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Etch Equipment

Description

Photoresist stripping (ashing) has been widely used as a dry method for the removal of organic polymers (negative, positive, or electron beam photoresists) for the past 15 years. The PS210 utilizes high-energy microwaves as its energy source for ion/radical formation. The PS210 is ideal for ashing, surface cleaning, and surface modification.

Allowed Materials

Si, Ge, C, GaAs and its compounds, InP and its compounds, cleaned SiO₂ (glass), and cleaned Al₂O₃ (sapphire).

Prohibited Materials

Indium, tin, zinc, iron, and organics.

Contact Information:

For additional information, please contact the NDNF Staff at pfay@nd.edu.

04.01.15

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