Facilities
Etch Equipment
- Oerlikon Inductive Coupled Plasma Reactive Ion Etcher (ICP-RIE) System
- Manufacturer:
Oerlikon - Operating Instructions
Description
The Oerlikon system is an inductive coupled plasma (ICP) reactor that is used for reactive ion etches. With the ICP, the etching system will be characterized with high plasma density, low process pressure, high etch rate, good etch uniformity, and low energy ion damage. A fiber optic/CCD end-point detector is attached to the reactor, which provides the capability to determine the end time of an etching process.
The Oerlikon plasma ICP etcher is configured for etching semiconductor films using chlorine-based chemistries. Presently, Cl2, BCl3, H2, CF4, CH4, SiCl4, O2, and Ar are installed on the tool. The tool is equipped with a vacuum load-lock.
Allowed Materials
Si, Ge, C, GaAs and its compounds, InP and its compounds, cleaned SiO2 (glass), and cleaned Al2O3 (sapphire).
Prohibited Materials
Indium, tin, zinc, iron, and organics
Contact Information:
For additional information, please contact the NDNF staff at pfay@nd.edu.
