectric,” IEEE Electron Device Letters, vol.29, no. 2, pp. 143-145 (2008). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2008 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J43.	M. Huang and D.C. Hall, “Enhanced 1.53 μm photoluminescence from Er-doped AlGaAs wet thermal oxides by post-oxidation implantation," Applied Physics Letters, vol. 91, no. 17, pp. 171115 (2007). + More Information / Get the Article The above article may be found at Scitation. Copyright 2007 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J42.	Di Liang, Jusong Wang, Juno Yu-Ting Huang, Jeng-Ya Yeh, Luke J. Mawst and Douglas C. Hall, “Deep-Etched Native-Oxide-Confined High-Index-Contrast AlGaAs Heterostructure Lasers With 1.3 μm Dilute-Nitride Quantum Wells," IEEE Journal of Selected Topics in Quantum Electronics (special issue on Semiconductor Lasers), vol. 13, no. 5, pp. 1324-1331 (2007). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2007 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J41.	D. Liang and D.C. Hall, “Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation," Applied Physics Letters, vol. 91, article 061110 (2007). (3 pages) + More Information / Get the Article The above article may be found at Scitation. Copyright 2007 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J40.	D. Liang, J. Wang and D.C. Hall, “Single-Facet Folded-Cavity Diode Laser With Ultra-Small Bend Radius High-Index-Contrast Oxidized AlGaAs Ridge Waveguide," IEEE Photonics Technology Letters, vol. 19, no. 8, pp. 598-600 (2007). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2007 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J39.	Kejia (Albert) Wang, Yu Cao, John Simon, Jing Zhang, Alexander Mintairov, James Merz, Douglas Hall, Thomas Kosel, and Debdeep Jena, “Effect of dislocation scattering on the transport properties of InN grown GaN substrates by molecular beam epitaxy," Applied Physics Letters, vol. 89, no. 16, article 162110 (2006). (3 pages) + More Information / Get the Article The above article may be found at Scitation. Copyright 2006 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J38.	Di Liang, Jusong Wang and Douglas C. Hall, “High-Efficiency Native-Oxide-Passivated High-Index-Contrast Ridge Waveguide Lasers," Electronics Letters (2006), vol. 42, pp. 349-350 (2006). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2006 Institution of Electrical Engineers (IEE). From IET Digital Library.
J37.	Y. Cao, X. Li, P. Fay, J. Zhang, T. H. Kosel and D. C. Hall, “Microwave Performance of GaAs MOSFET with Wet-Thermally-Oxidized InAlP Gate Dielectric,” IEEE Electron Device Letters, vol. 27, pp. 317-319 (2006). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2006 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J36.	Yong Luo and Douglas C. Hall, “Non-Selective Wet Oxidation of AlGaAs Heterostructure Waveguides Through Controlled Addition of Oxygen,” IEEE J. Selected Topics in Quantum Electronics, Special Issue on Optoelectronic Materials and Processing, vol. 11, pp. 1284-1291 (2005). + More Information / Get the Article The above article may be found at IEEE Xplore. ©2005 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J35.	Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, and D. C. Hall, X. Zhang, R. D. Dupuis, J. B. Jasinski and Z. Liliental-Weber, “Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications,” Applied Physics Letters, vol. 86, article 062105 (February 7, 2005). + More Information / Get the Article The above article may be found at Scitation. Copyright 2005 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J34.	X. Li, Y. Cao, D. C. Hall, P. Fay, B. Han, A. Wibowo and N. Pan, “GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric,” IEEE Electron Device Letters, vol. 25, pp. 772-774 (2004). + More Information / Get the Article The above article may be found at IEEE Xplore. ©2004 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J33.	X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang and R. D. Dupuis, “Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostuctures using impedance spectroscopy,” Journal of Applied Physics, vol. 95, pp. 4209-4212 (2004). + More Information / Get the Article The above article may be found at Scitation. Copyright 2004 American Institute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J32.	L. Kou, D. C. Hall, C. Strohhöfer, A. Polman, T. Zhang, R. M. Kolbas, R. Heller and R. D. Dupuis, “Er-doped AlGaAs Native Oxides: Photoluminescence Characterization and Process Optimization,” Journal of Selected Topics in Quantum Electronics, Special Issue on Optoelectronic Materials and Processing, vol. 8, pp. 880-890 (July/August 2002). + More Information / Get the Article The above article may be found at IEEE Xplore. ©2002 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J31.	P. Z. Zatta and D. C. Hall, “Ultra-high-stability two-stage superfluorescent fibre sources for fibre optic gyroscopes,” Electronics Letters, vol. 38, pp. 406-408 (2002). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2002 Institution of Electrical Engineers (IEE). Available from IET Digital Library.

+ J30 to J25 (1998 - 2001)

J30.	S.K. Cheong, B. A. Bunker, T. Shibata, D. C. Hall, C. B. DeMelo, Y. Luo, G. L. Snider, G. Kramer and N. El-Zein, “The residual arsenic site in oxidized Al_xGa_1-xAs (x=0.96),” Applied Physics Letters, vol. 78, no. 17, pp. 2458-2460 (2001). + More Information / Get the Article The above article may be found at Scitation. Copyright 2001 AmericanInstitute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J29.	Seong-Kyun Cheong, Bruce A. Bunker, D.C. Hall, G.L. Snider, and P. J. Barrios, “XAFS and X-ray reflectivity study of III-V compound semiconductor native oxide/GaAs interfaces,” Journal of Synchrotron Radiation, vol. 8, pp. 824-826 (2001). + More Information / Get the Article The above article may be found at S.-K. Cheong et al., J. Synchrotron Rad. 8, 824-826. Copyright 2001 International Union of Crystallography. A reprint (pdf format) of the above article may be downloaded for personal use only. Any other use requires prior permission of the author and the International Union of Crystallography.
J28.	C. B. DeMelo, D.C. Hall, G.L. Snider, D. Xu, G. Kramer, and N. El-Zein, “High-Electron-Mobility InGaAs-GaAs Field-Effect Transistor with Thermally Oxidized AlAs Gate Insulator,” Electronics Letters, vol. 36, pp. 84-86 (2000). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2002 Institution of Electrical Engineers (IEE). Available from IET Digital Library.
J27.	Y. Luo, D. C. Hall, L. Kou, L. Steingart, J. H. Jackson, O. Blum and H. Hou, “Oxidized Al_xGa_1-xAs heterostructure planar waveguides,” Applied Physics Letters, vol. 75, pp. 3078-3080 (1999). + More Information / Get the Article The above article may be found at Scitation. Copyright 1999 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J26.	D. C. Hall, H. Wu, L, Kou, Y.Luo, R. J. Epstein, O.Blum, H.Hou, “Refractive index and hygroscopic stability of AlxGa1-xAs native oxides,” Applied Physics Letters, vol. 75, pp. 1110-1112 (1999). + More Information / Get the Article The above article may be found at Scitation. Copyright 1999 American Institute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J25.	L. Kou, D. C. Hall and H. Wu, “Room-temperature 1.5 µm photoluminescence of Er³⁺-doped Al_xGa_1-xAs native oxides,” Applied Physics Letters, vol. 72, pp. 3411-3413 (1998). + More Information / Get the Article The above article may be found at L. Kou et al., Appl. Phys. Lett. 72, 3411 (1998). Copyright 1998 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Last updated September 2010 by:

Dr. Douglas C. Hall

Associate Professor

260 Fitzpatrick Hall of Engineering

Department of Electrical Engineering

University of Notre Dame

Notre Dame, IN 46556-5637

Phone: (574) 631-8631

Fax: (574) 631-4393

e-mail: dhall@nd.edu