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The MOS Clean Bench and its Teflon contents are used exclusively for cleaning of metal oxide semiconductor structures. The hood contains four tanks, three of which are heated, and four quick dump rinse (QDR) tanks. The MOS Clean sequence consists of a 120°C Piranha Clean (H2SO4/H2O2), 70°C RAC#1 Caustic (NH4OH/H2O2/Dl) Clean, 70°C RCA#2 Acidic (HCl/H2O2/Dl) Clean, and an optional HF Dip (50:1, unbuffered 49% HF). Each tank has its own programmable timer and QDR for rinsing.

Strict protocol must be maintained to prevent contamination. Glove replacement and hood contents must be followed at ALL times.

Allowed Materials

Si wafers only.

Prohibited Materials

Anything other than Si wafers.

Cleaning procedure

Contact Information:

For additional information, please contact the NDNF Staff at pfay@nd.edu.


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