Etch Equipment


Photoresist stripping (ashing) has been widely used as a dry method for the removal of organic polymers (negative, positive, or electron beam photoresists) for the past 15 years. The PS210 utilizes high-energy microwaves as its energy source for ion/radical formation. The PS210 is ideal for ashing, surface cleaning, and surface modification.

Allowed Materials

Si, Ge, C, GaAs and its compounds, InP and its compounds, cleaned SiO2 (glass), and cleaned Al2O3 (sapphire).

Prohibited Materials

Indium, tin, zinc, iron, and organics.

Contact Information:

For additional information, please contact the NDNF Staff at pfay@nd.edu.


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