Optoelectronics Research Group - Publications - Conference and Symposia Papers

Current Research Topics

+ GaAs-based semiconductor lasers

J48.	C.S. Seibert and D.C. Hall, “High-index-contrast ridge waveguide laser with thermally oxidised etched facet and metal reflector,” Electronics Letters, vol. 46, no. 15, p. 1077-8 (2010). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2010 Institution of Electrical Engineers (IEE). Available from IET Digital Library. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.
J45.	D. Liang, D.C. Hall, J.Y.-T. Huang, G. Tsvid, L.J. Mawst, “Native-oxide-confined high-index-contrast λ=1.15 µm strain-compensated InGaAs single quantum well ridge waveguide lasers,” Applied Physics Letters, vol. 93, no. 16, p. 161108 (2008). + More Information / Get the Article The above article may be found at Scitation. Copyright 2008 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J42.	Di Liang, Jusong Wang, Juno Yu-Ting Huang, Jeng-Ya Yeh, Luke J. Mawst and Douglas C. Hall, “Deep-Etched Native-Oxide-Confined High-Index-Contrast AlGaAs Heterostructure Lasers With 1.3 μm Dilute-Nitride Quantum Wells," IEEE Journal of Selected Topics in Quantum Electronics (special issue on Semiconductor Lasers), vol. 13, no. 5, pp. 1324-1331 (2007). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2007 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J41.	D. Liang and D.C. Hall, “Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation," Applied Physics Letters, vol. 91, article 061110 (2007). (3 pages) + More Information / Get the Article The above article may be found at Scitation. Copyright 2007 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J40.	D. Liang, J. Wang and D.C. Hall, “Single-Facet Folded-Cavity Diode Laser With Ultra-Small Bend Radius High-Index-Contrast Oxidized AlGaAs Ridge Waveguide," IEEE Photonics Technology Letters, vol. 19, no. 8, pp. 598-600 (2007). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2007 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J38.	Di Liang, Jusong Wang and Douglas C. Hall, “High-Efficiency Native-Oxide-Passivated High-Index-Contrast Ridge Waveguide Lasers," Electronics Letters (2006), vol. 42, pp. 349-350 (2006). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2006 Institution of Electrical Engineers (IEE). From IET Digital Library.
J31.	P.Z. Zatta and D.C. Hall, “Ultra-high-stability two-stage superflourescent fibre sources for fiber optic gyroscopes,“ Electronics Letters, vol. 38, pp. 406-408 (2002) + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2002 Institution of Electrical Engineers (IEE). Available from IET Digital Library.
C59.	Wangqing Yuan, Christopher S. Seibert, and Douglas C. Hall “Single Facet Teardrop Laser with Matched Bends Design,” IEEE International Semiconductor Laser Conference, paper ThC5 (Kyoto Japan, September 26-30, 2010).
C57.	C.S. Seibert, W. Yuan, D.C. Hall, X. Luo, T. Moretti, A.R. Sugg, "High-index-contrast single output teardop laser fabricated via oxygen-enhanced non-selective oxidation," paper JTuD106 in CLEO '10: Conference on Lasers and Electro-Optics, 2010 (San Jose, California, May 16-21, 2010), OSA Technical Digest Series (Optical Society of America, Washington, D. C., 2010).
C56.	J. Wang, W. Yuan, C.S. Seibert, D.C. Hall, "Loss characterization of high-index-contrast ridge waveguide oxide-confined InAlGaAs quantum well ractreack ring-resonator lasers," Proceedings of the SPIE - The International Society for Optical Engineering, vol. 7230, p. 7230oJ, 2009.
C50.	Jusong Wang, Douglas C. Hall, Vadim Tokranov and Serge Oktyabrsky, "Native-Oxide-Confined High-Index-Contrast InAs Quantum-Dot Laser Diodes," pp. 125-126, 65^th Device Research Conference Digest, ISBN: 1-4244-1102-5 (Notre Dame, IN, June 18-20, 2007).
C49.	Di Liang and Douglas C. Hall, "High Efficiency Oxide-Confined High-Index-Contrast Broad-Area Lasers with Reduced Threshold Current Density and Improved Near-Field Profile," pp. 115-116, 65^th Device Research Conference Digest, ISBN: 1-4244-1102-5 (Notre Dame, IN, June 18-20, 2007).
C47.	(Invited) Douglas C. Hall, “Nonselective wet thermal oxidation of low-Al content and Al-free compound semiconductor alloys for lasers and MOS devices,” non-refereed invitation-only workshop presentation, WOCSEMMAD '07: The Workshop on Compound Semiconductor Materials and Devices (Savannah, Georgia, February 18-21, 2007).
C46.	(Invited) Di Liang, Jusong Wang, Douglas C. Hall, “Nonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane lasers,” invited paper submission, Optoelectronics 2007 at Photonics West: Novel In-Plane Semiconductor Lasers VI (San Jose, California, January 20-25, 2007).
C45.	Di Liang, Jason M. Kulick and Douglas C. Hall, “High-Efficiency Oxide-Confined Ridge Waveguide Laser with Nearly Symmetric Output Beam,” LEOS 2006: The 19th Annual Lasers and Electro Optics Society Meeting, submitted (Montreal, Quebec -Canada, October 29-November 2, 2006).
C43.	Di Liang, Douglas C. Hall, Juno Yu-Ting Huang, Jeng-Ya Yeh, and Luke J. Mawst “High-Index-Contrast Oxide-Confined GaAsP/InGaAsN Multi-Quantum-Well Ridge Waveguide Lasers,” IEEE International Semiconductor Laser Conference, paper ThC5 (Kohala Coast, Hawaii, September 17-21, 2006).
C42.	Jusong Wang, Di Liang and Douglas C. Hall, “High-Performance Small-Radius Half-Racetrack-Ring-Resonator InAlGaAs Quantum Well Laser Diodes Fabricated via Non-Selective Wet Oxidation,” IEEE International Semiconductor Laser Conference, poster paper P5 (Kohala Coast, Hawaii, September 17-21, 2006).
C39.	Jusong Wang, Di Liang and Douglas C. Hall, “Low-Loss High-Index-Contrast AlGaAs/GaAs S-Bend Waveguide Lasers,” SPIE Great Lakes Photonics Symposium, Conference on Emerging Photonics Technologies, paper GL106-20 (Dayton, Ohio, June 12-16, 2006).
C38.	Di Liang, Jusong Wang and Douglas C. Hall, “A Novel self-aligned process to fabricate high-index-contrast ridge waveguide lasers,” SPIE Great Lakes Photonics Symposium, Conference on Emerging Photonics Technologies, paper GL106-15 (Dayton, Ohio, June 12-16, 2006).
C36.	Di Liang, Jusong Wang, Douglas C. Hall, Gregory M. Peake and Quesnell Hartmann, “High-Index-Contrast Ridge Waveguide Lasers Fabricated Via Oxygen-Enhanced Wet Thermal Oxidation,” presented at the Optoelectronics 2006 Symposium at Photonics West, paper 6133-40 (San Jose, California, January 21-26, 2006); published in Proceedings of SPIE – The International Society for Optical Engineering, vol. 6133 – Novel In-Plane Semiconductor Lasers V, edited by Carmen Mermelstein and David P. Bour, article 613312 (12 pages) (February 2006).
C34.	Di Liang, Jusong Wang and Douglas C. Hall “Oxide-Confined High Index Contrast Ridge Waveguide Curved Resonator Laser Diodes,” LEOS 2005: The 18^th Annual Lasers and Electro Optics Society Meeting, paper ThZ 3 (Sydney, Australia, October 23-27, 2005).

+ GaAs-channel MOSFETs with native oxide dielectrics

J44.	Jing Zhang, Thomas H. Kosel, Douglas C. Hall, and Patrick Fay, “Fabrication and Performance of 0.25 μm Gate Length Depletion-Mode GaAs-channel MOSFETs with Self-Aligned InAlP Native Oxide Gate Dielectric,” IEEE Electron Device Letters, vol.29, no. 2, pp. 143-145 (2008). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2008 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J37.	Y. Cao, X. Li, P. Fay, J. Zhang, T. H. Kosel and D. C. Hall, “Microwave Performance of GaAs MOSFET with Wet-Thermally-Oxidized InAlP Gate Dielectric,” IEEE Electron Device Letters, vol. 27, pp. 317-319 (2006). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2006 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J35.	Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, and D. C. Hall, X. Zhang, R. D. Dupuis, J. B. Jasinski and Z. Liliental-Weber, “Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications,” Applied Physics Letters, vol. 86, article 062105 (February 7, 2005). + More Information / Get the Article The above article may be found at Scitation. Copyright 2005 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J34.	X. Li, Y. Cao, D. C. Hall, P. Fay, B. Han, A. Wibowo and N. Pan, “GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric,” IEEE Electron Device Letters, vol. 25, pp. 772-774 (2004). + More Information / Get the Article The above article may be found at IEEE Xplore. ©2004 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J33.	X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang and R. D. Dupuis, “Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostuctures using impedance spectroscopy,” Journal of Applied Physics, vol. 95, pp. 4209-4212 (2004). + More Information / Get the Article The above article may be found at Scitation. Copyright 2004 American Institute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J28.	C. B. DeMelo, D.C. Hall, G.L. Snider, D. Xu, G. Kramer, and N. El-Zein, “High-Electron-Mobility InGaAs-GaAs Field-Effect Transistor with Thermally Oxidized AlAs Gate Insulator,” Electronics Letters, vol. 36, pp. 84-86 (2000). + More Information / Get the Article The above article was published in Electronics Letters. Copyright 2002 Institution of Electrical Engineers (IEE). Available from IET Digital Library.
C58.	Wangqing Yuan and Douglas C. Hall, "Characterization of Thin InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications," paper HH8, TMS 2010 52^nd Electronic Materials Conference, p. 92 (Notre Dame, IN, June 23-25, 2010).
C52.	Jing Zhang, Thomas H. Kosel, Patrick Fay and Douglas C. Hall, "Wet Thermal Oxides of Non-Lattice-Matched InAlP on GaAs," paper T7, TMS 2007 49^th Electronic Materials Conference, p. 76 (Notre Dame, IN, June 20-22, 2007).
C51.	J. Zhang, T.H. Kosel, D.C. Hall, and P. Fay, "Performance of Sub-micron Gate Length InAlP Native Oxide GaAs-channel MOSFETs," pp. 211-212, 65^th Device Research Conference Digest, ISBN: 1-4244-1102-5 (Notre Dame, IN, June 18-20, 2007).
C48.	(Invited) P. Fay, X. Li, Y. Cao, J. Zhang, T.H. Kosel, and D. C. Hall, “III-V MOSFETs With Native Oxide Gate Dielectrics - Progress and Promise” 2007 International Conference on Compound Semiconductor Manufacturing Technology, (Austin, TX, May 14-17, 2007). (4 pages).
C47.	(Invited) Douglas C. Hall, “Nonselective wet thermal oxidation of low-Al content and Al-free compound semiconductor alloys for lasers and MOS devices,” non-refereed invitation-only workshop presentation, WOCSEMMAD '07: The Workshop on Compound Semiconductor Materials and Devices (Savannah, Georgia, February 18-21, 2007).
C44.	Y. Cao, J. Zhang, T. H. Kosel, D. C. Hall, and P. Fay, “Microwave-Frequency InAlP-oxide/GaAs MOSFETs,” 2006 IEEE Compound Semiconductor IC Symposium, paper C.2 (San Antonio, Texas, November 12-15, 2006).
C41.	J. Zhang, Y. Cao, T.H. Kosel, R.E Cook, and D.C. Hall, “A TEM Study of Wet Oxidation of InAlP on GaAs, Microscopy & Microanalysis 2006, Annual Meeting of the Microscopy Society of America and the Microbeam Analysis Society (Chicago, Illinois, July 30-August 3, 2006).
C40.	Ying Cao, Jing Zhang, Thomas H. Kosel, Xuebing Zhang, Russell D. Dupuis, Patrick Fay, and Douglas C. Hall, “Growth of Thin InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Devices,” TMS 2006 48th Electronic Materials Conference, Late News Paper 05 (State College, PA, June 28-30, 2006). Abstract
C30.	X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang, and R. D. Dupuis, “InAlP Native Oxide/GaAs MOS Heterostructure Interface State Density Measured by Impedance Spectroscopy,” 46^th Electronic Materials Conference, paper GG4 (Notre Dame, Indiana, June 23-25, 2004). Abstract
C29.	Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, D. C. Hall, R. E. Cook, X. Zhang, and R. D. Dupuis, “Electrical Properties and Microstructure of InAlP Native Oxides for MOS Applications,” 46^th Electronic Materials Conference, paper GG3 (Notre Dame, Indiana, June 23-25, 2004). Abstract
C28.	T. H. Kosel, D. C. Hall, R. D. Dupuis, R. D. Heller and R. E. Cook, “CuPt-Type Ordering of MOCVD In_0.49Al_0.51P,” Proc. Microscopy and Microanalysis 2002, Microscopy Society of America (Quebec City, Canada, Aug. 4-8, 2002).
C26.	P. J. Barrios, D. C. Hall, U. Chowdhury, R. D. Dupuis, J. B. Jasinski, Z. Liliental-Weber, T. H. Kosel, and G. L. Snider, "Properties of InAlP Native Oxides Supporting MOS Inversion-layer Behavior," presented at the 2001 43rd Electronic Materials Conference (Notre Dame, Indiana, June 27-29, 2001). Abstract
C25.	P. J. Barrios, D. C. Hall, G. L. Snider, T. H. Kosel, U. Chowdhury and R. D. Dupuis, “Electrical properties of InAlP native oxides for GaAs-based MOS applications,” presented at the 34^th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) at the 199th Meeting of the Electrochemical Society (Washington, D.C., March 25-30, 2001); published in the Proceedings of the International Symposia: III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-Of -The-Art Program On Compound Semiconductors (SOTAPOCS XXXIV), F. Ren, D.N Buckley, S. N. G. Chu, and S. J. Pearton, eds., Pennington, N.J.: The Electrochemical Society Proceedings Volume 2001-1, pp. 258-264.
C21.	Pedro J. Barrios, Seong-Kyun Cheong, Douglas C. Hall, Nathaniel C. Crain, Gregory L. Snider, Christine B. DeMelo, Tomohiro Shibata, Bruce A. Bunker, Uttiya Chowdhury, Russell D. Dupuis, Gary Kramer, and Nada El-Zein, "Residual As and the Electrical Characteristics of AlGaAs Native Oxides for MOS Applications," 42nd Electronic Materials Conference, paper F3 (Denver, Colorado, June 21-23, 2000).
C13.	Douglas C. Hall, "Compound Semiconductor Native Oxide MOSFETs: Interface Studies," WOCSEMMAD ’99: Workshop on Compound Semiconductor Materials and Devices, invited participation (New Orleans, Louisiana, February 22-24, 1999).

+ Er-doped native oxides

J43.	M. Huang and D.C. Hall, “Enhanced 1.53 μm photoluminescence from Er-doped AlGaAs wet thermal oxides by post-oxidation implantation," Applied Physics Letters, vol. 91, no. 17, pp. 171115 (2007). + More Information / Get the Article The above article may be found at Scitation. Copyright 2007 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J32.	L. Kou, D. C. Hall, C. Strohhöfer, A. Polman, T. Zhang, R. M. Kolbas, R. Heller and R. D. Dupuis, “Er-doped AlGaAs Native Oxides: Photoluminescence Characterization and Process Optimization,” Journal of Selected Topics in Quantum Electronics, Special Issue on Optoelectronic Materials and Processing, vol. 8, pp. 880-890 (July/August 2002). + More Information / Get the Article The above article may be found at IEEE Xplore. ©2002 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J25.	L. Kou, D. C. Hall and H. Wu, “Room-temperature 1.5 µm photoluminescence of Er³⁺-doped Al_xGa_1-xAs native oxides,” Applied Physics Letters, vol. 72, pp. 3411-3413 (1998). + More Information / Get the Article The above article may be found at L. Kou et al., Appl. Phys. Lett. 72, 3411 (1998). Copyright 1998 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
C35.	(Invited) Mingjun Huang and Douglas C. Hall “Er-doped In_0.5Al_0.5P native oxides on GaAs: photoluminescence characterization and annealing optimization,” presented at the Optoelectronics 2006 Symposium at Photonics West, paper 6116-10 (San Jose, California, January 21-26, 2006); published in Proceedings of SPIE – The International Society for Optical Engineering, vol. 6116 – Optical Components and Materials III, edited by Michel J. Digonnet and Shibin Jiang, article 61160A (8 pages) (February 2006).
C33.	Mingjun Huang and Douglas C. Hall “Er-doped Wet Thermal Oxides of InAlP on GaAs for Optoelectronics Integration,” LEOS 2005: The 18^th Annual Lasers and Electro Optics Society Meeting, paper ThH 4 (Sydney, Australia, October 23-27, 2005).
C31.	M. Huang and D. C. Hall “Elimination of ErAs luminescence-quenching complexes from Er-doped AlGaAs native oxides,” 47^th Electronic Materials Conference, paper KK1 (Santa Barbara, California, June 22-24, 2005). Abstract
C11.	L. Kou, D. C. Hall, J. F. Muth, T. Zhang, and R. M. Kolbas, "Photoluminescence of Dry-Oxidized Er³⁺-doped Al_xGa_1-xAs," LEOS ’98 Conference Proceedings: IEEE Lasers and Electro-Optics Society 11th Annual Meeting, vol. 2, pp. 244-245 (Institute of Electrical and Electronics Engineers, Orlando, Florida, December 1-4, 1998).
C10.	L. Kou and D. C. Hall, "Photoluminescence of Er-doped AlGaAs native oxides," 40th Electronic Materials Conference, paper BB5 (Charlottesville, Virginia, June 24-26, 1998).
C9.	D. C. Hall, L. Kou, P. D. Wang, H. Wu, J. F. Muth, T. Zhang, and R. M. Kolbas, "Photoluminescence of Er³⁺-doped Al_xGa_1-xAs Native Oxides," LEOS ’97 Conference Proceedings: IEEE Lasers and Electro-Optics Society 10th Annual Meeting, vol. 2, pp. 105-106 (Institute of Electrical and Electronics Engineers, San Francisco, California, November 10-13, 1997).

+ Low-loss optical waveguides

J47.	C.S. Seibert, D.C. Hall, D. Liang, “Reduction of AlGaAs heterostructure high-index-contrast ridge waveguide scattering loss by sidewall smoothing through oxygen-enhanced wet thermal oxidation,” IEEE Photonics Technology Letters, vol. 22, no. 1, p. 18-20 (2010). + More Information / Get the Article The above article may be found at IEEE Xplore. © 2010 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J46.	Y. Lou, D.C. Hall, “Low-loss nonselectively oxidized Al_xGa_1-xAs heterostructure waveguides,” Applied Physics Letters, vol. 93, no. 26, p. 161108 (2008). + More Information / Get the Article The above article may be found at Scitation. Copyright 2008 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J36.	Yong Luo and Douglas C. Hall, “Non-Selective Wet Oxidation of AlGaAs Heterostructure Waveguides Through Controlled Addition of Oxygen,” IEEE J. Selected Topics in Quantum Electronics, Special Issue on Optoelectronic Materials and Processing, vol. 11, pp. 1284-1291 (2005). + More Information / Get the Article The above article may be found at IEEE Xplore. ©2005 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.
J27.	Y. Luo, D. C. Hall, L. Kou, L. Steingart, J. H. Jackson, O. Blum and H. Hou, “Oxidized Al_xGa_1-xAs heterostructure planar waveguides,” Applied Physics Letters, vol. 75, pp. 3078-3080 (1999). + More Information / Get the Article The above article may be found at Scitation. Copyright 1999 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
C53.	Christopher S. Seibert, Di Liang, Douglas C. Hall, "High-Index-Contrast AlGaAs Waveguide Scattering Loss Reduction Via Oxidation Smoothing of Sidewall Roughness" paper JTuA22 in CLEO '08: Conference on Lasers and Electro-Optics, 2008 (San Jose, California, May 6-8, 2008), OSA Technical Digest Series (Optical Society of America, Washington, D. C., 2008).
C37.	Dana C. Wheeler and Douglas C. Hall, “Optical Interference Logic in Silicon-on-Insulator Waveguides,” presented at the Optoelectronics 2006 Symposium at Photonics West, paper 6130-16 (San Jose, California, January 21-26, 2006); published in Proceedings of SPIE – The International Society for Optical Engineering, vol. 6130 – Advanced Optical and Quantum Memories and Computing III, edited by Hans J. Coufal, Zameer U. Hasan, and Alan E. Craig, article 61300G (8 pages) (February 2006).
C32.	Di Liang, Douglas C. Hall and Gregory M. Peake “Oxidation Smoothing of Sidewall Roughness in AlGaAs Heterostructure Waveguides,” LEOS 2005: The 18^th Annual Lasers and Electro Optics Society Meeting, paper TuY 4 (Sydney, Australia, October 23-27, 2005).
C27.	Y. Luo and D. C. Hall, "Deep Oxidation of AlGaAs Heterostructures for Strongly-Confined Optical Waveguides," presented at the 2001 43rd Electronic Materials Conference (Notre Dame, Indiana, June 27-29, 2001). Abstract
C23.	Y. Luo, D. C. Hall, O. Blum, R. M. Sieg, and A. A. Allerman, "Fully-Oxidized AlGaAs Heterostructures as Broadband Passive Waveguides for Photonic Circuit Integration," paper ThD2 in LEOS 2000 Conference Proceedings: IEEE Lasers and Electro-Optics Society 13th Annual Meeting, vol. 2, pp. 708-709 (Institute of Electrical and Electronics Engineers, Rio Grande, Puerto Rico, November 13-16, 2000).
C18.	Y. Luo, D. C. Hall, L. Kou, O. Blum, and H. Hou, "Optical Properties of AlxGa1-xAs Heterostructure Native Oxide Planar Waveguides," LEOS ’99 Conference Proceedings: IEEE Lasers and Electro-Optics Society 12th Annual Meeting, vol. 1, pp. 311-312 (Institute of Electrical and Electronics Engineers, San Francisco, CA, November 8-11, 1999).
C17.	Yong Luo, Douglas C. Hall, Olga Blum and Hong Hou, "Al_xGa_1-xAs Heterostructure Native Oxide Planar Waveguides" paper CTuK44 in CLEO '99: Conference on Lasers and Electro-Optics, 1999 (Baltimore, Maryland, May 23-28, 1999), OSA Technical Digest Series (Optical Society of America, Washington, D. C., 1999), pp. 139-140.
C14.	Yong Luo, Leigang Kou, Douglas C. Hall, Olga Blum and Hong Hou, "Oxidized AlGaAs Heterostructure Waveguides," American Physical Society 1999 Centennial Meeting, paper EC07.03 (Atlanta, Georgia, March 20-26, 1999).

+ Native oxide and III-V material studies

J39.	Kejia (Albert) Wang, Yu Cao, John Simon, Jing Zhang, Alexander Mintairov, James Merz, Douglas Hall, Thomas Kosel, and Debdeep Jena, “Effect of dislocation scattering on the transport properties of InN grown GaN substrates by molecular beam epitaxy," Applied Physics Letters, vol. 89, no. 16, article 162110 (2006). (3 pages) + More Information / Get the Article The above article may be found at Scitation. Copyright 2006 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J30.	S.K. Cheong, B. A. Bunker, T. Shibata, D. C. Hall, C. B. DeMelo, Y. Luo, G. L. Snider, G. Kramer and N. El-Zein, “The residual arsenic site in oxidized Al_xGa_1-xAs (x=0.96),” Applied Physics Letters, vol. 78, no. 17, pp. 2458-2460 (2001). + More Information / Get the Article The above article may be found at Scitation. Copyright 2001 AmericanInstitute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
J29.	Seong-Kyun Cheong, Bruce A. Bunker, D.C. Hall, G.L. Snider, and P. J. Barrios, “XAFS and X-ray reflectivity study of III-V compound semiconductor native oxide/GaAs interfaces,” Journal of Synchrotron Radiation, vol. 8, pp. 824-826 (2001). + More Information / Get the Article The above article may be found at S.-K. Cheong et al., J. Synchrotron Rad. 8, 824-826. Copyright 2001 International Union of Crystallography. A reprint (pdf format) of the above article may be downloaded for personal use only. Any other use requires prior permission of the author and the International Union of Crystallography.
J26.	D. C. Hall, H. Wu, L, Kou, Y.Luo, R. J. Epstein, O.Blum, H.Hou, “Refractive index and hygroscopic stability of AlxGa1-xAs native oxides,” Applied Physics Letters, vol. 75, pp. 1110-1112 (1999). + More Information / Get the Article The above article may be found at Scitation. Copyright 1999 American Institute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
C60.	Christopher S. Seibert, Jinyang Li, Wangqing Yuan, Douglas C. Hall “Oxygen-Enhanced Wet Thermal Oxidation of In_0.53Ga_0.47As,“ TMS 2011 53^rd Electronic Materials Conference, paper MM3 (Santa Barbara, CA, June 22-24, 2011). Abstract
C55.	C.S. Seibert, M. D'Souza, J.C. Shin, L.J. Mawst, D. Botez, D.C. Hall, "Native-oxide-confined mid-IR quantum cascade lasers via non-selective oxygen-enhanced wet oxidation," Proceedings of the SPIE - The International Society for Optical Engineering, vol. 7230, p. 72301O, 2009.
C54.	Jared F. Bauters and Douglas C. Hall, "Oxygen-enhanced wet thermal oxidation of GaAs," paper Q3, TMS 2008 50th Electronic Materials Conference (Santa Barbara, CA, June 25-27, 2008).
C28.	T. H. Kosel, D. C. Hall, R. D. Dupuis, R. D. Heller and R. E. Cook, “CuPt-Type Ordering of MOCVD In_0.49Al_0.51P,” Proc. Microscopy and Microanalysis 2002, Microscopy Society of America (Quebec City, Canada, Aug. 4-8, 2002).
C24.	Seong-Kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Bruce A. Bunker, Douglas C. Hall, Gregory L. Snider and Pedro J. Barrios, "Reflectivity and Reflection-mode XAFS study of the wet-thermal native oxide/GaAs interface," presented at the 2001 March Meeting of American Physical Society, paper J11.010 (Seattle, Washington, March 12-16, 2001), published in the Bulletin of the Americal Physical Society, vol. 46, no. 1 (2001).
C22.	Bruce A. Bunker, Seong-kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Douglas C. Hall, Gregory L. Snider and Pedro J. Barrios, "Reflectivity and Reflection-mode XAFS study of Ill-V compound native oxide/GaAs Interface," 11th International Conference on X-ray Absorption Fine Structure (XAFS XI), paper B6-04 (Ako, Japan, July 27-31, 2000).
C21.	Pedro J. Barrios, Seong-Kyun Cheong, Douglas C. Hall, Nathaniel C. Crain, Gregory L. Snider, Christine B. DeMelo, Tomohiro Shibata, Bruce A. Bunker, Uttiya Chowdhury, Russell D. Dupuis, Gary Kramer, and Nada El-Zein, "Residual As and the Electrical Characteristics of AlGaAs Native Oxides for MOS Applications," 42nd Electronic Materials Conference, paper F3 (Denver, Colorado, June 21-23, 2000).
C20.	Yong Luo, Douglas C. Hall, Olga Blum, and Hong Hou, "Effects of Mixed Carrier Gas in Wet Thermal Oxidation of AlGaAs," 42nd Electronic Materials Conference, paper F2 (Denver, Colorado, June 21-23, 2000).
C19.	Seong-kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Bruce A. Bunker, Douglas C. Hall, and Gregory L. Snider, "X-ray reflectivity and reflection-mode XAFS study of III-V compound native oxide/GaAs interfaces," 2000 March Meeting of American Physical Society, paper I19.02 (Minneapolis, Minnesota, March 20-24, 2000).
C16.	Leigang Kou, Douglas C. Hall, Tong Zhang and Robert M. Kolbas, "Spectroscopy of Rare-Earth-Doped AlGaAs Native Oxides," American Physical Society 1999 Centennial Meeting, paper ZC32.11 (Atlanta, Georgia, March 20-26, 1999).
C15.	Seong-Kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Bruce A. Bunker, Douglas C. Hall, Gregory L. Snider and Christine B. DeMelo, "Reflection Mode XAFS studies of III-V compound native oxide/GaAs Interfaces," American Physical Society 1999 Centennial Meeting, paper XC23.09 (Atlanta, Georgia, March 20-26, 1999).
C12.	Y. Luo, L. Kou, H. Wu, D. C. Hall, O. Blum, and H. Hou, "Prism Coupling Measurements of Al_xGa_1-xAs Native Oxides," LEOS ’98 Conference Proceedings: IEEE Lasers and Electro-Optics Society 11th Annual Meeting, vol. 2, pp. 240-241 (Institute of Electrical and Electronics Engineers, Orlando, Florida, December 1-4, 1998).
C11.	L. Kou, D. C. Hall, J. F. Muth, T. Zhang, and R. M. Kolbas, "Photoluminescence of Dry-Oxidized Er³⁺-doped Al_xGa_1-xAs," LEOS ’98 Conference Proceedings: IEEE Lasers and Electro-Optics Society 11th Annual Meeting, vol. 2, pp. 244-245 (Institute of Electrical and Electronics Engineers, Orlando, Florida, December 1-4, 1998).
C10.	L. Kou and D. C. Hall, "Photoluminescence of Er-doped AlGaAs native oxides," 40th Electronic Materials Conference, paper BB5 (Charlottesville, Virginia, June 24-26, 1998).
C9.	D. C. Hall, L. Kou, P. D. Wang, H. Wu, J. F. Muth, T. Zhang, and R. M. Kolbas, "Photoluminescence of Er³⁺-doped Al_xGa_1-xAs Native Oxides," LEOS ’97 Conference Proceedings: IEEE Lasers and Electro-Optics Society 10th Annual Meeting, vol. 2, pp. 105-106 (Institute of Electrical and Electronics Engineers, San Francisco, California, November 10-13, 1997).
C8.	H. Wu, D. C. Hall, O. Blum, H. Hou, B. E. Hammons, "Prism coupling measurements of the refractive index of Al_xGa_1-xAs native oxides," presented at the Workshop on Native Oxides of Compound Semiconductors, San Antonio, Texas, February 19-20, 1997.

Last updated July 2011 by:

Dr. Douglas C. Hall

Associate Professor

260 Fitzpatrick Hall of Engineering

Department of Electrical Engineering

University of Notre Dame

Notre Dame, IN 46556-5637

Phone: (574) 631-8631

Fax: (574) 631-4393

e-mail: dhall@nd.edu

Current Research Topics

J48.

The above article was published in Electronics Letters. Copyright 2010 Institution of Electrical Engineers (IEE). Available from IET Digital Library. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.

J45.

The above article may be found at Scitation. Copyright 2008 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J42.

The above article may be found at IEEE Xplore. © 2007 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J41.

The above article may be found at Scitation. Copyright 2007 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J40.

The above article may be found at IEEE Xplore. © 2007 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J38.

The above article was published in Electronics Letters. Copyright 2006 Institution of Electrical Engineers (IEE). From IET Digital Library.

J31.

The above article was published in Electronics Letters. Copyright 2002 Institution of Electrical Engineers (IEE). Available from IET Digital Library.

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J44.

The above article may be found at IEEE Xplore. © 2008 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J37.

The above article may be found at IEEE Xplore. © 2006 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J35.

The above article may be found at Scitation. Copyright 2005 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J34.

The above article may be found at IEEE Xplore. ©2004 IEEE.A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J33.

The above article may be found at Scitation. Copyright 2004 American Institute of Physics. A reprint(pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J28.

The above article was published in Electronics Letters. Copyright 2002 Institution of Electrical Engineers (IEE). Available from IET Digital Library.

C58.

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J43.

The above article may be found at Scitation. Copyright 2007 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J32.

The above article may be found at IEEE Xplore. ©2002 IEEE.A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J25.

C35.

C33.

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C9.

J47.

The above article may be found at IEEE Xplore. © 2010 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J46.

The above article may be found at Scitation. Copyright 2008 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J36.

The above article may be found at IEEE Xplore. ©2005 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J27.

The above article may be found at Scitation. Copyright 1999 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

C53.

C37.

C32.

C27.

C23.

The above article was published in Electronics Letters. Copyright 2006 Institution of Electrical Engineers (IEE).
From IET Digital Library.

The above article may be found at IEEE Xplore. ©2004 IEEE.
A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

The above article may be found at IEEE Xplore. ©2002 IEEE.
A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.