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Etch Equipment

Description

Photoresist Stripping (ashing) has been widely used as a dry method for the removal of organic polymers (negative, positive, or Electron Beam photoresists) for the past fifteen years. The introduction of metal (aluminum) chambers was the only significant change until Drytek Mega Strip 5 was developed. Until the innovation of an advanced reactor design by Drytek, the other metal chamber systems were less efficient to the glass chamber reactors due to deactivation of active oxygen species caused by the metal reactor. The Drytek Mega Strip 5 utilizes an exclusive passivation method, which produces a greater number of active species. The Drytek Mega Strip 5 includes pressure control as a standard feature. A capacitance manometer head measures the pressure, and the electronic control module adjusts the throttle valve located in the main pumping line. The frequency, typically set around 50 kHz, has been adjusted to optimize the maximum power to the electrodes.

Allowed Materials

Si, Ge, C, GaAs and its compounds, InP and its compounds, cleaned SiO₂ (glass), and cleaned Al₂O₃ (sapphire).

Prohibited Materials

Indium, tin, zinc, iron, and organics.

Contact Information:

For additional information, please contact the NDNF Staff at pfay@nd.edu.

04.01.15

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