This research direction centers on device design, demonstration, and optimization for direct thermal-to-electrical energy conversion systems. Particular emphasis is on fabrication technology for multi-junction cell integration, and novel cell architectures for improved cell efficiency.

	Device structures based on low-bandgap III-V compound semiconductors (e.g. InGaAs, InAs/GaSb) are primary focus. Performance emphasis on: Fabrication technology for multi-junction cell integration Novel cell architectures for improved cell efficiency.

Devices are designed using the software tools available in the group, and fabricated using the Notre Dame Nanofabrication Facility. Characterization performed both in the High Speed Circuits and Devices lab, as well as through collaborations with NASA Glenn Research Center.

Recent highlights (selected):

• Characterization and analysis of transport and material properties for metamorphic TPV cells on InP (N. Su et al., J. Applied Physics, vol. 101, 2007)
• Demonstration of 0.6 eV dot-junction cell topology for TPV applications (S. Sinharoy et al., Proc. 31st IEEE Photovoltaics Specialists Conf., 2005)