Photodetectors and Photoreceivers
Research focuses on high-performance detector and photoreceiver technologies for fast optical networking. Devices and technologies being investigated include:
|
|
|
|
 |
|
- MSM and PIN photodetectors
- Integrated PIN/HEMT and PIN/HBT structures for optoelectronic integrated circuits (OEICs)
- Novel photodetector structures for improved performance
- Metamorphic structures for long-wavelength applications
|
|
|
 |
|
|
|
|
|
|
Devices are designed and characterized in the High Speed Circuits and Devices lab, and we have a full fabrication facility available in the Notre Dame Nanofabrication Facility.
Recent highlights (selected):
- First report of drift-enhanced dual-depletion photodiodes for improved bandwidth-responsivity product (R. Sankaralingam, IEEE Photonics Technol. Lett., vol. 17, 2005)
- Development of 2 µm wavelength metamorphic photodiodes on InP
- Demonstration of ultrafast metamorphic PIN photodiodes (J. H. Jang et al., IEEE J. Lightwave Technology, vol. 20, 2002; J. H. Jang et al., IEEE Photonics Technol. Lett., vol. 15, 2003)
- Monolithically integrated high-speed MSM/HEMT and PIN/HEMT photoreceivers (P. Fay et al., IEEE Trans. Microwave Theory and Techniques, vol. 50, 2002)
