Heterostructure Electronic Devices

Research focuses on high-performance device technologies for ultra-broadband microwave, high-speed mixed-signal, ultrafast digital circuits, and wireless communications applications. Devices under active development include:

InGaP/GaAs, InP/GaAsSb, and InP/InGaAs HBTs AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs pHEMTs Integrated enhancement & depletion mode InAlAs/InGaAs/InP HEMTs InAs/AlSb/GaSb resonant interband tunnel diodes (RITDs) III-V based MOSFETs using native oxides of InAlP as the gate dielectric

Devices are designed and characterized in the High Speed Circuits and Devices lab, and we have a full fabrication facility available in the Notre Dame Nanofabrication Facility.

Recent highlights (selected):

• First report of enhancement-mode GaAs-channel MOSFETs using InAlP oxide as gate dielectric (X. Li et al., IEEE Electron Device Lett., vol. 25, 2004)
• Microwave performance of GaAs-channel MOSFETs competitive with GaAs-channel HEMTs at same gate length (Y. Cao et al., IEEE Electron Device Lett., vol. 27, 2006)
• Development of accurate microwave and DC model for InAs/AlSb/GaSb RITDs (Y. Xu et al., IEEE Trans. Electron Devices, vol. 51, 2004; P. Fay et al., IEEE Trans. Electron Devices, vol. 49, 2002)
• Characterization of InAs/AlSb/GaSb interband tunnel diodes for millimeter-wave detection (N. Su et al., IEEE Electron Device Lett., vol. 28, 2007; R. G. Meyers et al., IEEE Electron Device Lett., vol. 25, 2004)
• Development of low-noise self-aligned fabrication process for HBTs
• Investigation of gate barrier effects in InGaP/InGaAs pHEMTs (M. Ni et al., 2006 Compound Semiconductor Manufacturing Technology Digest; P. Fay et al., IEEE Electron Device Lett., vol. 21, 2000)