Facilities

Etch Equipment

Description

Plasma-Therm's 790 Series systems are designed to provide plasma scientists with a flexible and cost effective platform for parallel plate processes including reactive ion etching, plasma etching, and plasma enhanced chemical vapor deposition. This 790 RIE system has been enhanced to include a vacuum load-lock, which allows the chamber to remain under vacuum at all times. The RIE is capable of processing two 4-inch wafers at a time. The system is currently configured with CHF3, CH4, O2, CF4, BCL3, Cl2, and Ar. Hydrogen (H2) gas is also connected and may be used. Please contact a member of the ND staff if you would like to use H2.

Allowed Materials

Si, Ge, C, GaAs and its compounds, InP and its compounds, cleaned SiO2 (glass), and cleaned Al2O3 (sapphire).

Prohibited Materials

Indium, tin, zinc, iron, and organics.

Contact Information:

For additional information, please contact the NDNF Staff at pfay@nd.edu.

03.13.15

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