Integration Technology and MMICs
Research emphasis includes monolithic co-integration of high-performance electronic and optoelectronic device technologies, and the design, fabrication and testing of high-performance monolithic microwave integrated circuits (MMICs).
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Device technologies include:
- InGaP/GaAs, InP/GaAsSb, and InP/InGaAs HBTs
- AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs pHEMTs
- Integrated enhancement & depletion mode InAlAs/InGaAs/InP HEMTs
- InAs/AlSb/GaSb resonant interband tunnel diodes (RITDs)
- Optoelectronic devices, primarily photodetectors (MSM and PIN)
Circuit designs efforts include device model development & verification, circuit design and optimization, layout, fabrication, and full characterization.
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Circuits are designed and characterized in the High Speed Circuits and Devices lab, and we have a full fabrication facility available in the Notre Dame Nanofabrication Facility.
Recent highlights (selected):
- Integration of resonant interband tunnel diodes with InP-based HEMTs (P. Fay et al., IEEE Trans. Electron Devices, vol. 48, 2001)
- Digital inverting latch demonstrated in integrated RITD/HEMT technology (P. Fay et al., Electronics Lett., vol. 37, 2001)
- High-speed (> 17 GHz) comparator designed and fabricated in InP-based E/D HEMT technology for high-speed analog to digital conversion
- HBT-based low-noise X-band amplifiers designed and characterized
- Monolithic integration of MSM and PIN photodiodes with HEMTs for high-speed photoreceivers (P. Fay et al., IEEE Trans. Microwave Theory and Techniques, vol. 50, 2001)
