Journal Publications

  1. W. Chakraborty, K. Aabrar, J. Gomez, R. Saligram, A. Raychowdhury, P. Fay, and S. Datta, “Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS,” IEEE J. on Exploratory Solid-State Computational Devices and Circuits, vol. 7, no. 2, pp. 184-192, DOI: 10.1109/JXCDC.2021.313114, 2021.

  2. Y. Shi, Y. Deng, J. Ren, P. Li, P. Fay, and L. Liu, “Computational Analysis of Novel High Performance Optically Controlled RF Switches for Reconfigurable Millimeterwave-to-THz Circuits,” OSA Continuum, vol. 4, no. 10, pp. 2642-2654, DOI: 10.1364/OSAC.437912, 2021.
  3. J. Moon, B. Grabar, J. Wong, D. Chuong, E. Arkun, D. Morales, P. Chen, C. Malek, D. Fanning, N. Venkatesan, and P. Fay, “Power Scaling of Graded-Channel GaN HEMTs with Mini-Field-Plate T-gate and 156 GHz ft,” IEEE Electron Dev. Lett., vol. 42, no. 6, pp. 796-799, DOI: 10.1109/LED.2021.3075926, 2021.
  4. Y. Deng, Y. Shi, P. Fay, and L. Liu, “Computational analysis of optically controlled reconfigurable terahertz mesh filters using mesa arrays,” Microwave and Optical Tech. Lett., vol. 63, no. 7, pp. 1972-1977, DOI: 10.1002/mop.32833, 2021.
  5. L. Cao, Z. Zhu, G. Harden, H. Ye, J. Wang, A. Hoffman, and P. Fay, “Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN,” IEEE Trans. Electron Devices, vol. 68, no. 3, pp. 1228-1234, DOI: 10.1109/TED.2021.3054355, 2021.
  6. R. Aylwin, G. Silva-Oelker, C. Jerez-Hanckes, and P. Fay, “Optimization methods for achieving high diffraction efficiency with perfect electric conducting gratings,” J. Optical Society of America A, vol. 37, no. 8, pp. 1316-1326, DOI: 10.1364/JOSAA.394204, 2020.
  7. J. Moon, J. Wong, B. Grabar, M. Antcliffe, P. Chen, E. Arkun, I. Khalaf, A. Corrion, J. Corrion, J. Chappell, N. Venkatesan, and P. Fay, “360 GHz fmax Graded-channel AlGaN/GaN HEMTs for mm-wave low-noise applications,” IEEE Electron Device Lett., vol. 41, no. 8, pp. 1173-1176, DOI: 10.1109/LED.2020.3005337, 2020.
  8. J. S. Moon, R. Grabar, J. Wong, M. Antcliffe, P. Chen, E. Arkun, I. Khalaf, A. Corrion, J. Chappell, N. Venkatesan, and P. Fay, “High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency > 70% at 30 GHz,” Electronics Lett., vol. 56, no. 13, pp. 678-680, DOI: 10.1049/el.2020.0281, 2020.
  9. Y. Ding, J. Ren, Y. Shi, Y. C. Wang, L. J. Cheng, P. Fay, and L. Liu, “Advanced photo-induced substrate-integrated waveguides using pillar-array structures for tunable and reconfigurable THz circuits,” Opt. Express, vol. 28, no. 5, pp. 7259-7273, DOI: 19.1364/EO.381775, 2020.
  10. A. Chaney, H. Turski, K. Nomoto, Z. Hu, J. Encomendero, S. Rouvimov, T. Orlova, P. Fay, A. Seabaugh, H. Xing, and D. Jena, “Gallium Nitride Tunneling Field-Effect Transistors Exploiting Polarization Fields,” Appl. Phys. Lett., vol. 116, no. 7, pp 1-5, DOI: 10.1063/1.5132329, 2020.
  11. C. Wu, H. Ye, N. Shaju, J. Smith, B. Grisafe, S. Datta, and P. Fay, “Hf0.5Zr0.5O2 Based Ferroelectric Gate HEMTs (FeHEMTs) with Large Threshold Voltage Tuning Range,” IEEE Electron Device Lett., vol. 41, no. 3, pp. 337-340, DOI: 10.1109/LED/2020.2965330, 2020.
  12. A. Ebadi-Shahrivar, P. Fay. D. Love, and B. Hochwald, “Determining Electromagnetic Exposure Compliance of Multi-Antenna Devices in Linear Time,” IEEE Trans. Antennas and Propagation, vol. 67, no. 12, pp. 7585-7596, DOI: 10.1109/TAP.2019.2925135, 2019.
  13. C. Wu, H. Ye, B. Grisafe, S. Datta, and P. Fay, “Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High-Electron-Mobility-Transistor Heterostructures,” Physica Status Solidi A, pp. 1-6, DOI: 10.1002/pssa.201900717, 2019.
  14. L. Cao, H. Ye, J. Wang, and P. Fay, “Avalanche Multiplication Noise in GaN p-n Junctions Grown on Native GaN Substrates,” Physica Status Solidi B, pp. 1-6, DOI: 10.1002/pssb.201900373, 2019.
  15. G. Silva-Oelker, C. Jerez-Hanckes, and P. Fay, “High-temperature tungsten-hafnia optimized selective thermal emitters for thermophotovoltaic applications,” J. Quantitative Spectroscopy and Radiative Transfer, vol. 231, pp. 61-68, DOI: 10.1016/j.jqsrt.2019.04.008, 2019.
  16. T. Ciarkowski, N. Allen, E. Carlson, R. McCarthy, C. Youtsey, J. Wang, P. Fay, J. Xie, and L. Guido, “Connection Between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE,” Materials, vol. 12, no. 15, pp. 2455-1 -7, DOI 10.3390/ma12152455, 2019.
  17. A. Ebadi-Shahrivar, P. Fay, D. J. Love, and B. M. Hochwald, “Determining Electromagnetic Exposure Compliance of Multi-Antenna Devices in Linear Time,” IEEE Trans. on Antennas and Propagation, pp. 1-3, DOI 10.1109/TAP.2019.2925135, 2019.
  18. J. Encomendero, V. Protasenko, Berardi Sensale-Rodriguez, P. Fay, R. Rana, D. Jena, and H. Xing, “Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures,” Phys. Rev. Appl., vol. 11, pp. 034032-1-13, DOI: 10.1103/PhysRevApplied.11.034032, 2019.
  19. T. Ameen, H. Ilatikhameneh, P. Fay, A. Seabaugh, R. Rahman, and G. Klimeck, “Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs,” IEEE Trans. Electron Dev., vol. 66, no. 1, pp. 736-742, DOI: 10.1109/TED.2018.2877753, 2019.
  20. J. Wang, R. McCarthy, C. Youtsey, R. Reddy, J. Xie, E. Beam, L. Guido, L. Cao, and P. Fay, “Ion-implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates,” Physica Status Solidi A, DOI: 10.1002/pssa.201800652, 2018.
  21. J. Ren, Y. Deng, Y. Shi, A. Kannegulla, Y. Wang, P. Fay. L. Cheng, and L. Liu, “Optically controlled reconfigurable terahertz waveguide filters based on photo-induced electromagnetic band gap structures using mesa arrays,” OSA Continuum, vol. 1, no. 4, pp. 1429-1436, DOI: 10.1364/OSAC.1.001429, 2018.
  22. J. Wang, R. McCarthy, C. Youtsey, R. Reddy, J. Xie, E. Beam, L. Guido, L. Cao, and P. Fay, “High Voltage Vertical GaN p-n Diodes by Epitaxial Lift-Off from Bulk GaN Substrates,” IEEE Electron Dev. Lett., vol. 39, no. 11, pp. 1716-1719, DOI: 10.1109/LED.2018.2868560, 2018.
  23. G. Silva-Oelker, C. Jerez-Hanckes, and P. Fay, “Study of W/HfO2 grating selective thermal emitters for thermophotovoltaic applications,” Optics Express, vol. 26, no. 22, pp. A929-936, DOI: 10.1364/OE.26.00A929, 2018.
  24. L. Cao, C. F. Lo, H. Marchand, W. Johnson, and P. Fay, “Low-Loss Coplanar Waveguides on GaN-on-Si Substrates,” IEEE Microwave and Wireless Components Lett., vol. 28, no. 10, pp. 861-863, DOI 10.1109/LMWC.2018.2867084, 2018.
  25. J. Wang, L. Cao, J. Xie, E. Beam, R. McCarthy, C. Youtsey, and P. Fay, “High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination,” Appl. Phys. Lett., vol. 113, pp. 023502-1 -5, DOI 10.1063/1.5035267, 2018.
  26. L. Cao, J. Wang, G. Harden, H. Ye, R. Stillwell, A. J. Hoffman, and P. Fay, “Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates,” Appl. Phys. Lett., vol. 112, no. 26, pp. 262103-1 -5, DOI 10.1063/1.5031785, 2018.
  27. H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. Chalker, M. Charles, K. Chen, N. Chowdhury, R. Chu, C. De Santi, M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P Fay, J. Freedsman, L Guido,O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M. Uren, M. Van Hove, D. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, and Y. Zhang, “The 2018 GaN power electronics roadmap,” J. Physics D: Appl. Phys, vol. 51, no. 16, 163001 pp. 1-48, DOI 10.1088/1361-6463/aaaf9d, 2018.
  28. J. Ren, Z. Jiang, P. Fay, J. Hesler, C. Tong, and L. Liu, “High-Performance WR-4.3 Optically Controlled Variable Attenuator with 60-dB Range,” IEEE Microwave and Wireless Components Lett., vol. 28, no. 6, p. 512-514, DOI 10.1109/LMWC.2018.2823589, 2018.
  29. H. Lu, P. Paletti, W. Li, P. Fay, T. Ytterdal, and A. Seabaugh, “Tunnel FET Analog Benchmarking and Circuit Design,” IEEE J. Exploratory Solid-State Computational Devices and Circuits, vol. 4, pp. 19-25, DOI: 10.1109/JXCDC.2018.2817541, 2018.
  30. J. Encomendero, R. Yan, A. Verma, S. M. Islam, V. Protasenko, S. Rouvimov, P. Fay, D. Jena, and H. Xing, “Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2,” Appl. Phys. Lett., vol. 112, no. 10, p. 103101-1 -5, DOI: 10.1063/1.5016414, 2018.
  31. S. Rahman, Z. Jiang, M. Shams, P. Fay, and L. Liu, “A G-Band Monolithically Integrated Quasi-Optical Zero-Bias Detector Based on Heterostructure Backward Diodes Using Submicrometer Airbridges,” IEEE Trans. Microwave Theory and Techniques, vol. 66, no. 4, p. 2010-2017, DOI: 10.1109/TMTT.2017.2779133, 2018.
  32. W. Li, M. Brubaker, B. Spann, K. Bertness, and P. Fay, “GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 184-187, DOI: 10.1109/LED.2017.2785785, 2018.
  33. G. Silva-Oelker, R. Aylwin, C. Jerez-Hanckes, and P. Fay, “Quantifying the Impact of Random Surface Perturbations on Reflective Gratings,” IEEE Trans. Antennas and Propagation, vol. 66, p. 838-847, DOI: 10.1109/TAP.2017.2780902, 2018.
  34. J. Encomendero, F. Faria, S. M. Islam, V. Protasenko, S. Rouvimov, B. Sensale-Rodriguez, P. Fay, D. Jena, and H. Xing, “New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes,” Phys. Rev. X, vol. 7, p. 041017-1-12, DOI: 10.1103/PhysRevX.7.041017, 2017.
  35. C. Lund, B. Romanczyk, M. Catalano, Q. Wang, W. Li, D. DiGiovanni, J. Kim, P. Fay, S. Nakamura, S. DenBaars, U. Mishra, and S. Keller, “Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices,” J. Appl. Phys., vol. 121, p. 185707-1-9, DOI: 10.1063/1.4983300, 2017.
  36. J. Fernandez-Berni, M. Niemier, X. S. Hu, H. Lu, W. Li, P. Fay, R. Carmona-Galan, and A. Rodriguez-Vazquez, “TFET-based well capacity adjustment in active pixel sensor for enhanced high dynamic range,” Electronics Lett., vol. 53, pp. 622-624, DOI: 10.1049/el.2016.4548, 2017.
  37. J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,” Appl. Phys. Lett., vol. 110, pp. 173403-1 -5, DOI: 10.1063/1.4982250, 2017.
  38. C. Youtsey, R. McCarthy, R. Reddy, K. Forghani, A. Xie, E. Beam, J. Wang, P. Fay, T. Ciarkoski, E. Carlson, and L. Guido, “Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching,” Phys. Stat. Solidi B, vol. 254, no. 8, pp. 1600774-1-6, DOI 10.1002/pssb.201600774, 2017.
  39. M. I. Shams, Z. Jiang, S. Rahman, L. J. Cheng, J. Hesler, P. Fay, and L. Liu, “A 740-GHz Dynamic Two-Dimensional Beam-Steering and Forming Antenna Based on Photo-Induced Reconfigurable Fresnel Zone Plates,” IEEE Trans. Terahertz Sci. Tech., vol. 7, no. 3, pp. 310-319, DOI: 10.1109/TTHZ.2017.2681431, 2017.
  40. L. Liu, S. Rahman, Z. Jiang, W. Li, and P. Fay, “Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices,” Proc. IEEE, vol. 105, no. 6, pp. 1020-1034, DOI 10.1109/JPROC.2016.2636245, 2017.
  41. A. Crippa, R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. Orlov, P. Fay, R. Laieville, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi, and X. Jehl, “Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry,” ACS Nano Lett., vol. 17, pp. 1001-1006, DOI: 10.1021/acs.nanolett.6b04354, 2017.
  42. Y. Zhang, G. Vigil, L. Cao, A. Khan, D. Bernirschke, T. Ahmed, P. Fay, and S. Howard, “Saturation compensated fluorescence lifetime imaging microscopy,” Optics Lett., vol. 42, no. 1, pp. 155-158, DOI: 10.1364/OL.42.000155, 2017.
  43. Z. Jiang, M. I. Shams, L. Cheng, P. Fay, J. Hesler, C. Tong, and L. Liu, “Investigation and Demonstration of WR-4.3 Optically-Controlled Waveguide Attenuator,” IEEE Trans. THz Science Technol., vol. 7, no. 1, pp. 20-26, 2017.
  44. H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh, “Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise,” IEEE J. Exploratory Solid-State Computational Devices and Circuits, vol. 2, pp. 20-27, DOI: 10.1109/JXCDC.2016.2582204, 2016.
  45. P. Fay, T. Lu, J. Kulick, and G. H. Bernstein, “Ultra-Wide Bandwidth Inter-Chip Interconnects for Heterogeneous Millimeter-Wave and THz Circuits,” J. Infrared, Millimeter, and Terahertz Waves, DOI 10.1007/s10762-016-0278-5, 2016.
  46. W. Li, L. Cao, C. Lund, S. Keller, and P. Fay, “Performance projection of III-nitride heterojunction nanowire tunneling field-effect transistors,” Phys. Status Solidi A, vol. 213, pp. 905-908, DOI 10.1002/pssa.201532564, 2016.
  47. W. Li, P. Fay, T. Yu, and J. Hoyt, “Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunnel field-effect transistors,” Electronics Lett., vol. 52, no. 10, pp. 842-844, DOI: 10.1049/el.2016.0328, 2016.
  48. S. Rahman, Z. Jiang, P. Fay, and L. Liu, “Integration and fabrication of high-performance Sb-based heterostructure backward diodes with submicron-scale airbridges for terahertz detection,” J. Vacuum Science and Technol., B, vol. 34, no. 4, p. 041330, DOI 10.1116/1.4953551, 2016.
  49. M. Qi, K. Nomoto, M. Zhu, Z. Hu, Y. Zhao, V. Protasenko, B. Song, X. Yan, G. Li, J. Verma, S. Bader, P. Fay. H. Xing, and D. Jena, “High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy,” Appl. Phys. Lett., vol. 107, pp. 232101-1 -4, DOI 10.1063/1.4936891, 2015.
  50. C. Lorenz, S. Hemour, W. Li, Y. Xie, J. Gauthier, P. Fay, and K. Wu, “Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting with Heterojunction Backward Tunnel Diodes,” IEEE Trans. Microwave Theory and Techniques, vol. 61, no. 12, pp. 4544-4555, DOI 10.1109/TMTT.2015.2495356, 2015.
  51. L. Ohlsson, P. Fay, and L. E. Wernersson, “Picosecond dynamics in a millimeter-wave RTD-MOSFET wavelet generator,” Electronics Lett., vol. 51, no. 21, pp. 1671-1673, DOI 10.1049/el.2015/1329, 2015.
  52. X. Yan, W. Li, S. M. Islam, K. Pourang, H. Xing, P. Fay, and D. Jena, “Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions,” Appl. Phys. Lett., vol. 107, pp. 163504-1-5, DOI 10.1063/1.4934269, 2015.
  53. W. Chen, B. Chen, A. Holmes, and P. Fay, “Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes,” Electronics Lett., vol. 51, no. 18, pp. 1260-1262, DOI 10.1049/el.2015.2191, 2015.
  54. Z. Jiang, Y. Lu, Y. Tan, Y. He, M. Povolostkyi, T. Kubis, A. Seabaugh, P. Fay, and G. Klimeck, “Quantum Transport in AlGaSb/InAs TFETs with Gate Field In-Line with Tunneling Direction,” IEEE Trans. Electron Devices, vol. 62, no. 8, pp. 2445-2449, DOI 10.1109/TED.2015.2443564, 2015.
  55. W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, “Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors,” IEEE J. Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 28-34, DOI 10.1109/JXCDC.2015.2426433, 2015.
  56. P. Fay, O. Aktas, D. Bour, and I. C. Kizilyalli, “Experimental observation of RF avalanche gain in GaN-based PN junction diodes,” Electronics Lett., vol. 51, no. 13, pp. 1009-1010, DOI 10.1049/el.2015.1551, 2015.
  57. S. Rahman, Z. Jiang, H. Xing, P. Fay, and L. Liu, “Lens-coupled folded-dipole antennas for terahertz detection and imaging,” IET Microwaves, Antennas, and Propagation, DOI 10.1049/iet-map.2014.0415, 2015.
  58. M. A. Khan, Q. Zheng, D. Kopp, W. Buckhanan, J. Kulick, P. Fay, A. Kriman, and G. H. Bernstein, “Thermal Cycling Study of Quilt Packaging,” J. Electronic Packaging, vol. 137, no. 2, pp. 021008-1 -7, DOI 10.1115/1.4029245, 2015.
  59. Y. Zhao, W. Chen, W. Li, M. Zhu, Y. Yu, B. Song, J. Encomendero, B. Sensale-Rodriguez, H. Xing, and P. Fay, “Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases,” Appl. Phys. Lett., vol. 105, p. 173508-1-5, 2014.
  60. Y. Yue, X. Yan, W. Li, H. Xing, D. Jena, and P. Fay, “Faceted Sidewall Etching of n-GaN on Sapphire by Photo-electro-chemical Wet Processing,” J. Vacuum Science and Technol. B, vol. 32, p. 061201-1 -5, 2014.
  61. Z. Jiang, S. Rahman, J. Hesler, P. Fay, and L. Liu, “Design and Characterisation of a 200 GHz Tunable Lens-Coupled Annular-Slot Antenna with 50 GHz Tuning Range,” IET Microwaves, Antennas, and Propagation, vol. 8, no. 11, pp. 842-848, 2014.
  62. M. I. B. Shams, Z. Jiang, S. Rahman, J. Qayyum, L. J. Cheng, H. G. Xing, P. Fay, and L. Liu, “Approaching real-time terahertz imaging with photo-induced coded apertures and compressed sensing,” Electronics Lett., vol. 50, no. 11, pp. 801-803, 2014.
  63. B. Villis, A. Orlov, S. Barraud, M. Vinet, M. Sanquer, P. Fay, G. Snider, and X. Jehl, “Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry,” Appl. Phys. Lett., vol. 104, no. 23, p. 1-4, DOI 10.1063/1.4883228, 2014.
  64. P. Zhao, A. Verma, J. Verma, H. G. Xing, P. Fay, and D. Jena, “GaN Heterostructure Barrier Diodes (HBD) Exploiting Polarization-Induced ∂-doping,” IEEE Electron Device Lett., vol. 35, no. 6, pp. 615-617, 2014.
  65. A. Kannegulla, Z. Jiang, S. Rahman, M. Shams, P. Fay, H. Xing, L. Cheng, and L. Liu, “Coded-Aperture Imaging Using Photo-Induced Reconfigurable Aperture Arrays for Mapping Terahertz Beams,” IEEE Trans. Terahertz Science and Technol., vol. 4, no. 3, DOI 10.1109/TTHZ.2014.2307163, pp. 321-327, 2014.
  66. G. Karbasian, P. Fay, H. Xing, A. Orlov, and G. Snider, “Chemical mechanical planarization of gold,” J. Vacuum Science and Technol. A, vol. 32, no. 2, DOI 10.1116/1.4863275, pp. 021402-021402-5, 2014.
  67. Q. Zheng, D. Kopp, M. A. Khan, P. Fay, A. M. Kriman, and G. H. Berntsein, “Investigation of Quilt Packaging Interchip Interconnect with Solder Paste,” IEEE Trans. Components, Packaging, and Manufacturing Technol., vol. 4, no. 3, pp. 400-407, 2014.
  68. B. Song, B. Sensale-Rodriguez, R. Wang, J. Guo, Z. Hu, Y. Yue, F. Faria, M. Schuette, A. Ketterson, E. Beam, P. Saunier, X. Gao, S. Guo, P. Fay, D. Jena, and H. Xing, “Effect of Fringing Capacitances on the RF Performance of GaN HEMTs with T-gates,” IEEE Trans. Electron Devices, vol. 61, no. 3, pp. 747-754, 2014.
  69. P. Fay, D. Kopp, T. Lu, D. Neal, G. H. Berstein, and J. Kulick, “Ultrawide Bandwidth Chip-to-Chip Interconnects for III-V MMICs,” IEEE Microwave and Wireless Components Lett., vol. 24, no. 1, pp. 29-31, 2014.
  70. Z. Jiang, S. M. Rahman, P. Fay, J. L. Hesler, and L. Liu, “Tunable 200 GHz lens-coupled annular-slot antennas using Schottky varactor diodes for all-electronic reconfigurable terahertz circuits,” Electronics Lett., vol. 49, no. 23, pp. 1428-1430, 2013.
  71. Y. Zhao, A. Wibowo, C. Youtsey, and P. Fay, “Inductively Coupled Plasma Etching of Through-Cell Vias in III-V Multi-Junction Solar Cells using SiCL4/Ar,” J. Vacuum Science and Technol. B, vol. 31, 06FF05, pp. 1-5, doi: 10.1116/1.4822015, 2013.
  72. M. Schuette, A. Ketterson, B. Song, E. Beam, T. M. Chou, M. Pilla, H. Q. Tserng, X. Gao, S. Guo, P. Fay, H. Xing, and P. Saunier, “Gate-Recessed Integrated E/D GaN HEMT Technology with fT/fmax > 300 GHz,” IEEE Electron Device Lett., vol. 34, no. 6, pp. 741-743, 2013.
  73. M. A. Khan, J. Kulick, D. Kopp, P. Fay, A. Kriman, and G. H. Bernstein, “Design and Robustness of Quilt Packaging Superconnect,” accepted for publication in J. Microelectronics and Electronic Packaging, 2013.
  74. R. Wang, G. Li, G. Karbasian, J. Guo, B. Song, Y. Yue, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing, “Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz,” IEEE Electron Device Lett., vol. 34, no. 3, pp. 378-380, 2013.
  75. Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, B. Song, X. Gao, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. Xing, “Ultrascaled InAlN/GaN HEMTs with ft of 400 GHz,” accepted for publication in Japanese J. Appl. Phys., 2013.
  76. B. Tiwari, P. Fay, G. H. Bernstein, A. Orlov, and W. Porod, “Effect of Read-Out Interconnects on Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime,” IEEE Trans. Nanotechnology, vol. 12, no. 2, pp. 270-275, 2013.
  77. B. Sensale-Rodriguez, L. Liu, P. Fay, D. Jena, and H. G. Xing, “Power Amplification at Thz via Plasma Wave Excitation in RTD-Gated HEMTs,” IEEE Trans. Terahertz Science and Technol., vol. 3, no. 2, pp. 200-206, 2013.
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  92. G. Zhou, Y. Lu, R. Li, Q. Zhang, W. S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, J. M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Vertical InGaAs/InP Tunnel FETs with Tunneling Normal to the Gate,” IEEE Electron Device Lett., vol. 32, no. 11, pp. 1516-1518, 2011.
  93. R. Wang, G. Li, J. Verma, T. Zimmermann, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing, “Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors,” Appl. Phys. Express, vol. 4, p. 096502, 2011.
  94. Z. Zhang, M. Kelly, D. Jena, R. Rajavel, P. Deelman, and P. Fay, “A Physics-Based Tunneling Model for Sb-Heterostructure Backward Diode Millimeter-Wave Detectors,” Int’l. J. of High Speed Electronics and Systems, vol. 20, no. 3, pp. 589-596, 2011.
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  96. L. Liu, J. Hesler, R. M. Weikle II, T. Wang, P. Fay, and H. Xing, “A 570-630 GHz Frequency Domain Terahertz Spectroscopy System based on a Broadband Quasi-Optical Zero Bias Schottky Diode Detector,” Int’l. J. of High Speed Electronics and Systems, vol. 20, no. 3, pp. 626-638, 2011.
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  100. D. S. Lee, J. W. Chung, H. Wang, X. Gao, S. Guo, P. Fay, and T. Palacios, “245-GHz InAlN/GaN HEMTs with Oxygen Plasma Treatment,” IEEE Electron Device Lett., vol. 32, no. 6, pp. 755-757, 2011.
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  103. R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing, “Gate-Recessed Enhancement-mode InAlN/AlN/GaN HEMTs with 1.9 A/mm Drain Current Density ant 800 mS/mm Transconductance,” IEEE Electron Device Lett., vol. 31, no. 12, pp. 1383-1385, 2010.
  104. X. Xing and P. Fay, “Enhancement-Mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs with Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz,” IEEE Electron Device Lett., vol. 31, no. 11, pp. 1214-1216, 2010.
  105. G. Li, T. Zimmerman, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. G. Xing, and D. Jena, “Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work Function Engineering,” IEEE Electron Device Lett., 2010.
  106. J. A. Bean, B. Tiwari, G. Szakmany, G. H. Bernstein, P. Fay, and W. Porod, “Antenna length and polarization response of antenna-coupled MOM diode infrared detectors,” Infrared Physics and Technol., vol. 53, pp. 182-185, 2010.
  107. J. Su, H. Yang, P. Fay, W. Porod, and G. H. Bernstein, “A surface micromachined offset-drive method to extend the electrostatic travel range,” J. Micromech. Microeng., vol. 20, 015004, pp. 1-10, 2010.
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  112. S. Jha, X. Song, S. E. Babcock, T. F. Kuech, D. Wheeler, Bin Wu, P. Fay, and A. Seabaugh, “Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy,” J. Crystal Growth, vol. 310, no. 23, pp. 4772-4775, 2008.
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  117. H. Xing, D. Deen, Y. Cao, T. Zimmermann, P. Fay, and D. Jena, “MBE-Grown Ultra-shallow AlN/GaN HFET Technology,” accepted for publication in ECS Transactions - Wide-Bandgap Semiconductor Materials and Devices, vol. 11, 2007.
  118. Y. Tang, I. Amlani, A. O. Orlov, G. L. Snider, and P. Fay,  “Operation of Single-Walled Carbon Nanotube as a Radio Frequency Single Electron Transistor,”Nanotechnology, vol. 18, 445203, pp. 1-5, 2007.
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  120. G. H. Bernstein, Q. Liu, M. Yan, Z. Sun, D. Kopp, W. Porod, G. Snider, and P. Fay, “Quilt Packaging: High-Density, High-Speed Interchip Communications,” IEEE Trans. on Advanced Packaging, vol. 30, no. 4, pp. 731-740, 2007.
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  143. J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, and I. Adesida, “The Impact of a Large Bandgap Drift Region in Long-Wavelength Metamorphic Photodiodes,” IEEE Photonics Technol. Lett., vol. 13, no. 10, pp. 1097-1099, 2001.
  144. P. Fay, J. Lu, Y. Xu, G. H. Bernstein, A. Gonzalez, P. Mazumder, D. H. Chow, and J. N. Schulman, “Digital Integrated Circuit Using Integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs,” Electronics Lett, vol. 37, no. 12, pp. 758-759, 2001.
  145. J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, and I. Adesida, “Long Wavelength Metamorphic Double Heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As Photodiodes on GaAs Substrates,” Electronics Lett., vol. 37, no. 11, pp. 707-708, 2001.
  146. P. Fay, Lu Jiang, Y. Xu, G. H. Bernstein, D. H. Chow, J. N. Schulman, H. L. Dunlap, and H. J. De Los Santos, “Fabrication of Monolithically-Integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb Resonant Interband Tunneling Diodes,” IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1282-1284, 2001.
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  150. A. Mahajan, M. Arafa, P. Fay, C. Caneau, and I. Adesida, "Enhancement-Mode High Electron Mobility Transistors (E-HEMT's) Lattice-Matched to InP," IEEE Trans. Electron Devices, vol. 45, no. 12, pp. 2422-2429, 1998.
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  155. M. Hannan, R. Grundbacher, P. Fay, I. Adesida, R.W. Giannetta, C.J. Wagner, and M. R. Melloch,"Fabrication and Transport Study of Finite Lateral Superlattices," J. Vac. Sci. Technol. B, vol. 15, no. 6, pp. 2821-2824, 1997.
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  157. W. Wohlmuth, J.-W. Seo, P. Fay, C. Caneau, and I. Adesida, "A High-Speed ITO-InAlAs-InGaAs Schottky-Barrier Photodetector," IEEE Photonics Technol. Lett., vol. 9, no. 10, pp. 1388-1390, 1997.
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  164. W. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, and I. Adesida, "InGaAs Metal-Semiconductor-Metal Photodetectors with Engineered Schottky Barrier Heights," Appl. Phys. Lett., vol. 69, no. 23, pp. 3578-3580, 1996.
  165. R. Panepucci, E. Reuter, P. Fay, C. Youtsey, J. Kluender, C. Caneau, J. J. Coleman, S. G. Bishop, and I. Adesida, "Quantum Dots Fabricated in InP/InGaAs by Free Cl2 Gas Etching and Metalorganic Chemical Vapor Deposition Regrowth," J. Vac. Sci. Technol. B, vol. 14, no. 6, pp. 3641-3645, 1996.
  166. M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida, "DC and RF Performance of 0.25 µm p-Type SiGe MODFET," IEEE Electron Device Lett., vol. 17, no. 9, pp. 449-451, 1996.
  167. W. Wohlmuth, P. Fay, and I. Adesida, "Dark Current Suppression in GaAs Metal-Semiconductor-Metal Photodetectors," IEEE Photon. Technol. Lett., vol. 8, no. 8, pp. 1061-1063, 1996.
  168. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "18.5-GHz Bandwidth Monolithic MSM/MODFET Photoreceiver for 1.55-µm Wavelength Communication Systems," IEEE Photon. Technol. Lett., vol. 8, no. 5, pp. 679-681, 1996.
  169. A. Mahajan, P. Fay, C. Caneau, and I. Adesida, "High Performance Enhancement Mode High Electron Mobility Transistors (E-HEMTs) Lattice Matched to InP," Electron. Lett., vol. 32, no. 11, pp. 1037-1038, 1996.
  170. A. Xiang, W. Wohlmuth, P. Fay, S. M. Kang, and I. Adesida, "Modeling of InGaAs MSM Photodetector for Circuit-Level Simulation," J. Lightwave Technol., vol. 14, no. 5, pp. 716-723, 1996.
  171. M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida, "High Speed P-Type SiGe Modulation-Doped Field-Effect Transistors," IEEE Electron Device Lett., vol. 17, no. 3, pp. 124-126, 1996.
  172. W. Wohlmuth, P. Fay, C. Caneau, and I. Adesida, "Low Dark Current, Long Wavelength Metal-Semiconductor-Metal Photodetectors," Electron. Lett., vol. 32, no. 3, pp. 249-250, 1996.
  173. P. Fay, S. Agarwala, C. Scafidi, and I. Adesida, "Reactive Ion Etching-induced Damage in InAlAs/InGaAs Heterostructure Field-Effect Transistors Processed in HBr Plasma," J. Vac. Sci. Technol. B, vol. 12, no. 6, pp. 3322-3326, 1994.
  174. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "15 GHz Monolithic MODFET-MSM Integrated Photoreceiver Operating at 1.55 µm Wavelength," Electron. Lett., vol. 31, no. 9, pp. 755-756, 1995.
  175. M. Arafa, K. Ismail, P. Fay, J. Chu, B. Meyerson, and I. Adesida, "High Transconductance p-Type SiGe Modulation-Doped Field-Effect Transistor," Electron. Lett., vol. 31, no. 8, pp. 680-681, 1995.
  176. N. Pan, J. Elliot, H. Hendriks, L. Aucoin, P. Fay, and I. Adesida, "InAlAs/InGaAs High Electron Mobility Transistors on Low Temperature InAlAs Buffer Layers by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., vol. 66, no. 2, pp. 212-214, 1995.
  177. R. Grundbacher, P. Fay, and I. Adesida, "Fabrication and Characterization of InAlAs/InGaAs Striped-Channel Modulation-Doped Field Effect Transistors," J. Vac. Sci. Technol. B, vol. 12, no. 6, pp. 3750-3754, 1994.
  178. P. Fay, R. T. Brockenbrough, G. Abeln, P. Scott, S. Agarwala, I. Adesida, and J. Lyding, "Scanning Tunneling Microscope Stimulated Oxidation of Silicon (100) surfaces," J. Appl. Phys, vol. 75, no. 11, pp. 7545-7549, 1994.

Invited Lectures and Addresses

  1. P. Fay, “Directions in III-N Devices for Wireless Communications and Beyond,” Qorvo R&D, Richardson TX, November 2021.
  2. P. Fay, “Advanced III-N Devices for 5G and Beyond,” IEEE EDS Distinguished Lecture, National Institute of Technology Silchar, Assam India, June 2021.
  3. P. Fay, “Electronics: Where We’ve Been, and Where We’re Going,” Introduction to Engineering Program, Notre Dame, IN, June 2021.
  4. P. Fay, “Advances in III-N Devices for 5G and Beyond, Plus Impact Ionization in GaN,” Ohio State University Electrical and Computer Engineering seminar, March 25, 2021.
  5. P. Fay, “Advances in III-N Devices for 5G and Beyond,” IEEE Electron Devices Society webinar, broadcast live March 10, 2021; archived at https://eds.ieee.org/webinars.html
  6. P. Fay, “RF Performance and Promise of Graded-Channel GaN HEMTs,” Analog Devices Inc., Wilmington, MA, January 2021.
  7. P. Fay, “III-N Nanowire Devices for Low Power Applications,” Berlin IEEE EDS Distinguished Lecture, Technische Hochschule Mittelhessen, Berlin, Germany / online, November 2020.
  8. P. Fay, “Adventures in Simulation of III-N Devices,” HRL Laboratories, LLC, Malibu, CA September 2020.
  9. P. Fay, “Advanced III-N Devices for 5G and Beyond,” Delhi IEEE EDS Distinguished Lecture, University of Delhi, New Delhi India, May 2020.
  10. P. Fay, “Advances in III-N Devices for 5G and Beyond,” New South Wales IEEE EDS Distinguished Lecture, Univ. of Technology Syndey, Sydney, Australia, May 2020.
  11. P. Fay, “Advanced III-N Devices for 5G and Beyond,” Coimbatore IEEE EDS Distinguished Lecture, Karunya University, Coimbatore India, May 2020.
  12. P. Fay, “Vertical GaN Devices and Epitaxial Lift-Off Processing for High-Performance Power Device Performance,” IEEE Northern Virginia/Washington DC Nanotechnology Council Meeting, Washington, DC, May 2020.
  13. P. Fay, “Advances in III-N Devices for 5G and Beyond,” 38th Annual RIT Microelectronic Engineering Conference, Rochester, NY, April 2020.
  14. P. Fay, “Advances in III-N Devices for 5G and Beyond,” University of Bristol, Bristol, UK, March 2020.
  15. P. Fay, C. Wu, B. Grisafe, S. Datta, Y. Cao, J. Xie, E. Beam “Ferroelectric-Gate GaN HEMTs for RF Applications,” Workshop on Compound Semiconductor Materials and Devices, Palm Springs, CA, February 2020.
  16. P. Fay, J. Wang, L. Cao, J. Xie, E. Beam, R. McCarthy, R. Reddy, and C. Youtsey, “Layer Transferred Vertical GaN Power Devices,” Frontiers of Excellence in Wide and Ultrawide Bandgap Semiconductors and Electronic Systems, Indian Institute of Technology – Bombay, Mumbai, India, December 2019. Plenary talk.
  17. P. Fay, “Advances in III-N Materials, Devices, and Integration for High Performance Systems,” Peking University, Beijing, China, October 2019.
  18. P. Fay, J. Wang, L. Cao, A. Xie, E. Beam, R. McCarthy, R. Reddy, and C. Youtsey, “Epitaxial Lift-Off of GaN and Related Materials for Device Applications,” Electrochemical Society (ECS) Meeting, Atlanta, GA, October 2019.
  19. J. S. Moon, J. Wong, B. Grabar, M. Antcliffe, P. Chen, A. Corrion, E. Arkun, I. Khalaf, S. Kim, and P. Fay, “High Speed and Linear Graded-Channel GaN FETs,” Electrochemical Society (ECS) Meeting, Atlanta, GA, October 2019.
  20. P. Fay, “Advances in III-N Devices for 5G and Beyond,” IEEE Electron Devices and Solid-State Circuits Societies Colloquium, American Center for Physics, College Park, MD, October 2019.
  21. P. Fay, “Emerging Concepts in III-N Devices and Integration for High Speed and Power Applications,” SCIOCS, Inc., Hitachi City, Japan, August 2019.
  22. P. Fay, “Advances in III-N Devices for Power and Internet of Things Applications,” Universidad Adolfo Ibanez, Santiago, Chile, May 2019.
  23. P. Fay, “Advances in III-N Devices and Integration Technologies for RF and Power Applications,” Pontificia Universidad Catolica de Chile, Santiago, Chile, May 2019.
  24. P. Fay, “III-N Devices and Integration for Millimeter-Wave and Power Applications,” Analog Devices, Inc., Wilmington, MA, April 2019.
  25. P. Fay, “Advances in III-N Devices and Integration for High-Speed and Power Applications,” Stanford University and SystemX Alliance, Palo Alto, CA, April 2019.
  26. P. Fay, “High-Performance III-N Devices and Integration Technologies for Advanced System Applications,” IEEE Electron Devices Society webinar, broadcast live February 20, 2019; archived at https://eds.ieee.org/webinars.html
  27. P. Fay, J. Wang, L. Cao, J. Xie, E. Beam, R. McCarthy, R. Reddy, and C. Youtsey, “High-Performance GaN Power Electronics using Epitaxial Lift-Off Processing,” Workshop on Compound Semiconductor Materials and Devices, Jacksonville, FL, February 2019.
  28. P. Fay, “High-Performance III-N Devices and Integration Technologies for Advanced System Applications,” Peking University, Beijing, December 2018.
  29. P. Fay, “Advances in III-N Devices and Integration for Millimeter-Wave Applications,” Keysight Technologies, Santa Rosa, CA, December 2018.
  30. P. Fay, H. Ye, W. Li, M. Brubaker, and K. Bertness, “GaN Nanowire FETs for Low-Power Applications,” International Workshop on Nitride Semiconductors, Kanazawa, Japan, November 2018.
  31. P. Fay, J. Wang, L. Cao, W. Li, R. McCarthy, R. Reddy, C. Youtsey, C. F. Lo, H. Marchand, W. Johnson, M. Brubaker, and K. Bertness, “Prospects for High Performance RF Interconnects and Functional Integration Using GaN on Silicon,” IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, June 2018.
  32. A. Kummel, W. Li, A. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn, S. Madisetti, J. Wu, P. Asbeck, S. Oktyabrsky, and P. Fay, “Passivation of High K/GaN Interfaces for GaN Tunnel FETs,” Electrochemical Society (ECS) Meeting, Seattle, WA, May 2018.
  33. P. Fay, “Nanoelectronics: It’s More Fun Than It Sounds,” DoD Starbase Indiana STEM outreach program, January 2018.
  34. P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, H. Xing, D. Jena, S. Keller, G. Klimeck, M. Brubaker, B. Spann, and K. Bertness, “III-N Nanowire Devices for Low Power Applications,” International Workshop on the Physics of Semiconductor Devices, New Delhi, India, December 2017.
  35. P. Fay, “Electronics: Past, Present, and Wild Guesses About the Future,” Introduction to Engineering Program, Notre Dame, IN, June 2017.
  36. P. Fay and D. Jena, “Low-Power Electronic Switches with Gallium Nitride Transistors,” SRC Starnet-ACCEL eWorkshop Series, April 2017.
  37. P. Fay, “Novel Heterostructure Devices for Ultra-Scaled Logic,” American Physical Society Meeting, New Orleans, March 2017.
  38. P. Fay, W. Li, D. Digiovanni, L. Cao, K. Pourang, H. Ilatikhameneh, F. Chen, T. Ameen, R. Rahman, G. Klimeck, C. Lund, S. Keller, S. M. Islam, A. Chaney, Y. Cho, and D. Jena, “III-N Heterostructure Devices for Low-Power Logic,” China Semiconductor Technology International Conference, Shanghai, March 2017.
  39. P. Fay, W. Li, D. DiGiovanni, A. Chaney, S. M. Islam, D. Jena, M. Brubaker, K. Bertness, “III-N Nanowire FETs for Low-Power Applications,” Workshop on Compound Semiconductor Materials and Devices, Safety Harbor, FL, February 2017.
  40. L. Liu, Z. Jiang, M. Shams, S. Rahman, and P. Fay, “Dynamically Tunable and Reconfigurable Antennas for Advanced THz Sensing and Imaging,” Int’l Union of Radio Science National Radio Science Meeting (URSI-NRSM), Boulder, CO, Jan. 2017.
  41. P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, H. Ilatikahameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, G. Klimeck, M. Brubeker, K. Bertness, “Tunneling in III-N Heterostructures for Low-Power Electronics,” American Vacuum Society Int’l Symp., Nashville, TN, Nov. 2016.
  42. P. Fay, “Nanoscale Devices and Integration for Low-Power Computation, Energy Harvesting, and Imaging,” Mathematical and Computational Engineering Seminar, Pontifical Universidad de Chile, Santiago, Chile, October 2016.
  43. P. Fay. J. Wang, C. Youtsey, R. McCarthy, R. Reddy, T. Ciarkowski, E. Carlson, L. Guido, A. Xie, and E. Beam, “GaN-Based Epitaxial Lift-off for Device Applications,” International Workshop on Nitrides, Orlando, FL, Oct. 2016.
  44. P. Fay, W. Li, D. Digiovanni, L. Cao, K. Pourang, H. Ilatikhameneh, F. Chen, T. Ameen, R. Rahman, G. Klimeck, C. Lund, S. Keller, S. M. Islam, A. Chaney, Y. Cho, and D. Jena, “III-N Heterojunctions for Tunnel Field-Effect Transistors,” Steep Transistors Workshop, Ecole Polytechnique Federal de Lausanne, Lausanne, Switzerland, Sept. 2016.
  45. P. Fay, W. Li, Y. Cao, and Y. Zhao, “Beyond Power: III-N Devices for Low-Power Systems, Millimeter-Wave Applications, and More,” IEEE SBmicro Conf., Belo Horizonte, Brazil, August 2016.
  46. P. Fay, “Advances in III-V Heterostructure Devices and Integration for Millimeter-Wave and THz Sensing and Imaging,” IEEE Electron Device Society Distinguished Lecture, Federal Univ. of Minas Gerais – UFMG, Belo Horizonte, Brazil, August, 2016.
  47. P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, and G. Klimeck, “Novel III-N Heterostructure Devices for Low-Power Logic and More,” IEEE Int’l. Conf. on Nanotechnology, Sendai, Japan, August 2016.
  48. P. Fay, W. Li, S. Rahman, Z. Jiang, and L. Liu, “Tunneling-Based Heterostructure Devices for Millimeter-Wave and THz Sensing,” National Aerospace and Electronics Conf., Dayton, OH, July 2016.
  49. P. Fay, “GaN Devices and Technology,” short course at Semicon West, San Francisco, CA, July 2016.
  50. P. Fay, “Nanoscale Devices and Integration for Low-Power Computation, Energy Harvesting, and Imaging,” Great Lakes Science Boot Camp for Librarians, Notre Dame, IN, July 2016.
  51. P. Fay, W. Li, S. Rahman, Z. Jiang, and L. Liu, “Advances in III-V Heterostructure Devices and Integration for Millimetre-Wave and THz Sensing and Imaging,” Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE), Aveiro, Portugal, June 2016.
  52. P. Fay, “III-N Heterostructure Devices for Low-Power Logic and More,” 14th Annual Nanotechnology Workshop, Center for Nanoscale Science and Technology, Urbana, IL, May 2016.
  53. P. Fay, “GaN-Based Electronics for RF, Power, and More,” SunEdison Semiconductor, St. Peters, MO, April 2016.
  54. L. Liu, M. I. B. Shams, Z. Jiang, S. Rahman, J. L. Hessler, L. J. Cheng, and P. Fay, “Tunable and reconfigurable THz devices for advanced imaging and adaptive wireless communication,” SPIE Optics and Photonics Conf., San Diego, CA, August 2016.
  55. P. Fay, W. Li, K. Pourang, and D. Jena, “GaN-based Nanowire Tunnel FETs for Low Power Electronics,” Workshop on Compound Semiconductor Materials and Devices, Tucson, AZ February 2016.
  56. A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. C. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, “Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels,” Proc. Int’l Electron Devices Meeting, pp. 35.6.1-35.6.4, Washington DC, 2015.
  57. P. Fay, W. Li, L. Cao, X. Yan, K. Pourang, M. Islam, S. Saima, J. Huang, T. Armin, H. Ilatikhameneh, R. Rahman, G. Klimeck, C. Lund, S. Keller and D. Jena, “III-N Heterojunction Tunnel Field-Effect Transistors,” Steep Transistors Workshop, Notre Dame, IN, October 2015.
  58. P. Fay, “Advances in III-V Heterostructure Devices and Integration for Millimeter-Wave and THz Sensing and Imaging,” Univ. of Michigan, Ann Arbor, MI, April 2015.
  59. P. Fay, W. Li, T. Yu, and J. Hoyt, “Interband Tunneling FETs for High-Sensitivity Millimeter-Wave and THz Detection,” Workshop on Compound Semiconductor Materials and Devices, Charleston, SC, February 2015.
  60. P. Fay, “Advances in III-V Heterostructure Devices and Integration for Millimeter-Wave and THz Sensing and Imaging,” Ecole Polytechnique de Montreal Centre for Research in Radiofrequency Electronics Seminar, Montreal, Canada, September 2014.
  61. P. Fay, Y. Xie, Y. Zhao, Z. Jiang, S. Rahman, H. Xing, B. Sensale-Rodriguez, and L. Liu, “Emerging Electronic Devices for THz Sensing and Imaging,” SPIE Optics and Photonics Conf., vol. 9199, San Diego, CA, August 2014.
  62. P. Fay, W. Li, J. Wang, X. Yan, and D. Jena, “Prospects for III-N Interband Tunnel FETs for Low-Power Applications,” Workshop on Compound Semiconductor Materials and Devices, San Antonio, TX, February 2014.
  63. P. Fay, “GaN Devices and Technology,” Skyworks Solutions, Inc., Irvine, CA, January 2014.
  64. P. Fay, Y. Lu, G. Zhou, T. Vasen, Y. Xie, M. I. Shams, Z. Zhang, H. Xing, and A. Seabaugh, “Interband Tunneling in InAs/AlGaSb Heterostructures: Devices for Low-Power Logic and THz Applications,” International Semiconductor Device Research Symposium, Bethesda, MD, December 2013.
  65. H. G. Xing, G. Zhou, M. O. Li, Y. Lu, R. Li, M. Wistey, P. Fay, D. Jena, and A. Seabaugh, “Tunnel FETs with tunneling normal to the gate,” Berkeley Symp. on Energy Efficient Electronic Systems, Berkeley, CA, October 2013.
  66. P. Fay, “GaN Devices and Technology,” IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Bordeaux, France, September 2013.
  67. P. Fay, G. Zhou, Y. Lu, R. Li, T. Vasen, A. Seabaugh, and H. Xing, “III-V Tunnel FETs for Energy Efficient Logic,” Workshop on Compound Semiconductor Devices and Integrated Circuits – Europe, Warnemunde, Germany, May 2013.
  68. P. Fay, “Advances in III-V Heterostructure Devices for Millimeter-Wave and THz Applications,” Raytheon Multifunction RF System Technology Network Symposium, Tuscon, AZ, April 2013.
  69. P. Fay, “High Performance III-V Electronic and Optoelectronic Devices for RF & Millimeter-Wave Applications,” Agilent Technologies, Santa Clara, CA, March 2013.
  70. P. Fay, Z. Zhang, Y. Xie, M. I. Shams, L. Liu, and S. Rahman, “Heterostructure Backward Diodes for Sensing and Imaging,” Workshop on Compound Semiconductor Materials and Devices, New Orleans, LA, 2013.
  71. P. Fay, “III-V Compound Semiconductor Devices for Millimeter-Wave and THz Applications,” Dept. of Electrical and Information Technology, Lund University, Lund, Sweden, June 2012.
  72. P. Fay, Y. Lu, H. Xing, and A. Seabaugh, “Design Considerations in III-V Tunnel FETs,” Workshop on Compound Semiconductor Materials and Devices, Napa, CA, 2012.
  73. P. Fay, Z. Zhang, Y. Xie, and M. I. Shams, “Heterostructure Backward Diode Detectors for Millimeter-wave through THz Detection and Imaging,” URSI National Radio Science Meeting, Boulder, CO, 2012.
  74. A. Seabaugh, S. Chae, P. Fay, W. Hwang, T. Kosel, Q. Liu, Y. Lu, T. Vasen, M. Wistey, G. Xing, G. Zhou, and Q. Zhang, “III-V Tunnel Field-Effect Transistors,” Electro-Chemical Society Meeting, Boston, MA, October 2011.
  75. P. Fay, “High Performance Heterostructure Backward Diode Detectors,” SPIE Defense and Security Conf., Orlando, FL, April 2011.
  76. P. Fay and Z. Zhang, “Advances in High Sensitivity Millimeter-Wave-THz Detectors” Workshop on Compound Semiconductor Materials and Devices, Savannah, GA, February 2011.
  77. L. Liu, T. Wang, A. Biswas, Z. Cai, F. Watanabe, A. S. Biris, M. Lieberman, G. H. Bernstein, H. Xing, and P. Fay, “Narrow Spectral Features of Cellulose Nanocomposities Chracterized by Frequency Domain Terahertz Spectroscopy,” Proc. Int’l. Conf. on Composites/Nano Engineering, Anchorage, AK, July 2010.
  78. W. Porod, J. A. Bean, Z. Sun, B. Tiwari, G. Szakmany, G. H. Bernstein, and P. Fay, “Nanostructure Antennas for the LW-IR Regime,” Proc. Int’l Microwave Symp. 2010, paper TH3E, Anaheim, CA, May 2010.
  79. P. Fay and X. Xing, “InGaAs Channel MOSFETs with InAlP-Oxide Gate Dielectric,” Workshop on Compound Semiconductor Materials and Devices, Newport Beach, CA, February 2010.
  80. P. Fay, “High-Speed Devices and Integration for Wireless and Sensing Applications,” Laboratory for Physical Sciences, Univ. of Maryland, College Park, MD, October 2009.
  81. A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J. -M. Kuo, P. Pinsukanjana, H. Zhu, and Y. -C. Kao, “Low-Subthreshold-Swing Tunnel Transistors,” Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2009.
  82. P. Fay, “Advances in Interconnects and Packaging for High-Performance and Sensing Applications,” Univ. of Illinois at Urbana-Champaign, Urbana, IL, April 2009.
  83. A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J. -M. Kuo, P. Pinsukanjana, H. Zhu, and Y. -C. Kao, “Low-Subthreshold-Swing Tunnel Transistors,” Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2009.
  84. G. H. Bernstein, J. Kulick, D. Kopp, J. Bonath, J. Brockman, W. Buckhanan, S. Dai, P. Fay, M. Khan, A. Kriman, Y. Lee, C. Liang, M. Niemier, M. Padberg, D. Rinzler, R. Savino, and G. Snider, “Quilt Packaging - a Quasi-Monolithic Way to Merge Heterogeneous Technologies and Scales,” 6th Annual Conference, Foundations of Nanoscience (FNANO), Snowbird, UT, April 2009.
  85. P. Fay, “Advances in High-Speed Devices for Wireless and Sensing Applications,” Univ. of Virginia, Charlottesville, VA, March 2009.
  86. P. Fay, N. Su, and Z. Zhang, “Antenna-Coupled Heterostructure Diodes for Millimeter-Wave and THz Imaging,” Workshop on Compound Semiconductor Materials and Devices, Ft. Myers, FL, February 2009.
  87. P. Fay, G. H. Bernstein, and W. Porod, "Antenna-Coupled Tunnel-Diode Nanosensors for Millimeter-Wave Through Infrared Imaging," Army Research Lab, Adelphi, MD, August 2008.
  88. P. Fay, "Advances in High-Speed Devices and Packaging for Wireless and Sensing Applications," Tyndall National Institute, Cork, Ireland, July 2008.
  89. P. Fay, “Advances in High-Speed Devices for Wireless and Sensing Applications,” Dept. of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, October 2007.
  90. P. Fay, “Advances in High-Speed Devices for Wireless and Sensing Applications,” TriQuint Semiconductor, Richardson, TX, September 2007.
  91. P. Fay, “Heterostructure Backward Diodes for Millimeter-Wave and THz Detection,” Sandia National Lab, Albuquerque, NM, August 2007.
  92. G. H. Bernstein, Q. Liu, G. Snider, A. Tong, W. Buckhanan, J. Kulick, D. Kopp, and P. Fay, “Quilt Packaging: A New Paradigm in Interchip Communications,” Sandia National Lab, Albuquerque, NM, August 2007.
  93. P. Fay, G. H. Bernstein, Q. Liu, G. Snider, A. Tong, W. Buckhanan, J. Kulick, and D. Kopp, “Quilt Packaging – A New Approach to Integration for High Performance Systems,” DARPA Exascale Computing Meeting, Atlanta, GA, July 2007.
  94. P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall, “III-V MOSFETs with Native Oxide Gate Dielectrics – Progress and Promise,” 2007 International Conference on Compound Semiconductor Manufacturing Technology, paper 12.1, pp. 227-230, Austin, TX, May 2007.
  95. G. H. Bernstein and P. Fay, “Quilt Packaging: A New Paradigm in Interchip Communications,” Rockwell-Collins, Cedar Rapids, IA, March 2007.
  96. P. Fay “Heterostructure Backward Diodes for Millimeter Wave and THz Radar Applications,” Through-Barrier Imaging Technologies Workshop, Argonne National Lab, Argonne, IL, January 2007.
  97. G. H. Bernstein and P. Fay, “Quilt Packaging: A New Paradigm in Interchip Communications,” MA/COM Corp, Lowell, MA, January 2007.
  98. P. Fay, invited expert panelist “”Compound Semiconductor MOSFETs: Fact or Fiction?”, IEEE Compound Semiconductor Integrated Circuits Symposium, 2006.
  99. G. H. Bernstein, Q. Liu, Z. Sun, A. Tong, G. Snider, and P. Fay, “Quilt Packaging: A New Paradigm in Interchip Communications,” Raytheon Corporation, Santa Barbara, CA, February, 2006.
  100. P. Fay and D. C. Hall, “Compound Semiconductor Native Oxides: Materials and Devices,” presented at RFMD Inc., Greensboro, NC, 12/14/05.
  101. A. Seabaugh, Q. Liu, S. Sutar, Q. Zhang, W. Zhao, Y. Yan, D. Wheeler, B. Wu, S. Kabeer, Z. Racz, and P. Fay, “Low Power, High Speed, and Mixed-Signal Tunneling Device Technology,” Int. COE Workshop on Nano Processes and Devices and their Applications, pp. 37-38, Nagoya Univ., Japan, 2005.
  102. P. Fay, “Advances in Devices for Wireless and Optoelectronic Systems,” presented at the University of Michigan, Ann Arbor, MI, 7/19/05.
  103. G. H. Bernstein and P. Fay, “Quilt Packaging:  A New Paradigm in Heterogeneous Integration,” Cray, Inc., Chippewa Falls, WI, December, 2004.
  104. P. Fay, “Photodetectors and Receivers for Telecommunications,” presented at Spectrolab, Inc., Sylmar, CA, August 2001.
  105. P. Fay "Photodetectors and Photoreceivers for High Speed Telecommunications," presented at Filtronic Solid State, Inc., Santa Clara, CA, June 2001.
  106. P. Fay "Photodetectors and Photoreceivers for High Speed Telecommunications," presented at TriQuint Semiconductor, Inc., Dallas, TX, November 2000.
  107. P. Fay and B. Walvoord, “A New Integrated Laboratory Course for Microwave Circuit Design and Measurements,” Proc. Intl. Conf. on Engineering and Computer Education, Rio de Janeiro, August 1999.
  108. P. Fay, C. Caneau, and I. Adesida, “High-Speed MSM-HEMT and PIN-HEMT Monolithic Photoreceivers,” Proc. Intl. Microwave and Optoelectronics Conf., Rio de Janeiro, August 1999.

Conference Presentations and Publications

  1. S. Rho, R. Stillwell, P. Fay, K. Ludwig, T. O’Sullivan, “Optically-enhanced wireless breast lesion localization device for use during lumpectomy,” SPIE Photonics West, San Francisco, CA, January 2022.
  2. Y. Duan and P. Fay, “Design of Three-Zone Junction Termination Extensions for Vertical GaN PN Diodes,” Lester Eastman Conference on High-Performance Devices, Notre Dame, IN, August 2021.
  3. Z. Zhu, L. Cao, and P. Fay, “DC and Large Signal Simulations of GaN-Based Schottky Barrier IMPATT Diodes,” Lester Eastman Conference on High-Performance Devices, Notre Dame, IN, Agusut 2021.
  4. N. Poluri, N. Venkatesan, M. De Souza, and P. Fay, “Influence of a graded channel HEMT on the performance of Class BJF-1 amplifiers for 5G applications,” Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, June 2021.
  5. M. Asadi, L. Li, W. Zhao, K. Nomoto, P. Fay, H. Xing, D. Jena, and J. Hwang, “SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits above 110 GHz,” accepted for presentation, Int’l Microwave Symp., Atlanta, GA, June 2021.
  6. Y. Deng, Y. Shi, P. Li, P. Fay, and L. Liu, “Photo-Induced Coded-Aperture Imaging at 740 GHz using Mesa Arrays for Achieving Subwavelength Resolution,” accepted for presentation, Int’l Microwave Symp., Atlanta, GA June 2021.
  7. W. Chakraborty, K. Aabrar, J. Gomez, R. Saligram, A. Raychowdhury, P. Fay, and S. Datta, “Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495 GHz and fMAX=497 GHz,” VLSI Symposium on VLSI Technology, Kyoto, Japan, 2021 (online).
  8. W. Chakraborty, M. San Jose, J. Gomez, A. Saha, K. Aabrar, P. Fay, S. Gupta, and S. Datta, “Higher-k Zirconium Doped Hafnium Oxide (HZO) Trigate Transistors with Higher DC and RF Performance and Improved Reliability,” VLSI Symposium on VLSI Technology, Kyoto, Japan, 2021 (online).
  9. L. Cao, Z. Zhu, G. Harden, H. Ye, J. Wang, A. Hoffman, and P. Fay, “Temperature Dependent Measurement of GaN Impact Ionization Coefficients,” 2021 Compound Semiconductor Manufacturing Technology Conf., Orlando, FL, May 2021 (online).
  10. P. Li, Y. Shi, Y. Deng, P. Fay, and L. Liu, “A G-Band Reconfigurable Waveguide-Based Bandstop Filter Enabled by High-Performance Optically Controlled RF Switches,” IEEE Wireless and Microwave Technology Conf. (WAMICON), April 2021 (online).
  11. L. Cao, H. Ye, J. Wang, and P. Fay, “Measurement of Impact Ionization in GaN and Implications for Device Performance,” Government Microcircuit Applications and Critical Technologies Conf. (Gomactech), March 2021 (online).
  12. C. Wu, B. Grisafe, S. Datta, Y. Cao, J. Xie, E. Beam, and P. Fay, “Microwave Performance of Ferroelectric-Gated GaN HEMTs for RF Switch Applications,” Government Microcircuit Applications and Critical Technologies Conf. (Gomactech), March 2021 (online).
  13. R. Engelhardt, J. Kulick, T. Lu, E. Varga, J. Kapala, S. Azizov, C. Ortega, W. Heuner, J. Timler, P. Fay, and D. Padrubny, “A Study of Quilt Packaging Reliability for Military Ground, Shipboard, and Aerospace Environments,” Government Microcircuit Applications and Critical Technologies Conf. (Gomactech), March 2021 (online).
  14. N. Venkatesan, J. Moon, J. Wong, B. Grabar, M. Antcliffe, P. Chen, E. Arkun, I. Khalaf, D. Fanning, and P. Fay, “RF Performance of GaN-Based Graded-Channel HEMTs,” IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symp., Monterey, CA, November 2020 (online).
  15. C. Wu, J. Smith, S. Datta, Y. Cao, J. Xie, E. Beam, and P. Fay, “Microwave performance of Ferroelectric-Gated GaN HEMTs,” IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symp., Monterey, CA, November 2020 (online).
  16. J. Moon, M. Antcliff, E. Arkun, J. Chappell, P. Chen, C. Dao, A Corrion, R. Grabar, J. Wong, N. Venkatesan, and P. Fay, “High-Speed GaN HEMTs with State-of-the-art Linearity and Efficiency,” Int’l Microwave Symp., Los Angeles, CA, June 2020.
  17. P. Fay, “Advances in III-N Devices for 5G and Beyond,” 38th Annual RIT Microelectronic Engineering Conference, Rochester, NY, April 2020.
  18. C. Wu, H. Ye, J. Smith, B. Grisafe, S. Datta, Y. Cao, J. Xie, E. Beam, and P. Fay, “Ferroelectric-Gate GaN-Channel HEMTs for Reconfigurable RF,” Government Microcircuit Applications and Critical Technologies Conf. (Gomactech), San Diego, CA, March 2020.
  19. N. Venkatesan, G. Oelker, and P. Fay, “Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave,” IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symp., Nashville, TN, November 2019.
  20. P. Fay, J. Wang, L. Cao, A. Xie, E. Beam, R. McCarthy, R. Reddy, and C. Youtsey, “Epitaxial Lift-Off of GaN and Related Materials for Device Applications,” Electrochemical Society (ECS) Meeting, Atlanta, GA, October 2019.
  21. J. S. Moon, J. Wong, B. Grabar, M. Antcliffe, P. Chen, A. Corrion, E. Arkun, I. Khalaf, S. Kim, and P. Fay, “High Speed and Linear Graded-Channel GaN FETs,” Electrochemical Society (ECS) Meeting, Atlanta, GA, October 2019.
  22. H. Ye, L. Cao, W. Li, M. Brubaker, K. Bertness, and P. Fay, “Low-Frequency Noise in Modulation Doped GaN Nanowire MOSFETs,” Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, August 2019.
  23. L. Cao, H. Ye, J. Wang, and P. Fay, “Performance Projections of W-Band GaN IMPATT Diodes Based on Measured Impact Ionization Characteristics,” Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, August 2019.
  24. Y. Shi, J. Ren, Y. Deng, P. Fay, and L. Liu, “High-Performance Optically-Controlled RF Switches for Advanced Reconfigurable Millimeterwave-to-THz Circuits,” Int’l Microwave Conf. on Hardware and Systems for 5G and Beyond, Atlanta GA, August 2019. Best student paper award.
  25. L. Cao H. Ye, J. Wang, P. Fay, “W-band GaN IMPATT Diodes for High Power Millimeter-Wave Generation,” National Aerospace and Electronics Conf., Dayton, OH, July 2019.
  26. J. Ren, Y. Shi, Y. Deng, J. Hessler, P. Fay, and L. Liu, “Development of Optically Controlled Tunable/Reconfigurable Terahertz Waveguide Circuits/Components For Advanced Wireless Communications,” National Aerospace and Electronics Conf., Dayton, OH, July 2019.
  27. A. Ebadi-Shahrivar, P. Fay, B. Hochwald, and D. Love, “Codebook Requirements for Estimating Multi-Antenna SAR in Linear Time,” IEEE Int’l Symp. Antennas and Propagation/USNC-URSI Radio Science Meeting, Altanta, GA, July 2019.
  28. C. Wu, H. Ye, B. Grisafe, S. Datta, and P. Fay, “Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT Heterostructures,” International Conf. on Nitride Semiconductors (ICNS), Seattle, WA, July 2019.
  29. C. Wu, N. Shaju, H. Ye, B. Grisafe, S. Datta, and P. Fay, “Polarization Recovery Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT Heterostructures,” Device Research Conference, Ann Arbor, MI, June 2019.
  30. L. Cao, J. Wang, H. Ye, and P. Fay, “Experimental Demonstration of Avalanche Noise in GaN PN Junctions Grown on Native GaN Substrates,” Int’l Symp. On Compound Semiconductors, paper ThC2-6, Nara, Japan, May 2019.
  31. P. Fay, J. Wang, L. Cao, R. McCarthy, R. Reddy, C. Youtsey, and J. Xie, “Epitaxial Lift-Off for Vertical GaN Power Devices,” Government Microcircuit Applications and Critical Technologies Conf. (Gomactech), Albuquerque, NM, March 2019.
  32. J. Moon, J. Wong, B. Grabar, M. Antcliffe, P. Chen, A. Corrion, E. Arkun, S. Kim, J. Tai, J. Campbell, G. Silva-Oelker, and P. Fay, “Novel mmW GaN HEMTs with State-of-the-Art Linearity and Efficiency,” Government Microcircuit Applications and Critical Technologies Conf. (Gomactech), Albuquerque, NM, March 2019.
  33. L. Cao, J. Wang, H. Ye, and P. Fay, “Characterization of Impact Ionization and Low Frequency Noise in GaN Avalanche Photodiodes Grown on Native GaN Substrates,” Workshop on Compound Semiconductor Materials and Devices, Jacksonville, FL, February 2019.
  34. P. Fay, H. Ye, W. Li, M. Brubaker, and K. Bertness, “GaN Nanowire FETs for Low-Power Applications,” International Workshop on Nitride Semiconductors, Kanazawa, Japan, November 2018.
  35. J. Lu, L. Nordin, O. Dominguez, L. Cao, J. Wang, P. Fay, D. Wassermann, and A. J. Hoffmann, “Far-Infrared Emission from an Electrically-Injected Semiconductor Device,” IEEE Photonics Conf., Reston, VA, September 2018.
  36. Y. Shi, S. Rahman, J. Ren, Y. Deng, P. Fay, and L. Liu, “An Integrated Polarization-Resolved Quasi-Optical THz Detector Based on Heterostructure Backward Diodes,” Lester Eastman Conf. on High Performance Devices, paper III.9, Columbus, Ohio, August 2018.
  37. A. Ebadi-Shahrivar, P. Fay, B. Hochwald, and D. Love, “Multi-Antenna SAR Estimation with Linear Time,” USNC-URSI Radio Science Meeting, Boston, July 2018.
  38. J. Wang, L. Cao, J. Xie, E. Beam, C. Youtsey, R. McCarthy, L. Guido, and P. Fay, “Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage,” IEEE Device Research Conf., paper III-B.2, Santa Barbara, CA, June 2018.
  39. H. Ye and P. Fay, “Investigation of Effect of Growth Temperature on Deep Levels in GaAs Photovoltaics,” Electronic Materials Conf., paper JJ03, Santa Barbara, CA, June 2018.
  40. P. Fay, J. Wang, L. Cao, W. Li, R. McCarthy, R. Reddy, C. Youtsey, C. F. Lo, H. Marchand, W. Johnson, M. Brubaker, and K. Bertness, “Prospects for High Performance RF Interconnects and Functional Integration Using GaN on Silicon,” IEEE Silicon Nanoelectronics Workshop, paper 9.2, Honolulu, HI, June 2018.
  41. J. Wang, L. Cao, R. McCarthy, C. Youtsey, L. Guido, J. Xie, E. Beam, and P. Fay, “High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates,” Int’l Symp. On Compound Semiconductors, paper We1D1.5, Cambridge, MA, June 2018.
  42. L. Cao, J. Wang, G. Harden, A. Hoffman, and P. Fay, “Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates,” Int’l Symp. On Compound Semiconductors, paper We1D1.6, Cambridge, MA, June 2018.
  43. J. Encomendero, R. Yan, A. Verma, S. M. Islam, V. Protasenko, S. Rouvimov, P. Fay, D. Jena and H. Xing, “Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures,” Int’l Symp. On Compound Semiconductors, paper We2C2.2, Cambridge, MA, June 2018.
  44. A. Kummel, W. Li, A. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn, S. Madisetti, J. Wu, P. Asbeck, S. Oktyabrsky, and P. Fay, “Passivation of High K/GaN Interfaces for GaN Tunnel FETs,” Electrochemical Society (ECS) Meeting, Seattle, WA, May 2018.
  45. L. Cao, C. F. Lo, H. Marchand, W. Johnson, and P. Fay, “Low-Loss Coplanar Waveguides on GaN-on-Si Substrates for MMICs,” Proc. GaN Marathon 2.0, Padova, Italy, April 2018.
  46. G. Silva, P. Fay, C. Jerez, “High Temperature Optimized W-HfO2 Thermal Emietters for Thermophotovoltaic Applications,” Applied Physics Soc. Mtg., Columbus, OH, April 2018.
  47. P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, H. Xing, D. Jena, S. Keller, G. Klimeck, M. Brubaker, B. Spann, and K. Bertness, “III-N Nanowire Devices for Low Power Applications,” International Workshop on the Physics of Semiconductor Devices, New Delhi, India, December 2017.
  48. J. Wang, L. Cao, J. Xie, E. Beam, R. McCarthy, C. Youtsey, and P. Fay, “High Voltage Vertical p-n Diodes with Ion-Implanted Edge Termination and Sputtered SiNx Passivation on GaN Substrates,” IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, December 2017.
  49. J. Zhang, C. Alessandri, P. Fay, A. Seabaugh, T. Ytterdal, E. Memisevic, and L. Wernersson, “Projected Performance of Experimental InAs/GaAsSb/GaSb TFET as Millimeter-Wave Detector,” Berkley Symp. On Energy Efficient Electronic Systems, Berkeley, CA, October 2017.
  50. L. Cao, C. Lo, H. Marchand, W. Johnson, and P. Fay, “Coplanar Waveguide Performance Comparison of GaN-on-Si and GaN-on-SiC Substrates,” IEEE Compound Semiconductor Integrated Circuits Conf., Miami, October 2017.
  51. W. Li, M. Brubaker, B. Spann, K. Bertness, and P. Fay, “GaN-Channel Nanowire MOSFETs for Low Power Applications,” Topical Workshop on Heterostructure Materials, Kagoshima, JP, August 2017.
  52. J. Encomendero, S. M. Islam, S. Rouvimov, P. Fay, D. Jena, and H. Xing, “Record High Peak Current Density of Over 180 kA/cm2 in GaN/AlN Resonant Tunneling Diodes,” Int’l Conf. on Nitride Semiconductors (ICNS), Strasbourg, FR, July 2017.
  53. A. Ebadi-Shahrivar, J. Ren, P. Fay. B. Hochwald, J. M. Jin, and D. Love, “Mixed Quadratic Model for Peak Spatial-Average SAR of Coherent Multiple Antenna Devices,” IEEE AP-S Symp. On Antennas and Propagataion and USNC-URSI Radio Science Meeting, San Diego, CA, July 2017.
  54. G. Silva-Oelker, R. Aylwin, C. Jerez-Hanckes, and P. Fay, “Uncertainty Quantification for Electromagnetic Scattering by 1D Perfect Electric Conducting Gratings,” Int’l Conf. on Mathematical and Numerical Aspects of Wave Propagation (WAVES 2017), Minneapolis, May 2017.
  55. J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, A. Xie, E. Beam, and P. Fay, “Thin-Film GaN p-n Diodes and Epitaxial Lift-Off from GaN Substrates,” Int’l Symp. On Compound Semiconductors, paper B8.5, Berlin, May 2017.
  56. P. Fay, “Novel Heterostructure Devices for Ultra-Scaled Logic,” American Physical Society Meeting, New Orleans, March 2017.
  57. P. Fay, W. Li, D. Digiovanni, L. Cao, K. Pourang, H. Ilatikhameneh, F. Chen, T. Ameen, R. Rahman, G. Klimeck, C. Lund, S. Keller, S. M. Islam, A. Chaney, Y. Cho, and D. Jena, “III-N Heterostructure Devices for Low-Power Logic,” Proc. China Semiconductor Technology International Conference, Shanghai, March 2017.
  58. A. Ebadi-Shahrivar, J. Ren, P. Fay, B. Hochwald, and J. M. Jin, “Mixed Quadratic Model for Peak Spatial-average SAR of Coherent Multiple Antenna Devices,” Proc. IEEE Int’l Symp. On Antennas and Propagation and USNC-URSI Radio Science Meeting, San Diego, July 2017.
  59. L. Liu, Z. Jiang, M. Shams, S. Rahman, and P. Fay, “Dynamically Tunable and Reconfigurable Antennas for Advanced THz Sensing and Imaging,” Int’l Union of Radio Science National Radio Science Meeting (URSI-NRSM), Boulder, CO, Jan. 2017.
  60. P. Fay. J. Wang, C. Youtsey, R. McCarthy, R. Reddy, T. Ciarkowski, E. Carlson, L. Guido, A. Xie, and E. Beam, “GaN-Based Epitaxial Lift-off for Device Applications,” International Workshop on Nitrides, Orlando, FL, Oct. 2016.
  61. P. Fay, W. Li, L. Cao, and Y. Zhao, “Beyond Power: III-N Devices for Low-Power Systems, Millimeter-Wave Applications, and More,” Proc. IEEE SBmicro Conf., “Chip on the Mountains,” Belo Horizonte, Brazil, August 2016.
  62. P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, and G. Klimeck, “Novel III-N Heterostructure Devices for Low-Power Logic and More,” Proc. IEEE Int’l. Conf. on Nanotechnology, pp. 767-769, Sendai, Japan, August 2016.
  63. T. Lu, J. Kulick, J. Lannon, G. Bernstein, and P. Fay, “Heterogeneous microwave and millimeter-wave system integration using quilt packaging,” Proc. IEEE MTT-S International Microwave Symp., pp. 1-4, DOI: 10.1109/MWSYM.2016.7540247, 2016.
  64. P. Fay, W. Li, S. Rahman, Z. Jiang, and L. Liu, “Tunneling-Based Heterostructure Devices for Millimeter-Wave and THz Sensing,” National Aerospace and Electronics Conf., Dayton, OH, July 2016.
  65. S. M. Islam, M. Qi, B. Song, K. Nomoto, V. Protasenko, J. Wang, S. Rouvimov, P. Fay, H. Xing, and D. Jena, “First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC,” Proc. Device Research Conf., pp. 1-2, DOI: 10.1109/DRC.2016.7548396, 2016.
  66. J. Wang, C. Youtsey, R. McCarthy, R. Reddy, L. Guido, A. Xie, E. Beam, and P. Fay, “Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-Off,” Proc. Device Research Conf., p. 181-182, Newark, DE, 2016.
  67. P. Fay, W. Li, S. Rahman, Z. Jiang, and L. Liu, “Advances in III-V Heterostructure Devices and Integration for Millimetre-Wave and THz Sensing and Imaging,” Proc. Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE), pp. S11-S13, Aveiro, Portugal, paper June 2016.
  68. L. Liu, M. Shams, Z. Jiang, S. Rahman, P. Fay, L. Cheng, and J. Hesler, “Tunable and reconfigurable THz devices for advanced imaging and adaptive wireless communication,” Proc. SPIE, vol. 9934, Terahertz Emitters, Receivers, and Applications VII, p. 993407, doi: 10.1117/12.2237709, San Diego, CA, 2016.
  69. W. Li, K. Pourang, S. M. Islam, D. Jena, and P. Fay, “GaN Nanowire MISFETs for Low-Power Applications,” Proc. Compound Semiconductor MANTECH Conf., pp. 313-316, Miami, FL, 2016.
  70. V. Elarde, G. Hillier, A. Wibowo, R. Hoheisel, M. Lumb, S. Tomasulo, N. Kotulak, D. Scheiman, P. Jenkins, R. Walters, D. Heemstra, P. Fay, M. Wanlass, M. Osowski, and N. Pan, “High-Temperature (450 °C) Operation of InGaP Solar Cell Under N2 Ambient Using Refractory Metal Contacts,” Proc. IEEE Photovoltaics Specialists Conf., paper D18-633, Portland, OR, 2016.
  71. A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. C. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, “Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels,” Proc. Int’l Electron Devices Meeting, pp. 35.6.1-35.6.4, Washington DC, 2015.
  72. M. Qi, K. Namoto, M. Zhu, Z. Hu, Y. Zhao, B. Song, G. Li, P. Fay. H. Xing, and D. Jena, “High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates,” Proc. Device Research Conf., Columbus, OH, 2015.
  73. L. Cao, W. Li, X. Yan, D. Jena, and P. Fay, “Performance Projections for GaN/InN/GaN Heterojunction Nanowire TFETs for Low-Power Logic Applications,” Proc. Int’l Symp. Compound Semiconductors, Santa Barbara, CA, 2015.
  74. W. Li, T. Yu, J. Hoyt, and P. Fay, “III-V TFETs as High Sensitivity RF Detectors,” Proc. Int’l Symp. Compound Semiconductors, Santa Barbara, CA, 2015.
  75. X. Jehl, A. Orlov, R. Maurand, P. Fay, G. Snider, S. Barraud, and M. Sanquer, “Simultaneous two gate reflectometric spectroscopy of Si coupled donor-dot system,” Proc. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 2015.
  76. A. Orlov, P. Fay, G. Snider, X. Jehl, R. Lavieville, S. Barraud, and M. Sanquer, “Study of charged island formation in nanoscale Si single-electron transistors using dual port reflectometric spectroscopy,” Proc. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 2015.
  77. C. Lorenz, S. Hemour, P. Fay, and K. Wu, “Overcoming the Efficiency Limitation of Low Microwave Power Harvestinug with Backward Tunnel Diodes,” Proc. Int’l Microwave Symp., paper WE1F, Phoenix, AZ, 2015.
  78. M. Shams, P. Fay, and L. Liu, “A Terahertz Reconfigurable Photo-Induced Fresnel-Zone-Plate Antenna for Dynamic Two-Dimensional Beam Steering and Forming,” Proc. Int’l Microwave Symp., Phoenix, AZ, 2015.
  79. J. Ren, B. Song, H. Xing, W. Li, S. Chen, A. Ketterson, E. Beam, T. M. Chou, M. Pilla, H. Q. Tserng, X. Gao, P. Saunier, and P. Fay, “Model Development for Monolithically-Integrated E/D-mode Millimeter-Wave InAlN/AlN/GaN HEMTs,” Proc. Compound Semiconductor Integrated Circuit Symp., San Diego, CA, 2014.
  80. J. Law, C. Roedig, D. Burdette, K. Sertel, G. Trichopoulos, Y. Xie, P. Fay, and H. Mosbacker, “Design Considerations and Performance Metrics of a High-Sensitivity Multi-Band Terahertz Linear Camera,” Proc. 39th Int’l Conf. on Infrared, Millimeter, and Terahertz Waves, Tuscon, AZ, 2014.
  81. M. Shams, Z. Jiang, J. Qayyum, S. Rahman, S. Singh, J. Hesler, P. Fay, and L. Liu, “Characterizing a WR-1.5 Diagonal Horn Antenna Using Photo-Induced Coded-Aperture Imaging,” Proc. 39th Int’l Conf. on Infrared, Millimeter, and Terahertz Waves, Tuscon, AZ, 2014.
  82. S. Rahman, Z. Jiang, H. Xing, P. Fay, and L. Liu, “Design, Fabrication and Characeterization of 585 GHz Integrated Focal-Plane Arrays Based on Heterostructure Backward Diodes,” Proc. 39th Int’l Conf. on Infrared, Millimeter, and Terahertz Waves, Tuscon, AZ, 2014.
  83. P. Fay, Y. Xie, Y. Zhao, Z. Jiang, S. Rahman, H. Xing, B. Sensale-Rodriguez, and L. Liu, “Emerging Electronic Devices for THz Sensing and Imaging,” Proc. SPIE Optics and Photonics Conf., vol. 9199, San Diego, CA, 2014.
  84. L. Schneider, P. Fay, A. Orlov, and G. Snider, “Studies of Ultra-Thin Tunnel Barriers Fabricated by Atomic Layer Deposition in Nano-Scaled Metal-Based Single Electron Transistors,” Proc. Int’l. Conf. on Superlattices, Nanostructures, and Nanodevices, Savannah, GA, 2014.
  85. J. Ren, B. Song, H. Xing, A. Ketterson, E. Beam, T. M. Chou, M. Pilla, H. Q. Tserng, X. Gao, P. Saunier, and P. Fay, “GaN Power DACs for Energy-Efficient Wireless Systems,” Broadband Wireless Access and Applications Center Conf., Blacksburg, VA, 2014. Received Best Student Poster award.
  86. W. Li, A. Beling, J. Campbell, G. Hillier, C. Stender, N. Pan, and P. Fay, “Front-Side-Illuminated Modified UTC-Photodiodes with Cliff Layer,” Proc. Compound Semiconctor MANTECH Conf., Denver, CO, 2014.
  87. Y. Zhao, W. Chen, M. Zhu, Y. Yue, B. Song, J. Encomendero, B. Sensale-Rodreguez, H. Xing, and P. Fay, “Direct Electrical Observation of Plasma Waves in GaN-Based 2DEGs,” Proc. Int’l Symp. Compound Semiconductors, Montpellier, FR, 2014.
  88. A. Orlov, P. Fay, G. Snider, X. Jehl, S. Barraud, and M. Sanquer, “Back-gating effects on radio-frequency reflectometry-based characterization of nanoscale Si single-electron transistors,” 2014 Silicon Nanoelectronics Workshop, Honolulu, HI, 2014.
  89. A. Orlov, P. Fay, G. Snider, X. Jehl, and M. Sanquer, “Dual channel radio frequency reflectometry technique for charge identification in single electron transistors,” Proc. 14th IEEE Int’l Conf. on Nanotechnology, Toronto, ON, 2014.
  90. D. Kopp, M. Khan, G. H. Bernstein, and P. Fay, “Ultra-broadband chip-to-chip interconnects to 220 GHz for Si-based millimeter-wave systems,” Proc. IEEE Int’l Interconnect Technology Conf. / Advanced Metallization Conf., pp. 293-296, San Jose, CA, 2014.
  91. W. Li, T. Yu, J. Hoyt, and P. Fay, “InGaAs/GaAsSb Interband Tunneling FETs as Tunable RF Detectors,” Proc. Device Research Conf., Santa Barbara, CA, 2014.
  92. Z. Jiang, S. Rahman, M. Shams, P. Fay, J. Hesler, and L. Liu, “A 200 GHz lens-coupled annular-slot antenna with 50 GHz tuning range for reconfigurable terahertz detectors,” Proc. IEEE MTT-S Int’l Microwave Symp., DOI 10.1109/MWSYM.2014.6848460, Tampa, FL, 2014.
  93. A. Orlov, P. Fay, G. Snider, X. Jehl, S. Barraud, and M. Sanquer, “Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry,” Proc. Device Research Conf., Santa Barbara, CA, 2014.
  94. Z. Jiang, P. Fay, S. Ruggiero, and L. Liu, “Multiband terahertz quasi-optical balanced hot-electron mixers based on dual-polarization sinuous antennas,” Proc. SPIE Sensing Technology and Applications, paper #9102-15, Baltimore, MD, 2014.
  95. M. I. Shams, Z. Jiang, S. Rahman, J. Qayyum, H. Xing, P. Fay, and L. Liu, “Approaching Real-Time Terahertz Imaging Using Photo-Induced Reconfigurable Aperture Arrays,” Proc. SPIE Sensing Technology and Applications, Baltimore, MD, 2014.
  96. O. Malis, C. Edmunds, D. Li, J. Shao, G. Garner, W. Li. P. Fay, and M. Manfra, “Quantum band engineering of nitride semiconductors for infrared lasers,” Proc. SPIE, Photonics West, San Francisco, CA, 2014.
  97. J. Kulick, J. Lu, P. Fay, G. H. Bernstein, J. Gallagher, and J. Lannon, “Heterogeneous Integration of Microwave Systems Using Quilt Packaging,” Government Microcircuit Applications and Critical Technology Conference, Charleston, SC, 2014.
  98. R. Wang, G. Li, J. Guo, B. Song, S. Ganguly, B. Sensale-Rodrigues, Z. Hu, Y. Yue, K. Nomoto, F. Faria, J. Verma, S. Rouvimov, X. Gao, O. Laboutin, Y. Cao, W. Johnson, P. Fay, D. Jena, and H. Xing, “Dispersion free operation in InAlN-based HEMTs with ultrathin or no passivation,” Proc. Int’l Electron Devices Meeting, Washington, D.C., 2013.
  99. S. Ganguly, G. Li, B. Song, M. Zhu. S. Vishwanath, R. Yan, X. Yan. P. Fay, H. Xing, and D. Jena “Performance Boost by Isotope Engineering in AlN/Ga14N0.515N0.5 HEMTs grown by MBE,” Proc. North American MBE Conf., Banff, AB, 2013.
  100. P. Zhao, A. Verma, J. Verma, G. Xing, P. Fay, and D. Jena, “GaN Heterostructure Barrier Diodes (HBD) with Polarization-Induced Delta-Doping,” Proc. Device Research Conf., Notre Dame, IN, 2013.
  101. S. Rahman, Z. Jiang, Y. Xie, H. Xing, P. Fay, and L. Liu, “Terahertz Focal Plane Arrays Employing Heterostructure Backward Diodes Integrated with Folded Dipole Antennas,” Proc. IEEE Int’l. Microwave Symp., Seattle, WA, 2013.
  102. G. Zhou, R. Li, T. Vasen, M. Qi, S. Chae, Y. Lu, Q. Zhang, H. Zhu, J. M. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 µA/µm at VDS=0.5 V”, Proc. Int’l Electron Devices Meeting, San Fransisco, CA, 2012.
  103. Z. Jiang, S. M. Rahman, P. Fay, S. T. Ruggiero, and L. Liu, “Lens-Coupled Dual Polarization Sinuous Antenna for Quasi-Optical Terahertz Balanced Mixers,” Proc. Asia-Pacific Microwave Conf., Kaohsiung, Taiwan, 2012.
  104. D. S. Lee, T. Palacios, O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, D. Kopp, and P. Fay, “317 GHz InAlGaN/GaN HEMTs with Extremely Low On-Resistance,” Proc. Int’l Symp. on Compound Semiconductors, Santa Barbara, CA, 2012.
  105. M. I. Shams, Y. Xie, Y. Lu, and P. Fay, “An Accurate Interband Tunneling Model for InAs/GaSb Heterostructure Devices,” Proc. Int’l Symp. on Compound Semiconductors, Santa Barbara, CA, 2012.
  106. R. Wang, G. Li, G. Karbasian, J. Guo, B. Song, Y. Yue, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing, “Quaternary Barrier T-gate InAlGaN HEMTs with ft/fmax of 230/300 GHz,” Proc. International Workshop on Nitride Semiconductors, Sapporo, Japan, 2012.
  107. A. Orlov, B. Villis, V. Deshpande, X. Jehl, M. Sanquer, P. Fay, and G. Snider, “Applications of RF Admittance Analysis for Single-Electron Spectroscopy,” Workshop on Innovative Nanoscale Devices and Systems, Kohala Coast, HI, 2012.
  108. B. Song, P. Saunier, B. Sensale-Rodriguez, R. Wang, A. Ketterson, X. Gao, S. Guo, P. Fay, D. Jena, and H. Xing, “Gate-recessed InAlN/AlN/GaN HEMTs with ft/fmax of 225/250 GHz,” Lester Eastman Conf., Providence, RI, 2012.
  109. W. Chen, B. Chen, J. Yuan, A. Holmes, and P. Fay, “Characterization and Impact of Traps in Lattice-Matched and Strain-Compensated In1-xGaxAs/GaAs1-ySby Multiple Quantum Well Photodiodes,” Device Research Conf., University Park, PA, 2012.
  110. B. Song, B. Sensale-Rodriguez, R. Wang, A. Ketterson, M. Schuette, E. Beam, P. Saunier, X. Gao, S. Guo, P. Fay, D. Jena, and H. Xing, “Monolithically Integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz,” Device Research Conf., University Park, PA, 2012.
  111. Y. Zhao, P. Fay, A. Wibowo, J. Liu and C. Youtsey, “Via-Hole Fabrication for III-V Triple-Junction Solar Cells,” Int’l Conf. on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), Waikoloa, HI 2012.
  112. G. Karbasian, A. Orlov, P. Fay, H. Xing, D. Jena, and G. Snider, “High Aspect Ratio Features in PMGI using Electron Beam Lithography and Solvent Developers,” Int’l Conf. on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), Waikoloa, HI 2012.
  113. Y. Yue, Z. Hu, J. Guo, R. Wang, B. Song, B. Sensale-Rodriquez, F. Faria, T. Fang, G. Li, G. Snider, P. Fay, J. Jena, and H. Xing, “InAlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz,” Electronic Materials Conf., University Park, PA, 2012.
  114. S. Rahman, Z. Jiang, H. Xing, P. Fay, and L. Liu, “Development of Terahertz Focal-Plane Array Elements using Sb-Based Heterostructure Backward Diodes,” Int’l. Symp. on Space Terahertz Technology, Tokyo, 2012.
  115. D. Lee, B. Lu, M. Azize, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “Impact of GaN Channel Scaling in InAlN/GaN HEMTs,” Proc. Int’l Electron Devices Meeting, pp. 19.2.1-4, Washington DC, 2011.
  116. A. Orlov, B. Villis, X. Jehl, G. Snider, P. Fay, and M. Sanquer, “Defect detection in nanowire MOSFETs using radio-frequency reflectometry,” Int’l Symp. on Advanced Nanodevices and Nanotechnology, Maui, HI, 2011.
  117. H. L. Mosbacker, J. Alverbro, Z. Zhang, P. Fay, Y. Ni, P. Potet, K. Sertel, G. Trichopoulos, K. Topalli, J. Volakis, and D. Burdette, “Initial test results for a real-time, 80x64 pixel, 600 GHz-1.2 THz imager,” Proc. 36th Int’l Con.f on Infrared, Millimeter and Terahertz Waves, Houston, TX, 2011.
  118. S. D. Chae, G. Zhou, I. Kwihangana, R. Li, Y. Lu, Q. Liu, T. Vasen, Q. Zhang, W. S. Hwang, P. Fay, T. Kosel, M. Wistey, H. Xing, and A. Seabaugh, “Characterization of Interface Traps in Metal-High-k-InAs/GaSb TFETs,” Proc. IEEE Semiconductor Interface Specialists Conf., Arlington, VA, 2011.
  119. R. Wang, G. Li, J. Verma, X. Gao, S. Guo, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing, “Alloyed Ohmic Contacts with Si Interlayer on AlN-bearing HEMTs and 220-GHz GaN HEMTs,” Proc. Int’l. Conf. Nitride Semiconductors, Glasgow, UK, 2011.
  120. R. Wang, G. Li, T. Fang, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing, "Improvement of ft in InAl(Ga)N barrier HEMTs by Plasma Treatments," Proc. Device Research Conf., pp. 139-140, Santa Barbara, CA, 2011.
  121. G. Zhou, Y. Lu, R. Li, Q. Zhang, H. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, "Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs," Proc. Device Research Conf., pp. 205-206, Santa Barbara, CA, 2011.
  122. D. Kopp, G. H. Bernstein, and P. Fay, “Length and Geometry Dependence of Quilt Packaging at Microwave Frequencies,” IEEE Radio Frequency Workshop 2011, Fort Wayne, IN, 2011.
  123. Q. Zheng, P. Fay, and G. H. Bernstein, “An Interlocking 2D Chip-to-Chip Interconnect for Quilt Packaging,” IEEE Radio Frequency Workshop 2011, Fort Wayne, IN, 2011.
  124. R. Wang, G. Li, Z. Hu, T. Zimmerman, J. Guo, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing, “SiN passivated D-mode InAlN HEMTs with 1.9 A/mm current density and 660 mS/mm transconductance,” 38th Int’l Symposium on Compound Semiconductors, Berlin, Germany, 2011.
  125. W. Chen, J. Yuan, A. Holmes, and P. Fay, “Evaluation of Deep Levels in In0.53Ga0.47As and GaAs0.5Sb0.5 Using Low-Frequency Noise and RTS Noise Characterization,” 38th Int’l Symposium on Compound Semiconductors, Berlin, Germany, 2011.
  126. A. Seabaugh, R. Li, G. Zhou, Q. Liu, C. Chen, S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, S. Koswatta, and Y. Lu, “InAs/AlGaSb heterojunction tunnel FET with InAs airbridge drain,” 38th Int’l Symposium on Compound Semiconductors, Berlin, Germany, 2011.
  127. T. Vasen, Q. Liu, M. Rahman, G. Zhou, Y. Lu, R. Li, C. Chen, Q. Zhang, N. Goel, C. Park, J.-M. Kuo, H. Zhu, S. Koswatta, D. Wheeler, P. Fay. H. G. Xing, T. Kosel, M. Wistey, and A. Seabaugh, “Lateral InGaAs Tunneling Field-Effect Transistor with Regrown, Self-Aligned Tunnel Junction by Molecular Beam Epitaxy,” SRC TECHCON 2011, Austin, TX, 2011.
  128. D. J. Burdette, J. Alverbro, P. Fay, K. Sertel, K. Topalli, G. Trichopoulos, J. Volakis, and H. L. Mosbacker, “Development of an 80 x 64 pixel, broadband, real-time THz imager,” Proc. SPIE Defense, Security and Sensing Conf., paper 8023-14, Orlando, FL, 2011.
  129. Y. Tang, P. Saunier, R. Wang, A. Ketterson, X. Gao, S. Suo, G. Snider, D. Jena, H. Xing, and P. Fay, “High-Performance Monolithically-Integrated E/D InAlN/AlN/GaN HEMTs for Mixed-Signal Applications,” Proc. IEEE Int’l. Electron Devices Meeting, pp. , San Francisco, 2010.
  130. Z. Zhang, R. Rajavel, P. Deelman, Y. Cao, M. Kelly, D. Jena, and P. Fay, “A Physics-Based Tunneling Model for Sb-Heterostructure Backward Tunnel Diode Millimeter-Wave Detectors,” Proc. IEEE Lester Eastman Conf. on High Performance Devices, Troy, NY, 2010.
  131. L. Liu, J. L. Hesler, R. M. Weikle, T. Wang, P. Fay, and H. Xing, “A 570-630 GHz Frequency Domain Spectroscopy System Based on Broadband Quasi-Optical Zero Bias Schottky Diode Detectors,” Proc. IEEE Lester Eastman Conf. on High Performance Devices, Troy, NY, 2010.
  132. Y. Lu, A. Seabaugh, H. Xing, T. Kosel, S. Koswatta, H. Zhu, K. Clark, J. M. Kuo, P. Pinsukanjana, and P. Fay, “Effect of Aluminum Composition on Current-Voltage Characteristics of AlGaSb/InAs Tunnel Junctions,” Proc. Electronic Materials Conf., Notre Dame, IN, 2010.
  133. G. Zhou, H. Zhu, P. Pinsukanjana, Y.- C. Kao, T. Kosel, P. Fay, M. Wistey, A. Seabaugh, and H. Xing, “Regrown InGaAs Tunnel Junctions for TFETs,” Proc. Electronic Materials Conf., Notre Dame, IN, 2010.
  134. Y. Lu, A. Seabaugh, P. Fay, S. J. Koester, S. E. Laux, W. Haensch, and S. O. Koswatta, “Geometry Dependent Tunnel FET Performance – Dilemma of Electrostatics vs. Quantum Confinement,” Proc. Device Research Conf., pp. 17-18, Notre Dame, IN, 2010.
  135. G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena, “Work-Function Engineering in Novel High Al Composition Al0.72Ga0.28N/AlN/GaN HEMTs,” Proc. Device Research Conf., pp. 21-22, Notre Dame, IN, 2010.
  136. R. Wang, X. Xing, T. Fang, T. Zimmermann, C. Lian, G. Li, P. Saunier, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing, “High Performance E-mode InAlN/GaN HEMTs: Interface States from Subthreshold Slopes,” Proc. Device Research Conf., pp. 129-130, Notre Dame, IN, 2010.
  137. X. Xing, W. Yuan, D. Hall, and P. Fay, “Depletion-mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs with InAlP Native Oixde Gate Dielectric for RF Applications,” Proc. Device Research Conf., pp. 157-158, Notre Dame, IN, 2010.
  138. X. Xing and P. Fay, “Enhancement-mode Pseudomorphic In0.22Ga0.78As-channel MOSFETs with InAlP Native Oxide Gate Dielectric,” Compound Semiconductor MANTECH Conf., pp. 207-210, Portland, OR, 2010.
  139. D. Kopp, M. A. Khan, S. Garvey, K. Anderson, J. Kulick, A. Kriman, G. H. Bernstein, and P. Fay, “Quilt Packaging: A robust coplanar chip-to-chip interconnect offering very high bandwidth,” Compound Semiconductor MANTECH Conf., pp. 309-312, Portland, OR, 2010.
  140. L. Liu, B. Sensale-Rodriguez, Z. Zhang, T. Zimmermann, Y. Cao, D. Jena, P. Fay, and H. G. Xing, “Development of Microwave and Terahertz Detectors Utilizing AlN/GaN High Electron Mobility Transistors,” Proc. 21st Int’l. Symp. on Space Terahertz Technology, Oxford, UK, 2010.
  141. D. Wheeler, S. Kabeer, Y. Lu, T. Vasen, Q. Zhang, G. Zhou, K. Clark, H. Zhu, Y.-C. Kao, P. Fay, T. Kosel, H. Xing, and A. Seabaugh, “Fabrication Approach for Lateral InGaAs Tunnel Transistors,” Intl. Semiconductor Device Research Symp., College Park, MD, 2009.
  142. S. Kabeer, T. Vasen, D. Wheeler, Q. Zhang, S. Koswatta, H. Zhu, K. Clark, J.-M. Kuo, Y.-C. Kao, S. Corcoran, B. Doyle, P. Fay, T. Kosel, H. Xing, and A. Seabaugh, “Effect of Dopant Profile on Current-Voltage Characteristics of p+n+ In0.53Ga0.47As Tunnel Junctions,” Intl. Semiconductor Device Research Symp., College Park, MD, 2009.
  143. D. Kopp, W. Buckhanan, M. Ashraf Khan, J. Kulick, C. Liang, M. Padberg, R. Savino, G. H. Bernstein, and P. Fay, “Quilt Packaging of RF Systems with Ultra-Wide Bandwidths,” IMAPS Advanced Technol. Workshop on RF and Microwave Packaging, paper TP11, San Diego, CA, 2009.
  144. Z. Zhang, N. Su, R. Rajavel, P. Deelman, and P. Fay, “Sb-Heterostructure Backward Diode Detectors with Ultrathin Tunnel Barriers,” Proc. Device Research Conf., pp. 145-146, University Park, PA, 2009.
  145. J. Simon, Z. Zhang, K. Goodman, T. Kosel, P. Fay, and D. Jena, “Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures,” Proc. Device Research Conf., pp. 101-102, University Park, PA, 2009.
  146. K. Tahy, D. Shilling, T. Zimmermann, H. Xing, P. Fay, Luxmi, R. M. Feenstra, and D. Jena, “Gigahertz Operation of Epitaxial Graphene Transistors,” Proc. Device Research Conf., pp. 203-204, University Park, PA, 2009.
  147. G. C. Trichopoulos, G. Mumcu, K. Sertel, H. L. Mosbacker, Y. Tang, Z. Zhang, P. Fay, and J. Volakis, “A Focal Plane Imaging Array for High Sensitivity Direct Detection of Excised Tissue Characteristics,” Proc. IEEE Intl. Symp. on Antennas and Propagation and USNC/URSI National Radio Science Meeting, paper 209.4, Charleston, SC, 2009.
  148. Y. Tang, A. Orlov, G. Snider, and P. Fay, “Towards Real-Time Testing of Clocked Quantum Dot Cellular Automata,” Proc. 2009 IEEE Nanotechnology Materials and Devices Conf., Traverse City, MI, 2009.
  149. C. Liang, R. Savino, J. Kulick, D. Kopp, W. Buckhanan, G. Snider, P. Fay, and G. H. Bernstein, “Solderability Study on Immersion Tin Coated on Cu Nodules for Chip-to-Chip Connection,” MRS Spring Meeting, paper F2.2, San Francisco, April, 2009.
  150. C. Liang, W. Buckhanan, A. Carter, P. Fay, M. Khan, D. Kopp, J. Kulick, Y. Lee, M. Padberg, R. Savino, G. Snider, and G. H. Bernstein, “Novel Packaging via Solder Joints at Chip Edges,” Proc. 5th Intl. Conf. on Device Packaging, Scottsdale, AZ, 2009.
  151. J. A. Bean, B. N. Tiwari, G. Szakmany, G. H. Bernstein, P. Fay, and W. Porod, “Long Wave Infrared Detection Using Dipole Antenna-Coupled Metal-Oxide-Metal Diodes,” Proc. 33rd International Conf. on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), paper M3K3.1618, Pasadena, CA, 2008.
  152. N. Su, Z. Zhang, R. Rajavel, P. Deelman, J. N. Schulman, and P. Fay, “Scaling of High-Performance InAs/AlSb/GaSb Heterostructure Detectors for Millimeter-Wave and Submillimeter-Wave Sensing and Imaging,” Proc. Device Research Conf., pp. 123-124, Santa Barbara, CA, 2008.
  153. C. Lian, X. Xing, P. Fay, H. Xing, Y-. C. Chang, and Z. Chen, “Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~20 and ft of ~2.6 GHz,” Proc. Device Research Conf., pp. 209-210, Santa Barbara, CA, 2008.
  154. J. A. Bean, B. Tiwari, G. H. Bernstein, P. Fay, and W. Porod, "Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes," Proc. 53rd Int'l Conf. on Electron, Ion, and Photon Beam Technol. and Nanofrabrcation (EIPBN), Portland, OR, 2008.
  155. J. Bean, B. Tiwari, G. H. Bernstein, P. Fay, and W. Porod, “Long-wave Infrared Detection Using Dipole Antenna-Coupled Metal-Oxide-Metal Diodes,” 2008 IEEE Silicon Nanoelectronics Workshop, 2008.
  156. H. Xing, T. Zimmermann, D. Deen, K. Wang, C. Yu, T. Kosel, P. Fay, and D. Jena, “Ultrathin all-binary AlN/GaN based high-performance RF HEMT Technology,” 2008 International Conference on Compound Semiconductor Manufacturing Technology, Chicago, IL, April 2008.
  157. Y. Cao, D. Deen, J. Simon, J. Bean, N. Su, J. Zhang, P. Fay, H. Xing, and D. Jena, “Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities,” 2007 Intl. Semiconductor Device Research Symp., College Park, MD, 2007.
  158. B. Wu, D. Wheeler, C. Yi, I. Yoon, S. Jha, A. Brown, T. Kuech, P. Fay, and A. Seabaugh, “InAs Growth on Submicron (100) SOI Islands for InAs-Si Composite-Channel MOSFETs,” 2007 Intl. Semiconductor Device Research Symp., College Park, MD, 2007.
  159. J. Zhang, T. H. Kosel, D. C. Hall, and P. Fay, “Performance of Sub-micron Gate Length InAlP Native Oxide GaAs-channel MOSFETs,” Proc. Device Research Conf., pp. 211-212, Notre Dame, IN, 2007.
  160. S-. Y. Park, R. Yu, S-. Y. Chung, P. R. Berger, P. E. Thompson, and P. Fay, “Delta-Doped Si/SiGe Zero-Bias Backward Diodes for Micro-Wave Detection,” Proc. Device Research Conf., pp. 153-154, Notre Dame, IN, 2007.
  161. N. Su, Z. Zhang, H. P. Moyer, R. D. Rajavel, J. N. Schulman, and P. Fay, “Sb-heterostructure Millimeter-Wave Detectors with Improved Noise Performance,” Proc. Device Research Conf., pp. 151-152, Notre Dame, IN, 2007.
  162. J. Zhang, T. H. Kosel, P. Fay, and D. C. Hall, “Wet Thermal Oxides of Non-Lattice-Matched InAlP on GaAs,” presented at Electronic Materials Conf., paper T7, Notre Dame, IN, 2007.
  163. P. Fay, A. Brown, T. Kuech, and A. Seabaugh, “Extremely Mismatched Materials for Advanced Nanodevices,” NSF Nanoscale Science and Engineering Grantees Conf., pp. 86-88, Arlington, VA, 2006.
  164. Y. Cao, J. Zhang, T. H. Kosel, D. C. Hall, and P. Fay, “Microwave-Frequency InAlP-oxide/GaAs MOSFETs,” IEEE Compound Semiconductor Integrated Circuits Symposium Tech. Digest, paper C.2, pp. 43-46, San Antonio, TX, 2006.
  165. D. Wheeler, B. Wu, Z. Racz, Qin Zhang, P. Fay, and A. Seabaugh, University of Notre Dame, C. Yi, I. Yoon, and A. Brown, Duke University, and T. Kuech, University of Wisconsin-Madison, "III-V channel MOSFETs on SOI," SRC Student Symposium, Cary, NC, October 9-10, 2006.
  166. G. H. Bernstein, Q. Liu, G. Snider, A. Tong, W. Buckhanan, J. Kulick, and P. Fay, “Quilt Packaging - A New Concept in System Integration,” Second Intl. SOP, SIP, SOC (3S) Workshop, Atlanta, GA. 2006.
  167. N. Su, Z. Zhang, H. P. Moyer, R. D. Rajavel, J. N. Schulman, and P. Fay, “Temperature-Dependent Microwave Performance of Sb-Heterostructure Backward Diodes for Millimeter-Wave Detection,” 2006 Lester Eastman Conference on High Performance Devices, Cornell, NY , 2006.
  168. Y. Cao, J. Zhang, T. H. Kosel, X. Zhang, R. D. Dupuis, P. Fay, and D. C. Hall, "Growth of Thin InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Devices," presented at the TMS 2006 Electronic Materials Conference, late news paper 05, State College, PA, 2006.
  169. Z. Sun and P. Fay, “A Dielectric-Filled Cavity-Backed Dipole Antenna for Microwave/Millimeter-wave Applications,” Intl. Microwave Symp., San Francisco, 2006.
  170. G. H. Bernstein, J. Brockman, M. Buckle, A. Carter, P. Fay, N. Gedde, S. Govea, A. Lewis, L. McWilliams, K. Meyes, W. Porod, S. Silliman, and C. Suhendra, “Information and Nano Technologies in an Introductory Engineering Course,” IL/IN Regional Chapter of the American Society of Engineering Education, Fort Wayne, 2006.
  171. M. Ni, P. Fay, and N. Pan, “Temperature Dependence of InGaP/InGaAs/GaAs pHEMTs,” Proc. 2006 International Conference on Compound Semiconductor Manufacturing Technology Symposium, pp. 247-250, Vancouver, BC.
  172. J. Su, H. Yang, W. Porod, P. Fay, and G. H. Bernstein, “Laterally Driven Electrostatic Actuators with Extended Travel Range,” Proceedings of the SPIE, MOEMS Display, Imaging, and Miniaturized Microsystems IV, vol. 6114, pp. 61140P-1-9, 2006.
  173. H. Yang, J. Su, W. Porod, P. Fay, and G. H. Bernstein, “Design of a Tunable Fabry-Perot Interferometer/photodiode (FPI/PD) Spectral Image Sensor in Visible Wavelength Range,” Proceedings of the SPIE, MOEMS Display, Imaging, and Miniaturized Microsystems IV, vol. 6114, pp. 61140A-1-11, 2006.
  174. R. Sankaralingam and P. Fay, “High Bandwidth-Efficiency Long-Wavelength PIN Photodiodes,” Proc. Indium Phosphide and Related Materials Conf., paper 169, pp. 1-4, Glasgow, Scotland, May 2005.
  175. P. Esfandiari, G. Bernstein, P. Fay, W. porod, B. Rakos, A. Zarandy, B. Berland, L. Boloni, G. Boreman, B. Lail, B. Bonacelli, and A. Weeks, “Tunable Antenna-Coupled Metal-Oxide-Metal (MOM) Uncooled IR Detector,” Proceedings of the SPIE, Infrared Technology and Applications XXXI, vol. 5783, pp. 470-482, 2005.
  176. G. H. Bernstein, Q. Liu, Z. Sun, and P. Fay, “Quilt Packaging: A New Paradigm for Interchip Communication,” Proc. 7th Electronics Packaging Technology Conf., 2005.
  177. S. Sinharoy, V. G. Weizer, Y. Wakchaure, N. Su, P. Fay, and D. Scheiman, “Development of a Very High Efficiency, Dot-Junction InGaAs Thermophotovoltaic (TPV) converter for Deep Space Missions”, Proc. 31st IEEE Photovoltaic Specialists Conf., January 3-7, Orlando, FL, p. 766, 2005.
  178. B. Yang and P. Fay, “Control of Surface Morphology in Photoelectrochemical Etching of GaN,” State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V, H. M. Ng and A. G. Baca, eds., pp. 564-569, Honolulu, HI, October 2004.
  179. Z. Sun and P. Fay, “A Compact Nonlinear Model for Coplanar Waveguides on Silicon Substrates,”Proc. 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Atlanta, pp. 191-194, Sept. 2004.
  180. X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang, and R. D. Dupuis, “InAlP Native Oxide/GaAs MOS Heterostructure Interface State Density Measured by Impedance Spectroscopy,” presented at 2004 Electronic Materials Conf., Notre Dame, IN, p. 80, June 2004.
  181. Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, D. C. Hall, R. E. Cook. X. Zhang, and R. D. Dupuis, “Electrical Properties and Microstructure of InAlP Native Oxides for MOS Applications,” presented at 2004 Electronic Materials Conf., Notre Dame, IN, p. 88, June 2004.
  182. S. Rai, P. Fay. B. Han, and N. Pan, “Zn Doping of p-Type GaAsSb from Spin-On Glass Dopant Sources,” presented at 2004 Electronic Materials Conf., Notre Dame, IN, p. 80, June 2004.
  183. R. G. Meyers, P. Fay, J. N. Schulman, S. Thomas III, D. H. Chow, Y. K. Boegeman, and P. Deelman, "Sb-Based Heterostructure Backward Diodes with Improved Sensitivity," 2003 Device Research Conf., Salt Lake City, UT, pp. 93-94, 2003.
  184. P. Fay, J. N. Schulman, S. Thomas III, D. H. Chow, Y. K. Boegeman, and K. S. Holabird, “Performance and Modeling of Antimonide-Based Heterostructure Backward Diodes for Millimeter-Wave Detection,” Proc. IEEE Lester Eastman Conference on High Performance Devices, pp. 334-342, Newark, DE, 2002.
  185. J. H. Jang, G. Cueva, W. E. Hoke, R. Sankaralingam, P. Fay, and I. Adesida, “Monolithic Integration of In0.53Ga0.47As Photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on Metamorphic GaAs Substrates,” Proc. IEEE Gallium Arsenide Integrated Circuits Symposium, pp. 55-58, 2002.
  186. D. H. Chow, J. N. Schulman, P. Fay, J. Lu, Y. Xu, G. H. Bernstein, A. Gonzalez, P. Mazumder, E. T. Croke, H. L. Dunlap, K. S. Holabird, M. A. Morgan, and S. Weinreb, “Interband Tunneling Diodes for High Performance Electronics and Millimeter Wave Detection,” Third Workshop on the Fabrication, Characterization, and Applications of 6.1 Å III-V Semiconductors, Snowbird, UT, 2001.
  187. P. Fay, Y. Xu, J. Lu, G. H. Bernstein, A. Gonzalez, P. Mazumder, D. H. Chow, and J. N. Schulman, “A Flip-Flop Based on Monolithic Integration of InAs/AlSb/GaSb RITDs and InAlAs/InGaAs/InP HEMTs,” Proc. 59th Device Research Conference, pp. 47-48, June 2001.
  188. J. H. Jang, G. Cueva, I. Adesida, P. Fay, W. E. Hoke, and P. J. Lemonias, “Photoresponses of Metamorphic Double-Heterojunction Photodiodes Under High Power Optical Illumination,” Proc. IEEE Lasers and Electro-Optics Society Meeting, vol. 1, pp. 384-385, 2001.
  189. J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, P. Fay, W. E. Hoke, and P. J. Lemonias, “Metamorphic Double Heterojunction InGaAs/InGaAlAs/InAlAs Photodiodes on GaAs Substrate for 40 Gbit/s Long Wavelength Optical Fiber Communication,” Optical Fiber Conference 2001, paper number PD-6, Anaheim, CA, 2001. 
  190. P. Fay, B. Yang, and L. Potter, “Micromachining of Gallium Nitride and Related Materials for Microwave and Optoelectronic Applications,” presented at NSF Wireless Workshop, February 20-21, National Academy of Science, Washington DC, 2001.
  191. P. Fay, J. Lu, Y. Xu, G. H. Bernstein, D. H. Chow, J. N. Schulman, H. L. Dunlap, and H. J. De Los Santos, “Monolithic Integration of InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb Resonant Interband Tunneling Diodes (RITDs) for High Speed Integrated Circuits,” Proc. 58th Device Research Conference, pp. 161-162, June 2000.
  192. P. Fay, K. Stevens, J. Elliot, and N. Pan, "Gate Metallization Study for InGaP/InGaAs/GaAs PHEMTs," Proc. 1999 International Conf. on GaAs Manufacturing Technology, Vancouver, B.C., pp. 147-150, 1999.
  193. P. Fay, G. H. Bernstein, D. Chow, and P. Mazumder, "InAs/AlSb/GaSb Resonant Interband Tunneling Diodes and Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications," Proc. 1999 Great Lakes Symposium on VLSI, Ann Arbor, MI, pp. 162-165, 1999. 
  194. P. Fay, I. Adesida, C. Caneau, and S. Chandrasekhar, "High Sensitivity 12 Gb/s Monolithically Integrated PIN-HEMT Photoreceivers," Proc. 10th Intl. Conference on Indium Phosphide and Related Materials, Tsukuba, Ibaraki, Japan, paper WA4-3, 1998.
  195. P. Fay, W. Wohlmuth, C. Caneau, S. Chandrasekhar, and I. Adesida, "Digital Performance of High-Speed MSM-HEMT Monolithically Integrated Photoreceivers," Proc. 9th Intl. Conference on Indium Phosphide and Related Materials, Hyannis, MA, pp. 475-478, 1997.
  196. G. Cueva, A. Mahajan, P. Fay, M. Arafa, and I. Adesida, "Ring Oscillator Using InAlAs/InGaAs/InP Enhancement/Depletion-Mode High Electron Mobility Transistor Direct-Coupled FET Logic Inverters," Proc. 9th Intl. Conference on Indium Phosphide and Related Materials, Hyannis, MA, pp. 157-160, 1997.
  197. W. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, "High-Speed InGaAs-Based Vertical Schottky Barrier Photodetectors," Proc. 9th Intl. Conference on Indium Phosphide and Related Materials, Hyannis, MA, pp. 490-493, 1997.
  198. W. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, and I. Adesida, "Engineering Schottky Barrier Heights in InGaAs Metal-Semiconductor-Metal Photodetectors," SPIE Optoelectronics Symposium, San Jose, CA, 1997.
  199. A. Mahajan, M. Arafa, P. Fay, C. Caneau, and I. Adesida, "160 GHz Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor," 54th Annual Device Research Conf. Digest, Santa Barbara, CA, pp. 132-133, 1996.
  200. W. Wohlmuth, P. Fay, C. Caneau, and I. Adesida, "Low Dark Current InAlAs/InGaAs Metal-Semiconductor-Metal Photodetectors," Proc. Indium Phosphide and Related Materials Conf., Schwäbisch Gmünd, Germany, pp. 199-202, 1996.
  201. A. Mahajan, P. Fay, M. Arafa, G. Cueva, and I. Adesida, "Monolithic Integration of InAlAs/InGaAs/InP Enhancement- and Depletion-Mode High Electron Mobility Transistors," Tech. Digest, International Electron Devices Meeting, San Francisco, pp. 51-54, 1996.
  202. P. Fay, W. Wohlmuth, I. Adesida, and C. Caneau, "18-GHz Bandwidth Long-Wavelength MODFET and Metal-Semiconductor-Metal Photodetector-Based Integrated Photoreceiver," Optical Fiber Communications Conf. Tech. Digest, San Jose, CA, pp. 178-179, 1996.
  203. I. Adesida, P. Fay, W. Wohlmuth, and C. Caneau, "High Performance InAlAs/InGaAs/InP HEMT/MSM-Based OEIC Photoreceivers," Tech. Digest, International Electron Devices Meeting, Washington, D.C., pp. 579-582, 1995.
  204. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "A Wide Bandwidth Monolithic Long Wavelength MODFET/MSM Photoreceiver," presented at LEOS Summer Topical Meeting, Keystone, CO, 1995.
  205. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "A 15 GHz Bandwidth Lattice-Matched InAlAs/InGaAs/InP HEMT-Based OEIC Photoreceiver," 53rd Annual Device Research Conf. Digest, Charlottesville, VA, pp. 70-71, 1995.
  206. M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida, "High Performance Submicron-Gate SiGe P-Type Modulation-Doped Field Effect Transistors," 53rd Annual Device Research Conf., Charlottesville, VA, pp. 20-21, 1995.
  207. P. Fay, R. B. Brockenbrough, J. R. Tucker, J. W. Lyding, H. Hagendorn, T. Fayfield, and T. K. Higman, "STM-Patterned Modulated Gate Silicon MOSFET," presented at American Vacuum Society Meeting, Chicago, IL, 1992.

Books and Monographs

  1. D. Nirmal, J. Ajayan, and P. Fay, eds., Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, CRC Press, 2021.
  2. C. Youtsey, R. McCarthy, and P. Fay, “Epitaxial lift-off for III-nitride devices,” III-Nitride Electronic Devices, pp. 467-514, R. Chu and K. Shinohara eds., Semiconductors and Semimetals, vol. 102, Elsevier, Cambridge, MA, 2019.
  3. P. Fay, D. Jena, and P. Maki, eds., High-Frequency GaN Electronic Devices, Springer-Nature, 2019. Also contributed a chapter to this book: H. O. Condori Quispe, B. Sensale-Rodriguez, and P. Fay, “Plasma-Wave Propagation in GaN and Its Applications,” chapter 6, pp. 159-180.
  4. P. Fay, “Photodetectors,” Reference Module in Materials Science and Materials Engineering, S. Hashmi, ed., Elsevier, Oxford UK, pp. 1-16, 2016.
  5. P. Fay, “Introduction to Microwave and RF Engineering,” The RF and Microwave Handbook, 2nd. ed., J. Michael Golio, ed., CRC Press, Boca Raton, 2008. Variations of this chapter also appear in RF and Microwave Passive and Active Technologies, RF and Microwave Applications and Systems, and RF and Microwave Circuits, Measurements, and Modeling, Mike Golio, ed., CRC Press, Boca Raton, 2008.
  6. P. Fay, “High Speed Photodetectors and Photoreceivers,” High Speed Photonic Devices, Nadir Dagli, ed., Taylor and Francis, New York, 2006.
  7. G. H. Bernstein, L. O. Chua, A. I. Csurgay, P. Fay. Y. F. Huang, W. Porod, A. Rodriguez-Vasquez, B. Roska, T. Roska, F. Werblin, and A. Zarandy, “Biologically-Inspired Cellular Machine Architectures,” Managing Nano-Bio-Info-Cogno Innovations: Converging Technologies in Society, W. S. Bainbridge and M. C. Roco, eds., Springer, Doordrecht, 2006.
  8. P. Fay, “Introduction to Microwave and RF Systems Engineering,” Microwave and RF Product Applications, J. Michael Golio, ed., CRC Press, Boca Raton, 2003.
  9. J-. H. Jang, P. Fay, and I. Adesida, “Optoelectronic Receivers,” Encyclopedia of Optical Engineering, R. G. Driggers, ed., Marcel Dekker, New York, NY, 2002.
  10. P. Fay, “Photodetectors,” Encyclopedia of Materials: Science and Technology, S. Mahajan, ed., Elsevier Science, Oxford UK, 2001.
  11. P. Fay and I. Adesida, “Processing of Epitaxial Heterostructure Devices,” Volume 1: Heterostructures for High-Performance Devices, pp. 55-102, Maurice Francome and Colin E. C. Wood, eds., Handbook of Thin Film Devices: Frontiers of Research, Technology and Applications, Academic Press, 2000.
  12. P. Fay, “Introduction to Microwave and RF Engineering,” The RF and Microwave Handbook, J. Michael Golio, ed., CRC Press, Boca Raton, 2000.

Invited Technical Articles

  1. A. Orlov, P. Fay, G. Snider, X. Jehl, S. Barraud, and M. Sanquer, “Dual-port reflectometry technique: charge identification in nanoscaled single electron transistors,” IEEE Nano Magazine, vol. 9, no. 2, pp. 24-32, 2015.
  2. B. Hochwald, D. Love, Su Yan, P. Fay, and J. M. Jin, “Incorporating specific absorption rate constraints into wireless signal design,” IEEE Communications Magazine, vol. 52, no. 9, pp. 126-133, 2014.
  3. J. P. Allain, S. Bakhtiari, E. Baranoski, A. Bernstein, G. Boreman, J. Benizer, M. Carr, W. Chin, M. Clements, A. des Rosiers, T. Du Bosg, R. Dowla, P. Fay, N. Gopalsami, D. Kerner, R. Klann, R. Leach, Jr., T. Linnenbrink, B. Ludewigt, D. McMakin, D. Muh, D. Reyna, C. Seifert, S. Sheen, and K. Ziock, contributors; P. Bythrow, editor, “Through-Barrier Imaging Technologies Report,” National Consortium for MASINT Research, Defense Intelligence Agency, 2007.
  4. P. Fay, S. Chandrasekhar, and I. Adesida, "High-Speed Optoelectronic Receivers for Fiber-Optic Communications," IEEE Circuits and Devices, vol. 14, no. 5, pp. 16-25, 1998.